JP6411952B2 - 熱分解窒化ほう素容器の製造方法 - Google Patents
熱分解窒化ほう素容器の製造方法 Download PDFInfo
- Publication number
- JP6411952B2 JP6411952B2 JP2015117015A JP2015117015A JP6411952B2 JP 6411952 B2 JP6411952 B2 JP 6411952B2 JP 2015117015 A JP2015117015 A JP 2015117015A JP 2015117015 A JP2015117015 A JP 2015117015A JP 6411952 B2 JP6411952 B2 JP 6411952B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- pbn
- boron nitride
- film
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015117015A JP6411952B2 (ja) | 2015-06-09 | 2015-06-09 | 熱分解窒化ほう素容器の製造方法 |
DE102016006963.5A DE102016006963A1 (de) | 2015-06-09 | 2016-06-07 | Verfahren zum Herstellen eines Behälters aus pyrolytischem Bornitrid und Behälter aus pyrolytischem Bornitrid |
CN201610405107.3A CN106245000B (zh) | 2015-06-09 | 2016-06-08 | 热分解氮化硼容器的制造方法及热分解氮化硼容器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015117015A JP6411952B2 (ja) | 2015-06-09 | 2015-06-09 | 熱分解窒化ほう素容器の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017002357A JP2017002357A (ja) | 2017-01-05 |
JP6411952B2 true JP6411952B2 (ja) | 2018-10-24 |
Family
ID=57395054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015117015A Active JP6411952B2 (ja) | 2015-06-09 | 2015-06-09 | 熱分解窒化ほう素容器の製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6411952B2 (zh) |
CN (1) | CN106245000B (zh) |
DE (1) | DE102016006963A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108545914B (zh) * | 2018-05-18 | 2022-09-06 | 山东国晶新材料有限公司 | 一种解决氧化的防起层的热解氮化硼涂层热弯模具的制备方法 |
CN110219051A (zh) * | 2019-06-12 | 2019-09-10 | 有研光电新材料有限责任公司 | 从热解氮化硼坩埚中分离砷化镓单晶的分离方法以及分离装置 |
CN111321388A (zh) * | 2020-03-26 | 2020-06-23 | 久钻科技(成都)有限公司 | 一种金刚石薄膜退涂方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0431309A (ja) * | 1990-05-24 | 1992-02-03 | Shin Etsu Chem Co Ltd | 熱分解窒化ほう素成形体の製造方法 |
JPH1087306A (ja) | 1996-09-10 | 1998-04-07 | Shin Etsu Chem Co Ltd | 熱分解窒化ホウ素容器 |
JP3212522B2 (ja) * | 1996-12-27 | 2001-09-25 | 信越化学工業株式会社 | 分子線エピタキシー用熱分解窒化硼素るつぼ |
JP3596337B2 (ja) | 1998-03-25 | 2004-12-02 | 住友電気工業株式会社 | 化合物半導体結晶の製造方法 |
JP2003146791A (ja) | 2001-11-19 | 2003-05-21 | Sumitomo Metal Mining Co Ltd | 化合物半導体単結晶の製造方法 |
CN101643932B (zh) * | 2009-09-09 | 2011-07-27 | 北京博宇半导体工艺器皿技术有限公司 | 一种低织构的热解氮化硼(pbn)薄壁容器及其制备方法 |
CN102586754B (zh) * | 2012-03-06 | 2013-10-23 | 山东国晶新材料有限公司 | 一种易脱模的热解氮化硼坩埚的制备方法 |
CN103803513B (zh) * | 2014-03-13 | 2015-06-10 | 中国人民解放军国防科学技术大学 | 一种氮化硼纳米管的制备方法 |
-
2015
- 2015-06-09 JP JP2015117015A patent/JP6411952B2/ja active Active
-
2016
- 2016-06-07 DE DE102016006963.5A patent/DE102016006963A1/de active Pending
- 2016-06-08 CN CN201610405107.3A patent/CN106245000B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN106245000A (zh) | 2016-12-21 |
JP2017002357A (ja) | 2017-01-05 |
DE102016006963A1 (de) | 2016-12-15 |
CN106245000B (zh) | 2019-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW471052B (en) | Silicon focus ring and its manufacturing method | |
JP2004530306A5 (zh) | ||
JP6279619B2 (ja) | 半導体基板の製造方法 | |
JP6411952B2 (ja) | 熱分解窒化ほう素容器の製造方法 | |
JP2018027893A (ja) | Iii族窒化物半導体単結晶の製造方法 | |
JP2015182948A (ja) | 炭化ケイ素単結晶の製造方法 | |
TWI772866B (zh) | 晶圓以及其製造方法 | |
JP2013004825A5 (zh) | ||
JP2021195299A (ja) | Iii族窒化物系エピタキシャル成長用基板とその製造方法 | |
CN111819311A (zh) | 碳化硅单晶的制造方法 | |
CN116084011A (zh) | 一种碳化硅复合衬底及其制造方法 | |
WO2021250991A1 (ja) | Iii族窒化物系エピタキシャル成長用基板とその製造方法 | |
JP5948988B2 (ja) | 炭化珪素単結晶の製造方法 | |
KR101807166B1 (ko) | SiC 기판의 제조방법 | |
KR101419472B1 (ko) | 단결정 성장용 종자정의 제조 방법, 상기 종자정을 이용한 단결정 성장 방법 | |
CN107923068B (zh) | 单晶硅提拉装置内的部件的再生方法 | |
JPH0977595A (ja) | 炭化珪素単結晶の製造方法 | |
JPH0797299A (ja) | SiC単結晶の成長方法 | |
CN111902573B (zh) | 砷化镓单晶和砷化镓单晶基板 | |
CN113322520A (zh) | 晶片及其制造方法 | |
TWI793167B (zh) | 砷化鎵系化合物半導體結晶及晶圓群 | |
KR101544904B1 (ko) | 고온 반응을 이용한 종자정 접착 방법 | |
US20220372653A1 (en) | Method for reducing structural damage to the surface of monocrystalline aluminium-nitride substrates, and monocrystalline aluminium-nitride substrates that can be produced by a method of this type | |
JP2005029459A (ja) | 炭化珪素単結晶の成長方法、炭化珪素種結晶および炭化珪素単結晶 | |
EP4324961A1 (en) | Method for producing a bulk sic single crystal with improved quality using a sic seed crystal with a temporary protective oxide layer, and sic seed crystal with protective oxide layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170726 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180315 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180403 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180522 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180911 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180927 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6411952 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |