JP6350479B2 - ゲート電圧制御装置 - Google Patents
ゲート電圧制御装置 Download PDFInfo
- Publication number
- JP6350479B2 JP6350479B2 JP2015196763A JP2015196763A JP6350479B2 JP 6350479 B2 JP6350479 B2 JP 6350479B2 JP 2015196763 A JP2015196763 A JP 2015196763A JP 2015196763 A JP2015196763 A JP 2015196763A JP 6350479 B2 JP6350479 B2 JP 6350479B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- gate
- timing
- gate voltage
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 claims description 85
- 230000003071 parasitic effect Effects 0.000 description 33
- 230000007423 decrease Effects 0.000 description 14
- 230000002238 attenuated effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Inverter Devices (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:ゲートモニタ回路
14:パルス発生回路
16:ゲート駆動回路
20:DC−DCコンバータ
22:高電位配線
24:中間配線
26:低電位配線
28:バッテリ
30:リアクトル
32:MOSFET
34:ダイオード
36:コンデンサ
40:配線
42:寄生インダクタ
44:寄生容量
Claims (3)
- ゲート型スイッチング素子のゲート電圧を制御するゲート電圧制御装置であって、
前記ゲート型スイッチング素子をターンオフするときに、
ゲート電圧を閾値以下の値まで低下させることによって、前記ゲート型スイッチング素子の主端子間電圧をオン電圧から上昇させる第1処理と、
前記第1処理において前記主端子間電圧がピーク値を形成するタイミング以降に、前記ゲート電圧を閾値より大きい値に制御する第2処理と、
前記第2処理中に前記主端子間電圧が前記ピーク値よりも低く前記オン電圧よりも高い値で推移している間に、前記ゲート電圧を閾値以下の値に引き下げる第3処理、
を実行し、
前記第2処理の開始タイミング直前の前記主端子間電圧の時間変化率より、前記第2処理の終了タイミング直後の前記主端子間電圧の時間変化率が低くなり、
前記第2処理中に、前記ゲート電圧を、前記ゲート型スイッチング素子のミラー電圧よりも小さい値に制御する、
ゲート電圧制御装置。 - ゲート型スイッチング素子のゲート電圧を制御するゲート電圧制御装置であって、
前記ゲート型スイッチング素子をターンオフするときに、
ゲート電圧を閾値以下の値まで低下させることによって、前記ゲート型スイッチング素子の主端子間電圧をオン電圧から上昇させる第1処理と、
前記第1処理において前記主端子間電圧がピーク値を形成するタイミング以降に、前記ゲート電圧を閾値より大きい値に制御する第2処理と、
前記第2処理中に前記主端子間電圧が前記ピーク値よりも低く前記オン電圧よりも高い値で推移している間に、前記ゲート電圧を閾値以下の値に引き下げる第3処理、
を実行し、
前記第2処理の開始タイミング直前の前記主端子間電圧の時間変化率より、前記第2処理の終了タイミング直後の前記主端子間電圧の時間変化率が低くなり、
ターンオフ前に前記ゲート型スイッチング素子に流れていた電流が大きいほど、前記第2処理の期間を長くする、
ゲート電圧制御装置。 - ゲート型スイッチング素子のゲート電圧を制御するゲート電圧制御装置であって、
前記ゲート型スイッチング素子をターンオフするときに、
ゲート電圧を閾値以下の値まで低下させることによって、前記ゲート型スイッチング素子の主端子間電圧をオン電圧から上昇させる第1処理と、
前記第1処理において前記主端子間電圧がピーク値を形成するタイミング以降に、前記ゲート電圧を閾値より大きい値に制御する第2処理と、
前記第2処理中に前記主端子間電圧が前記ピーク値よりも低く前記オン電圧よりも高い値で推移している間に、前記ゲート電圧を閾値以下の値に引き下げる第3処理、
を実行し、
前記第2処理の開始タイミング直前の前記主端子間電圧の時間変化率より、前記第2処理の終了タイミング直後の前記主端子間電圧の時間変化率が低くなり、
前記ゲート電圧を検出し、前記第1処理中に前記ゲート電圧が閾値を下回ったタイミング以降に前記第2処理を開始する、
ゲート電圧制御装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015196763A JP6350479B2 (ja) | 2015-10-02 | 2015-10-02 | ゲート電圧制御装置 |
US15/228,496 US9673807B2 (en) | 2015-10-02 | 2016-08-04 | Gate voltage control apparatus configured to control a gate voltage of a switching device |
DE102016118190.0A DE102016118190B4 (de) | 2015-10-02 | 2016-09-27 | Gatespannungssteuervorrichtung |
CN201610861035.3A CN106849654B (zh) | 2015-10-02 | 2016-09-28 | 栅极电压控制装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015196763A JP6350479B2 (ja) | 2015-10-02 | 2015-10-02 | ゲート電圧制御装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017070164A JP2017070164A (ja) | 2017-04-06 |
JP6350479B2 true JP6350479B2 (ja) | 2018-07-04 |
Family
ID=58355748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015196763A Expired - Fee Related JP6350479B2 (ja) | 2015-10-02 | 2015-10-02 | ゲート電圧制御装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9673807B2 (ja) |
JP (1) | JP6350479B2 (ja) |
CN (1) | CN106849654B (ja) |
DE (1) | DE102016118190B4 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018157617A (ja) | 2017-03-15 | 2018-10-04 | トヨタ自動車株式会社 | ゲート電位制御装置 |
US10818785B2 (en) * | 2017-12-04 | 2020-10-27 | Ecole Polytechnique Federale De Lausanne (Epfl) | Sensing device for sensing minor charge variations |
WO2019130577A1 (ja) * | 2017-12-28 | 2019-07-04 | 新電元工業株式会社 | 半導体スイッチ制御回路及びスイッチング電源装置 |
CN107959491B (zh) * | 2017-12-29 | 2024-03-19 | 英迪迈智能驱动技术无锡股份有限公司 | 一种高效节能型p+n沟道驱动电路 |
CN109560689B (zh) * | 2018-12-28 | 2024-09-17 | 杰华特微电子股份有限公司 | 一种检测电路和方法以及开关电源 |
