TWI645210B - 輻射偵測器、製造輻射偵測器的方法成像單元及成像顯示系統 - Google Patents

輻射偵測器、製造輻射偵測器的方法成像單元及成像顯示系統 Download PDF

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Publication number
TWI645210B
TWI645210B TW103127513A TW103127513A TWI645210B TW I645210 B TWI645210 B TW I645210B TW 103127513 A TW103127513 A TW 103127513A TW 103127513 A TW103127513 A TW 103127513A TW I645210 B TWI645210 B TW I645210B
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TW
Taiwan
Prior art keywords
radiation detector
scintillator
photoelectric conversion
layer
substrate
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TW103127513A
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English (en)
Chinese (zh)
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TW201510558A (zh
Inventor
五十嵐崇裕
畑田出穗
兒玉健
足立研
岡修一
御手洗俊
大鳥居英
柳川周作
松本一治
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索尼半導體解決方案公司
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Publication of TW201510558A publication Critical patent/TW201510558A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW103127513A 2013-08-28 2014-08-11 輻射偵測器、製造輻射偵測器的方法成像單元及成像顯示系統 TWI645210B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013177175 2013-08-28
JP2013-177175 2013-08-28
JP2014-117766 2014-06-06
JP2014117766A JP6352687B2 (ja) 2013-08-28 2014-06-06 放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム

Publications (2)

Publication Number Publication Date
TW201510558A TW201510558A (zh) 2015-03-16
TWI645210B true TWI645210B (zh) 2018-12-21

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TW103127513A TWI645210B (zh) 2013-08-28 2014-08-11 輻射偵測器、製造輻射偵測器的方法成像單元及成像顯示系統

Country Status (7)

