KR20160047469A - 방사선 검출기, 방사선 검출기의 제조 방법, 촬상 장치, 및 촬상 표시 시스템 - Google Patents

방사선 검출기, 방사선 검출기의 제조 방법, 촬상 장치, 및 촬상 표시 시스템 Download PDF

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Publication number
KR20160047469A
KR20160047469A KR1020167004346A KR20167004346A KR20160047469A KR 20160047469 A KR20160047469 A KR 20160047469A KR 1020167004346 A KR1020167004346 A KR 1020167004346A KR 20167004346 A KR20167004346 A KR 20167004346A KR 20160047469 A KR20160047469 A KR 20160047469A
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KR
South Korea
Prior art keywords
photoelectric conversion
layer
scintillator
substrate
radiation detector
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Abandoned
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KR1020167004346A
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English (en)
Korean (ko)
Inventor
타카히로 이가라시
이즈호 하타다
타케시 코다마
키와무 아다치
슈이치 오카
슌 미타라이
？ 미타라이
히이즈 오오토리이
슈사쿠 야나가와
카츠지 마츠모토
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소니 주식회사
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Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20160047469A publication Critical patent/KR20160047469A/ko
Abandoned legal-status Critical Current

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    • H01L27/14663—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H01L27/14625—
    • H01L27/14632—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020167004346A 2013-08-28 2014-08-21 방사선 검출기, 방사선 검출기의 제조 방법, 촬상 장치, 및 촬상 표시 시스템 Abandoned KR20160047469A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2013-177175 2013-08-28
JP2013177175 2013-08-28
JPJP-P-2014-117766 2014-06-06
JP2014117766A JP6352687B2 (ja) 2013-08-28 2014-06-06 放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム
PCT/JP2014/004290 WO2015029389A1 (en) 2013-08-28 2014-08-21 Radiation detector, method of manufacturing the radiation detector, imaging unit, and imaging and display system

Publications (1)

Publication Number Publication Date
KR20160047469A true KR20160047469A (ko) 2016-05-02

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KR1020167004346A Abandoned KR20160047469A (ko) 2013-08-28 2014-08-21 방사선 검출기, 방사선 검출기의 제조 방법, 촬상 장치, 및 촬상 표시 시스템

Country Status (7)

Country Link
US (1) US9929199B2 (enExample)
EP (1) EP3039719B1 (enExample)
JP (1) JP6352687B2 (enExample)
KR (1) KR20160047469A (enExample)
CN (1) CN105474396A (enExample)
TW (1) TWI645210B (enExample)
WO (1) WO2015029389A1 (enExample)

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US10061036B2 (en) 2015-02-19 2018-08-28 Sony Corporation Radiation detector, method of manufacturing radiation detector, and imaging apparatus
US12298454B2 (en) 2015-08-10 2025-05-13 Shanghai United Imaging Healthcare Co., Ltd. Apparatus and method for PET detector
US9696439B2 (en) * 2015-08-10 2017-07-04 Shanghai United Imaging Healthcare Co., Ltd. Apparatus and method for PET detector
CN107658361A (zh) * 2016-07-25 2018-02-02 群创光电股份有限公司 主动矩阵式影像感测装置
JP2018081945A (ja) * 2016-11-14 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および製造方法、並びに電子機器
TWI659223B (zh) * 2018-04-12 2019-05-11 Silicon Optronics, Inc. Ｘ射線感測裝置及其製造方法
EP4111179A4 (en) * 2020-02-27 2023-11-15 Shenzhen Xpectvision Technology Co., Ltd. IMAGING SYSTEM
CN113325459B (zh) * 2021-05-28 2024-04-12 京东方科技集团股份有限公司 平板探测器及其制备方法、摄影设备
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

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US20070187787A1 (en) * 2006-02-16 2007-08-16 Ackerson Kristin M Pixel sensor structure including light pipe and method for fabrication thereof
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Also Published As

Publication number Publication date
EP3039719B1 (en) 2020-04-22
JP6352687B2 (ja) 2018-07-04
WO2015029389A1 (en) 2015-03-05
CN105474396A (zh) 2016-04-06
EP3039719A1 (en) 2016-07-06
TWI645210B (zh) 2018-12-21
US20160163754A1 (en) 2016-06-09
US9929199B2 (en) 2018-03-27
JP2015064332A (ja) 2015-04-09
TW201510558A (zh) 2015-03-16

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