JP6431557B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 74
- 238000003672 processing method Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims description 166
- 150000002500 ions Chemical class 0.000 claims description 85
- 238000005530 etching Methods 0.000 claims description 57
- 230000008569 process Effects 0.000 claims description 55
- 238000001020 plasma etching Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 230000001965 increasing effect Effects 0.000 claims description 15
- 230000000903 blocking effect Effects 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 238000002474 experimental method Methods 0.000 description 33
- 239000010408 film Substances 0.000 description 33
- 238000009826 distribution Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Description
[プラズマ処理装置の構成]
[実施形態における上部AC印加方式の基本的作用]
fpi=(e2no/ε0mi)1/2/2π ・・・・(1)
ただし、eは電子の電荷量、noはプラズマ密度、ε0は真空中の誘電率、miはイオンの質量である。
[HARCプロセスに関する実施例]
レジスト : アクリレートベース用のArFレジスト
処理ガス: C4F6/C4F8/Ar/O2=20/35/500/36sccm
チャンバ内の圧力 : 20mTorr
温度 : 上部電極/チャンバ側壁/下部電極=60/60/40℃
高周波電力 : 40MHz/13MHz=1000/4500W
交流周波数 : AC=380kHz
交流電力: AC=0W,250W,500W,1000W
直流電圧: Vdc=0V,−150V,−300V,−450V,−600V
[BEOLプロセスに関する実施例]
処理ガス: C4F8/Ar/N2/O2=30/1200/70/17sccm
チャンバ内の圧力 : 80mTorr
温度 : 上部電極/チャンバ側壁/下部電極=60/60/60℃
交流周波数 : AC=380kHz
交流電力: AC=0W,250W,500W
直流電圧: Vdc=0V,−300V,−700V
[その他の実施例]
処理ガス: H2/Ar=100/800sccm
チャンバ内の圧力 : 50mTorr
温度 : 上部電極/チャンバ側壁/下部電極=60/60/30℃
高周波電力 : 40MHz/13MHz=300/0W
交流周波数 : AC=380kHz
交流電力: AC=0W,250W,500W
直流電圧: Vdc=0V,−300V,−700V
処理時間 : 30秒
16 サセプタ(下部電極)
30 (プラズマ生成用の)高周波電源
32 (イオン引き込み用の)高周波電源
46 上部電極
58 処理ガス
64 交流電源
68 ブロッキングコンデンサ
82 制御部
Claims (8)
- 真空排気可能な処理容器と、
前記処理容器内に配置され、被処理基板を載せて支持する第1の電極と、
前記処理容器内に前記第1の電極と所定の間隔を空けて平行に配置される第2の電極と、
前記処理容器内の前記第1および第2の電極間の処理空間に所望の処理ガスを供給する処理ガス供給部と、
前記処理ガスを放電させてプラズマを生成するのに適した周波数を有する第1の高周波を前記第1の電極に印加する第1の高周波電源と、
プラズマ中のイオンが追従できる周波数を有する低周波または高周波の交流を前記第2の電極に印加する交流電源と、
前記交流電源と前記第2の電極との間に接続されるブロッキング用のコンデンサと、
制御部と
を有し、
前記制御部は、前記第2の電極の電圧が、負極性の直流の自己バイアス電圧と前記周波数のサイクルで周期的に変化する前記交流の電圧とが重畳したものとなり、前記交流の電圧が負極性になる前記周波数の半サイクルでは、前記第2の電極の電位が前記自己バイアス電圧よりも低くなって、前記第2の電極に入射するイオンのエネルギーが引き上げられ、前記交流の電圧が正極性になる前記周波数の半サイクルでは、前記第2の電極の電位が前記自己バイアス電圧よりも高くなって、前記処理容器の側壁付近のプラズマのポテンシャルが引き上げられるように、前記交流電源より出力される前記交流の電力を100W以上で制御し、
前記交流の電圧が負極性になる前記周波数の半サイクルと、前記交流の電圧が正極性になる前記周波数の半サイクルとを繰り返すことによって、前記交流電源より前記交流が出力されている間、前記第2の電極に入射するイオンのエネルギーが引き上げられることと、前記処理容器の側壁付近のプラズマのポテンシャルが引き上げられることが繰り返される、
ことを特徴とするプラズマ処理装置。 - 前記交流の周波数は、前記イオンのイオンプラズマ周波数よりも低い、請求項1に記載のプラズマ処理装置。
- イオンの引き込みに適した周波数を有する第2の高周波を前記第1の電極に印加する第2の高周波電源を更に備える、請求項1または請求項2に記載のプラズマ処理装置。
- 前記第1の高周波の周波数は40MHz以上であり、前記第2の高周波の周波数は13MHz以下で前記イオンのイオンプラズマ周波数よりも高い、請求項3に記載のプラズマ処理装置。
- 被処理基板上のシリコン酸化膜に高アスペクト比の孔を形成するプラズマエッチング方法であって、
室内に第1の電極と第2の電極とを所定の間隔を空けて平行に配置している真空可能な処理容器内で前記第1の電極の上に被処理基板を載せて支持する第1の工程と、
前記処理容器内を所定の圧力に真空排気する第2の工程と、
前記第1の電極と前記第2の電極との間の処理空間にフルオロカーボン系のエッチングガスを供給し、前記第1の電極に第1の高周波を印加して前記処理空間で前記エッチングガスのプラズマを生成する第3の工程と、
プラズマ中のイオンが追従できる周波数を有する低周波または高周波の交流をブロッキング用のコンデンサを介して前記第2の電極に印加する第4の工程と
を有し、
前記第4の工程は、
前記第2の電極の電圧が、負極性の直流の自己バイアス電圧と前記周波数のサイクルで周期的に変化する前記交流の電圧とが重畳したものとなり、前記交流の電圧が負極性になる前記周波数の半サイクルでは、前記第2の電極の電位が前記自己バイアス電圧よりも低くなって、前記第2の電極に入射するイオンのエネルギーが引き上げられ、前記交流の電圧が正極性になる前記周波数の半サイクルでは、前記第2の電極の電位が前記自己バイアス電圧よりも高くなって、前記処理容器の側壁付近のプラズマのポテンシャルが引き上げられるように、前記交流電源より出力される前記交流の電力を100W以上で制御し、
前記交流の電圧が負極性になる前記周波数の半サイクルと、前記交流の電圧が正極性になる前記周波数の半サイクルとを繰り返すことによって、前記交流電源より前記交流が出力されている間、前記第2の電極に入射するイオンのエネルギーが引き上げられることと、前記処理容器の側壁付近のプラズマのポテンシャルが引き上げられることが繰り返される、
ことを特徴とするプラズマエッチング方法。 - 前記第1の電極にイオンの引き込みに適した周波数を有する第2の高周波を印加する、請求項5に記載のプラズマエッチング方法。
- 前記エッチングガスが、フルオロカーボンガスとアルゴンガスと酸素ガスとを含む、請求項5または請求項6に記載のプラズマエッチング方法。
- 前記第2の電極の母材がシリコンを含む、請求項5〜7のいずれか一項に記載のプラズマエッチング方法。
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