JP6352687B2 - 放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム - Google Patents

放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム Download PDF

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JP6352687B2
JP6352687B2 JP2014117766A JP2014117766A JP6352687B2 JP 6352687 B2 JP6352687 B2 JP 6352687B2 JP 2014117766 A JP2014117766 A JP 2014117766A JP 2014117766 A JP2014117766 A JP 2014117766A JP 6352687 B2 JP6352687 B2 JP 6352687B2
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chip
elements
radiation detector
photoelectric conversion
discontinuous
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Expired - Fee Related
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JP2014117766A
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Japanese (ja)
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JP2015064332A5 (enExample
JP2015064332A (ja
Inventor
五十嵐　崇裕
崇裕 五十嵐
出穂 畑田
出穂 畑田
健 児玉
健 児玉
研 足立
研 足立
修一 岡
修一 岡
俊 御手洗
俊 御手洗
大鳥居　英
英 大鳥居
周作 柳川
周作 柳川
一治 松本
一治 松本
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2014117766A priority Critical patent/JP6352687B2/ja
Priority to TW103127513A priority patent/TWI645210B/zh
Priority to KR1020167004346A priority patent/KR20160047469A/ko
Priority to CN201480046020.0A priority patent/CN105474396A/zh
Priority to PCT/JP2014/004290 priority patent/WO2015029389A1/en
Priority to US14/908,319 priority patent/US9929199B2/en
Priority to EP14777187.7A priority patent/EP3039719B1/en
Publication of JP2015064332A publication Critical patent/JP2015064332A/ja
Publication of JP2015064332A5 publication Critical patent/JP2015064332A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2014117766A 2013-08-28 2014-06-06 放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム Expired - Fee Related JP6352687B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014117766A JP6352687B2 (ja) 2013-08-28 2014-06-06 放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム
TW103127513A TWI645210B (zh) 2013-08-28 2014-08-11 輻射偵測器、製造輻射偵測器的方法成像單元及成像顯示系統
CN201480046020.0A CN105474396A (zh) 2013-08-28 2014-08-21 辐射检测器、制造辐射检测器的方法、成像单元以及成像显示系统
PCT/JP2014/004290 WO2015029389A1 (en) 2013-08-28 2014-08-21 Radiation detector, method of manufacturing the radiation detector, imaging unit, and imaging and display system
KR1020167004346A KR20160047469A (ko) 2013-08-28 2014-08-21 방사선 검출기, 방사선 검출기의 제조 방법, 촬상 장치, 및 촬상 표시 시스템
US14/908,319 US9929199B2 (en) 2013-08-28 2014-08-21 Radiation detector, imaging unit, and imaging and display system
EP14777187.7A EP3039719B1 (en) 2013-08-28 2014-08-21 Radiation detector, method of manufacturing the radiation detector, imaging unit, and imaging and display system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013177175 2013-08-28
JP2013177175 2013-08-28
JP2014117766A JP6352687B2 (ja) 2013-08-28 2014-06-06 放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム

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JP2015064332A JP2015064332A (ja) 2015-04-09
JP2015064332A5 JP2015064332A5 (enExample) 2017-04-06
JP6352687B2 true JP6352687B2 (ja) 2018-07-04

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US (1) US9929199B2 (enExample)
EP (1) EP3039719B1 (enExample)
JP (1) JP6352687B2 (enExample)
KR (1) KR20160047469A (enExample)
CN (1) CN105474396A (enExample)
TW (1) TWI645210B (enExample)
WO (1) WO2015029389A1 (enExample)

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CN107658361A (zh) * 2016-07-25 2018-02-02 群创光电股份有限公司 主动矩阵式影像感测装置
JP2018081945A (ja) * 2016-11-14 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および製造方法、並びに電子機器
TWI659223B (zh) * 2018-04-12 2019-05-11 Silicon Optronics, Inc. Ｘ射線感測裝置及其製造方法
EP4111179A4 (en) * 2020-02-27 2023-11-15 Shenzhen Xpectvision Technology Co., Ltd. IMAGING SYSTEM
CN113325459B (zh) * 2021-05-28 2024-04-12 京东方科技集团股份有限公司 平板探测器及其制备方法、摄影设备
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

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Also Published As

Publication number Publication date
KR20160047469A (ko) 2016-05-02
EP3039719B1 (en) 2020-04-22
WO2015029389A1 (en) 2015-03-05
CN105474396A (zh) 2016-04-06
EP3039719A1 (en) 2016-07-06
TWI645210B (zh) 2018-12-21
US20160163754A1 (en) 2016-06-09
US9929199B2 (en) 2018-03-27
JP2015064332A (ja) 2015-04-09
TW201510558A (zh) 2015-03-16

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