JP6311446B2 - シリコンウェーハの製造方法 - Google Patents
シリコンウェーハの製造方法 Download PDFInfo
- Publication number
- JP6311446B2 JP6311446B2 JP2014103609A JP2014103609A JP6311446B2 JP 6311446 B2 JP6311446 B2 JP 6311446B2 JP 2014103609 A JP2014103609 A JP 2014103609A JP 2014103609 A JP2014103609 A JP 2014103609A JP 6311446 B2 JP6311446 B2 JP 6311446B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- silicon wafer
- polishing
- wafer
- haze
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 92
- 229910052710 silicon Inorganic materials 0.000 title claims description 92
- 239000010703 silicon Substances 0.000 title claims description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000004140 cleaning Methods 0.000 claims description 141
- 238000005498 polishing Methods 0.000 claims description 104
- 239000007788 liquid Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 23
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 8
- 239000004744 fabric Substances 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 133
- 239000002245 particle Substances 0.000 description 23
- 238000007518 final polishing process Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000008119 colloidal silica Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 208000010727 head pressing Diseases 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014103609A JP6311446B2 (ja) | 2014-05-19 | 2014-05-19 | シリコンウェーハの製造方法 |
TW104101629A TWI553722B (zh) | 2014-05-19 | 2015-01-19 | Silicon wafer manufacturing method and silicon wafer |
CN201510171396.0A CN105097444B (zh) | 2014-05-19 | 2015-04-13 | 硅晶片的制造方法及硅晶片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014103609A JP6311446B2 (ja) | 2014-05-19 | 2014-05-19 | シリコンウェーハの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015220370A JP2015220370A (ja) | 2015-12-07 |
JP2015220370A5 JP2015220370A5 (enrdf_load_stackoverflow) | 2016-06-02 |
JP6311446B2 true JP6311446B2 (ja) | 2018-04-18 |
Family
ID=54577621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014103609A Active JP6311446B2 (ja) | 2014-05-19 | 2014-05-19 | シリコンウェーハの製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6311446B2 (enrdf_load_stackoverflow) |
CN (1) | CN105097444B (enrdf_load_stackoverflow) |
TW (1) | TWI553722B (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6432497B2 (ja) * | 2015-12-10 | 2018-12-05 | 信越半導体株式会社 | 研磨方法 |
JP6641197B2 (ja) * | 2016-03-10 | 2020-02-05 | 株式会社荏原製作所 | 基板の研磨装置および研磨方法 |
JP7327974B2 (ja) * | 2019-04-01 | 2023-08-16 | 株式会社ディスコ | ウェーハの分割方法 |
JP7556426B1 (ja) * | 2023-05-30 | 2024-09-26 | 株式会社Sumco | シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ |
CN116852183B (zh) * | 2023-08-02 | 2024-04-02 | 山东有研半导体材料有限公司 | 一种用于大型晶圆研磨机改善晶圆形貌的研磨工艺 |
CN117161839B (zh) * | 2023-11-01 | 2024-02-06 | 山东有研艾斯半导体材料有限公司 | 一种改善硅抛光片边缘机械损伤的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521412A (ja) * | 1991-07-10 | 1993-01-29 | Fujitsu Ltd | 半導体基板の処理方法 |
JP2000315635A (ja) * | 1999-04-30 | 2000-11-14 | Mitsubishi Materials Silicon Corp | 張り合わせ用シリコンウェーハおよびこれを用いた張り合わせ基板の製造方法 |
JP2004291150A (ja) * | 2003-03-27 | 2004-10-21 | Tungaloy Corp | 立方晶窒化硼素焼結体回転工具 |
JP4683233B2 (ja) * | 2004-09-30 | 2011-05-18 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
US20080072926A1 (en) * | 2004-09-30 | 2008-03-27 | Shin-Etsu Handotai Co., Ltd. | Method for Cleaning Soi Wafer |
DE112007002066B4 (de) * | 2006-09-06 | 2019-10-17 | Nitta Haas Inc. | Polierkissen |
JP2009252413A (ja) * | 2008-04-02 | 2009-10-29 | Kobe Steel Ltd | 電子線源 |
US20110300776A1 (en) * | 2010-06-03 | 2011-12-08 | Applied Materials, Inc. | Tuning of polishing process in multi-carrier head per platen polishing station |
JP2012001798A (ja) * | 2010-06-21 | 2012-01-05 | Yokogawa Electric Corp | 電解装置用電極の製造方法 |
JP5622124B2 (ja) * | 2010-07-02 | 2014-11-12 | 株式会社Sumco | シリコンウェーハの研磨方法 |
-
2014
- 2014-05-19 JP JP2014103609A patent/JP6311446B2/ja active Active
-
2015
- 2015-01-19 TW TW104101629A patent/TWI553722B/zh active
- 2015-04-13 CN CN201510171396.0A patent/CN105097444B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TW201545222A (zh) | 2015-12-01 |
TWI553722B (zh) | 2016-10-11 |
CN105097444A (zh) | 2015-11-25 |
CN105097444B (zh) | 2018-11-23 |
JP2015220370A (ja) | 2015-12-07 |
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