JP6316084B2 - リソグラフィ装置、および物品の製造方法 - Google Patents

リソグラフィ装置、および物品の製造方法 Download PDF

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Publication number
JP6316084B2
JP6316084B2 JP2014094878A JP2014094878A JP6316084B2 JP 6316084 B2 JP6316084 B2 JP 6316084B2 JP 2014094878 A JP2014094878 A JP 2014094878A JP 2014094878 A JP2014094878 A JP 2014094878A JP 6316084 B2 JP6316084 B2 JP 6316084B2
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JP
Japan
Prior art keywords
unit
base member
substrate
relative position
lithographic apparatus
Prior art date
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Active
Application number
JP2014094878A
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English (en)
Japanese (ja)
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JP2015213113A5 (enExample
JP2015213113A (ja
Inventor
大介 岩▲瀬▼
大介 岩▲瀬▼
是永　伸茂
伸茂 是永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014094878A priority Critical patent/JP6316084B2/ja
Priority to US14/698,982 priority patent/US9947508B2/en
Publication of JP2015213113A publication Critical patent/JP2015213113A/ja
Publication of JP2015213113A5 publication Critical patent/JP2015213113A5/ja
Application granted granted Critical
Publication of JP6316084B2 publication Critical patent/JP6316084B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20292—Means for position and/or orientation registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014094878A 2014-05-01 2014-05-01 リソグラフィ装置、および物品の製造方法 Active JP6316084B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014094878A JP6316084B2 (ja) 2014-05-01 2014-05-01 リソグラフィ装置、および物品の製造方法
US14/698,982 US9947508B2 (en) 2014-05-01 2015-04-29 Lithography apparatus, and method of manufacturing an article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014094878A JP6316084B2 (ja) 2014-05-01 2014-05-01 リソグラフィ装置、および物品の製造方法

Publications (3)

Publication Number Publication Date
JP2015213113A JP2015213113A (ja) 2015-11-26
JP2015213113A5 JP2015213113A5 (enExample) 2017-06-15
JP6316084B2 true JP6316084B2 (ja) 2018-04-25

Family

ID=54355729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014094878A Active JP6316084B2 (ja) 2014-05-01 2014-05-01 リソグラフィ装置、および物品の製造方法

Country Status (2)

Country Link
US (1) US9947508B2 (enExample)
JP (1) JP6316084B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7178944B2 (ja) * 2019-04-09 2022-11-28 株式会社ニューフレアテクノロジー ステージ装置
JP7604330B2 (ja) * 2021-06-21 2024-12-23 株式会社ニューフレアテクノロジー 描画装置及び描画方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3704694B2 (ja) * 1996-03-22 2005-10-12 株式会社ニコン 荷電粒子線転写装置
JP2000114137A (ja) * 1998-09-30 2000-04-21 Advantest Corp 電子ビーム露光装置及びアライメント方法
US6614504B2 (en) * 2000-03-30 2003-09-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2002198285A (ja) * 2000-12-25 2002-07-12 Nikon Corp ステージ装置およびその制振方法並びに露光装置
JP3713450B2 (ja) * 2001-05-22 2005-11-09 株式会社日立製作所 走査形電子顕微鏡
JP4205390B2 (ja) * 2002-09-12 2009-01-07 キヤノン株式会社 露光装置及びデバイス製造方法
JP4074224B2 (ja) * 2003-06-26 2008-04-09 住友重機械工業株式会社 真空装置及び電子ビーム近接露光装置
JP2006100747A (ja) * 2004-09-30 2006-04-13 Nikon Corp ステージ装置、ステージ装置の調整方法及び露光装置
US7864292B2 (en) * 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4535991B2 (ja) * 2005-11-29 2010-09-01 京セラ株式会社 静圧スライダ
JP2009076583A (ja) * 2007-09-19 2009-04-09 Nikon Corp ステージ装置、露光装置、露光方法及びデバイス製造方法
JP2015106604A (ja) * 2013-11-29 2015-06-08 キヤノン株式会社 ビームの傾き計測方法、描画方法、描画装置、及び物品の製造方法
JP2015198121A (ja) * 2014-03-31 2015-11-09 キヤノン株式会社 リソグラフィ装置、ステージ装置、及び物品の製造方法

Also Published As

Publication number Publication date
US20150318145A1 (en) 2015-11-05
JP2015213113A (ja) 2015-11-26
US9947508B2 (en) 2018-04-17

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