Country Link
US (1) US9929199B2 (enExample)
EP (1) EP3039719B1 (enExample)
JP (1) JP6352687B2 (enExample)
KR (1) KR20160047469A (enExample)
CN (1) CN105474396A (enExample)
TW (1) TWI645210B (enExample)
WO (1) WO2015029389A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10061036B2 (en) 2015-02-19 2018-08-28 Sony Corporation Radiation detector, method of manufacturing radiation detector, and imaging apparatus
US12298454B2 (en) 2015-08-10 2025-05-13 Shanghai United Imaging Healthcare Co., Ltd. Apparatus and method for PET detector
US9696439B2 (en) * 2015-08-10 2017-07-04 Shanghai United Imaging Healthcare Co., Ltd. Apparatus and method for PET detector
CN107658361A (zh) * 2016-07-25 2018-02-02 群创光电股份有限公司 主动矩阵式影像感测装置
JP2018081945A (ja) * 2016-11-14 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および製造方法、並びに電子機器
TWI659223B (zh) * 2018-04-12 2019-05-11 Silicon Optronics, Inc. Ｘ射線感測裝置及其製造方法
EP4111179A4 (en) * 2020-02-27 2023-11-15 Shenzhen Xpectvision Technology Co., Ltd. IMAGING SYSTEM
CN113325459B (zh) * 2021-05-28 2024-04-12 京东方科技集团股份有限公司 平板探测器及其制备方法、摄影设备
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003014850A (ja) * 2002-06-13 2003-01-15 Matsushita Electric Ind Co Ltd シンチレータユニットおよびシンチレータユニットの製造方法
US20040211884A1 (en) * 2003-04-28 2004-10-28 Ming Fang Microlens integration
US20090189055A1 (en) * 2008-01-25 2009-07-30 Visera Technologies Company Limited Image sensor and fabrication method thereof
US20100284167A1 (en) * 2006-01-05 2010-11-11 Duong Dung T Separate optical device for directing light from an led
US20110006213A1 (en) * 2009-07-10 2011-01-13 Fujifilm Corporation Radiation image detection apparatus and manufacturing method of the same
US20120091551A1 (en) * 2009-03-13 2012-04-19 Norman Marenco Method of manufacturing a multitude of micro-optoelectronic devices, and micro-optoelectronic device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171996A (en) * 1991-07-31 1992-12-15 Regents Of The University Of California Particle detector spatial resolution
US5132539A (en) * 1991-08-29 1992-07-21 General Electric Company Planar X-ray imager having a moisture-resistant sealing structure
JP2721476B2 (ja) * 1993-07-07 1998-03-04 浜松ホトニクス株式会社 放射線検出素子及びその製造方法
JPH09325185A (ja) * 1996-06-03 1997-12-16 Toshiba Fa Syst Eng Kk 放射線検出器とその製造方法と透視検査装置とｃｔスキャナ
JP4220017B2 (ja) * 1998-06-23 2009-02-04 浜松ホトニクス株式会社 シンチレータパネル、放射線イメージセンサ及びその製造方法
US20070187787A1 (en) * 2006-02-16 2007-08-16 Ackerson Kristin M Pixel sensor structure including light pipe and method for fabrication thereof
JP5089195B2 (ja) * 2006-03-02 2012-12-05 キヤノン株式会社 放射線検出装置、シンチレータパネル、放射線検出システム及び放射線検出装置の製造方法
US7704897B2 (en) * 2008-02-22 2010-04-27 Applied Materials, Inc. HDP-CVD SiON films for gap-fill
JP5721994B2 (ja) 2009-11-27 2015-05-20 株式会社ジャパンディスプレイ 放射線撮像装置
JP5448877B2 (ja) * 2010-01-25 2014-03-19 富士フイルム株式会社 放射線検出器
JP5844545B2 (ja) * 2010-05-31 2016-01-20 富士フイルム株式会社 放射線撮影装置
JP2012032645A (ja) * 2010-07-30 2012-02-16 Fujifilm Corp 放射線撮影装置及び放射線撮影システム
JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
US8648310B2 (en) * 2011-01-18 2014-02-11 Varian Medical Systems, Inc. Indirect X-ray imager having semi-transparent layers
JP5978625B2 (ja) * 2011-06-07 2016-08-24 ソニー株式会社 放射線撮像装置、放射線撮像表示システムおよびトランジスタ
JP5628103B2 (ja) * 2011-06-30 2014-11-19 富士フイルム株式会社 放射線検出器、放射線画像撮影システム、断線検出プログラム、及び断線検出方法
JP2013113756A (ja) * 2011-11-30 2013-06-10 Toshiba Corp 放射線検出器およびその製造方法
JP5895504B2 (ja) * 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム
JP2013134097A (ja) * 2011-12-26 2013-07-08 Canon Inc シンチレータパネル、放射線検出装置、及び、それらを用いた放射線検出システム
KR101965259B1 (ko) * 2012-07-27 2019-08-08 삼성디스플레이 주식회사 엑스선 검출기
US9691809B2 (en) * 2013-03-14 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated image sensor device having an oxide film and method of forming an oxide film of a backside illuminated image sensor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003014850A (ja) * 2002-06-13 2003-01-15 Matsushita Electric Ind Co Ltd シンチレータユニットおよびシンチレータユニットの製造方法
US20040211884A1 (en) * 2003-04-28 2004-10-28 Ming Fang Microlens integration
US20100284167A1 (en) * 2006-01-05 2010-11-11 Duong Dung T Separate optical device for directing light from an led
US20090189055A1 (en) * 2008-01-25 2009-07-30 Visera Technologies Company Limited Image sensor and fabrication method thereof
US20120091551A1 (en) * 2009-03-13 2012-04-19 Norman Marenco Method of manufacturing a multitude of micro-optoelectronic devices, and micro-optoelectronic device
US20110006213A1 (en) * 2009-07-10 2011-01-13 Fujifilm Corporation Radiation image detection apparatus and manufacturing method of the same

Also Published As

Publication number Publication date
KR20160047469A (ko) 2016-05-02
EP3039719B1 (en) 2020-04-22
JP6352687B2 (ja) 2018-07-04
WO2015029389A1 (en) 2015-03-05
CN105474396A (zh) 2016-04-06
EP3039719A1 (en) 2016-07-06
US20160163754A1 (en) 2016-06-09
US9929199B2 (en) 2018-03-27
JP2015064332A (ja) 2015-04-09
TW201510558A (zh) 2015-03-16

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