JP6438137B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP6438137B2 JP6438137B2 JP2017528265A JP2017528265A JP6438137B2 JP 6438137 B2 JP6438137 B2 JP 6438137B2 JP 2017528265 A JP2017528265 A JP 2017528265A JP 2017528265 A JP2017528265 A JP 2017528265A JP 6438137 B2 JP6438137 B2 JP 6438137B2
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- 239000004065 semiconductor Substances 0.000 title claims description 428
- 239000000758 substrate Substances 0.000 claims description 323
- 239000004020 conductor Substances 0.000 claims description 230
- 230000008054 signal transmission Effects 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 38
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000001939 inductive effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004804 winding Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 241000724291 Tobacco streak virus Species 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009351 contact transmission Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
以下、本発明の実施形態について、図面を参照しながら説明する。図1は、本発明の第1実施形態の半導体素子を説明するための図であり、(A)は斜視図、(B)は半導体素子のA−A断面図である。図2は、素子側面から見た(B方向から見た)信号送受信コイルの斜視図である。
外部基板200は、外部基板信号送受信端子210を有する。
半導体素子10は、素子第1主面11と、素子第1主面11と反対の面である素子第2主面12と、素子側面13と有し、半導体基板部(半導体基板20)と絶縁層部(絶縁層30)とで構成された半導体素子であって、素子第1主面11に設けられ、半導体素子10の外部にある外部基板200に設けられた外部基板信号送受信端子210との間で、接触して信号の送受信が可能である信号送受信端子14と、素子側面13に設けられ、半導体素子10の外部にある外部半導体素子100に設けられた外部半導体素子信号送受信コイル120との間で、素子側面13を介して、非接触に信号の送信又は受信が可能である信号送受信コイル15と、を備え、信号送受信コイル15は、絶縁層30の内部に形成された導体(コイル形成用導体15B)と、半導体基板20の内部に形成された導体(コイル形成用貫通導体15C)と、を有している。
次に、第2実施形態について、図4及び図5を参照しながら説明する。図4は、第2実施形態の半導体素子の断面図である。図4は、図1(B)に対応する図である。図5は、第2実施形態の半導体素子の素子側面から見た(B方向から見た)信号送受信コイルの斜視図である。第2実施形態については、主として、第1実施形態と異なる点を中心に説明し、第1実施形態と同様な構成については、説明を省略する。特に説明しない点は、第1実施形態についての説明が適宜適用される。
半導体素子10Aは、素子第1主面11と、素子第1主面11と反対の面である素子第2主面12と、素子側面13と有し、半導体基板部(第1半導体基板20−1〜第3半導体基板20−3)と絶縁層部(第1絶縁層30−1〜第3絶縁層30−3)とで構成された半導体素子であって、素子第1主面11に設けられ、半導体素子10の外部にある外部基板200に設けられた外部基板信号送受信端子210との間で、接触して信号の送受信が可能である信号送受信端子14と、素子側面13に設けられ、半導体素子10の外部にある外部半導体素子100に設けられた外部半導体素子信号送受信コイル120との間で、素子側面13を介して、非接触に信号の送信又は受信が可能である信号送受信コイル15と、を備え、信号送受信コイル15は、絶縁層30の内部に形成された導体(コイル形成用導体15B、コイル形成用ブリッジ導体15D)と、半導体基板20の内部に形成された導体(コイル形成用貫通導体15C)と、を有している。
また、信号送受信コイル15のサイズは、7×10μm2に限定されず、適宜調整され得る。また、信号送受信コイル15の間隔は、15μmに限定されず、適宜調整され得る。
10、10A 半導体素子
11 素子第1主面
12 素子第2主面
13 素子側面
14 信号送受信端子
14A 導電性部材
15 信号送受信コイル(信号送受信部)
15A 半導体基板上導体
15B 1対のコイル形成用導体
15B1 コイル形成用導体接続導体
15C コイル形成用貫通導体
15C1 コイル形成用貫通孔
15C2 導電材料
15D コイル形成用ブリッジ導体
20 半導体基板(半導体基板部)
20−1 第1半導体基板(半導体基板部)
20−2 第2半導体基板(半導体基板部)
20−3 第3半導体基板(半導体基板部)
21 半導体基板第1主面
22 半導体基板第2主面
23 半導体基板側面
30 絶縁層(絶縁層部)
30−1 第1絶縁層(絶縁層部、第1主面側絶縁層)
30−2 第2絶縁層(絶縁層部、第2主面側絶縁層)
30−3 第3絶縁層(絶縁層部)
31 絶縁層主面
32 絶縁層側面
100 外部半導体素子
110 外部半導体素子信号送受信端子
