JP6426563B2 - 感光性組成物、硬化膜の製造方法、液晶表示装置の製造方法、有機エレクトロルミネッセンス表示装置の製造方法、およびタッチパネルの製造方法 - Google Patents

感光性組成物、硬化膜の製造方法、液晶表示装置の製造方法、有機エレクトロルミネッセンス表示装置の製造方法、およびタッチパネルの製造方法 Download PDF

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JP6426563B2
JP6426563B2 JP2015171380A JP2015171380A JP6426563B2 JP 6426563 B2 JP6426563 B2 JP 6426563B2 JP 2015171380 A JP2015171380 A JP 2015171380A JP 2015171380 A JP2015171380 A JP 2015171380A JP 6426563 B2 JP6426563 B2 JP 6426563B2
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group
carbon atoms
photosensitive composition
compound
preferable
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JP2017049369A (ja
Inventor
豪 安藤
豪 安藤
健太 山▲ざき▼
健太 山▲ざき▼
真崎　慶央
慶央 真崎
山田　悟
悟 山田
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2015171380A priority Critical patent/JP6426563B2/ja
Priority to TW105124866A priority patent/TWI695224B/zh
Priority to KR1020160104651A priority patent/KR20170026142A/ko
Priority to CN201610739063.8A priority patent/CN106483763A/zh
Publication of JP2017049369A publication Critical patent/JP2017049369A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/12—Esters of monohydric alcohols or phenols
    • C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/22—Esters containing halogen
    • C08F20/24—Esters containing halogen containing perhaloalkyl radicals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G03F7/2055—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser for the production of printing plates; Exposure of liquid photohardening compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Human Computer Interaction (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
JP2015171380A 2015-08-31 2015-08-31 感光性組成物、硬化膜の製造方法、液晶表示装置の製造方法、有機エレクトロルミネッセンス表示装置の製造方法、およびタッチパネルの製造方法 Expired - Fee Related JP6426563B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015171380A JP6426563B2 (ja) 2015-08-31 2015-08-31 感光性組成物、硬化膜の製造方法、液晶表示装置の製造方法、有機エレクトロルミネッセンス表示装置の製造方法、およびタッチパネルの製造方法
TW105124866A TWI695224B (zh) 2015-08-31 2016-08-05 感光性組成物、硬化膜的製造方法、液晶顯示裝置的製造方法、有機電激發光顯示裝置的製造方法以及觸控面板的製造方法
KR1020160104651A KR20170026142A (ko) 2015-08-31 2016-08-18 감광성 조성물, 경화막의 제조 방법, 액정 표시 장치의 제조 방법, 유기 일렉트로루미네선스 표시 장치의 제조 방법, 및 터치패널의 제조 방법
CN201610739063.8A CN106483763A (zh) 2015-08-31 2016-08-26 感光性组合物、固化膜的制造方法、液晶显示装置的制造方法、有机电致发光显示装置的制造方法及触摸面板的制造方法

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JP2015171380A JP6426563B2 (ja) 2015-08-31 2015-08-31 感光性組成物、硬化膜の製造方法、液晶表示装置の製造方法、有機エレクトロルミネッセンス表示装置の製造方法、およびタッチパネルの製造方法

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JP6426563B2 true JP6426563B2 (ja) 2018-11-21

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KR (1) KR20170026142A (zh)
CN (1) CN106483763A (zh)
TW (1) TWI695224B (zh)

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JP6844121B2 (ja) * 2016-02-10 2021-03-17 Dic株式会社 着色硬化性樹脂組成物及びその硬化膜
JP6808963B2 (ja) * 2016-04-21 2021-01-06 Dic株式会社 樹脂組成物、及びそれを用いた物品
WO2018173840A1 (ja) * 2017-03-21 2018-09-27 東レ株式会社 感光性樹脂組成物、感光性樹脂組成物フィルム、絶縁膜および電子部品
KR102279447B1 (ko) * 2017-06-06 2021-07-20 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및 반도체 디바이스
CN110800373B (zh) * 2017-07-06 2022-09-13 Jsr株式会社 发光装置、带触摸屏的有机电致发光装置及发光装置的制造方法
WO2019216107A1 (ja) * 2018-05-11 2019-11-14 東レ株式会社 感光性樹脂組成物、フォトスペーサおよび液晶表示装置
CN113632005A (zh) * 2019-03-26 2021-11-09 富士胶片株式会社 感光性树脂组合物、转印膜、固化膜、层叠体及触摸面板的制造方法
JP2020173431A (ja) * 2019-04-09 2020-10-22 旭化成株式会社 ネガ型感光性樹脂組成物、ポリイミドの製造方法および硬化レリーフパターンの製造方法
JP7173147B2 (ja) * 2019-06-11 2022-11-16 東レ株式会社 導電層付基板及びタッチパネル用部材
JP2022151614A (ja) * 2021-03-23 2022-10-07 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品

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CN106483763A (zh) 2017-03-08
TWI695224B (zh) 2020-06-01
JP2017049369A (ja) 2017-03-09
KR20170026142A (ko) 2017-03-08
TW201710789A (zh) 2017-03-16

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