CN106062936B - 涂料组分、其制造方法及其用途 - Google Patents
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- 239000008199 coating composition Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000002904 solvent Substances 0.000 claims abstract description 132
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 71
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000002243 precursor Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 34
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 24
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 23
- -1 alkoxyl alcohol Chemical compound 0.000 claims description 20
- APUGIHICMSAKGR-UHFFFAOYSA-N [Y]=O Chemical compound [Y]=O APUGIHICMSAKGR-UHFFFAOYSA-N 0.000 claims description 19
- 150000004703 alkoxides Chemical class 0.000 claims description 19
- 235000019441 ethanol Nutrition 0.000 claims description 16
- 108700031620 S-acetylthiorphan Proteins 0.000 claims description 14
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 14
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 claims description 14
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 14
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 11
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 9
- 238000009835 boiling Methods 0.000 claims description 9
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical group CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 150000007942 carboxylates Chemical class 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 239000000243 solution Substances 0.000 description 21
- 229910003437 indium oxide Inorganic materials 0.000 description 18
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 18
- 238000000576 coating method Methods 0.000 description 14
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- 239000003381 stabilizer Substances 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
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- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
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- 238000003756 stirring Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 125000003545 alkoxy group Chemical group 0.000 description 4
- UQLDLKMNUJERMK-UHFFFAOYSA-L di(octadecanoyloxy)lead Chemical compound [Pb+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O UQLDLKMNUJERMK-UHFFFAOYSA-L 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 150000003746 yttrium Chemical class 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003949 trap density measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Abstract
Description
技术领域
本发明涉及一种可由至少一种含钇的前体制成的涂料组分,涉及一种用于制造所述涂料组分的方法,并且涉及所述涂料组分的用途。
背景技术
相比于许多其它技术、例如化学气相沉积(CVD),经由印刷和其它液体沉积工艺制造半导体电子元件层能够实现低得多的制造成本,原因在于在这种情况下,半导体可连续操作沉积。因此,已发展出例如用于制造薄膜晶体管(TFT)的液相工艺。在这方面尤其对基于含氧化铟的半导体层的薄膜晶体管很有利。然而,通过液相工艺制造的含氧化铟的半导体层具有下述缺点:呈现出不足的电气性能和不足的稳定性。特别地,环境影响与半导体层中的表面缺陷导致含氧化铟的层的电子特性随时间推移和/或在压力下缺乏一致性。因此,已开发出位于含氧化铟的层之上的稳定剂层,使得能够抵消表面缺陷和/或提供保护以免受环境影响。
现有技术描述了作为特别适用于氧化铟半导体层的稳定剂层的含氧化钇层(Nomura et al.,Applied Physics Letters 99,053505-1-053505-3(2011);Nomura etal.,Thin solid Films 520(2012)3378-3782;US 2012/0097957 A1)。然而其中所描述的含氧化钇层以高成本和复杂性通过例如CVD工艺、电子束蒸发和PLD(脉冲激光沉积)的工艺来制造。因此,期望能够通过成本更低的且更方便的方法来制造本质适用于使含氧化铟的层稳定的这些氧化钇层。
例如,US 2012/0104381 A1提供了一种具有“低陷阱密度材料层”的、基于金属氧化物的半导体元件的一般性披露,所述“低陷阱密度材料层”尤其可通过液相工艺或溶胶-凝胶工艺制造。然而,其中未描述用于制造含氧化钇层的液相工艺或溶胶-凝胶工艺。用于制造含氧化钇层的溶胶-凝胶工艺例如由Rudolph Rippstein在论文中进行了描述(1993)。因此,用于制造含氧化钇层的含水的工艺是现有技术的一部分。然而,其中所描述的钇前体的水凝胶溶液不产生使含氧化铟的层稳定至足够好的效果的稳定剂层。
发明内容
因此,本发明的一个目标是提供一种涂料组分,其尤其适于作为用于含氧化铟的层的稳定剂层。在这方面,尤其理想的目标是能够利用这些涂料组分来制造具有布置在半导体层之上的稳定剂层的晶体管,所述晶体管呈现非常低的导通电压并且在负偏压测试和正偏压测试(NBST和PBST)中导通电压还具有特别小的漂移。
该目的通过本发明的涂料组分来实现,所述涂料组分可由至少一种含钇的前体、溶剂A和与溶剂A不同的溶剂B制成,溶剂A的20℃下的蒸汽压力与溶剂B的20℃下的蒸汽压力之比:
涂料组分在此表示一种液体制剂,所述液体制剂适用于产生涂层、尤其适用于产生含钇的涂层。本发明的涂料组分优选为适用于印刷工艺、缝口模头工艺或旋涂工艺的涂料组分。在特别优选方案中,本发明的涂料组分适用于印刷工艺、即印刷墨。含钇的“前体”在此为一种可溶解的或可分散的、含钇的化合物,其可在相应的组分被印刷之后转变为含氧化钇的层、尤其为氧化钇层。“含钇的”前体在此为具有至少一个钇原子的前体。本发明的涂料组分还包括至少两种溶剂A和B。溶剂A和B选择成使得(与溶剂B相比更易挥发的)溶剂A的20℃下的蒸汽压力相对于(与溶剂A相比更难挥发的)溶剂B的20℃下的蒸汽压力之比大于或等于10。在该情况下,蒸汽压力利用对技术人员而言已知的静态确定法来确定。该方法在封闭系统中、在给定的温度下(在此为:20℃)测量在热力学平衡状态下在一种物质上方产生的蒸汽压力。在此优选地,溶剂A不仅比溶剂B更易挥发,而且与涂料组分中存在的所有溶剂相比具有最高的蒸汽压力。此外,优选地,溶剂B不仅比溶剂A更难挥发,而且与涂料组分中存在的所有溶剂相比具有最低的蒸汽压力。
确定溶液中存在的前体的结构是困难的。然而,假设溶液中存在的前体的架构与晶体中的架构相同。为此,假设本发明的制剂不仅可由至少一种含钇的前体和至少两种溶剂制成,而且还包括所述至少一种前体和所述至少两种溶剂。相应的说明同样地适用于下文所描述的所有优选实施例中的前体。
所述至少一种含钇的前体可仅具有作为(半)金属原子的钇。(半)金属表示金属和半金属。替代地,所述至少一种前体除了钇之外还可具有其他金属原子或半金属原子。然而优选地,用于制造涂料组分的所有前体都仅具有钇。
如果所述至少一种含钇的前体从包括钇醇盐(Yttrium-Alkoxiden)、钇氧联醇盐(Yttrium-Oxo-Alkoxiden)、钇烷氧基醇盐(Yttrium-Alkoxy-Alkoholaten)和钇盐的组中选择,那么可产生特别好的涂料组分。钇醇盐为具有至少一个钇原子和至少三个烷氧基的钇化合物。与钇醇盐相比,钇氧联醇盐还具有至少一个多桥氧原子,即它们至少包括两个钇原子、至少一个氧基和至少四个烷氧基。然而,由于氧基的桥接作用,钇氧联醇盐常为团簇化合物。此外,钇烷氧基醇盐为具有至少一个钇原子和至少一个氧-烷基-烷基-基(Oxyalkylalkylrest)(R-O-R’-O-基)的钇化合物。钇烷氧基醇盐可仅由钇原子和三个R-O-R’-O-基组成,或除了后者之外还可具有氧基和/或烷氧基。此外,优选的钇盐为硝酸钇和卤化钇。如果所述至少一种前体从钇氧联醇盐的组中选择,尤其从通式为YxOy(OR)z的钇氧联醇盐的组中选择,其中3≤x≤12,1≤y≤x,x≤z≤(3x-1)且y+z≥x,那么可获得特别好的效果。
最好的涂料组分如其前体一样,包括钇氧联醇盐Y5O(O-iPr)13。
本发明的涂料组分包括的所有含钇的前体优选地以基于制剂的总质量的0.1至10wt%的总比例使用。
此外,涂料组分也可利用自由钇(半)金属前体制造。其比例优选地不多于5wt%。然而,在特别优选方案中,涂料组分不利用自由钇前体制造。因此,在特别优选方案中,本发明的涂料组分仅以含钇的前体制造。
本发明的涂料组分具有至少两种溶剂。本发明的涂料组分优选为无水的,因为这样能够获得特别均匀且薄的层。无水的涂料组分在此表示不包括作为溶剂的水的涂料组分。因此,相应的涂料组分为不在溶胶-凝胶工艺中使用的组分。在另外的优选方案中,涂料组分的含水量(例如由于从空气中吸收水而产生)不多于500ppm。
溶剂A和溶剂B优选地从乙醇、烷氧基醇、羟基醚和羧酸酯以及乳酸酯的组中选择。
如果不仅这两种溶剂的蒸汽压力比为10或10以上,而且在SATP条件下这两种溶剂A和B的沸点之差≥30℃,那么可获得特别好的结果。“SATP条件”在此表示105Pa的压力和25℃的温度。
在另外的优选方案中,溶剂A在SATP条件下的沸点为50至140℃。