120 外部半導体素子信号送受信コイル(外部半導体素子信号送受信部)
200 外部基板
210 外部基板信号送受信端子
R らせん軸
Claims (5)
- 素子第1主面と、前記素子第1主面と反対の面である素子第2主面と、素子側面と有し、半導体基板部と絶縁層部とで構成された半導体素子であって、
前記素子第1主面に設けられ、前記半導体素子の外部にある外部基板に設けられた外部基板信号送受信端子との間で、接触して信号の送受信が可能である信号送受信端子と、
前記素子側面に設けられ、前記半導体素子の外部にある外部半導体素子に設けられた外部半導体素子信号送受信部との間で、前記素子側面を介して、非接触に信号の送受信が可能である信号送受信コイルと、を備え、
前記信号送受信コイルは、前記絶縁層部の内部に形成された導体と、前記半導体基板部の内部に形成された導体と、
を有し、
前記半導体基板部は、半導体基板第1主面と、前記半導体基板第1主面の反対の面である半導体基板第2主面と、半導体基板側面と、を有する複数の半導体基板であり、
前記絶縁層部は、前記複数の半導体基板の半導体基板第1主面にそれぞれ配置されており、前記半導体基板第1主面と反対の面である絶縁層主面と、絶縁層側面と、を有する複数の絶縁層であり、
前記複数の半導体基板と前記複数の絶縁層とは交互に配置されており、
前記素子第1主面は前記複数の絶縁層のうちの最も前記素子第1主面側の1つが有する前記絶縁層主面であり、前記素子第2主面は、前記複数の半導体基板のうちの最も前記素子第2主面側の1つが有する前記半導体基板第2主面であり、前記素子側面は前記複数の半導体基板の前記半導体基板側面及び前記複数の絶縁層の前記絶縁層側面によって形成される面であり、
前記信号送受信コイルは、前記複数の絶縁層のうちの1つである第1主面側絶縁層の内部に形成された1対のコイル形成用導体と、前記複数の絶縁層のうちの1つであって、前記第1主面側絶縁層よりも前記素子第2主面側に配置された第2主面側絶縁層の内部に形成されたコイル形成用ブリッジ導体と、前記1対のコイル形成用導体と前記コイル形成用ブリッジ導体とを接続する1対のコイル形成用貫通導体と、を有する半導体素子。 - 素子第1主面と、前記素子第1主面と反対の面である素子第2主面と、素子側面と有し、半導体基板部と絶縁層部とで構成された半導体素子であって、
前記素子第1主面に設けられ、前記半導体素子の外部にある外部基板に設けられた外部基板信号送受信端子との間で、接触して信号の送受信が可能である信号送受信端子と、
前記素子側面に設けられ、前記半導体素子の外部にある外部半導体素子に設けられた外部半導体素子信号送受信部との間で、前記素子側面を介して、非接触に信号の送受信が可能である信号送受信コイルと、を備え、
前記信号送受信コイルは、前記絶縁層部の内部に形成された導体と、前記半導体基板部の内部に形成された導体と、
を有し、
前記半導体基板部は、半導体基板第1主面と、前記半導体基板第1主面の反対の面である半導体基板第2主面と、半導体基板側面と、を有する複数の半導体基板であり、
前記絶縁層部は、前記複数の半導体基板の半導体基板第1主面にそれぞれ配置されており、前記半導体基板第1主面と反対の面である絶縁層主面と、絶縁層側面と、を有する複数の絶縁層であり、
前記複数の半導体基板と前記複数の絶縁層とは交互に配置されており、
前記素子第1主面は前記複数の絶縁層のうちの最も前記素子第1主面側の1つが有する前記絶縁層主面であり、前記素子第2主面は、前記複数の半導体基板のうちの最も前記素子第2主面側の1つが有する前記半導体基板第2主面であり、前記素子側面は前記複数の半導体基板の前記半導体基板側面及び前記複数の絶縁層の前記絶縁層側面によって形成される面であり、
前記信号送受信コイルは、前記複数の絶縁層のうちの1つの絶縁層の内部に形成された1対のコイル形成用導体と、前記素子第2主面に配置されたコイル形成用ブリッジ導体と、前記1対のコイル形成用導体と前記コイル形成用ブリッジ導体とを接続する1対のコイル形成用貫通導体と、を有する半導体素子。 - 前記信号送受信コイルは、ソレノイドコイルであり、前記ソレノイドコイルのらせん軸は、前記素子側面を貫く方向に延びる軸である請求項1又は2に記載の半導体素子。
- 請求項1に記載の半導体素子の製造方法であって、
複数の前記半導体基板のそれぞれに絶縁層を積層することによって、絶縁層が形成された前記複数の半導体基板を形成する絶縁層積層工程であって、前記第1主面側絶縁層の内部に前記1対のコイル形成用導体を形成する工程と、前記第2主面側絶縁層の内部に他の導電体と接続されない前記コイル形成用ブリッジ導体を形成する工程と、を含む絶縁層積層工程と、
絶縁層が積層された前記複数の半導体基板を接合することによって、前記複数の半導体基板と前記複数の絶縁層とを交互に配置する工程と、
前記素子第1主面から貫通孔を形成する貫通孔形成工程であって、前記コイル形成用ブリッジ導体及び前記1対のコイル形成用導体が露出するように貫通孔を形成する貫通孔形成工程と、
前記貫通孔に導電材料を配置することによって、前記コイル形成用ブリッジ導体及び前記1対のコイル形成用導体に接続される前記1対のコイル形成用貫通導体を形成する貫通導体形成工程と、を備えた請求項1に記載の半導体素子の製造方法。 - 請求項2に記載の半導体素子の製造方法であって、
複数の前記半導体基板のそれぞれに絶縁層を積層することによって、絶縁層が形成された前記複数の半導体基板を形成する絶縁層積層工程であって、前記1つの絶縁層の内部に前記コイル形成用導体を形成する工程を含む絶縁層積層工程と、
絶縁層が積層された前記複数の半導体基板を接合することによって、前記複数の半導体基板と前記複数の絶縁層とを交互に配置する工程と、
前記素子第2主面から貫通孔を形成する貫通孔形成工程であって、前記1対のコイル形成用導体が露出するように貫通孔を形成する貫通孔形成工程と、
前記貫通孔に導電材料を配置することによって、前記1対のコイル形成用貫通導体を形成する貫通導体形成工程と、
前記1対のコイル形成用貫通導体を接続する前記コイル形成用ブリッジ導体を前記半導体基板第2主面に形成する工程と、を備えた請求項2に記載の半導体素子の製造方法。
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