JP6383647B2 - 測定システムおよび測定方法 - Google Patents

測定システムおよび測定方法 Download PDF

Info

Publication number
JP6383647B2
JP6383647B2 JP2014234724A JP2014234724A JP6383647B2 JP 6383647 B2 JP6383647 B2 JP 6383647B2 JP 2014234724 A JP2014234724 A JP 2014234724A JP 2014234724 A JP2014234724 A JP 2014234724A JP 6383647 B2 JP6383647 B2 JP 6383647B2
Authority
JP
Japan
Prior art keywords
focus ring
sensor
distance
substrate
distance sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014234724A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016100407A (ja
JP2016100407A5 (enExample
Inventor
紘司 鎌田
紘司 鎌田
猪狩　浩
浩 猪狩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014234724A priority Critical patent/JP6383647B2/ja
Priority to US14/941,925 priority patent/US10186402B2/en
Priority to TW104137809A priority patent/TWI677007B/zh
Priority to KR1020150161485A priority patent/KR102422345B1/ko
Publication of JP2016100407A publication Critical patent/JP2016100407A/ja
Publication of JP2016100407A5 publication Critical patent/JP2016100407A5/ja
Application granted granted Critical
Publication of JP6383647B2 publication Critical patent/JP6383647B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/023—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring distance between sensor and object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/08—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
JP2014234724A 2014-11-19 2014-11-19 測定システムおよび測定方法 Active JP6383647B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014234724A JP6383647B2 (ja) 2014-11-19 2014-11-19 測定システムおよび測定方法
US14/941,925 US10186402B2 (en) 2014-11-19 2015-11-16 Measurement system and measurement method
TW104137809A TWI677007B (zh) 2014-11-19 2015-11-17 測定系統及測定方法
KR1020150161485A KR102422345B1 (ko) 2014-11-19 2015-11-18 측정 시스템 및 측정 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014234724A JP6383647B2 (ja) 2014-11-19 2014-11-19 測定システムおよび測定方法

Publications (3)

Publication Number Publication Date
JP2016100407A JP2016100407A (ja) 2016-05-30
JP2016100407A5 JP2016100407A5 (enExample) 2017-09-21
JP6383647B2 true JP6383647B2 (ja) 2018-08-29

Family

ID=55962329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014234724A Active JP6383647B2 (ja) 2014-11-19 2014-11-19 測定システムおよび測定方法

Country Status (4)

