JP6300662B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

Info

Publication number
JP6300662B2
JP6300662B2 JP2014127439A JP2014127439A JP6300662B2 JP 6300662 B2 JP6300662 B2 JP 6300662B2 JP 2014127439 A JP2014127439 A JP 2014127439A JP 2014127439 A JP2014127439 A JP 2014127439A JP 6300662 B2 JP6300662 B2 JP 6300662B2
Authority
JP
Japan
Prior art keywords
silicon substrate
semiconductor device
silicon
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014127439A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016006840A5 (https=
JP2016006840A (ja
Inventor
晴久 齊藤
晴久 齊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Corp filed Critical Olympus Corp
Priority to JP2014127439A priority Critical patent/JP6300662B2/ja
Priority to PCT/JP2015/061992 priority patent/WO2015194249A1/ja
Publication of JP2016006840A publication Critical patent/JP2016006840A/ja
Priority to US15/352,927 priority patent/US9954027B2/en
Publication of JP2016006840A5 publication Critical patent/JP2016006840A5/ja
Application granted granted Critical
Publication of JP6300662B2 publication Critical patent/JP6300662B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Weting (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
JP2014127439A 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法 Expired - Fee Related JP6300662B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014127439A JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法
PCT/JP2015/061992 WO2015194249A1 (ja) 2014-06-20 2015-04-20 半導体装置および半導体装置の製造方法
US15/352,927 US9954027B2 (en) 2014-06-20 2016-11-16 Image pickup device and manufacturing method for image pickup device by stacking/bonding of crystalline silicon substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014127439A JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2016006840A JP2016006840A (ja) 2016-01-14
JP2016006840A5 JP2016006840A5 (https=) 2017-07-27
JP6300662B2 true JP6300662B2 (ja) 2018-03-28

Family

ID=54935246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014127439A Expired - Fee Related JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法

Country Status (3)

Country Link
US (1) US9954027B2 (https=)
JP (1) JP6300662B2 (https=)
WO (1) WO2015194249A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12176348B2 (en) * 2021-11-30 2024-12-24 International Business Machines Corporation Self-aligned hybrid substrate stacked gate-all-around transistors
US20230268372A1 (en) * 2022-02-21 2023-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685819B2 (ja) * 1988-03-31 1997-12-03 株式会社東芝 誘電体分離半導体基板とその製造方法
JPH07297377A (ja) * 1994-04-21 1995-11-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
EP1569275B1 (en) * 2002-11-18 2011-03-30 Hamamatsu Photonics K.K. Backside-illuminated photodiode array, method for manufacturing same, and semiconductor device
US7810740B2 (en) 2002-11-18 2010-10-12 Hamamatsu Photonics K.K. Back illuminated photodiode array, manufacturing method and semiconductor device thereof
JP2005053066A (ja) * 2003-08-04 2005-03-03 Seiko Epson Corp ノズルプレートの製造方法、インクジェットヘッド及びインクジェット記録装置
JP5577965B2 (ja) * 2010-09-02 2014-08-27 ソニー株式会社 半導体装置、および、その製造方法、電子機器
JP5581954B2 (ja) * 2010-10-07 2014-09-03 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2012094720A (ja) * 2010-10-27 2012-05-17 Sony Corp 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器
JP5665599B2 (ja) * 2011-02-24 2015-02-04 株式会社東芝 半導体装置および半導体装置の製造方法
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。
CN103460385B (zh) * 2011-03-31 2016-05-04 富士胶片株式会社 固态成像装置和固态成像装置的制造方法
JP2013062382A (ja) 2011-09-13 2013-04-04 Toshiba Corp 半導体装置およびその製造方法
GB201121659D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices

Also Published As

Publication number Publication date
WO2015194249A1 (ja) 2015-12-23
US20170062506A1 (en) 2017-03-02
US9954027B2 (en) 2018-04-24
JP2016006840A (ja) 2016-01-14

Similar Documents

Publication Publication Date Title
KR102524686B1 (ko) 반도체 장치, 및, 반도체 장치의 제조 방법
JP6335099B2 (ja) 半導体装置および半導体装置の製造方法
CN102569328B (zh) 感光成像装置、半导体器件的制作方法
TWI656657B (zh) 太陽能電池模組中之太陽能電池之互連
CN107359210B (zh) 用于制造光电转换设备的方法
CN102651379B (zh) 半导体装置及半导体装置的制造方法
JP2009181981A (ja) 半導体装置の製造方法および半導体装置
KR20160059738A (ko) 프리패키지 및 이를 사용한 반도체 패키지의 제조 방법
TWI453905B (zh) Manufacturing method of semiconductor device
KR20150088633A (ko) 적층형 이미지 센서
JP2013062382A (ja) 半導体装置およびその製造方法
CN107634074B (zh) 防止划片损伤的cmos图像传感器结构及其制作方法
US9893116B2 (en) Manufacturing method of electronic device and manufacturing method of semiconductor device
TW202301451A (zh) 半導體裝置和製造半導體裝置的方法
JP5226228B2 (ja) 半導体装置の製造方法、及び、半導体装置
JP2005322745A (ja) 半導体素子、半導体素子の製造方法、固体撮像素子、並びに固体撮像素子の製造方法
JP6300662B2 (ja) 半導体装置および半導体装置の製造方法
US9312292B2 (en) Back side illumination image sensor and manufacturing method thereof
JP2009099875A (ja) 半導体装置の製造方法
CN105453270A (zh) 芯片驱动性能改善的背光图像传感器芯片
JP2015211090A (ja) 半導体装置の製造方法
CN102386198A (zh) 制造光学传感器的方法
JP2016006840A5 (https=)
KR101439311B1 (ko) 웨이퍼의 패드 형성 방법
JP2020074484A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170613

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170613

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20170614

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170912

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171017

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20171018

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180227

R151 Written notification of patent or utility model registration

Ref document number: 6300662

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees