JP6349856B2 - 駆動装置 - Google Patents

駆動装置 Download PDF

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Publication number
JP6349856B2
JP6349856B2 JP2014066597A JP2014066597A JP6349856B2 JP 6349856 B2 JP6349856 B2 JP 6349856B2 JP 2014066597 A JP2014066597 A JP 2014066597A JP 2014066597 A JP2014066597 A JP 2014066597A JP 6349856 B2 JP6349856 B2 JP 6349856B2
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JP
Japan
Prior art keywords
current
switching element
power switching
threshold value
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014066597A
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English (en)
Japanese (ja)
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JP2015192491A5 (enExample
JP2015192491A (ja
Inventor
拓生 長瀬
拓生 長瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2014066597A priority Critical patent/JP6349856B2/ja
Priority to CN201580015852.0A priority patent/CN106134050B/zh
Priority to PCT/JP2015/001366 priority patent/WO2015146041A1/ja
Priority to US15/117,480 priority patent/US9660636B2/en
Publication of JP2015192491A publication Critical patent/JP2015192491A/ja
Publication of JP2015192491A5 publication Critical patent/JP2015192491A5/ja
Application granted granted Critical
Publication of JP6349856B2 publication Critical patent/JP6349856B2/ja
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Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
JP2014066597A 2014-03-27 2014-03-27 駆動装置 Active JP6349856B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014066597A JP6349856B2 (ja) 2014-03-27 2014-03-27 駆動装置
CN201580015852.0A CN106134050B (zh) 2014-03-27 2015-03-12 驱动装置
PCT/JP2015/001366 WO2015146041A1 (ja) 2014-03-27 2015-03-12 駆動装置
US15/117,480 US9660636B2 (en) 2014-03-27 2015-03-12 Drive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014066597A JP6349856B2 (ja) 2014-03-27 2014-03-27 駆動装置

Publications (3)

Publication Number Publication Date
JP2015192491A JP2015192491A (ja) 2015-11-02
JP2015192491A5 JP2015192491A5 (enExample) 2016-05-26
JP6349856B2 true JP6349856B2 (ja) 2018-07-04

Family

ID=54194595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014066597A Active JP6349856B2 (ja) 2014-03-27 2014-03-27 駆動装置

Country Status (4)

Country Link
US (1) US9660636B2 (enExample)
JP (1) JP6349856B2 (enExample)
CN (1) CN106134050B (enExample)
WO (1) WO2015146041A1 (enExample)

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JP6561208B2 (ja) * 2016-05-09 2019-08-14 株式会社日立製作所 電力変換装置の診断システム、半導体モジュールの診断方法、および、電力変換装置
CN107846137B (zh) * 2016-09-19 2020-04-03 维谛公司 一种半导体开关元器件的限流方法及设备
JP2018157617A (ja) * 2017-03-15 2018-10-04 トヨタ自動車株式会社 ゲート電位制御装置
JP2019057982A (ja) * 2017-09-20 2019-04-11 株式会社東芝 半導体素子の駆動回路及び半導体素子の駆動方法
JP7026531B2 (ja) * 2018-02-23 2022-02-28 ルネサスエレクトロニクス株式会社 半導体装置、半導体システム、及び、制御システム
JP6924216B2 (ja) * 2019-03-05 2021-08-25 株式会社東芝 電子回路および方法
CN110834653B (zh) * 2019-10-15 2024-03-19 上海新海信通信息技术有限公司 城市轨道交通钢轨断轨监测系统及方法
CN112904925B (zh) * 2019-11-19 2022-07-29 杭州海康消防科技有限公司 负载驱动和保护电路
DE102022133711A1 (de) * 2022-12-16 2024-06-27 Infineon Technologies Ag Intelligenter halbleiterschalter mit quasi-digitaler strombegrenzung
US20240297643A1 (en) * 2023-03-02 2024-09-05 Texas Instruments Incorporated Driver circuit with overcurrent protection
CN117791493A (zh) * 2023-12-26 2024-03-29 上海贝岭股份有限公司 高边开关芯片
US20250330170A1 (en) * 2024-04-17 2025-10-23 Texas Instruments Incorporated High-side switch circuit

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US5500619A (en) 1992-03-18 1996-03-19 Fuji Electric Co., Ltd. Semiconductor device
JPH05276761A (ja) * 1992-03-19 1993-10-22 Hitachi Ltd パワー半導体素子の過電流検出方法及び回路並びにこれを用いたインバータ装置
JP3152204B2 (ja) 1998-06-02 2001-04-03 日本電気株式会社 スルーレート出力回路
JP2001223571A (ja) 2000-02-10 2001-08-17 Fuji Electric Co Ltd 電圧駆動型半導体素子のゲート駆動装置
US7132868B2 (en) 2001-06-27 2006-11-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
DE10161743B4 (de) * 2001-12-15 2004-08-05 Hüttinger Elektronik GmbH & Co. KG Hochfrequenzanregungsanordnung
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JP2010154595A (ja) 2008-12-24 2010-07-08 Denso Corp 電力変換装置
JP2010193431A (ja) * 2009-01-26 2010-09-02 Rohm Co Ltd 出力回路およびモータ駆動装置
JP5678498B2 (ja) * 2010-07-15 2015-03-04 富士電機株式会社 電力用半導体素子のゲート駆動回路
JP2012070263A (ja) * 2010-09-24 2012-04-05 Denso Corp 電子装置
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JP5660404B2 (ja) * 2013-03-05 2015-01-28 株式会社デンソー 電子装置
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JP5831527B2 (ja) * 2013-10-31 2015-12-09 トヨタ自動車株式会社 半導体装置
JP5831528B2 (ja) * 2013-10-31 2015-12-09 トヨタ自動車株式会社 半導体装置
JP5800006B2 (ja) * 2013-10-31 2015-10-28 トヨタ自動車株式会社 半導体装置
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Also Published As

Publication number Publication date
US9660636B2 (en) 2017-05-23
US20160352319A1 (en) 2016-12-01
CN106134050B (zh) 2019-08-16
WO2015146041A1 (ja) 2015-10-01
CN106134050A (zh) 2016-11-16
JP2015192491A (ja) 2015-11-02

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