Country Link
US (1) US10186402B2 (enExample)
JP (1) JP6383647B2 (enExample)
KR (1) KR102422345B1 (enExample)
TW (1) TWI677007B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230199992A1 (en) * 2020-06-02 2023-06-22 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9924984B2 (en) 2013-12-20 2018-03-27 Crossroads Extremity Systems, Llc Polyaxial locking hole
US11202626B2 (en) 2014-07-10 2021-12-21 Crossroads Extremity Systems, Llc Bone implant with means for multi directional force and means of insertion
US10014198B2 (en) * 2015-08-21 2018-07-03 Lam Research Corporation Wear detection of consumable part in semiconductor manufacturing equipment
JP6651994B2 (ja) * 2016-06-17 2020-02-19 東京エレクトロン株式会社 基板処理装置、メンテナンス用治具、基板処理装置のメンテナンス方法及び記憶媒体
JP6635888B2 (ja) * 2016-07-14 2020-01-29 東京エレクトロン株式会社 プラズマ処理システム
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
EP3315948B1 (de) * 2016-10-26 2019-09-04 Heraeus Quarzglas GmbH & Co. KG Verfahren zur ermittlung des brechzahlprofils eines zylinderförmigen optischen gegenstandes
US11864753B2 (en) 2017-02-06 2024-01-09 Crossroads Extremity Systems, Llc Implant inserter
EP3579762B1 (en) 2017-02-07 2024-06-26 Crossroads Extremity Systems, LLC Counter-torque implant
JP6797079B2 (ja) * 2017-06-06 2020-12-09 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
US10978333B2 (en) * 2017-11-14 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for robotic arm sensing
KR20240122603A (ko) * 2017-12-05 2024-08-12 램 리써치 코포레이션 에지 링 마모 보상 (wear compensation) 을 위한 시스템 및 방법
JP7029983B2 (ja) * 2018-03-09 2022-03-04 東京エレクトロン株式会社 測定器及び測定器のずれ量を求める方法
US11935773B2 (en) * 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US10794681B2 (en) 2018-09-04 2020-10-06 Applied Materials, Inc. Long range capacitive gap measurement in a wafer form sensor system
US11342210B2 (en) 2018-09-04 2022-05-24 Applied Materials, Inc. Method and apparatus for measuring wafer movement and placement using vibration data
US11521872B2 (en) 2018-09-04 2022-12-06 Applied Materials, Inc. Method and apparatus for measuring erosion and calibrating position for a moving process kit
US11404296B2 (en) * 2018-09-04 2022-08-02 Applied Materials, Inc. Method and apparatus for measuring placement of a substrate on a heater pedestal
US10847393B2 (en) 2018-09-04 2020-11-24 Applied Materials, Inc. Method and apparatus for measuring process kit centering
JP7076351B2 (ja) * 2018-10-03 2022-05-27 東京エレクトロン株式会社 プラズマ処理装置、及びリング部材の厚さ測定方法
JP7129325B2 (ja) * 2018-12-14 2022-09-01 東京エレクトロン株式会社 搬送方法及び搬送システム
US11408734B2 (en) * 2019-01-03 2022-08-09 Lam Research Corporation Distance measurement between gas distribution device and substrate support at high temperatures
US11697213B2 (en) * 2019-02-14 2023-07-11 Persimmon Technologies Corporation Radar based position measurement for robot systems
US11393663B2 (en) * 2019-02-25 2022-07-19 Tokyo Electron Limited Methods and systems for focus ring thickness determinations and feedback control
KR20210126783A (ko) * 2019-03-06 2021-10-20 램 리써치 코포레이션 기판 프로세싱 시스템을 위한 조정가능한 에지 링의 두께를 측정하기 위한 측정 시스템
KR102147775B1 (ko) * 2019-03-11 2020-08-25 (주)드림솔 에지링 측정 장치
US11913777B2 (en) * 2019-06-11 2024-02-27 Applied Materials, Inc. Detector for process kit ring wear
KR102689653B1 (ko) * 2019-06-26 2024-07-31 삼성전자주식회사 센서 모듈 및 이를 구비하는 식각 장치
US12341040B2 (en) 2019-07-26 2025-06-24 Lam Research Corporation Integrated adaptive positioning systems and routines for automated wafer-handling robot teach and health check
TWI730486B (zh) 2019-11-01 2021-06-11 財團法人工業技術研究院 流場可視化觀測裝置與流場可視化觀測方法
US12215966B2 (en) * 2019-12-06 2025-02-04 Applied Materials, Inc. Methods and systems of optical inspection of electronic device manufacturing machines
US11668553B2 (en) * 2020-02-14 2023-06-06 Applied Materials Inc. Apparatus and method for controlling edge ring variation
US11924972B2 (en) 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US12059183B2 (en) 2020-07-31 2024-08-13 Crossroads Extremity Systems, Llc Bone plates with dynamic elements and screws
JP7507639B2 (ja) 2020-09-02 2024-06-28 東京エレクトロン株式会社 基板処理システム及び状態監視方法
CN114496689B (zh) * 2020-11-11 2024-05-28 中国科学院微电子研究所 一种顶环被蚀刻量检测系统及方法、检测调整系统及方法
USD961081S1 (en) 2020-11-18 2022-08-16 Crossroads Extremity Systems, Llc Orthopedic implant
KR102867342B1 (ko) 2020-11-26 2025-10-01 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법
CN114639582B (zh) * 2020-12-15 2025-02-14 中微半导体设备(上海)股份有限公司 一种边缘环高度测量装置及方法
EP4024034B1 (en) * 2021-01-05 2025-05-28 The Boeing Company Methods and apparatus for measuring fastener concentricity
JP7653794B2 (ja) 2021-01-29 2025-03-31 東京エレクトロン株式会社 基板処理システム及び状態監視方法
US11788927B2 (en) 2021-02-26 2023-10-17 Heraeus Quartz North America Llc Evaluation of preforms with non-step-index refractive-index-profile (RIP)
JP7650685B2 (ja) * 2021-03-11 2025-03-25 三菱重工業株式会社 クリアランスセンサ
JP7616941B2 (ja) * 2021-05-11 2025-01-17 東京エレクトロン株式会社 基板処理システム及び環状部材の高さ推定方法
KR20240051153A (ko) * 2021-08-17 2024-04-19 도쿄엘렉트론가부시키가이샤 반도체 플라즈마 공정 챔버 내의 소모성 부품의 특성을 측정하기 위한 광센서
KR20240072245A (ko) 2021-12-31 2024-05-23 인투코어테크놀로지 주식회사 멀티 스테이션에 대한 플라즈마 공정 시스템
WO2024023898A1 (ja) * 2022-07-25 2024-02-01 三菱電機株式会社 プラズマ処理装置および劣化判定方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5194743A (en) * 1990-04-06 1993-03-16 Nikon Corporation Device for positioning circular semiconductor wafers
WO1998053484A1 (en) * 1997-05-20 1998-11-26 Tokyo Electron Limited Processing apparatus
WO2000068986A1 (fr) * 1999-05-07 2000-11-16 Tokyo Electron Limited Procédé et appareil de traitement sous vide
JP2001230239A (ja) * 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
JP4554037B2 (ja) * 2000-07-04 2010-09-29 東京エレクトロン株式会社 消耗品の消耗度予測方法及び堆積膜厚の予測方法
US7135852B2 (en) * 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
JP4421305B2 (ja) * 2003-01-07 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US20060043063A1 (en) * 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
JP2006173223A (ja) 2004-12-14 2006-06-29 Toshiba Corp プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP2006196716A (ja) * 2005-01-14 2006-07-27 Matsushita Electric Ind Co Ltd 半導体製造装置および半導体装置の製造方法
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
US7477960B2 (en) * 2005-02-16 2009-01-13 Tokyo Electron Limited Fault detection and classification (FDC) using a run-to-run controller
EP1780499A1 (de) * 2005-10-28 2007-05-02 Hch. Kündig & Cie. AG Verfahren zum Messen der Dicke von Mehrschichtfolien
US20070169700A1 (en) * 2006-01-26 2007-07-26 Gert-Jan Sniders Sensing system and method for determining the alignment of a substrate holder in a batch reactor
US20080066868A1 (en) * 2006-09-19 2008-03-20 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
JP4956328B2 (ja) * 2007-08-24 2012-06-20 東京エレクトロン株式会社 搬送アームの移動位置の調整方法及び位置検出用治具
JP2010034416A (ja) 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5595795B2 (ja) * 2009-06-12 2014-09-24 東京エレクトロン株式会社 プラズマ処理装置用の消耗部品の再利用方法
JP2011210853A (ja) * 2010-03-29 2011-10-20 Tokyo Electron Ltd 消耗量測定方法
KR101899784B1 (ko) * 2011-09-01 2018-09-21 세메스 주식회사 공정 챔버 모니터링 장치 및 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230199992A1 (en) * 2020-06-02 2023-06-22 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source