WO2021225111A1 (ja) * | 2020-05-07 | 2021-11-11 | 株式会社豊田自動織機 | 電力変換装置 |
JP2022171419A (ja) | 2021-04-30 | 2022-11-11 | 日立Astemo株式会社 | 半導体スイッチング素子の駆動装置およびその駆動方法、電力変換装置 |
WO2022249297A1 (ja) * | 2021-05-25 | 2022-12-01 | 三菱電機株式会社 | 半導体素子の駆動方法、及び、駆動装置、並びに、電力変換装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10156618C1 (de) | 2001-11-17 | 2003-04-03 | Semikron Elektronik Gmbh | Verfahren zur Ansteuerung von Leistungshalbleitermodulen |
DE10310783B4 (de) | 2003-03-12 | 2008-11-06 | Siemens Ag | Verfahren und Schaltungsanordnung zur Steuerung des Ausschaltvorganges eines abschaltbaren Leistungshalbleiterschalters |
JP4223379B2 (ja) * | 2003-12-10 | 2009-02-12 | 三菱電機株式会社 | スイッチングデバイスの制御装置およびモーターの駆動回路の制御装置 |
JP4816182B2 (ja) * | 2006-03-23 | 2011-11-16 | 株式会社日立製作所 | スイッチング素子の駆動回路 |
JP4762929B2 (ja) * | 2007-02-14 | 2011-08-31 | トヨタ自動車株式会社 | 半導体電力変換装置 |
JP2009253699A (ja) * | 2008-04-07 | 2009-10-29 | Toyota Motor Corp | 半導体素子の駆動回路 |
CA2759210A1 (en) * | 2009-05-11 | 2010-11-18 | Ss Sc Ip, Llc | Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor jfets |
JP5644830B2 (ja) * | 2012-10-18 | 2014-12-24 | 株式会社デンソー | 駆動対象スイッチング素子の駆動回路 |
JP5751236B2 (ja) * | 2012-10-24 | 2015-07-22 | トヨタ自動車株式会社 | スイッチング制御回路 |
JP5993749B2 (ja) | 2013-01-30 | 2016-09-14 | 株式会社 日立パワーデバイス | 半導体装置のゲート駆動回路およびそれを用いた電力変換装置 |
JP6135163B2 (ja) | 2013-02-12 | 2017-05-31 | 株式会社デンソー | 電子装置 |
JP6359856B2 (ja) | 2014-04-01 | 2018-07-18 | 株式会社イノアックコーポレーション | 車両用外装品、車両用外装品製造方法および、車両用外装品の材料 |
-
2015
- 2015-10-02 JP JP2015196763A patent/JP6350479B2/ja not_active Expired - Fee Related
-
2016
- 2016-08-04 US US15/228,496 patent/US9673807B2/en active Active
- 2016-09-27 DE DE102016118190.0A patent/DE102016118190B4/de not_active Expired - Fee Related
- 2016-09-28 CN CN201610861035.3A patent/CN106849654B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20170099046A1 (en) | 2017-04-06 |
US9673807B2 (en) | 2017-06-06 |
DE102016118190A1 (de) | 2017-04-06 |
CN106849654A (zh) | 2017-06-13 |
CN106849654B (zh) | 2019-06-18 |
DE102016118190B4 (de) | 2020-06-18 |
JP2017070164A (ja) | 2017-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6350479B2 (ja) | ゲート電圧制御装置 | |
US9112498B2 (en) | Dynamic MOSFET gate drivers | |
US8680897B2 (en) | Switching element control apparatus | |
US8363440B2 (en) | Power conversion circuit having off-voltage control circuit | |
JP7268507B2 (ja) | ゲート駆動装置及び電力変換装置 | |
US10469057B1 (en) | Method for self adaption of gate current controls by capacitance measurement of a power transistor | |
JP5736243B2 (ja) | 電源回路 | |
CN107809171B (zh) | 开关电源及其功率开关管的驱动方法与驱动电路 | |
US10199919B2 (en) | Zero dead time control circuit | |
US9660511B2 (en) | Gate driver circuit and power conversion apparatus using same | |
JP2009118650A (ja) | 電力変換装置 | |
JP2009011013A (ja) | 電力変換装置 | |
JP2015177554A (ja) | 半導体装置及び半導体装置の制御方法 | |
US10483853B2 (en) | DC-DC converter | |
JP2017050914A (ja) | スイッチング素子駆動装置 | |
JP6946772B2 (ja) | 電力変換装置 | |
CN115733478A (zh) | 栅极驱动器系统和驱动半桥电路的方法 | |
US20160241011A1 (en) | Power conversion apparatus | |
JP2006324794A (ja) | 電圧駆動型半導体素子の駆動装置 | |
CN112953174B (zh) | 基于dv/dt检测的抑制SiC MOSFET串扰的钳位有源驱动电路 | |
JP5994697B2 (ja) | 半導体駆動装置 | |
JP6025145B2 (ja) | インバータ制御装置 | |
JP6806548B2 (ja) | 電源制御装置、および絶縁型スイッチング電源装置 | |
TWI429181B (zh) | 開關變換器的裝置及方法 | |
WO2024004469A1 (ja) | コンバータ回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170303 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180228 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180508 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180521 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6350479 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |