JP6388291B2 - 有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子 - Google Patents
有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子 Download PDFInfo
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/38—Transmitter circuitry for the transmission of television signals according to analogue transmission standards
- H04N5/40—Modulation circuits
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N7/00—Television systems
- H04N7/015—High-definition television systems
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Description
以下に、本発明の実施の形態1について、図面を参照しながら説明する。
次に、実施の形態2について説明する。本実施の形態では、有機EL素子に照射されるレーザーの照射領域が実施の形態1と異なる。
次に、本発明の実施の形態3について説明する。本実施の形態が上述した実施の形態1と異なる点は、陽極と陰極が導電性異物を介さずに直接接触して短絡した有機EL素子において、短絡した部分のリペアを行う点である。
本発明のその他の実施の形態について説明する。上述した実施の形態は、陽極11と陰極16が完全に導通している場合だけではなく、陽極11と陰極16が完全に導通してはいないものの、他の部分と比べて陽極11と陰極16間の抵抗が小さい場合にも適用できる。
2、102 画素
11、111 陽極(下部電極)
12、112 正孔注入層(有機層)
13、113 発光層(有機層)
15、115 電子注入層(有機層)
16、116 陰極(上部電極)
16a、116a ITO層(透明導電性材料層)
16b、116b 金属層
16c、16d、116c 陰極の一部
20 異物
25、125 レーザー
30、130 有機層
120 短絡部分
200 薄型フラットテレビシステム
Claims (14)
- 下部電極、発光層を含む有機層および上部電極を備え、前記下部電極および前記上部電極の少なくとも一方は透明導電性材料層および前記透明導電性材料層より屈折率の高い金属層で構成され、前記下部電極と前記上部電極とが短絡している部分を有する有機エレクトロルミネッセンス(EL)素子を準備する第1の工程と、
前記下部電極と前記上部電極とが短絡している部分および当該部分の周囲のうち少なくとも一方の前記透明導電性材料層および前記金属層にフェムト秒レーザーを照射し、前記透明導電性材料層および前記金属層の組織構造を、多数の粒子が粒子間に空隙を残存させつつ集合した粒状の組織構造に変化させて高抵抗化する第2の工程と、
を含む有機EL素子の製造方法。 - 前記金属層は、銀で構成されている、
請求項1に記載の有機EL素子の製造方法。 - 前記金属層は、マグネシウムで構成されている、
請求項1に記載の有機EL素子の製造方法。 - 前記透明導電性材料層は、透明金属酸化物で構成されている、
請求項1〜3のいずれか1項に記載の有機EL素子の製造方法。 - 前記短絡している部分は、前記有機層に導電性の異物を含んでいる、
請求項1〜4のいずれか1項に記載の有機EL素子の製造方法。 - 前記導電性の異物を検出する工程をさらに含み、
前記導電性の異物の周囲の前記透明導電性材料層および前記金属層に前記フェムト秒レーザーを照射する、
請求項5に記載の有機EL素子の製造方法。 - 前記短絡している部分の前記有機層の膜厚は、前記短絡している部分以外の前記有機層の膜厚より薄い、
請求項1〜4のいずれか1項に記載の有機EL素子の製造方法。 - 下部電極、発光層を含む有機層および上部電極を備えた有機EL素子であって、
前記下部電極および前記上部電極の少なくとも一方は、透明導電性材料層および前記透明導電性材料層より屈折率の高い金属層で構成され、
前記透明導電性材料層および前記金属層の一部分は、レーザー照射により、多数の粒子が粒子間に空隙を残存させつつ集合した粒状の組織構造に変化されることにより高抵抗化されている、
有機EL素子。 - 前記金属層は、銀で構成されている、
請求項8に記載の有機EL素子。 - 前記金属層は、マグネシウムで構成されている、
請求項8に記載の有機EL素子。 - 前記透明導電性材料層および前記金属層の一部分の近傍には、導電性の異物が存在する、
請求項8に記載の有機EL素子。 - 前記粒状の組織構造には、前記金属層を構成する金属の原子が混在している、
請求項8に記載の有機EL素子。 - 前記粒状の組織構造を構成する粒の粒径は、10nm以上500nm以下である、
請求項8に記載の有機EL素子。 - 前記高抵抗化された部分の抵抗値は、40MΩである、
請求項8に記載の有機EL素子。
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PCT/JP2015/005634 WO2016079957A1 (ja) | 2014-11-17 | 2015-11-11 | 有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子 |
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US20190357335A1 (en) * | 2017-05-24 | 2019-11-21 | Sharp Kabushiki Kaisha | Display device, manufacturing apparatus, and defect correction apparatus |
KR20210114080A (ko) * | 2020-03-09 | 2021-09-23 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 리페어 방법 |
JP2022076273A (ja) * | 2020-11-09 | 2022-05-19 | 株式会社Joled | 自発光型表示パネル、及び自発光型表示パネルの製造方法 |
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EP1076368A2 (en) * | 1999-08-11 | 2001-02-14 | Eastman Kodak Company | A surface-emitting organic light-emitting diode |
US6909111B2 (en) * | 2000-12-28 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device and thin film forming apparatus |
JP2002208479A (ja) * | 2001-01-05 | 2002-07-26 | Toppan Printing Co Ltd | 有機led素子用中間抵抗膜付基板および有機led素子 |
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JP2008235177A (ja) * | 2007-03-23 | 2008-10-02 | Sharp Corp | 有機elディスプレイの製造方法及び有機elディスプレイ |
JP5760009B2 (ja) * | 2010-12-01 | 2015-08-05 | 株式会社Joled | 有機エレクトロルミネッセンス素子の製造方法 |
JP2012174334A (ja) * | 2011-02-17 | 2012-09-10 | Dainippon Printing Co Ltd | 有機elパネル及びその製造方法 |
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JP5963343B2 (ja) * | 2011-11-24 | 2016-08-03 | 株式会社Joled | 有機el素子の製造方法 |
JP2015109136A (ja) * | 2012-03-14 | 2015-06-11 | 旭硝子株式会社 | 有機led素子、透光性基板、および透光性基板の製造方法 |
JP6057143B2 (ja) * | 2012-03-19 | 2017-01-11 | 株式会社Joled | 有機エレクトロルミネッセンス素子 |
JP6056082B2 (ja) * | 2013-10-30 | 2017-01-11 | 株式会社Joled | 表示装置および電子機器 |
-
2015
- 2015-11-11 JP JP2016559807A patent/JP6388291B2/ja active Active
- 2015-11-11 US US15/527,491 patent/US20170331041A1/en not_active Abandoned
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