JP6397896B2 - Ｓｉ貫通電極露出処理の音響的なモニター及び制御のための装置及び方法 - Google Patents

Ｓｉ貫通電極露出処理の音響的なモニター及び制御のための装置及び方法 Download PDF

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Publication number
JP6397896B2
JP6397896B2 JP2016511785A JP2016511785A JP6397896B2 JP 6397896 B2 JP6397896 B2 JP 6397896B2 JP 2016511785 A JP2016511785 A JP 2016511785A JP 2016511785 A JP2016511785 A JP 2016511785A JP 6397896 B2 JP6397896 B2 JP 6397896B2
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Prior art keywords
tsv
acoustic
platen
cmp
substrate
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JP2016511785A
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Japanese (ja)
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JP2016517185A5 (enExample
JP2016517185A (ja
Inventor
シオン イエウ チュー，
シオン イエウ チュー，
コミセッティ スブラマニヤム，
コミセッティ スブラマニヤム，
ウダイ マハジャン，
ウダイ マハジャン，
ボグスロー エー． スウェデク，
ボグスロー エー． スウェデク，
ラジーブ バジャージ，
ラジーブ バジャージ，
チエンショー タン，
チエンショー タン，
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Applied Materials Inc
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0053—Control means for lapping machines or devices detecting loss or breakage of a workpiece during lapping

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2016511785A 2013-05-01 2014-04-28 Ｓｉ貫通電極露出処理の音響的なモニター及び制御のための装置及び方法 Active JP6397896B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/874,495 US20140329439A1 (en) 2013-05-01 2013-05-01 Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing
US13/874,495 2013-05-01
PCT/US2014/035756 WO2014179241A1 (en) 2013-05-01 2014-04-28 Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing

Publications (3)

Publication Number Publication Date
JP2016517185A JP2016517185A (ja) 2016-06-09
JP2016517185A5 JP2016517185A5 (enExample) 2017-06-15
JP6397896B2 true JP6397896B2 (ja) 2018-09-26

Family

ID=51841646

Family Applications (1)

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JP2016511785A Active JP6397896B2 (ja) 2013-05-01 2014-04-28 Ｓｉ貫通電極露出処理の音響的なモニター及び制御のための装置及び方法

Country Status (6)

Country Link
US (1) US20140329439A1 (enExample)
JP (1) JP6397896B2 (enExample)
KR (1) KR102242321B1 (enExample)
CN (1) CN105164794B (enExample)
TW (1) TWI686264B (enExample)
WO (1) WO2014179241A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9403254B2 (en) * 2011-08-17 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for real-time error detection in CMP processing
US10478937B2 (en) 2015-03-05 2019-11-19 Applied Materials, Inc. Acoustic emission monitoring and endpoint for chemical mechanical polishing
KR102333209B1 (ko) 2015-04-28 2021-12-01 삼성디스플레이 주식회사 기판 연마 장치
KR102401388B1 (ko) 2016-06-24 2022-05-24 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 슬러리 분배 디바이스
WO2018052816A1 (en) * 2016-09-15 2018-03-22 Applied Materials, Inc. Chemical mechanical polishing smart ring
US10695907B2 (en) * 2017-09-29 2020-06-30 Intel Corporation Methods and apparatus for monitoring robot health in manufacturing environments
US11565365B2 (en) * 2017-11-13 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for monitoring chemical mechanical polishing
CN108188931A (zh) * 2017-12-22 2018-06-22 华侨大学 双面行星磨削/研磨加工中工件破碎的在线控制系统
WO2019152222A1 (en) * 2018-02-05 2019-08-08 Applied Materials, Inc. Piezo-electric end-pointing for 3d printed cmp pads
JP7354131B2 (ja) 2018-03-13 2023-10-02 アプライド マテリアルズ インコーポレイテッド 化学機械研磨中の振動のモニタリング
JP7116645B2 (ja) * 2018-09-12 2022-08-10 キオクシア株式会社 研磨装置
JP7325913B2 (ja) * 2019-11-22 2023-08-15 株式会社ディスコ ウェーハ加工装置
US11289387B2 (en) * 2020-07-31 2022-03-29 Applied Materials, Inc. Methods and apparatus for backside via reveal processing
JP7682641B2 (ja) * 2021-02-22 2025-05-26 株式会社荏原製作所 基板処理装置
WO2022186992A1 (en) 2021-03-03 2022-09-09 Applied Materials, Inc. Acoustic monitoring and sensors for chemical mechanical polishing
KR20240025029A (ko) 2021-07-06 2024-02-26 어플라이드 머티어리얼스, 인코포레이티드 광 센서를 사용한 화학적 기계적 연마 진동 측정
CN117677465A (zh) * 2021-07-06 2024-03-08 应用材料公司 用于化学机械抛光的包含声学窗口的抛光垫
US12403561B2 (en) 2022-03-09 2025-09-02 Applied Materials, Inc. Eddy current monitoring to detect vibration in polishing
US12403560B2 (en) 2022-06-03 2025-09-02 Applied Materials, Inc. Determining substrate precession with acoustic signals

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2600001B1 (fr) * 1986-06-11 1988-09-09 Meseltron Sa Dispositif pour la commande de la vitesse d'avance d'un outil vers une piece a usiner
DE69632490T2 (de) * 1995-03-28 2005-05-12 Applied Materials, Inc., Santa Clara Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
JP2011249833A (ja) * 1995-03-28 2011-12-08 Applied Materials Inc Ｃｍｐプロセス中のインシチュウ終点検出に用いるポリッシングパッド
US6910942B1 (en) * 1997-06-05 2005-06-28 The Regents Of The University Of California Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus
JPH11183447A (ja) * 1997-12-19 1999-07-09 Nippei Toyama Corp 被加工材の割れ発生予知方法及びこれを利用したウエハの加工方法並びに研削盤
JPH11254311A (ja) * 1998-03-09 1999-09-21 Super Silicon Kenkyusho:Kk 研磨時の薄板状ワーク破損防止方法
JPH11254304A (ja) * 1998-03-10 1999-09-21 Super Silicon Kenkyusho:Kk センサを組み込んだ定盤
JP2000306963A (ja) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp 半導体装置及びその製造方法並びに半導体製造装置及び製造システム
JP3292243B2 (ja) * 1999-06-30 2002-06-17 日本電気株式会社 研磨終点検出装置
US6488569B1 (en) * 1999-07-23 2002-12-03 Florida State University Method and apparatus for detecting micro-scratches in semiconductor wafers during polishing process
US6924641B1 (en) * 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US8485862B2 (en) * 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US6485354B1 (en) * 2000-06-09 2002-11-26 Strasbaugh Polishing pad with built-in optical sensor
US6424137B1 (en) * 2000-09-18 2002-07-23 Stmicroelectronics, Inc. Use of acoustic spectral analysis for monitoring/control of CMP processes
US20020090889A1 (en) * 2001-01-10 2002-07-11 Crevasse Annette M. Apparatus and method of determining an endpoint during a chemical-mechanical polishing process
TW536454B (en) * 2001-02-14 2003-06-11 Taiwan Semiconductor Mfg Apparatus and method for detecting polishing endpoint of chemical-mechanical planarization/polishing of wafer
US6585562B2 (en) * 2001-05-17 2003-07-01 Nevmet Corporation Method and apparatus for polishing control with signal peak analysis
JP2003086551A (ja) * 2001-09-07 2003-03-20 Mitsubishi Electric Corp 半導体研磨装置、半導体研磨の終点検出方法および研磨ヘッドのドレスの終点検出方法
US6646737B2 (en) * 2001-09-24 2003-11-11 Kla-Tencor Technologies Submicron dimensional calibration standards and methods of manufacture and use
US6660539B1 (en) * 2001-11-07 2003-12-09 Advanced Micro Devices, Inc. Methods for dynamically controlling etch endpoint time, and system for accomplishing same
US6586337B2 (en) * 2001-11-09 2003-07-01 Speedfam-Ipec Corporation Method and apparatus for endpoint detection during chemical mechanical polishing
US6722946B2 (en) * 2002-01-17 2004-04-20 Nutool, Inc. Advanced chemical mechanical polishing system with smart endpoint detection
US6878039B2 (en) * 2002-01-28 2005-04-12 Speedfam-Ipec Corporation Polishing pad window for a chemical-mechanical polishing tool
US6808590B1 (en) * 2002-06-28 2004-10-26 Lam Research Corporation Method and apparatus of arrayed sensors for metrological control
US7011566B2 (en) * 2002-08-26 2006-03-14 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US6991514B1 (en) * 2003-02-21 2006-01-31 Verity Instruments, Inc. Optical closed-loop control system for a CMP apparatus and method of manufacture thereof
US7537511B2 (en) * 2006-03-14 2009-05-26 Micron Technology, Inc. Embedded fiber acoustic sensor for CMP process endpoint
JP2009536462A (ja) * 2006-05-03 2009-10-08 セント ローレンス ナノテクノロジー， インコーポレイテッド 個々のダイの研磨が可能な大型ウェハの化学機械研磨方法及び装置
US7887392B2 (en) * 2007-06-06 2011-02-15 Novellus Systems, Inc. Platen assembly and work piece carrier head employing flexible circuit sensor
US8106651B2 (en) * 2008-04-17 2012-01-31 Novellus Systems, Inc. Methods and apparatuses for determining thickness of a conductive layer
JP5481472B2 (ja) * 2008-05-08 2014-04-23 アプライド マテリアルズ インコーポレイテッド Ｃｍｐパッド厚みおよびプロファイル監視システム
JP5533666B2 (ja) * 2008-12-12 2014-06-25 旭硝子株式会社 研磨装置、及び研磨方法、並びにガラス板の製造方法
DE102009015718B4 (de) * 2009-03-31 2012-03-29 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Testsystem und Verfahren zum Verringern der Schäden in Saatschichten in Metallisierungssystemen von Halbleiterbauelementen

Also Published As

Publication number Publication date
KR102242321B1 (ko) 2021-04-21
CN105164794B (zh) 2019-01-11
TW201503995A (zh) 2015-02-01
US20140329439A1 (en) 2014-11-06
CN105164794A (zh) 2015-12-16
JP2016517185A (ja) 2016-06-09
WO2014179241A1 (en) 2014-11-06
KR20160003247A (ko) 2016-01-08
TWI686264B (zh) 2020-03-01

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