KR100703530B1 - 면 발광 레이저 - Google Patents
면 발광 레이저 Download PDFInfo
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- KR100703530B1 KR100703530B1 KR1020060012621A KR20060012621A KR100703530B1 KR 100703530 B1 KR100703530 B1 KR 100703530B1 KR 1020060012621 A KR1020060012621 A KR 1020060012621A KR 20060012621 A KR20060012621 A KR 20060012621A KR 100703530 B1 KR100703530 B1 KR 100703530B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (5)
- 면 발광 레이저에 있어서,기판 및 상기 기판 상에 성장된 제1 미러와;상기 제1 미러 상에 성장되며 상기 제1 미러와 광을 공진시키는 제2 미러와;상기 제1 및 제2 미러의 사이에 위치되며 상기 광을 생성 및 증폭시키는 활성층과;상기 활성층 상에 성장되며 상기 활성층에 전류를 인가하는 상부 전극 및 상기 기판 상에 형성되며 상기 활성층에 전류를 인가하기 위한 하부 전극과;상기 활성층 및 제2 미러가 매몰되게 상기 제1 미러 상에 형성된 평탄화용 폴리머와;상기 상부 전극으로부터 상기 평탄화용 폴리머의 상부에 노출되게 수직 상향 연장된 제1 외부 단자 및 상기 하부 전극으로부터 상기 평탄화용 폴리머의 상부에 일면이 노출되게 연장된 제2 외부 단자를 포함함을 특징으로 하는 면 발광 레이저.
- 제1 항에 있어서, 상기 면 발광 레이저는,상기 활성층과 상기 제1 미러 사이에 위치된 제1 접촉 층과;상기 제2 미러와 상기 활성층 사이에 위치된 제2 접촉 층과;상기 제2 접촉 층과 상기 활성층의 사이에 개재되며 절연층과;상기 상부 전극과 상기 제1 접촉 층 사이에 위치되며 상기 상부 전극과 상기 제1 접촉 층 사이를 전기적으로 절연시키기 위한 절연 패드를 더 포함함을 특징으로 하는 면 발광 레이저.
- 면 발광 레이저에 있어서,기판 및 상기 기판 상에 일단의 측면이 노출되게 형성된 제1 미러와;상기 제1 미러 상에 성장되며 상기 제1 미러와 광을 공진시키는 제2 미러와;상기 제1 및 제2 미러의 사이에 위치되며 상기 광을 생성 및 증폭시키는 활성층과;상기 활성층 상에 성장되며 상기 활성층에 전류를 인가하는 상부 전극 및 상기 제1 미러 상면으로부터 상기 홈까지 연장된 하부 전극과;상기 활성층 및 제2 미러가 매몰되게 상기 제1 미러 상에 형성된 평탄화용 폴리머와;상기 상부 전극으로부터 상기 평탄화용 폴리머의 상부에 노출되게 수직 상향 연장된 제1 외부 단자 및 상기 하부 전극으로부터 상기 평탄화용 폴리머의 상부에 일면이 노출되게 연장된 제2 외부 단자를 포함함을 특징으로 하는 면 발광 레이저.
- 제3 항에 있어서, 상기 면 발광 레이저는,상기 제2 미러와 상기 활성층 사이에 위치된 접촉 층과;상기 접촉 층과 상기 활성층의 사이에 개재되며 절연층과;상기 상부 전극과 상기 제1 접촉 층 사이에 위치되며 상기 상부 전극과 상기 제1 접촉 층 사이를 전기적으로 절연시키기 위한 제1 절연 패드를 더 포함함을 특징으로 하는 면 발광 레이저.
- 제3 항에 있어서,상기 평탄화용 폴리머는 폴리이미드, 에폭시, BCB, PBO 중 하나 또는 둘 이상이 조합된 물질이 사용됨을 특징으로 하는 면 발광 레이저.
Priority Applications (2)
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KR1020060012621A KR100703530B1 (ko) | 2006-02-09 | 2006-02-09 | 면 발광 레이저 |
US11/584,987 US7433379B2 (en) | 2006-02-09 | 2006-10-23 | Vertical-cavity surface emitting laser |
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KR1020060012621A KR100703530B1 (ko) | 2006-02-09 | 2006-02-09 | 면 발광 레이저 |
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KR100703530B1 true KR100703530B1 (ko) | 2007-04-03 |
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KR1020060012621A KR100703530B1 (ko) | 2006-02-09 | 2006-02-09 | 면 발광 레이저 |
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KR (1) | KR100703530B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190031327A (ko) * | 2016-08-08 | 2019-03-25 | 피니사 코포레이숀 | 에칭된 평탄화 vcsel |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6410008B2 (ja) | 2013-12-20 | 2018-10-24 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
US10944242B2 (en) * | 2017-08-14 | 2021-03-09 | Lumentum Operations Llc | Surface-mount compatible VCSEL array |
US10666020B2 (en) * | 2017-09-20 | 2020-05-26 | Lumentum Operations Llc | Reconfigurable emitter array |
WO2021194905A1 (en) * | 2020-03-25 | 2021-09-30 | Array Photonics, Inc. | Intracavity contact vcsel structure and method for forming the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6485996B2 (en) | 1998-06-25 | 2002-11-26 | Lucent Technologies Inc. | Method of making wafer having top and bottom emitting vertical-cavity lasers |
JP2002368334A (ja) | 2001-03-26 | 2002-12-20 | Seiko Epson Corp | 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路 |
US20040129991A1 (en) | 2002-09-25 | 2004-07-08 | Lai Jay Jie | Front side illuminated photodiode with backside bump |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5568501A (en) * | 1993-11-01 | 1996-10-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and method for producing the same |
US6589805B2 (en) * | 2001-03-26 | 2003-07-08 | Gazillion Bits, Inc. | Current confinement structure for vertical cavity surface emitting laser |
US6717969B2 (en) * | 2001-07-16 | 2004-04-06 | Fuji Photo Film Co., Ltd. | Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer |
JP2005260023A (ja) * | 2004-03-12 | 2005-09-22 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
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2006
- 2006-02-09 KR KR1020060012621A patent/KR100703530B1/ko not_active IP Right Cessation
- 2006-10-23 US US11/584,987 patent/US7433379B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6485996B2 (en) | 1998-06-25 | 2002-11-26 | Lucent Technologies Inc. | Method of making wafer having top and bottom emitting vertical-cavity lasers |
JP2002368334A (ja) | 2001-03-26 | 2002-12-20 | Seiko Epson Corp | 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路 |
US20040129991A1 (en) | 2002-09-25 | 2004-07-08 | Lai Jay Jie | Front side illuminated photodiode with backside bump |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190031327A (ko) * | 2016-08-08 | 2019-03-25 | 피니사 코포레이숀 | 에칭된 평탄화 vcsel |
US10644482B2 (en) | 2016-08-08 | 2020-05-05 | Finisar Corporation | Etched planarized VCSEL |
KR102182921B1 (ko) * | 2016-08-08 | 2020-11-25 | 피니사 코포레이숀 | 에칭된 평탄화 vcsel |
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US20070183472A1 (en) | 2007-08-09 |
US7433379B2 (en) | 2008-10-07 |
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