JP6323651B2 - 面発光レーザーおよび原子発振器 - Google Patents
面発光レーザーおよび原子発振器 Download PDFInfo
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- JP6323651B2 JP6323651B2 JP2013263468A JP2013263468A JP6323651B2 JP 6323651 B2 JP6323651 B2 JP 6323651B2 JP 2013263468 A JP2013263468 A JP 2013263468A JP 2013263468 A JP2013263468 A JP 2013263468A JP 6323651 B2 JP6323651 B2 JP 6323651B2
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
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Description
基板と、
前記基板上方に設けられた積層体と、
少なくとも一部が前記積層体上方に設けられた電極と、
前記電極と電気的に接続されており、ワイヤーボンディングされるパッドと、
を含み、
前記積層体は、前記基板上方に設けられた第1ミラー層、前記第1ミラー層上方に設けられた活性層、および前記活性層上方に設けられた第2ミラー層を含み、
平面視において、前記積層体は、第1歪付与部と、第2歪付与部と、前記第1歪付与部と前記第2歪付与部との間に設けられ、前記活性層で発生した光を共振させる共振部と、を有し、
平面視において、前記パッドは、前記第1歪付与部および前記第2歪付与部の少なくとも一方とは重ならない位置に設けられている。
ーボンディングの際に第1歪付与部および第2歪付与部の少なくとも一方が損傷を受ける可能性を低減できる。そのため、このような面発光レーザーでは、レーザー光の偏光方向の安定化を図ることができる。
平面視において、前記パッドは、前記共振部とは重ならない位置に設けられている。
前記第1歪付与部は、第1幅を有し、
前記第2歪付与部は、第2幅を有し、
前記共振部は、前記第1幅および前記第2幅の少なくとも一方よりも広い第3幅を有する。
本発明に係る面発光レーザーを含む。
まず、本実施形態に係る面発光レーザーについて、図面を参照しながら説明する。図1は、本実施形態に係る面発光レーザー100を模式的に示す平面図である。図2は、本実施形態に係る面発光レーザー100を模式的に示す図1のII−II線断面図である。図3は、本実施形態に係る面発光レーザー100を模式的に示す平面図である。図4は、本実施形態に係る面発光レーザー100を模式的に示す図3のIV−IV線断面図である。
る。活性層30で発生した光は、第1ミラー層20と第2ミラー層40との間を往復し(多重反射し)、その際に誘導放出が起こって、強度が増幅される。そして、光利得が光損失を上回ると、レーザー発振が起こり、コンタクト層50の上面から、垂直方向に(第1ミラー層20と活性層30との積層方向に)レーザー光が射出する。
る。第2電極82は、活性層30に電流を注入するための他方の電極である。
0は、第1歪付与部2aの少なくとも一部の上面102と、第1歪付与部2aの少なくとも一部の第1側面104と、第1歪付与部2aの少なくとも一部の第2側面106と、に設けられている。図示の例では、樹脂層70は、第1歪付与部2aの全体を覆っている。具体的には、樹脂層70は、上面102全体と、第1側面104全体と、第2側面106全体と、第3側面108全体と、に設けられている。
次に、本実施形態に係る面発光レーザーの製造方法について、図面を参照しながら説明する。図9〜図12は、本実施形態に係る面発光レーザー100の製造工程を模式的に示す断面図であって、図2に対応している。
を(応力を)活性層30に付与することができる。
次に、本実施形態に係る原子発振器について、図面を参照しながら説明する。図13は、本実施形態に係る原子発振器1000を示す機能ブロック図である。
Claims (4)
- 基板と、
前記基板上方に設けられた積層体と、
少なくとも一部が前記積層体上方に設けられた電極と、
引き出し配線を介して前記電極と電気的に接続されており、ワイヤーボンディングされるパッドと、
前記積層体の側面に設けられた樹脂層と、
を含み、
前記積層体は、前記基板上方に設けられた第1ミラー層、前記第1ミラー層上方に設けられた活性層、および前記活性層上方に設けられた第2ミラー層を含み、
平面視において、前記積層体は、第1歪付与部と、第2歪付与部と、前記第1歪付与部と前記第2歪付与部との間に設けられ、前記活性層で発生した光を共振させる共振部と、を有し、
平面視において、前記パッドは、前記第1歪付与部および前記第2歪付与部の少なくとも一方とは重ならない位置に設けられ、
前記樹脂層は、
前記基板の上方であって、平面視において前記積層体と重なっていない第1部分と、
前記第1歪付与部上に設けられた第2部分と、
を有し、
前記第1部分の厚さは、前記第2部分の厚さよりも大きく、
前記パッドは、前記第1部分上に設けられ、
前記電極は、前記第2部分上に設けられ、
前記引き出し配線は、前記第1部分上と前記第2部分上とにわたって設けられていることを特徴とする、面発光レーザー。 - 請求項1において、
平面視において、前記パッドは、前記共振部とは重ならない位置に設けられていることを特徴とする、面発光レーザー。 - 請求項1または2において、
前記第1歪付与部は、第1幅を有し、
前記第2歪付与部は、第2幅を有し、
前記共振部は、前記第1幅および前記第2幅の少なくとも一方よりも広い第3幅を有することを特徴とする、面発光レーザー。 - 請求項1ないし3のいずれか1項に記載の面発光レーザーを含む、原子発振器。
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JP2013263468A JP6323651B2 (ja) | 2013-12-20 | 2013-12-20 | 面発光レーザーおよび原子発振器 |
CN201410767410.9A CN104734011A (zh) | 2013-12-20 | 2014-12-12 | 面发光激光器以及原子振荡器 |
EP14198851.9A EP2887467A3 (en) | 2013-12-20 | 2014-12-18 | Vertical cavity surface emitting laser and atomic oscillator |
US14/576,675 US9397478B2 (en) | 2013-12-20 | 2014-12-19 | Vertical cavity surface emitting laser and atomic oscillator |
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JP6274404B2 (ja) * | 2013-12-20 | 2018-02-07 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
CN105606910A (zh) * | 2014-11-21 | 2016-05-25 | 中兴通讯股份有限公司 | 光信噪比检测电路、装置及方法 |
JP6786961B2 (ja) | 2016-08-29 | 2020-11-18 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
JP6414183B2 (ja) * | 2016-11-16 | 2018-10-31 | 富士ゼロックス株式会社 | 発光素子アレイ、および光伝送装置 |
JP2020004783A (ja) * | 2018-06-26 | 2020-01-09 | セイコーエプソン株式会社 | 面発光レーザー、面発光レーザーの製造方法、光信号伝送装置、ロボットおよび原子発振器 |
JP2020167214A (ja) | 2019-03-28 | 2020-10-08 | セイコーエプソン株式会社 | 半導体レーザーおよび原子発振器 |
JP2020167213A (ja) | 2019-03-28 | 2020-10-08 | セイコーエプソン株式会社 | 半導体レーザーおよび原子発振器 |
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JP3482824B2 (ja) | 1997-07-29 | 2004-01-06 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
EP1104056A1 (en) * | 1999-11-18 | 2001-05-30 | Avalon Photonics Ltd | A polarization controlled vertical-cavity surface-emitting laser |
JP4138629B2 (ja) * | 2003-11-06 | 2008-08-27 | 株式会社東芝 | 面発光型半導体素子及びその製造方法 |
JP4815812B2 (ja) * | 2004-02-04 | 2011-11-16 | 富士ゼロックス株式会社 | 垂直共振器型面発光半導体レーザ装置 |
US20050169336A1 (en) * | 2004-02-04 | 2005-08-04 | Fuji Xerox Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser |
JP4232034B2 (ja) * | 2004-07-01 | 2009-03-04 | セイコーエプソン株式会社 | 面発光型半導体レーザの製造方法 |
JP4164685B2 (ja) * | 2004-07-06 | 2008-10-15 | セイコーエプソン株式会社 | 光素子及びその製造方法 |
JP5381180B2 (ja) * | 2009-03-10 | 2014-01-08 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および情報処理装置 |
JP2011159943A (ja) * | 2010-01-08 | 2011-08-18 | Ricoh Co Ltd | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5699467B2 (ja) * | 2010-07-14 | 2015-04-08 | セイコーエプソン株式会社 | 光学モジュールおよび原子発振器 |
JP2013093439A (ja) * | 2011-10-26 | 2013-05-16 | Seiko Epson Corp | 面発光型半導体レーザーの製造方法 |
JP6303255B2 (ja) * | 2011-12-02 | 2018-04-04 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
JP6107089B2 (ja) * | 2012-11-30 | 2017-04-05 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
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2013
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EP2887467A2 (en) | 2015-06-24 |
US20150180204A1 (en) | 2015-06-25 |
EP2887467A3 (en) | 2015-09-02 |
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