进一步优选的溶剂A从包括1-甲氧基-2-丙醇、2-甲氧乙醇、乙酸丁酯、异丙醇、叔丁醇和乙醇的组中选择。
非常优选地,溶剂A为乙醇。
在另外的优选方案中,溶剂B在SATP条件下的沸点为100至200℃。
在另外的优选方案中,溶剂B从包括1-己醇、环己醇、四氢糠醇、1-甲氧基-2-乙酸丙酯和乳酸乙酯的组中选择。
非常优选地,溶剂B为1-己醇或四氢糠醇,尤其优选为四氢糠醇。
在另外的优选方案中,基于形成的溶剂的总体积,溶剂A的比例为75至99vol%,溶剂B的比例为1至25vol%。
除了溶剂A和B之外,涂料组分可包括与溶剂A和B不同的另外的溶剂。涂料组分也可仅具有溶剂A和B,因此可仅具有两种溶剂。涂料组分优选地可由至少一种含钇的前体、溶剂A、与溶剂A不同的溶剂B以及与溶剂A和溶剂B不同的另外的第三溶剂C制成,其中,溶剂A的蒸汽压力与溶剂B的蒸汽压力之比:
第三溶剂C优选地从包括1-甲氧基-2-丙醇和环己醇的组中选择。
由至少一种含钇的前体、溶剂A、溶剂B和溶剂C制成的涂料组分是特别优选的。因此,更优选地,本发明的涂料组分仅具有三种溶剂。
非常优选地,溶剂A为乙醇,溶剂B为1-己醇或四氢糠醇,溶剂C为1-甲氧基-2-丙醇或环己醇。
本发明的涂料组分可附加地具有一种或一种以上的添加剂,以实现期望的特性。在涂料组分包括添加剂的情况下,这些添加剂优选地基于涂料组分的总质量以小于2wt%存在。然而,在另外的优选方案中,本发明的涂料组分不具有添加剂。
本发明还提供一种用于制造根据本发明的涂料组分的方法,其中,至少一种含钇的前体、溶剂A、与溶剂A不同的溶剂B、可选的另外的溶剂和添加剂相互混合,溶剂A的20℃下的蒸汽压力与溶剂B的20℃下的蒸汽压力之比:
含钇的“前体”在此为一种可溶解的或可分散的、含钇的化合物,其可在相应的组分被印刷之后转变为含氧化钇的层。此外,“含钇的”前体表示具有至少一个钇原子的前体。本发明的方法还利用至少两种溶剂A和B。溶剂A和B选择成使得(与溶剂B相比更易挥发的)溶剂A的蒸汽压力相对于(与溶剂A相比更难挥发的)溶剂B的蒸汽压力之比大于或等于10。在这种情况下,蒸汽压力利用对技术人员而言已知的静态确定法来确定。该方法在封闭系统中、给定的温度下(在此为:20℃)测量在热力学平衡状态下在一种物质上方产生的蒸汽压力。在此优选地,溶剂A不仅比溶剂B更易挥发,而且与涂料组分中存在的所有溶剂相比具有最高的蒸汽压力。此外,优选地,溶剂B不仅比溶剂A更难挥发,而且与涂料组分中存在的所有溶剂相比具有最低的蒸汽压力。
所述至少一种含钇的前体可仅具有作为(半)金属原子的钇。(半)金属表示金属和半金属。替代地,所述至少一种前体除了钇之外还可具有其他金属原子或半金属原子。然而优选地,本方法中所用的所有前体仅具有钇。
如果所述至少一种含钇的前体从包括钇醇盐、钇氧联醇盐、钇烷氧基醇盐和钇盐的组中选择,那么可产生特别好的涂料组分。钇醇盐为具有至少一个钇原子和至少三个烷氧基的钇化合物。与钇醇盐相比,钇氧联醇盐还具有至少一个多桥氧原子,即它们至少包括两个钇原子、至少一个氧基和至少四个烷氧基。然而,由于氧基的桥接作用,钇氧联醇盐常为团簇化合物。此外,钇烷氧基醇盐为具有至少一个钇原子和至少一个氧-烷基-烷基-基(R-O-R’-O-基)的钇化合物。钇烷氧基醇盐可仅由钇原子和三个R-O-R’-O-基组成,或者除了后者之外还可具有氧基和/或烷氧基。此外,优选的钇盐为硝酸钇和卤化钇。如果所述至少一种前体从钇氧联醇盐的组中选择,尤其从通式为YxOy(OR)z,其中3≤x≤12,1≤y≤x,x≤z≤(3x–1)且y+z≥x的钇氧联醇盐的组中选择,那么可获得特别好的结果。
当前体为钇氧联醇盐Y5O(O-iPr)13时,获得最佳涂料组分、本发明的方法优选地基于制剂的总质量以0.1wt%至10wt%的总比例利用所有的含钇的前体。
在本发明的方法中,也可采用自由钇(半)金属前体。其比例优选地不多于5wt%。然而,在特别优选方案中,本方法不利用自由钇前体实施。因此,在特别优选方案中,本发明的涂料组分仅以含钇的前体制造。
