JP6409351B2 - 物理量センサ - Google Patents

物理量センサ Download PDF

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Publication number
JP6409351B2
JP6409351B2 JP2014121690A JP2014121690A JP6409351B2 JP 6409351 B2 JP6409351 B2 JP 6409351B2 JP 2014121690 A JP2014121690 A JP 2014121690A JP 2014121690 A JP2014121690 A JP 2014121690A JP 6409351 B2 JP6409351 B2 JP 6409351B2
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JP
Japan
Prior art keywords
sensor
angular velocity
acceleration
velocity sensor
detection
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Application number
JP2014121690A
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English (en)
Japanese (ja)
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JP2016001158A5 (enExample
JP2016001158A (ja
Inventor
圭正 杉本
圭正 杉本
直記 吉田
直記 吉田
酒井 峰一
峰一 酒井
伸明 葛谷
伸明 葛谷
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Denso Corp
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Denso Corp
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Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2014121690A priority Critical patent/JP6409351B2/ja
Priority to PCT/JP2015/002919 priority patent/WO2015190104A1/ja
Priority to DE112015002785.8T priority patent/DE112015002785T5/de
Priority to US15/307,859 priority patent/US10393523B2/en
Publication of JP2016001158A publication Critical patent/JP2016001158A/ja
Publication of JP2016001158A5 publication Critical patent/JP2016001158A5/ja
Application granted granted Critical
Publication of JP6409351B2 publication Critical patent/JP6409351B2/ja
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5607Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5607Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
    • G01C19/5614Signal processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5607Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
    • G01C19/5628Manufacturing; Trimming; Mounting; Housings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C25/00Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00Testing or calibrating of apparatus or devices covered by the preceding groups
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Manufacturing & Machinery (AREA)
  • Signal Processing (AREA)
  • Gyroscopes (AREA)
  • Pressure Sensors (AREA)
JP2014121690A 2014-06-12 2014-06-12 物理量センサ Active JP6409351B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014121690A JP6409351B2 (ja) 2014-06-12 2014-06-12 物理量センサ
PCT/JP2015/002919 WO2015190104A1 (ja) 2014-06-12 2015-06-11 物理量センサ
DE112015002785.8T DE112015002785T5 (de) 2014-06-12 2015-06-11 Sensor für eine physikalische Grösse
US15/307,859 US10393523B2 (en) 2014-06-12 2015-06-11 Physical quantity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014121690A JP6409351B2 (ja) 2014-06-12 2014-06-12 物理量センサ

Publications (3)

Publication Number Publication Date
JP2016001158A JP2016001158A (ja) 2016-01-07
JP2016001158A5 JP2016001158A5 (enExample) 2016-06-16
JP6409351B2 true JP6409351B2 (ja) 2018-10-24

Family

ID=54833215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014121690A Active JP6409351B2 (ja) 2014-06-12 2014-06-12 物理量センサ

Country Status (4)

Country Link
US (1) US10393523B2 (enExample)
JP (1) JP6409351B2 (enExample)
DE (1) DE112015002785T5 (enExample)
WO (1) WO2015190104A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6586735B2 (ja) * 2015-02-20 2019-10-09 セイコーエプソン株式会社 回路装置、物理量検出装置、電子機器及び移動体
JP6492739B2 (ja) 2015-02-20 2019-04-03 セイコーエプソン株式会社 回路装置、物理量検出装置、電子機器及び移動体
KR102437764B1 (ko) 2017-12-20 2022-08-30 삼성전자주식회사 센서 패키지, 센서 패키지의 제조 방법, 및 리드 구조체의 제조 방법
JP6996344B2 (ja) * 2018-02-28 2022-01-17 セイコーエプソン株式会社 センサーデバイス、力検出装置およびロボット

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3123352B2 (ja) 1994-06-29 2001-01-09 株式会社デンソー 漏れ測定方法及びその装置
JPH10206273A (ja) * 1997-01-21 1998-08-07 Toyota Motor Corp 角速度センサの気密性確認方法及び装置
JPH1151802A (ja) * 1997-07-31 1999-02-26 River Eletec Kk 圧電素子用パッケージの気密検査方法
JP3435665B2 (ja) 2000-06-23 2003-08-11 株式会社村田製作所 複合センサ素子およびその製造方法
JP3512004B2 (ja) 2000-12-20 2004-03-29 トヨタ自動車株式会社 力学量検出装置
DE102004027501A1 (de) 2004-06-04 2005-12-22 Robert Bosch Gmbh Mikromechanisches Bauelement mit mehreren Kavernen und Herstellungsverfahren
JP2006010659A (ja) 2004-06-21 2006-01-12 Microstone Corp 振動ジャイロスコープ
JP4543869B2 (ja) 2004-10-15 2010-09-15 株式会社デンソー 振動型角速度センサにおけるセンサ回路
JP5222457B2 (ja) * 2005-09-26 2013-06-26 株式会社日立製作所 センサおよびセンサモジュール
DE102006016260B4 (de) 2006-04-06 2024-07-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vielfach-Bauelement mit mehreren aktive Strukturen enthaltenden Bauteilen (MEMS) zum späteren Vereinzeln, flächiges Substrat oder flächig ausgebildete Kappenstruktur, in der Mikrosystemtechnik einsetzbares Bauteil mit aktiven Strukturen, Einzelsubstrat oder Kappenstruktur mit aktiven Strukturen und Verfahren zum Herstellen eines Vielfach-Bauelements
US8646332B2 (en) 2007-09-03 2014-02-11 Panasonic Corporation Inertia force sensor
JP5319122B2 (ja) 2008-01-21 2013-10-16 日立オートモティブシステムズ株式会社 慣性センサ
US7800190B2 (en) * 2008-06-16 2010-09-21 Honeywell International Inc. Getter on die in an upper sense plate designed system
JP5321150B2 (ja) 2009-03-05 2013-10-23 セイコーエプソン株式会社 複合センサー
JP2010204061A (ja) * 2009-03-06 2010-09-16 Panasonic Corp 電子部品及びその製造方法
JP5316479B2 (ja) 2009-06-09 2013-10-16 株式会社デンソー 半導体力学量センサの製造方法及び半導体力学量センサ
JP5298047B2 (ja) * 2010-02-26 2013-09-25 日立オートモティブシステムズ株式会社 複合センサの製造方法
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WO2013080238A1 (ja) * 2011-11-28 2013-06-06 日立オートモティブシステムズ株式会社 複合センサおよびその製造方法
JP2013120179A (ja) * 2011-12-09 2013-06-17 Panasonic Corp 角速度センサ
JP6435631B2 (ja) 2014-04-23 2018-12-12 株式会社デンソー 角速度センサ

Also Published As

Publication number Publication date
US10393523B2 (en) 2019-08-27
WO2015190104A1 (ja) 2015-12-17
DE112015002785T5 (de) 2017-03-02
JP2016001158A (ja) 2016-01-07
US20170059320A1 (en) 2017-03-02

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