CN105474396A - 辐射检测器、制造辐射检测器的方法、成像单元以及成像显示系统 - Google Patents

辐射检测器、制造辐射检测器的方法、成像单元以及成像显示系统 Download PDF

Info

Publication number
CN105474396A
CN105474396A CN201480046020.0A CN201480046020A CN105474396A CN 105474396 A CN105474396 A CN 105474396A CN 201480046020 A CN201480046020 A CN 201480046020A CN 105474396 A CN105474396 A CN 105474396A
Authority
CN
China
Prior art keywords
photoelectric conversion
layer
radiation detector
substrate
scintillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480046020.0A
Other languages
English (en)
Chinese (zh)
Inventor
五十岚崇裕
畑田出穗
儿玉健
足立研
冈修一
御手洗俊
大岛居英
柳川周作
松本一治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN105474396A publication Critical patent/CN105474396A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201480046020.0A 2013-08-28 2014-08-21 辐射检测器、制造辐射检测器的方法、成像单元以及成像显示系统 Pending CN105474396A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013177175 2013-08-28
JP2013-177175 2013-08-28
JP2014-117766 2014-06-06
JP2014117766A JP6352687B2 (ja) 2013-08-28 2014-06-06 放射線検出器およびその製造方法、撮像装置、ならびに撮像表示システム
PCT/JP2014/004290 WO2015029389A1 (en) 2013-08-28 2014-08-21 Radiation detector, method of manufacturing the radiation detector, imaging unit, and imaging and display system

Publications (1)

Publication Number Publication Date
CN105474396A true CN105474396A (zh) 2016-04-06

Family

ID=51627334

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480046020.0A Pending CN105474396A (zh) 2013-08-28 2014-08-21 辐射检测器、制造辐射检测器的方法、成像单元以及成像显示系统

Country Status (7)

Country Link
US (1) US9929199B2 (enExample)
EP (1) EP3039719B1 (enExample)
JP (1) JP6352687B2 (enExample)
KR (1) KR20160047469A (enExample)
CN (1) CN105474396A (enExample)
TW (1) TWI645210B (enExample)
WO (1) WO2015029389A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107658361A (zh) * 2016-07-25 2018-02-02 群创光电股份有限公司 主动矩阵式影像感测装置
CN110376632A (zh) * 2018-04-12 2019-10-25 晶相光电股份有限公司 X射线感测装置及其制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10061036B2 (en) 2015-02-19 2018-08-28 Sony Corporation Radiation detector, method of manufacturing radiation detector, and imaging apparatus
US12298454B2 (en) 2015-08-10 2025-05-13 Shanghai United Imaging Healthcare Co., Ltd. Apparatus and method for PET detector
US9696439B2 (en) * 2015-08-10 2017-07-04 Shanghai United Imaging Healthcare Co., Ltd. Apparatus and method for PET detector
JP2018081945A (ja) * 2016-11-14 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および製造方法、並びに電子機器
EP4111179A4 (en) * 2020-02-27 2023-11-15 Shenzhen Xpectvision Technology Co., Ltd. IMAGING SYSTEM
CN113325459B (zh) * 2021-05-28 2024-04-12 京东方科技集团股份有限公司 平板探测器及其制备方法、摄影设备
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132539A (en) * 1991-08-29 1992-07-21 General Electric Company Planar X-ray imager having a moisture-resistant sealing structure
US5171996A (en) * 1991-07-31 1992-12-15 Regents Of The University Of California Particle detector spatial resolution
CN101494231A (zh) * 2008-01-25 2009-07-29 采钰科技股份有限公司 图像传感器及其制造方法
EP2273286A2 (en) * 2009-07-10 2011-01-12 Fujifilm Corporation Radiation image detection apparatus and manufacturing method of the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721476B2 (ja) * 1993-07-07 1998-03-04 浜松ホトニクス株式会社 放射線検出素子及びその製造方法
JPH09325185A (ja) * 1996-06-03 1997-12-16 Toshiba Fa Syst Eng Kk 放射線検出器とその製造方法と透視検査装置とｃｔスキャナ
JP4220017B2 (ja) * 1998-06-23 2009-02-04 浜松ホトニクス株式会社 シンチレータパネル、放射線イメージセンサ及びその製造方法
JP2003014850A (ja) * 2002-06-13 2003-01-15 Matsushita Electric Ind Co Ltd シンチレータユニットおよびシンチレータユニットの製造方法
US6953925B2 (en) * 2003-04-28 2005-10-11 Stmicroelectronics, Inc. Microlens integration
JP2009530798A (ja) * 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US20070187787A1 (en) * 2006-02-16 2007-08-16 Ackerson Kristin M Pixel sensor structure including light pipe and method for fabrication thereof
JP5089195B2 (ja) * 2006-03-02 2012-12-05 キヤノン株式会社 放射線検出装置、シンチレータパネル、放射線検出システム及び放射線検出装置の製造方法
US7704897B2 (en) * 2008-02-22 2010-04-27 Applied Materials, Inc. HDP-CVD SiON films for gap-fill
DE102009013112A1 (de) * 2009-03-13 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Vielzahl von mikrooptoelektronischen Bauelementen und mikrooptoelektronisches Bauelement
JP5721994B2 (ja) 2009-11-27 2015-05-20 株式会社ジャパンディスプレイ 放射線撮像装置
JP5448877B2 (ja) * 2010-01-25 2014-03-19 富士フイルム株式会社 放射線検出器
JP5844545B2 (ja) * 2010-05-31 2016-01-20 富士フイルム株式会社 放射線撮影装置
JP2012032645A (ja) * 2010-07-30 2012-02-16 Fujifilm Corp 放射線撮影装置及び放射線撮影システム
JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
US8648310B2 (en) * 2011-01-18 2014-02-11 Varian Medical Systems, Inc. Indirect X-ray imager having semi-transparent layers
JP5978625B2 (ja) * 2011-06-07 2016-08-24 ソニー株式会社 放射線撮像装置、放射線撮像表示システムおよびトランジスタ
JP5628103B2 (ja) * 2011-06-30 2014-11-19 富士フイルム株式会社 放射線検出器、放射線画像撮影システム、断線検出プログラム、及び断線検出方法
JP2013113756A (ja) * 2011-11-30 2013-06-10 Toshiba Corp 放射線検出器およびその製造方法
JP5895504B2 (ja) * 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム
JP2013134097A (ja) * 2011-12-26 2013-07-08 Canon Inc シンチレータパネル、放射線検出装置、及び、それらを用いた放射線検出システム
KR101965259B1 (ko) * 2012-07-27 2019-08-08 삼성디스플레이 주식회사 엑스선 검출기
US9691809B2 (en) * 2013-03-14 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated image sensor device having an oxide film and method of forming an oxide film of a backside illuminated image sensor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171996A (en) * 1991-07-31 1992-12-15 Regents Of The University Of California Particle detector spatial resolution
US5132539A (en) * 1991-08-29 1992-07-21 General Electric Company Planar X-ray imager having a moisture-resistant sealing structure
CN101494231A (zh) * 2008-01-25 2009-07-29 采钰科技股份有限公司 图像传感器及其制造方法
EP2273286A2 (en) * 2009-07-10 2011-01-12 Fujifilm Corporation Radiation image detection apparatus and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107658361A (zh) * 2016-07-25 2018-02-02 群创光电股份有限公司 主动矩阵式影像感测装置
CN110376632A (zh) * 2018-04-12 2019-10-25 晶相光电股份有限公司 X射线感测装置及其制造方法