Also Published As

Publication number Publication date
JP2016100407A (ja) 2016-05-30
KR102422345B1 (ko) 2022-07-18
US20160141154A1 (en) 2016-05-19
TWI677007B (zh) 2019-11-11
KR20160059976A (ko) 2016-05-27
TW201633360A (zh) 2016-09-16
US10186402B2 (en) 2019-01-22

Similar Documents

Publication Publication Date Title
JP6383647B2 (ja) 測定システムおよび測定方法
US20240103482A1 (en) Temperature control method
US20230282460A1 (en) Focus ring replacement method and plasma processing system
JP5188385B2 (ja) プラズマ処理装置及びプラズマ処理装置の運転方法
JP5709505B2 (ja) プラズマ処理装置、プラズマ処理方法、および記憶媒体
US9530657B2 (en) Method of processing substrate and substrate processing apparatus
TWI772356B (zh) 基板處理裝置、溫度控制方法及溫度控制程式
JP2019176031A (ja) プラズマ処理装置、及び被処理体の搬送方法
JP2016201394A (ja) 温度制御装置、温度制御方法およびプログラム
KR20140092257A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
US20240290591A1 (en) Measuring device, measuring method, and vacuum processing apparatus
JP2012104579A (ja) プラズマ処理装置
JP2020057712A (ja) プラズマ処理装置、及びリング部材の厚さ測定方法
JP7106358B2 (ja) プラズマ処理装置及び温度制御方法
JP4777790B2 (ja) プラズマ処理室用構造物、プラズマ処理室、及びプラズマ処理装置
JP2014187231A (ja) プラズマエッチング方法及びプラズマエッチング装置
JP2021012985A (ja) 処理方法、載置台、プラズマ処理装置、およびプログラム
JP2012049306A (ja) プラズマ処理装置
JP2009212178A (ja) プラズマ処理装置及びプラズマ処理方法
US12488968B2 (en) Semiconductor processing tool and methods of operation
JP7214021B2 (ja) プラズマ処理装置、及び被処理体の搬送方法
JP2007243020A (ja) プラズマ処理装置
JP2016086040A (ja) 半導体製造装置の出力検査方法及び半導体製造装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170809

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170809

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180529

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180710

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180724

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180806

R150 Certificate of patent or registration of utility model

Ref document number: 6383647

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250