JP6380483B2 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
JP6380483B2
JP6380483B2 JP2016158011A JP2016158011A JP6380483B2 JP 6380483 B2 JP6380483 B2 JP 6380483B2 JP 2016158011 A JP2016158011 A JP 2016158011A JP 2016158011 A JP2016158011 A JP 2016158011A JP 6380483 B2 JP6380483 B2 JP 6380483B2
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JP
Japan
Prior art keywords
electrode
evaporation source
thermal expansion
forming apparatus
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016158011A
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English (en)
Japanese (ja)
Other versions
JP2018024917A (ja
Inventor
祥太 松田
祥太 松田
中田　博道
博道 中田
貴康 佐藤
貴康 佐藤
羊治 佐藤
羊治 佐藤
和孝 橘
和孝 橘
大樹 坪井
大樹 坪井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP2016158011A priority Critical patent/JP6380483B2/ja
Priority to US15/653,698 priority patent/US10378097B2/en
Priority to CN201710666073.8A priority patent/CN107723668B/zh
Priority to DE102017213793.2A priority patent/DE102017213793B4/de
Publication of JP2018024917A publication Critical patent/JP2018024917A/ja
Application granted granted Critical
Publication of JP6380483B2 publication Critical patent/JP6380483B2/ja
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Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2016158011A 2016-08-10 2016-08-10 成膜装置 Active JP6380483B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016158011A JP6380483B2 (ja) 2016-08-10 2016-08-10 成膜装置
US15/653,698 US10378097B2 (en) 2016-08-10 2017-07-19 Film forming apparatus
CN201710666073.8A CN107723668B (zh) 2016-08-10 2017-08-07 成膜装置
DE102017213793.2A DE102017213793B4 (de) 2016-08-10 2017-08-08 Film-bildende Vorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016158011A JP6380483B2 (ja) 2016-08-10 2016-08-10 成膜装置

Publications (2)

Publication Number Publication Date
JP2018024917A JP2018024917A (ja) 2018-02-15
JP6380483B2 true JP6380483B2 (ja) 2018-08-29

Family

ID=61018231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016158011A Active JP6380483B2 (ja) 2016-08-10 2016-08-10 成膜装置

Country Status (4)

Country Link
US (1) US10378097B2 (zh)
JP (1) JP6380483B2 (zh)
CN (1) CN107723668B (zh)
DE (1) DE102017213793B4 (zh)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354863A (ja) 1991-05-29 1992-12-09 Kobe Steel Ltd 真空アーク蒸発源
EP0516425B1 (en) 1991-05-29 1998-08-26 KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. Cathodic arc deposition system and a method of controlling same
JPH11100665A (ja) 1997-07-31 1999-04-13 Nippon Foundry Kk スパッタリング装置
DE19827461A1 (de) 1998-06-19 1999-12-23 Leybold Systems Gmbh Vorrichtung zum Beschichten von Substraten in einer Vakuumkammer
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
DE10018143C5 (de) 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
JP3822778B2 (ja) 2000-06-13 2006-09-20 日本真空光学株式会社 高周波イオンプレーティング装置
JP4171452B2 (ja) * 2004-10-18 2008-10-22 三菱重工食品包装機械株式会社 バリア膜形成用内部電極及び成膜装置
JP4693002B2 (ja) 2005-10-17 2011-06-01 株式会社神戸製鋼所 アークイオンプレーティング装置
US20070240982A1 (en) 2005-10-17 2007-10-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Arc ion plating apparatus
US20080006523A1 (en) 2006-06-26 2008-01-10 Akihiro Hosokawa Cooled pvd shield
CN200992572Y (zh) * 2006-10-25 2007-12-19 杭州金高照明电器有限公司 真空桶式镀膜机
JP2009228076A (ja) * 2008-03-24 2009-10-08 Mitsubishi Chemicals Corp 蒸着装置、及び金属蒸着物の製造方法
CN102668016B (zh) * 2009-10-27 2016-02-24 安格斯公司 离子注入系统及方法
EP2437280A1 (en) 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
JP5668637B2 (ja) 2011-08-10 2015-02-12 トヨタ自動車株式会社 成膜装置及び成膜方法
CN103132014A (zh) 2011-12-01 2013-06-05 深圳富泰宏精密工业有限公司 镀膜件及其制备方法
US9640359B2 (en) 2012-08-09 2017-05-02 Vactronix Scientific, Inc. Inverted cylindrical magnetron (ICM) system and methods of use
JP2015040313A (ja) 2013-08-20 2015-03-02 トヨタ自動車株式会社 成膜装置
JP6044602B2 (ja) 2014-07-11 2016-12-14 トヨタ自動車株式会社 成膜装置

Also Published As

Publication number Publication date
US20180044777A1 (en) 2018-02-15
US10378097B2 (en) 2019-08-13
DE102017213793B4 (de) 2020-12-31
JP2018024917A (ja) 2018-02-15
CN107723668A (zh) 2018-02-23
DE102017213793A1 (de) 2018-02-15
CN107723668B (zh) 2019-08-06

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