JP6414060B2 - 樹脂組成物、それを用いたパターン形成方法及び電子部品 - Google Patents
樹脂組成物、それを用いたパターン形成方法及び電子部品 Download PDFInfo
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- JP6414060B2 JP6414060B2 JP2015528134A JP2015528134A JP6414060B2 JP 6414060 B2 JP6414060 B2 JP 6414060B2 JP 2015528134 A JP2015528134 A JP 2015528134A JP 2015528134 A JP2015528134 A JP 2015528134A JP 6414060 B2 JP6414060 B2 JP 6414060B2
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- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 3
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- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
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- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
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- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
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- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
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- JCPYBTHJHRUCGT-UHFFFAOYSA-N tributoxy(isocyanatomethyl)silane Chemical compound N(=C=O)C[Si](OCCCC)(OCCCC)OCCCC JCPYBTHJHRUCGT-UHFFFAOYSA-N 0.000 description 1
- QKJDKLUGDDTSNP-UHFFFAOYSA-N triethoxy(6-isocyanatohexyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCCCCN=C=O QKJDKLUGDDTSNP-UHFFFAOYSA-N 0.000 description 1
- BOTMPGMIDPRZGP-UHFFFAOYSA-N triethoxy(isocyanatomethyl)silane Chemical compound CCO[Si](OCC)(OCC)CN=C=O BOTMPGMIDPRZGP-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- HPEPIADELDNCED-UHFFFAOYSA-N triethoxysilylmethanol Chemical compound CCO[Si](CO)(OCC)OCC HPEPIADELDNCED-UHFFFAOYSA-N 0.000 description 1
- HJLLHEIHBHLBIP-UHFFFAOYSA-N triethyl(3-isocyanatopropyl)silane Chemical compound CC[Si](CC)(CC)CCCN=C=O HJLLHEIHBHLBIP-UHFFFAOYSA-N 0.000 description 1
- RQCMZIGIXJABNU-UHFFFAOYSA-N triethyl(isocyanatomethyl)silane Chemical compound CC[Si](CC)(CC)CN=C=O RQCMZIGIXJABNU-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
- C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
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- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Materials For Photolithography (AREA)
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PCT/JP2014/003713 WO2015011893A1 (ja) | 2013-07-23 | 2014-07-14 | 樹脂組成物、それを用いたパターン形成方法及び電子部品 |
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TW (1) | TWI646151B (zh) |
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US11892773B2 (en) | 2020-09-24 | 2024-02-06 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component |
US12085856B2 (en) | 2020-08-04 | 2024-09-10 | Shin-Etsu Chemical Co., Ltd. | Positive photosensitive resin composition, positive photosensitive dry film, method for producing positive photosensitive dry film, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component |
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CN107850844B (zh) * | 2016-03-31 | 2021-09-07 | 旭化成株式会社 | 感光性树脂组合物、固化浮雕图案的制造方法和半导体装置 |
WO2018043262A1 (ja) * | 2016-08-31 | 2018-03-08 | 富士フイルム株式会社 | パターン形成方法、積層体の製造方法および電子デバイスの製造方法 |
JP6824389B2 (ja) * | 2017-03-29 | 2021-02-03 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法および半導体デバイス |
JP7078744B2 (ja) * | 2018-10-19 | 2022-05-31 | 富士フイルム株式会社 | 樹脂組成物、硬化膜、積層体、硬化膜の製造方法、および半導体デバイス |
CN109946925A (zh) * | 2019-04-08 | 2019-06-28 | 深圳先进技术研究院 | 一种化合物在促进聚酰亚胺低温固化中的应用、聚酰亚胺前体组合物及其用途 |
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JP5128574B2 (ja) * | 1999-03-30 | 2013-01-23 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
JP4592999B2 (ja) * | 2001-04-26 | 2010-12-08 | 新日鐵化学株式会社 | 新規な末端修飾したポリアミック酸及びそれを含む感光性樹脂組成物 |
JP2003255535A (ja) * | 2002-03-06 | 2003-09-10 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、パターン製造法及びこれを用いた電子部品 |
JP2003345012A (ja) * | 2002-05-28 | 2003-12-03 | Hitachi Chemical Dupont Microsystems Ltd | 感光性組成物、及びこれを用いた電子部品 |
JP4464396B2 (ja) * | 2003-06-06 | 2010-05-19 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | 新規な感光性樹脂組成物 |
JP5747437B2 (ja) * | 2009-04-14 | 2015-07-15 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物及びこれを用いた回路形成用基板 |
SG181464A1 (en) * | 2009-12-04 | 2012-07-30 | Toray Industries | Photosensitive resin composition, laminate utilizing same, and solid-state imaging device |
JP2011123219A (ja) * | 2009-12-09 | 2011-06-23 | Asahi Kasei E-Materials Corp | 感光性ポリアミド樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置 |
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Cited By (2)
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US12085856B2 (en) | 2020-08-04 | 2024-09-10 | Shin-Etsu Chemical Co., Ltd. | Positive photosensitive resin composition, positive photosensitive dry film, method for producing positive photosensitive dry film, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component |
US11892773B2 (en) | 2020-09-24 | 2024-02-06 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component |
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WO2015011893A1 (ja) | 2015-01-29 |
JPWO2015011893A1 (ja) | 2017-03-02 |
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