JP6343627B2 - 電気絶縁体実装構造 - Google Patents
電気絶縁体実装構造 Download PDFInfo
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- JP6343627B2 JP6343627B2 JP2016075579A JP2016075579A JP6343627B2 JP 6343627 B2 JP6343627 B2 JP 6343627B2 JP 2016075579 A JP2016075579 A JP 2016075579A JP 2016075579 A JP2016075579 A JP 2016075579A JP 6343627 B2 JP6343627 B2 JP 6343627B2
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- 239000000615 nonconductor Substances 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 claims description 91
- 238000000926 separation method Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008054 signal transmission Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017545—Coupling arrangements; Impedance matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computing Systems (AREA)
- Measuring Magnetic Variables (AREA)
- Near-Field Transmission Systems (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
110 電気絶縁体
120 第1回路
130 第2回路
140 負荷
VD1 第1電圧ドメイン
VD2 第2電圧ドメイン
210 コイル
220 磁界センサ
300、400、500、600 電気絶縁体実装構造
310、410、510、610 第1基板
320、420、520、620 第2基板
330、430、530、630 コイル
340、440、540、640 磁界センサ
350、450 電位分離層
360、460、560、760 第1パッド
370、470、570、670 入力アンプ
380、480、580、680 第2パッド
390、490、590、690 出力アンプ
S1 第1表面
S2 第2表面
S3 第3表面
S4 第4表面
615 第3基板
665 第3パッド
Claims (12)
- チップ基板としての第1基板と、
前記第1基板内に設置され、電位分離層によって前記第1基板と分離される第2基板と、
前記第1基板の上に配置されたコイルと、
前記第2基板の上に配置された磁界センサと、
を含み、
前記電位分離層が前記第1基板と前記第2基板との間に配置され、
前記コイルの位置を前記磁界センサの位置に応じて配置することにより、前記コイルが前記磁界センサに信号を伝送できるようにした電気絶縁体実装構造。 - 前記磁界センサが、ホールセンサである請求項1に記載の電気絶縁体実装構造。
- 前記第1基板の上に配置された入力アンプ
をさらに含み、前記入力アンプが、前記コイルの両端に接続された請求項1に記載の電気絶縁体実装構造。 - 前記第1基板が、複数の第1パッドを含み、前記コイルが、前記入力アンプを介して前記第1パッドに電気接続された請求項3に記載の電気絶縁体実装構造。
- 複数のワイヤおよび前記第1パッドを介して前記入力アンプの入力端に結合され、前記入力アンプに入力信号を伝送する入力段回路
をさらに含む請求項4に記載の電気絶縁体実装構造。 - 前記第2基板の上に配置された出力アンプ
をさらに含み、前記出力アンプが、前記磁界センサの出力端に接続された請求項1に記載の電気絶縁体実装構造。 - 前記第2基板が、複数の第2パッドを含み、前記磁界センサが、前記出力アンプを介して前記第2パッドに電気接続された請求項6に記載の電気絶縁体実装構造。
- 複数のワイヤおよび前記第2パッドを介して前記出力アンプの出力端に結合され、前記出力アンプの出力信号を受信する出力段回路
をさらに含む請求項7に記載の電気絶縁体実装構造。 - 前記出力段回路の前記出力端に結合された負荷
をさらに含む請求項8に記載の電気絶縁体実装構造。 - 第3基板と、
前記第3基板の上に配置され、前記第3基板内の複数の第3パッドに電気接続された制御回路と、
をさらに含み、前記コイルが、前記第1基板の第1パッドに接続され、前記制御回路が、前記第3基板内の前記第3パッドおよび前記第1基板内の前記第1パッドを介して、前記コイルに電気接続された請求項1に記載の電気絶縁体実装構造。 - 前記第1基板を前記第2基板の上方に配置することにより、前記コイルの前記位置が前記磁界センサのすぐ上方になるようにした請求項1に記載の電気絶縁体実装構造。
- 第3基板と、
前記第3基板の上に配置され、前記第3基板内の複数の第3パッドに電気接続された制御回路と、
をさらに含み、前記コイルが、前記第1基板の第1パッドに接続され、前記制御回路が、前記第3基板内の前記第3パッドおよび前記第1基板内の前記第1パッドを介して、前記コイルに電気接続された請求項11に記載の電気絶縁体実装構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104136245A TWI595518B (zh) | 2015-11-04 | 2015-11-04 | 電隔離器構裝結構及電隔離器的製造方法 |
TW104136245 | 2015-11-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017092932A JP2017092932A (ja) | 2017-05-25 |
JP6343627B2 true JP6343627B2 (ja) | 2018-06-13 |
Family
ID=58637390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016075579A Active JP6343627B2 (ja) | 2015-11-04 | 2016-04-05 | 電気絶縁体実装構造 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9847292B2 (ja) |
JP (1) | JP6343627B2 (ja) |
CN (1) | CN106656151A (ja) |
TW (1) | TWI595518B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI595518B (zh) | 2015-11-04 | 2017-08-11 | 財團法人工業技術研究院 | 電隔離器構裝結構及電隔離器的製造方法 |
TWI573315B (zh) * | 2016-01-19 | 2017-03-01 | 財團法人工業技術研究院 | 電隔離器電路 |
TWI649540B (zh) | 2017-10-26 | 2019-02-01 | 財團法人工業技術研究院 | 無電池旋轉編碼器 |
US11372061B2 (en) | 2020-03-13 | 2022-06-28 | Globalfoundries Singapore Pte. Ltd. | Hall effect sensor devices and methods of forming hall effect sensor devices |
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-
2015
- 2015-11-04 TW TW104136245A patent/TWI595518B/zh active
- 2015-12-03 CN CN201510881237.XA patent/CN106656151A/zh active Pending
- 2015-12-18 US US14/973,728 patent/US9847292B2/en active Active
-
2016
- 2016-04-05 JP JP2016075579A patent/JP6343627B2/ja active Active
Also Published As
Publication number | Publication date |
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TWI595518B (zh) | 2017-08-11 |
JP2017092932A (ja) | 2017-05-25 |
US20170125343A1 (en) | 2017-05-04 |
CN106656151A (zh) | 2017-05-10 |
US9847292B2 (en) | 2017-12-19 |
TW201717227A (zh) | 2017-05-16 |
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