JP5654037B2 - 有機el素子の製造方法及び評価方法 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Description
<素子構造>
図1は、本発明の実施の形態1に係る有機EL素子1の断面概略図である。図1に示した有機EL素子1は、陽極、陰極、および当該両極で挟まれた発光層を含む有機層を有する有機機能デバイスである。
次に、有機EL素子1の製造方法について説明する。この製造方法には、有機EL素子1の欠陥部に起因する不良を解消する工程が含まれる。
2 発光領域
9 透明ガラス
10 平坦化膜
11 陽極
12 正孔注入層
13 発光層
14 隔壁
15 電子注入層
16 陰極
16a 照射痕
17 薄膜封止層
18 透明ガラス
19 封止用樹脂層
20 異物
30 有機層
101 レーザー発振器
103 CCDカメラ
104 照明
105 ステージ
Claims (4)
- 欠陥部を有する有機EL素子にレーザー光を照射する第1のレーザー照射工程と、
前記レーザー光の照射後、前記有機EL素子に、前記有機EL素子が正常であれば基準階調未満の第1階調に対応する輝度で発光することが期待される第1量の電流を供給しつつ、前記有機EL素子の発光輝度を測定する第1輝度測定工程と、
前記第1輝度測定工程において測定された発光輝度が判定しきい値未満である場合に、前記有機EL素子に前記レーザー光を再度照射する第2のレーザー照射工程と、
前記第1輝度測定工程において測定された発光輝度が前記判定しきい値以上である場合に、前記有機EL素子に、前記有機EL素子が正常であれば前記基準階調以上の第2階調に対応する輝度で発光することが期待される第2量の電流を供給しつつ、前記有機EL素子の発光輝度を測定する第2輝度測定工程と、
を含む有機EL素子の製造方法。 - 前記発光輝度の判定しきい値は、前記有機EL素子が正常な場合に前記第1階調に対応する輝度の50%である、
請求項1に記載の有機EL素子の製造方法。 - 前記第1階調は、前記有機EL素子が正常な場合に発光輝度1cd/m2に対応する階調である、
請求項1に記載の有機EL素子の製造方法。 - 前記第2階調は、前記有機EL素子の最高階調付近の階調である、
請求項1に記載の有機EL素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/005226 WO2013038454A1 (ja) | 2011-09-15 | 2011-09-15 | 有機el素子の製造方法及び評価方法 |
Publications (2)
Publication Number | Publication Date |
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JP5654037B2 true JP5654037B2 (ja) | 2015-01-14 |
JPWO2013038454A1 JPWO2013038454A1 (ja) | 2015-03-23 |
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JP2012541666A Active JP5654037B2 (ja) | 2011-09-15 | 2011-09-15 | 有機el素子の製造方法及び評価方法 |
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Country | Link |
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US (1) | US8765494B2 (ja) |
JP (1) | JP5654037B2 (ja) |
WO (1) | WO2013038454A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5760009B2 (ja) | 2010-12-01 | 2015-08-05 | 株式会社Joled | 有機エレクトロルミネッセンス素子の製造方法 |
JP5654037B2 (ja) * | 2011-09-15 | 2015-01-14 | パナソニック株式会社 | 有機el素子の製造方法及び評価方法 |
JP6142212B2 (ja) * | 2012-06-14 | 2017-06-07 | 株式会社Joled | 欠陥検出方法、有機el素子のリペア方法、および有機el表示パネル |
WO2014188695A1 (ja) | 2013-05-23 | 2014-11-27 | パナソニック株式会社 | 有機エレクトロルミネッセンス表示装置の製造方法および有機エレクトロルミネッセンス表示装置 |
US9882175B2 (en) | 2014-06-12 | 2018-01-30 | Joled Inc. | Method for manufacturing display panel |
JP2016099505A (ja) | 2014-11-21 | 2016-05-30 | 株式会社Joled | 表示装置 |
US10678076B2 (en) * | 2017-01-30 | 2020-06-09 | Facebook Technologies, Llc | Treating display panel using laser |
JP2022076273A (ja) * | 2020-11-09 | 2022-05-19 | 株式会社Joled | 自発光型表示パネル、及び自発光型表示パネルの製造方法 |
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JPH02152192A (ja) * | 1988-12-01 | 1990-06-12 | Matsushita Electric Ind Co Ltd | 多色薄膜el素子の製造方法 |
JP2004227852A (ja) * | 2003-01-21 | 2004-08-12 | Sanyo Electric Co Ltd | El表示装置のレーザーリペア方法 |
JP2007042498A (ja) * | 2005-08-04 | 2007-02-15 | Aitesu:Kk | 有機elレーザリペア方法及びレーザリペア装置 |
JP2008034264A (ja) * | 2006-07-28 | 2008-02-14 | Toshiba Matsushita Display Technology Co Ltd | El表示装置のレーザリペア方法、el表示装置のレーザリペア装置、プログラム、および記録媒体 |
WO2010122782A1 (ja) * | 2009-04-24 | 2010-10-28 | パナソニック株式会社 | 有機elディスプレイおよびその製造方法 |
JP2011090889A (ja) * | 2009-10-22 | 2011-05-06 | Panasonic Corp | 有機el表示装置の製造方法、その検査装置及び検査方法 |
JP2011134490A (ja) * | 2009-12-22 | 2011-07-07 | Hitachi High-Technologies Corp | 有機elディスプレイパネル修正設備及び修正方法 |
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TWI223569B (en) | 2002-03-20 | 2004-11-01 | Sanyo Electric Co | Method for reducing light quantity of organic EL panel and organic EL panel |
JP2005276600A (ja) | 2004-03-24 | 2005-10-06 | Hitachi Ltd | 有機エレクトロルミネセンス表示装置の製造方法 |
JP2006323032A (ja) | 2005-05-17 | 2006-11-30 | Sony Corp | フラットパネルディスプレイディバイスの欠陥画素リペア装置及びその欠陥画素リペア方法 |
US7838858B2 (en) * | 2005-05-31 | 2010-11-23 | Nikon Corporation | Evaluation system and method of a search operation that detects a detection subject on an object |
JP5154033B2 (ja) * | 2005-06-07 | 2013-02-27 | 三星電子株式会社 | 表示装置 |
US8197334B2 (en) * | 2007-10-29 | 2012-06-12 | Igt | Circulating data card apparatus and management system |
US9341896B2 (en) * | 2008-01-21 | 2016-05-17 | Samsung Display Co., Ltd. | Liquid crystal display |
TWI723953B (zh) * | 2008-03-05 | 2021-04-11 | 美國伊利諾大學理事會 | 可延展且可折疊的電子裝置 |
US8531477B2 (en) * | 2010-09-07 | 2013-09-10 | ARMSTEL Holding, LLC | Devices and methods for providing an enhanced monochromatic display |
WO2012140691A1 (ja) | 2011-04-12 | 2012-10-18 | パナソニック株式会社 | 有機el素子の製造方法及びレーザー焦点位置設定方法 |
JP5654037B2 (ja) * | 2011-09-15 | 2015-01-14 | パナソニック株式会社 | 有機el素子の製造方法及び評価方法 |
-
2011
- 2011-09-15 JP JP2012541666A patent/JP5654037B2/ja active Active
- 2011-09-15 WO PCT/JP2011/005226 patent/WO2013038454A1/ja active Application Filing
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2012
- 2012-12-04 US US13/693,335 patent/US8765494B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02152192A (ja) * | 1988-12-01 | 1990-06-12 | Matsushita Electric Ind Co Ltd | 多色薄膜el素子の製造方法 |
JP2004227852A (ja) * | 2003-01-21 | 2004-08-12 | Sanyo Electric Co Ltd | El表示装置のレーザーリペア方法 |
JP2007042498A (ja) * | 2005-08-04 | 2007-02-15 | Aitesu:Kk | 有機elレーザリペア方法及びレーザリペア装置 |
JP2008034264A (ja) * | 2006-07-28 | 2008-02-14 | Toshiba Matsushita Display Technology Co Ltd | El表示装置のレーザリペア方法、el表示装置のレーザリペア装置、プログラム、および記録媒体 |
WO2010122782A1 (ja) * | 2009-04-24 | 2010-10-28 | パナソニック株式会社 | 有機elディスプレイおよびその製造方法 |
JP2011090889A (ja) * | 2009-10-22 | 2011-05-06 | Panasonic Corp | 有機el表示装置の製造方法、その検査装置及び検査方法 |
JP2011134490A (ja) * | 2009-12-22 | 2011-07-07 | Hitachi High-Technologies Corp | 有機elディスプレイパネル修正設備及び修正方法 |
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JPWO2013038454A1 (ja) | 2015-03-23 |
US20130102094A1 (en) | 2013-04-25 |
US8765494B2 (en) | 2014-07-01 |
WO2013038454A1 (ja) | 2013-03-21 |
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