JP6410008B2 - 面発光レーザーおよび原子発振器 - Google Patents
面発光レーザーおよび原子発振器 Download PDFInfo
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- JP6410008B2 JP6410008B2 JP2013263467A JP2013263467A JP6410008B2 JP 6410008 B2 JP6410008 B2 JP 6410008B2 JP 2013263467 A JP2013263467 A JP 2013263467A JP 2013263467 A JP2013263467 A JP 2013263467A JP 6410008 B2 JP6410008 B2 JP 6410008B2
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
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Description
基板と、
前記基板上方に設けられた第1ミラー層と、
前記第1ミラー層上方に設けられた活性層と、
前記活性層上方に設けられた第2ミラー層と、
前記第1ミラー層に電気的に接続され、互いに離間して設けられた第1電極および第2電極と、
前記第2ミラー層に電気的に接続された第3電極と、
を含み、
前記第1ミラー層、前記活性層、および前記第2ミラー層は、積層体を構成し、
前記積層体は、前記活性層で発生した光を共振させる共振部を有し、
平面視において、前記積層体を囲む絶縁層が設けられ、
前記平面視において、前記絶縁層は、前記第1電極と前記第2電極との間に設けられている。
前記平面視において、前記共振部は、前記第1電極と前記第2電極との間に設けられていてもよい。
前記第1ミラー層は、前記基板上方に設けられた第1部分と、前記第1部分上方に設けられ、前記積層体の一部を構成している第2部分と、を有し、
前記第1電極および前記第2電極は、前記第1部分上に設けられ、
前記第3電極は、前記積層体上に設けられていてもよい。
本発明に係る面発光レーザーを含む。
まず、本実施形態に係る面発光レーザーについて、図面を参照しながら説明する。図1は、本実施形態に係る面発光レーザー100を模式的に示す平面図である。図2は、本実施形態に係る面発光レーザー100を模式的に示す図1のII−II線断面図である。図3は、本実施形態に係る面発光レーザー100を模式的に示す平面図である。図4は、本実施形態に係る面発光レーザー100を模式的に示す図3のIV−IV線断面図である。
0にて発生する光を偏光させる。ここで、光を偏光させるとは、光の電場の振動方向を一定にすることをいう。第1歪付与部2aおよび第2歪付与部2bを構成する半導体層(第1ミラー層20、活性層30、第2ミラー層40、電流狭窄層42、コンタクト層50、第1領域60、および第2領域62)は、活性層30に付与する歪みを発生させる発生源となる。第1歪付与部2aおよび第2歪付与部2bは、複数の酸化層6を有する第1領域60と、複数の酸化層16を有する第2領域62と、を有しているため、活性層30に大きな歪みを付与することができる。
第1部分20a上に設けられ、第3電極82は、積層体2上に設けられている。これにより、例えば、片面電極構造を得ることができる。
次に、本実施形態に係る面発光レーザーの製造方法について、図面を参照しながら説明する。図5〜図8は、本実施形態に係る面発光レーザー100の製造工程を模式的に示す断面図であって、図2に対応している。
次に、本実施形態に係る原子発振器について、図面を参照しながら説明する。図9は、本実施形態に係る原子発振器1000を示す機能ブロック図である。
Claims (6)
- 基板と、
前記基板上方に設けられた第1ミラー層と、
前記第1ミラー層上方に設けられた活性層と、
前記活性層上方に設けられた第2ミラー層と、
前記第1ミラー層に電気的に接続され、互いに離間して設けられた第1電極および第2電極と、
前記第2ミラー層に電気的に接続された第3電極と、
を含み、
前記第1ミラー層、前記活性層、および前記第2ミラー層は、積層体を構成し、
前記積層体は、
前記活性層で発生した光を共振させる共振部と、
前記活性層に歪みを付与する第1歪付与部および第2歪付与部と、
を有し、
前記第1歪付与部および前記第2歪付与部は、平面視において、前記共振部から互いに反対方向に突出し、
前記平面視において、前記積層体を囲む絶縁層が設けられ、
前記平面視において、前記絶縁層は、前記第1電極と前記第2電極との間に設けられ、
前記第1歪付与部および前記第2歪付与部は、第1方向から前記共振部を挟み、
前記第1電極および前記第2電極は、前記第1方向に長手方向を持つ形状であり、
前記平面視において、
前記絶縁層の外縁は、前記第1方向に延びる第1直線、前記第1直線と対向する第2直線、前記第1直線および前記第2直線と連続する第1曲線、および前記第1曲線と対向し、前記第1直線および前記第2直線とに連続する第2曲線を有し、
前記共振部は、前記第1直線と前記第2直線との間に位置し、
前記第1電極の外縁は、前記第1直線に対向する第3直線を有し、
前記第2電極の外縁は、前記第2直線に対向する第4直線を有し、
前記第3直線の長さ、および前記第4直線の長さは、前記積層体の前記第1方向の長さよりも大きいことを特徴とする面発光レーザー。 - 請求項1において、
前記平面視において、前記共振部は、前記第1電極と前記第2電極との間に設けられていることを特徴とする面発光レーザー。 - 請求項1または2において、
前記第1ミラー層は、前記基板上方に設けられた第1部分と、前記第1部分上方に設けられ、前記積層体の一部を構成している第2部分と、を有し、
前記第1電極および前記第2電極は、前記第1部分上に設けられ、
前記第3電極は、前記積層体上に設けられていることを特徴とする面発光レーザー。 - 請求項1ないし3のいずれか1項において、
前記第1電極および前記第2電極は、前記第1方向に交差する第2方向に並んで配置されていることを特徴とする面発光レーザー。 - 請求項1ないし4のいずれか1項において、
前記絶縁層は、長手方向を有する形状であり、
前記絶縁層の長手方向と前記第1電極および前記第2電極の長手方向とは、一致することを特徴とする面発光レーザー。 - 請求項1ないし5のいずれか1項に記載の面発光レーザーを含む原子発振器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2013263467A JP6410008B2 (ja) | 2013-12-20 | 2013-12-20 | 面発光レーザーおよび原子発振器 |
CN201410781540.8A CN104734013B (zh) | 2013-12-20 | 2014-12-16 | 面发光激光器以及原子振荡器 |
US14/573,622 US9197034B2 (en) | 2013-12-20 | 2014-12-17 | Vertical cavity surface emitting laser and atomic oscillator |
EP14198852.7A EP2892116A3 (en) | 2013-12-20 | 2014-12-18 | Vertical cavity surface emitting laser and atomic oscillator |
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JP2013263467A JP6410008B2 (ja) | 2013-12-20 | 2013-12-20 | 面発光レーザーおよび原子発振器 |
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JP2015119146A JP2015119146A (ja) | 2015-06-25 |
JP6410008B2 true JP6410008B2 (ja) | 2018-10-24 |
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US (1) | US9197034B2 (ja) |
EP (1) | EP2892116A3 (ja) |
JP (1) | JP6410008B2 (ja) |
CN (1) | CN104734013B (ja) |
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JP6299955B2 (ja) * | 2013-12-20 | 2018-03-28 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
JP6274404B2 (ja) * | 2013-12-20 | 2018-02-07 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
JP6519169B2 (ja) * | 2014-12-19 | 2019-05-29 | セイコーエプソン株式会社 | 原子共鳴遷移装置、原子発振器、時計、電子機器および移動体 |
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JP2002176226A (ja) * | 2000-09-22 | 2002-06-21 | Toshiba Corp | 光素子およびその製造方法 |
AU2003282827A1 (en) * | 2002-10-11 | 2004-05-04 | Ziva Corporation | Current-controlled polarization switching vertical cavity surface emitting laser |
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JP2007165501A (ja) | 2005-12-13 | 2007-06-28 | Seiko Epson Corp | 面発光型半導体レーザ及びその製造方法 |
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JP5260958B2 (ja) * | 2006-03-14 | 2013-08-14 | 古河電気工業株式会社 | 面発光レーザ素子アレイ |
JP5034368B2 (ja) | 2006-08-17 | 2012-09-26 | 富士ゼロックス株式会社 | 高周波特性が改善された表面発光型半導体レーザ素子 |
JP5003416B2 (ja) | 2007-11-06 | 2012-08-15 | 住友電気工業株式会社 | 面発光半導体レーザ |
JP2010199197A (ja) * | 2009-02-24 | 2010-09-09 | Fuji Xerox Co Ltd | 半導体発光装置 |
JP5699467B2 (ja) * | 2010-07-14 | 2015-04-08 | セイコーエプソン株式会社 | 光学モジュールおよび原子発振器 |
JP2013065692A (ja) * | 2011-09-16 | 2013-04-11 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP2013093439A (ja) * | 2011-10-26 | 2013-05-16 | Seiko Epson Corp | 面発光型半導体レーザーの製造方法 |
JP6303255B2 (ja) * | 2011-12-02 | 2018-04-04 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
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EP2892116A3 (en) | 2015-10-21 |
CN104734013B (zh) | 2019-07-26 |
US20150180209A1 (en) | 2015-06-25 |
CN104734013A (zh) | 2015-06-24 |
EP2892116A2 (en) | 2015-07-08 |
JP2015119146A (ja) | 2015-06-25 |
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