本发明的方法还利用至少两种溶剂。本发明的方法优选为无水的,因为这样能够获得适合的无水的涂料组分以用于形成特别均匀且薄的层。无水的涂料组分在此表示不包括作为溶剂的水的涂料组分。因此,相应的涂料组分为不在溶胶-凝胶工艺中使用的组分。在另外的优选方案中,本方法中所实施的且因此也即涂料组分中的含水量(例如由于从空气中吸收水而产生)不多于500ppm。
溶剂A和溶剂B优选地从乙醇、烷氧基醇、羟基醚和羧酸酯以及乳酸酯的组中选择。
如果不仅这两种溶剂的蒸汽压力比为10或10以上,而且在SATP条件下这两种溶剂A和B的沸点之差≥30℃,那么可获得特别好的结果。“SATP条件”在此表示105Pa的压力和25℃的温度。
在另外的优选方案中,溶剂A在SATP条件下的沸点为50至140℃。
进一步优选的溶剂A是从包括1-甲氧基-2-丙醇,2-甲氧乙醇,乙酸丁酯,异丙醇,叔丁醇和乙醇的组中选择的。
非常优选地,溶剂A为乙醇。
在另外的优选方案中,溶剂B在SATP条件下的沸点为100至200℃。
在另外的优选方案中,溶剂B从包括1-己醇、环己醇、四氢糠醇、1-甲氧基-2-乙酸丙酯和乳酸乙酯的组中选择。
非常优选地,溶剂B为1-己醇或四氢糠醇,尤其优选为四氢糠醇。
在另外的优选方案中,基于形成的溶剂的总体积,溶剂A的比例为75至99vol%,溶剂B的比例为1至25vol%。
在本发明的方法中,除了溶剂A和B之外,可使用与溶剂A和B不同的另外的溶剂。因此,本发明可仅采用溶剂A和B,也即仅两种溶剂。然而在本发明的方法中,优选方案为:至少一种含钇的前体、溶剂A、与溶剂A不同的溶剂B以及与溶剂A和溶剂B不同的至少一种第三溶剂C相互混合,其中,溶剂A的20℃下的蒸汽压力与溶剂B的20℃下的蒸汽压力之比:
第三溶剂C优选地从包括1-甲氧基-2-丙醇和环己醇的组中选择。
使用至少一种含钇的前体、溶剂A、溶剂B和溶剂C的方法是特别优选的。因此,在本发明的方法中,在特别优选方案中,至少一种含钇的前体和恰好三种溶剂相互混合。
非常优选地,溶剂A为乙醇,溶剂B为1-己醇或四氢糠醇,溶剂C为1-甲氧基-2-丙醇或环己醇。
此外,在本发明方法中,为了使产生的涂料组分实现期望的特性,可添加一种或一种以上的添加剂。在本方法设想对添加剂的使用的情况下,这些添加剂优选地基于所用的组分的总质量以小于2wt%使用。然而,在另外的优选方案中,本发明的方法不设想任何添加剂。
本发明还提供本发明的涂料组分用于形成含氧化钇的层的用途。本发明的涂料组分用于形成位于半导体层上的、尤其含氧化铟的层上的稳定剂层的用途是特别优选的。
因此,本发明还提供由本发明的涂料组分形成的稳定剂层。如果本发明的稳定剂层为1nm至20nm厚,那么通过本发明的稳定剂层实现了特别好的特性。
下述实施例用于说明本发明的主题,其本身不具有任何限制作用。
具体实施方式
实施例1:
一种溶液由25mg的钇氧联醇盐[Y5O(O-iPr)13]在1ml的四氢糠醇中通过搅拌形成。所述溶液以体积比1:3用乙醇稀释。所述溶液通过旋涂施涂至含氧化铟的层。含氧化铟的层上的含钇的涂料通过热进行转变。
实施例2:
一种溶液由25mg的钇氧联醇盐[Y5O(O-iPr)13]在1ml的1-甲氧基-2-丙醇中通过搅拌形成。所述溶液以2份1-甲氧基-2-丙醇、1份乙醇和0.2份四氢糠醇稀释。所述溶液通过旋涂施涂至含氧化铟的层。含氧化铟的层上的含钇的涂料通过热进行转变。
实施例3:
一种溶液由25mg的钇氧联醇盐[Y5O(O-iPr)13]在1ml的四氢糠醇中通过搅拌形成。所述溶液以1.33份环己醇和1.67份叔丁醇稀释。所述溶液通过旋涂施涂至含氧化铟的层。含氧化铟的层上的含钇的涂料通过热进行转变。
比较例1:
一种溶液由25mg的钇氧联醇盐[Y5O(O-iPr)13]在1ml的四氢糠醇中通过搅拌形成。所述溶液以1:3的体积比用四氢糠醇稀释。所述溶液通过旋涂施涂至含氧化铟的层。含氧化铟的层上的含钇的涂料通过热进行转变。
比较例2:
一种溶液由25mg的钇氧联醇盐[Y5O(O-iPr)13]在1ml的1-甲氧基-2-丙醇中通过搅拌形成。所述溶液以1:3的体积比用1-甲氧基-2-丙醇稀释。所述溶液通过旋涂施涂至含氧化铟的层。含氧化铟的层上的含钇的涂料通过热进行转变。
比较例3:
一种溶液由25mg的钇氧联醇盐[Y5O(O-iPr)13]在1ml的1-甲氧基-2-丙醇通过搅拌形成。所述溶液以1:3的体积比用乙醇稀释。所述溶液通过旋涂施涂至含氧化铟的层。含氧化铟的层上的含钇的涂料通过热进行转变。
下述为适于所有实施例的情况:通过持续60秒的、2000rpm的、100μl的旋涂实施层的形成过程。所涂覆的基体为具有230nm SiO2层和由ITO制成的预模式化的源接触部和漏接触部的硅晶片(1.5×1.5cm2)。这些晶片已预先以100μl的含铟醇盐的涂料组分通过持续30秒的、2000rpm的旋涂涂覆,该层已通过热转变成含氧化铟的层。两个层的热转变都在加热板上进行。
利用Keithley 2612系统源表和Keithley 3706-NFP系统开关/万用表执行电学测试。在RT下、在N2大气压下测量样品。测试随着温度处理进行。(预模式化的)栅接触部、源接触部和漏接触部连接至装置(钨测量技巧)。在栅极与源极之间遍历电压特征曲线(-20至+30V),记录源极与漏极之间流动的电流。该数据可用于计算迁移率的值。用于计算的公式如下:
其中,ID和VG分别为漏极与源极之间的电流和施加在栅极处的电压。L和W对应于沟道的长度和宽度,Ci为电介质的介电常数。迁移率的值越高,材料越好。
此外,特征特性为接通电压(VOn),其描述了源极与漏极之间的电流开始的点;该值应非常接近0V。
在负偏压测试或正偏压测试(NBST或PBST)之前和之后的测量之间出现的接通电压的漂移也是有关的。在该情况下,在持续2000秒记录初始特征线之后,施加-20V(NBST)或+20V(PBST)的栅电压(VG)。在这两种情况下,施加+5V的漏电压(VD)。在该时间之后,记录另外的特征线,并确定接通电压相对于初始特征线的漂移。该值应尽可能地低。在评估中,重要的是应注意:对于可行的应用,接通电压和在NBST或PBST之后的漂移都应尽可能地接近零。
Claims (13)
1.一种涂料组分,所述涂料组分能够由从钇氧联醇盐的组中选择的至少一种含钇的前体、溶剂A和与溶剂A不同的溶剂B制成,溶剂A的20℃下的蒸汽压力相对于溶剂B的20℃下的蒸汽压力之比:
其中,所述涂料组分不包括作为溶剂的水。
2.如权利要求1所述的涂料组分,其特征在于,所述至少一种前体为Y5O(O-iPr)13。
3.如权利要求1或2所述的涂料组分,其特征在于,使用的所有的含钇的前体基于制剂的总质量的比例为0.1至10wt%。
4.如权利要求1或2所述的涂料组分,其特征在于,溶剂A和溶剂B从乙醇、烷氧基醇、羟基醚、羧酸酯和乳酸酯的组中选择。
5.如权利要求1或2所述的涂料组分,其特征在于,两种溶剂A和B在SATP条件下的沸点之差≥30℃,SATP条件指的是105Pa的压力和25℃的温度。
6.如权利要求1或2所述的涂料组分,其特征在于,溶剂A在SATP条件下的沸点为50至140℃,SATP条件指的是105Pa的压力和25℃的温度。
7.如权利要求6所述的涂料组分,其特征在于,溶剂A从包括1-甲氧基-2-丙醇、2-甲氧乙醇、乙酸丁酯、异丙醇、叔丁醇和乙醇的组中选择。
8.如权利要求1-2、7中任一项所述的涂料组分,其特征在于,溶剂B在SATP条件下的沸点为100至200℃,SATP条件指的是105Pa的压力和25℃的温度。
9.如权利要求1-2、7中任一项所述的涂料组分,其特征在于,溶剂B从包括1-己醇、环己醇、四氢糠醇、1-甲氧基-2-乙酸丙酯和乳酸乙酯的组中选择。
10.如权利要求1-2、7中任一项所述的涂料组分,其特征在于,基于形成的溶剂的总体积,溶剂A的比例为75至99vol%,溶剂B的比例为1至25vol%。
11.如权利要求1-2、7中任一项所述的涂料组分,其特征在于,除了A和B,所述涂料组分还包括另外的溶剂。
12.一种用于制造根据前述权利要求中任一项所述的涂料组分的方法,其中,至少一种含钇的前体、溶剂A、与溶剂A不同的溶剂B、和可选的另外的溶剂或添加剂相互混合,溶剂A的20℃下的蒸汽压力与溶剂B的20℃下的蒸汽压力之比:
13.一种根据权利要求1至11中任一项所述的涂料组分的用途,所述用途为用于形成含氧化钇的层。
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