Also Published As

Publication number Publication date
KR20160047469A (ko) 2016-05-02
EP3039719B1 (en) 2020-04-22
JP6352687B2 (ja) 2018-07-04
WO2015029389A1 (en) 2015-03-05
EP3039719A1 (en) 2016-07-06
TWI645210B (zh) 2018-12-21
US20160163754A1 (en) 2016-06-09
US9929199B2 (en) 2018-03-27
JP2015064332A (ja) 2015-04-09
TW201510558A (zh) 2015-03-16

Similar Documents

Publication Publication Date Title
US9929199B2 (en) Radiation detector, imaging unit, and imaging and display system
US6800836B2 (en) Image pickup device, radiation image pickup device and image processing system
US7932946B2 (en) Imaging apparatus and radiation imaging system
US11309451B2 (en) Flat panel detector and manufacturing method thereof
US9651683B2 (en) Image pickup panel and image pickup processing system
JPH05315581A (ja) 大領域能動マトリックス配列を製造する方法
JPWO2017145578A1 (ja) 撮像装置、撮像表示システムおよび表示装置
KR102517730B1 (ko) 디지털 엑스레이 검출기 패널과 이를 포함하는 엑스레이 시스템
CN110121780A (zh) 基于柔性聚酰亚胺的x射线检测器的分离和再附接
US20120305777A1 (en) Radiation image pickup device and radiation image pickup display system including the same
JP5436121B2 (ja) 撮像装置および放射線撮像システム
US10930677B2 (en) Alternative designs for addressing contacts that enhance bend ability of TFT backplanes
KR20200137308A (ko) 디지털 엑스레이 검출기와 이를 포함하는 디지털 엑스레이 검출 장치 및 이의 제조 방법
KR20180060769A (ko) 광차단층을 구비한 디지털 엑스레이 검출장치 및 그 제조방법
KR102520453B1 (ko) X선 검출기
JP2002214351A (ja) 放射線検出装置
US20250081655A1 (en) Light-sensitive matrix-array detector and process for producing the lightsensitive detector
JP2003163345A (ja) 放射線変換基板、放射線検出装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20160926

Address after: Japan's Asahi Atsugi city Kanagawa County town of 4-14-1

Applicant after: SONY semiconductor solutions

Address before: Japan's Tokyo port harbor 1-7-1

Applicant before: Sony Corp

RJ01 Rejection of invention patent application after publication

Application publication date: 20160406

RJ01 Rejection of invention patent application after publication