JP6362095B2 - 照明装置、露光装置、調整方法、及び、物品の製造方法 - Google Patents

照明装置、露光装置、調整方法、及び、物品の製造方法 Download PDF

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Publication number
JP6362095B2
JP6362095B2 JP2014124752A JP2014124752A JP6362095B2 JP 6362095 B2 JP6362095 B2 JP 6362095B2 JP 2014124752 A JP2014124752 A JP 2014124752A JP 2014124752 A JP2014124752 A JP 2014124752A JP 6362095 B2 JP6362095 B2 JP 6362095B2
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JP
Japan
Prior art keywords
light
light source
shadow
optical system
intensity distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014124752A
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English (en)
Japanese (ja)
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JP2016004921A5 (enExample
JP2016004921A (ja
Inventor
義邦 米山
義邦 米山
健太郎 昼間
健太郎 昼間
昇 大阪
昇 大阪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014124752A priority Critical patent/JP6362095B2/ja
Priority to TW104118491A priority patent/TWI587097B/zh
Priority to US14/740,071 priority patent/US9632423B2/en
Priority to KR1020150084943A priority patent/KR101850584B1/ko
Priority to CN201510336459.3A priority patent/CN105278258B/zh
Publication of JP2016004921A publication Critical patent/JP2016004921A/ja
Publication of JP2016004921A5 publication Critical patent/JP2016004921A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014124752A 2014-06-17 2014-06-17 照明装置、露光装置、調整方法、及び、物品の製造方法 Expired - Fee Related JP6362095B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014124752A JP6362095B2 (ja) 2014-06-17 2014-06-17 照明装置、露光装置、調整方法、及び、物品の製造方法
TW104118491A TWI587097B (zh) 2014-06-17 2015-06-08 照明裝置、曝光設備、調整方法及製造物品的方法
US14/740,071 US9632423B2 (en) 2014-06-17 2015-06-15 Illumination device, exposure apparatus, adjusting method, and method for manufacturing object
KR1020150084943A KR101850584B1 (ko) 2014-06-17 2015-06-16 조명 장치, 노광 장치, 조정 방법 및 물품의 제조 방법
CN201510336459.3A CN105278258B (zh) 2014-06-17 2015-06-17 照明器件、曝光装置、调整方法和用于制造物品的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014124752A JP6362095B2 (ja) 2014-06-17 2014-06-17 照明装置、露光装置、調整方法、及び、物品の製造方法

Publications (3)

Publication Number Publication Date
JP2016004921A JP2016004921A (ja) 2016-01-12
JP2016004921A5 JP2016004921A5 (enExample) 2017-07-27
JP6362095B2 true JP6362095B2 (ja) 2018-07-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014124752A Expired - Fee Related JP6362095B2 (ja) 2014-06-17 2014-06-17 照明装置、露光装置、調整方法、及び、物品の製造方法

Country Status (5)

Country Link
US (1) US9632423B2 (enExample)
JP (1) JP6362095B2 (enExample)
KR (1) KR101850584B1 (enExample)
CN (1) CN105278258B (enExample)
TW (1) TWI587097B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202016103819U1 (de) * 2016-07-14 2017-10-20 Suss Microtec Lithography Gmbh Lichtquellenanordnung für ein Belichtungssystem sowie Fotolithografie-Belichtungssystem
CN107179653B (zh) * 2017-07-20 2018-10-19 武汉华星光电技术有限公司 一种曝光机及其发光装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2899026B2 (ja) 1989-11-27 1999-06-02 株式会社日立製作所 マーク検出装置
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
JP2890892B2 (ja) * 1991-04-30 1999-05-17 キヤノン株式会社 露光装置及びそれを用いた素子製造方法
JP2633091B2 (ja) * 1991-02-22 1997-07-23 キヤノン株式会社 像投影方法、回路製造方法及び投影露光装置
CN1045103C (zh) 1994-06-18 1999-09-15 兰州炼油化工总厂三星公司 一种烷基水杨酸盐润滑油添加剂
JP2000075496A (ja) * 1998-08-31 2000-03-14 Canon Inc 冷却機構を有する光源、光源装置及びこれを用いた露光装置
JP2000098099A (ja) * 1998-09-21 2000-04-07 Nikon Corp Ｘ線照明装置及びｘ線投影露光装置
US6704090B2 (en) * 2000-05-11 2004-03-09 Nikon Corporation Exposure method and exposure apparatus
JP2001326171A (ja) * 2000-05-18 2001-11-22 Canon Inc 照明装置
EP1280008B2 (en) 2001-07-27 2011-09-14 Canon Kabushiki Kaisha Illumination system, projection exposure apparatus and device manufacturing method
JP2004063988A (ja) * 2002-07-31 2004-02-26 Canon Inc 照明光学系、当該照明光学系を有する露光装置及びデバイス製造方法
JP4086582B2 (ja) * 2002-08-06 2008-05-14 キヤノン株式会社 照明装置及び露光装置
JP2004079254A (ja) * 2002-08-13 2004-03-11 Canon Inc 光源装置及び露光装置
JP4470558B2 (ja) * 2004-03-31 2010-06-02 ウシオ電機株式会社 光照射装置
TWI401538B (zh) 2007-03-28 2013-07-11 Orc Mfg Co Ltd Exposure drawing device
EP3617588B1 (en) * 2007-04-12 2021-03-24 Nikon Corporation Discharge lamp, connecting cable. light source apparatus, and exposure apparatus
JP4921512B2 (ja) * 2009-04-13 2012-04-25 キヤノン株式会社 露光方法、露光装置およびデバイス製造方法
JP4990416B2 (ja) 2010-08-23 2012-08-01 三菱電機株式会社 投写型表示装置

Also Published As

Publication number Publication date
TW201600936A (zh) 2016-01-01
TWI587097B (zh) 2017-06-11
CN105278258A (zh) 2016-01-27
CN105278258B (zh) 2017-10-24
KR20150144711A (ko) 2015-12-28
JP2016004921A (ja) 2016-01-12
US9632423B2 (en) 2017-04-25
US20150362843A1 (en) 2015-12-17
KR101850584B1 (ko) 2018-04-19

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