JP6411952B2 - 熱分解窒化ほう素容器の製造方法 - Google Patents

熱分解窒化ほう素容器の製造方法 Download PDF

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Publication number
JP6411952B2
JP6411952B2 JP2015117015A JP2015117015A JP6411952B2 JP 6411952 B2 JP6411952 B2 JP 6411952B2 JP 2015117015 A JP2015117015 A JP 2015117015A JP 2015117015 A JP2015117015 A JP 2015117015A JP 6411952 B2 JP6411952 B2 JP 6411952B2
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container
pbn
boron nitride
film
carbon
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JP2015117015A
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Japanese (ja)
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JP2017002357A (ja
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狩野　正樹
正樹 狩野
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Priority to JP2015117015A priority Critical patent/JP6411952B2/ja
Priority to DE102016006963.5A priority patent/DE102016006963A1/de
Priority to CN201610405107.3A priority patent/CN106245000B/zh
Publication of JP2017002357A publication Critical patent/JP2017002357A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015117015A 2015-06-09 2015-06-09 熱分解窒化ほう素容器の製造方法 Active JP6411952B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015117015A JP6411952B2 (ja) 2015-06-09 2015-06-09 熱分解窒化ほう素容器の製造方法
DE102016006963.5A DE102016006963A1 (de) 2015-06-09 2016-06-07 Verfahren zum Herstellen eines Behälters aus pyrolytischem Bornitrid und Behälter aus pyrolytischem Bornitrid
CN201610405107.3A CN106245000B (zh) 2015-06-09 2016-06-08 热分解氮化硼容器的制造方法及热分解氮化硼容器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015117015A JP6411952B2 (ja) 2015-06-09 2015-06-09 熱分解窒化ほう素容器の製造方法

Publications (2)

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JP2017002357A JP2017002357A (ja) 2017-01-05
JP6411952B2 true JP6411952B2 (ja) 2018-10-24

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JP2015117015A Active JP6411952B2 (ja) 2015-06-09 2015-06-09 熱分解窒化ほう素容器の製造方法

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JP (1) JP6411952B2 (zh)
CN (1) CN106245000B (zh)
DE (1) DE102016006963A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108545914B (zh) * 2018-05-18 2022-09-06 山东国晶新材料有限公司 一种解决氧化的防起层的热解氮化硼涂层热弯模具的制备方法
CN110219051A (zh) * 2019-06-12 2019-09-10 有研光电新材料有限责任公司 从热解氮化硼坩埚中分离砷化镓单晶的分离方法以及分离装置
CN111321388A (zh) * 2020-03-26 2020-06-23 久钻科技(成都)有限公司 一种金刚石薄膜退涂方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0431309A (ja) * 1990-05-24 1992-02-03 Shin Etsu Chem Co Ltd 熱分解窒化ほう素成形体の製造方法
JPH1087306A (ja) 1996-09-10 1998-04-07 Shin Etsu Chem Co Ltd 熱分解窒化ホウ素容器
JP3212522B2 (ja) * 1996-12-27 2001-09-25 信越化学工業株式会社 分子線エピタキシー用熱分解窒化硼素るつぼ
JP3596337B2 (ja) 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法
JP2003146791A (ja) 2001-11-19 2003-05-21 Sumitomo Metal Mining Co Ltd 化合物半導体単結晶の製造方法
CN101643932B (zh) * 2009-09-09 2011-07-27 北京博宇半导体工艺器皿技术有限公司 一种低织构的热解氮化硼(pbn)薄壁容器及其制备方法
CN102586754B (zh) * 2012-03-06 2013-10-23 山东国晶新材料有限公司 一种易脱模的热解氮化硼坩埚的制备方法
CN103803513B (zh) * 2014-03-13 2015-06-10 中国人民解放军国防科学技术大学 一种氮化硼纳米管的制备方法

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CN106245000A (zh) 2016-12-21
JP2017002357A (ja) 2017-01-05
DE102016006963A1 (de) 2016-12-15
CN106245000B (zh) 2019-12-13

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