CN105097444B - 硅晶片的制造方法及硅晶片 - Google Patents
硅晶片的制造方法及硅晶片 Download PDFInfo
- Publication number
- CN105097444B CN105097444B CN201510171396.0A CN201510171396A CN105097444B CN 105097444 B CN105097444 B CN 105097444B CN 201510171396 A CN201510171396 A CN 201510171396A CN 105097444 B CN105097444 B CN 105097444B
- Authority
- CN
- China
- Prior art keywords
- cleaning
- silicon wafer
- smooth grinding
- grinding
- hydrogen fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 110
- 239000010703 silicon Substances 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 150
- 238000000034 method Methods 0.000 claims abstract description 109
- 230000008569 process Effects 0.000 claims abstract description 106
- 238000000227 grinding Methods 0.000 claims abstract description 97
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000003595 mist Substances 0.000 claims abstract description 46
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000001257 hydrogen Substances 0.000 claims abstract description 35
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 35
- 235000012431 wafers Nutrition 0.000 description 125
- 239000000243 solution Substances 0.000 description 25
- 239000007788 liquid Substances 0.000 description 23
- 239000002245 particle Substances 0.000 description 21
- 238000005498 polishing Methods 0.000 description 17
- 238000005259 measurement Methods 0.000 description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229960002050 hydrofluoric acid Drugs 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000004611 spectroscopical analysis Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 241001269238 Data Species 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014103609A JP6311446B2 (ja) | 2014-05-19 | 2014-05-19 | シリコンウェーハの製造方法 |
| JP2014-103609 | 2014-05-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105097444A CN105097444A (zh) | 2015-11-25 |
| CN105097444B true CN105097444B (zh) | 2018-11-23 |
Family
ID=54577621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510171396.0A Active CN105097444B (zh) | 2014-05-19 | 2015-04-13 | 硅晶片的制造方法及硅晶片 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6311446B2 (enrdf_load_stackoverflow) |
| CN (1) | CN105097444B (enrdf_load_stackoverflow) |
| TW (1) | TWI553722B (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6432497B2 (ja) * | 2015-12-10 | 2018-12-05 | 信越半導体株式会社 | 研磨方法 |
| JP6641197B2 (ja) * | 2016-03-10 | 2020-02-05 | 株式会社荏原製作所 | 基板の研磨装置および研磨方法 |
| JP7327974B2 (ja) * | 2019-04-01 | 2023-08-16 | 株式会社ディスコ | ウェーハの分割方法 |
| JP7556426B1 (ja) * | 2023-05-30 | 2024-09-26 | 株式会社Sumco | シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ |
| CN116852183B (zh) * | 2023-08-02 | 2024-04-02 | 山东有研半导体材料有限公司 | 一种用于大型晶圆研磨机改善晶圆形貌的研磨工艺 |
| CN117161839B (zh) * | 2023-11-01 | 2024-02-06 | 山东有研艾斯半导体材料有限公司 | 一种改善硅抛光片边缘机械损伤的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000315635A (ja) * | 1999-04-30 | 2000-11-14 | Mitsubishi Materials Silicon Corp | 張り合わせ用シリコンウェーハおよびこれを用いた張り合わせ基板の製造方法 |
| CN102725827A (zh) * | 2010-06-03 | 2012-10-10 | 应用材料公司 | 每个平台研磨站的多载具头中的研磨制程的调节 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0521412A (ja) * | 1991-07-10 | 1993-01-29 | Fujitsu Ltd | 半導体基板の処理方法 |
| JP2004291150A (ja) * | 2003-03-27 | 2004-10-21 | Tungaloy Corp | 立方晶窒化硼素焼結体回転工具 |
| JP4683233B2 (ja) * | 2004-09-30 | 2011-05-18 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
| US20080072926A1 (en) * | 2004-09-30 | 2008-03-27 | Shin-Etsu Handotai Co., Ltd. | Method for Cleaning Soi Wafer |
| DE112007002066B4 (de) * | 2006-09-06 | 2019-10-17 | Nitta Haas Inc. | Polierkissen |
| JP2009252413A (ja) * | 2008-04-02 | 2009-10-29 | Kobe Steel Ltd | 電子線源 |
| JP2012001798A (ja) * | 2010-06-21 | 2012-01-05 | Yokogawa Electric Corp | 電解装置用電極の製造方法 |
| JP5622124B2 (ja) * | 2010-07-02 | 2014-11-12 | 株式会社Sumco | シリコンウェーハの研磨方法 |
-
2014
- 2014-05-19 JP JP2014103609A patent/JP6311446B2/ja active Active
-
2015
- 2015-01-19 TW TW104101629A patent/TWI553722B/zh active
- 2015-04-13 CN CN201510171396.0A patent/CN105097444B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000315635A (ja) * | 1999-04-30 | 2000-11-14 | Mitsubishi Materials Silicon Corp | 張り合わせ用シリコンウェーハおよびこれを用いた張り合わせ基板の製造方法 |
| CN102725827A (zh) * | 2010-06-03 | 2012-10-10 | 应用材料公司 | 每个平台研磨站的多载具头中的研磨制程的调节 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201545222A (zh) | 2015-12-01 |
| TWI553722B (zh) | 2016-10-11 |
| CN105097444A (zh) | 2015-11-25 |
| JP6311446B2 (ja) | 2018-04-18 |
| JP2015220370A (ja) | 2015-12-07 |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |