JP6291593B2 - Ｉｔｏスパッタリングターゲット及びその製造方法並びにｉｔｏ透明導電膜の製造方法 - Google Patents
Ｉｔｏスパッタリングターゲット及びその製造方法並びにｉｔｏ透明導電膜の製造方法 Download PDFInfo
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- JP6291593B2 JP6291593B2 JP2016557791A JP2016557791A JP6291593B2 JP 6291593 B2 JP6291593 B2 JP 6291593B2 JP 2016557791 A JP2016557791 A JP 2016557791A JP 2016557791 A JP2016557791 A JP 2016557791A JP 6291593 B2 JP6291593 B2 JP 6291593B2
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- sintered body
- tin oxide
- temperature
- rich phase
- powder
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- 238000005477 sputtering target Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000005245 sintering Methods 0.000 claims description 130
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 126
- 229910001887 tin oxide Inorganic materials 0.000 claims description 126
- 239000000843 powder Substances 0.000 claims description 103
- 238000004544 sputter deposition Methods 0.000 claims description 85
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 84
- 229910052760 oxygen Inorganic materials 0.000 claims description 83
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 74
- 239000001301 oxygen Substances 0.000 claims description 74
- 239000013078 crystal Substances 0.000 claims description 52
- 229910052786 argon Inorganic materials 0.000 claims description 42
- 238000005452 bending Methods 0.000 claims description 41
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 38
- 238000001816 cooling Methods 0.000 claims description 37
- 229910052718 tin Inorganic materials 0.000 claims description 21
- 239000011148 porous material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 229910003437 indium oxide Inorganic materials 0.000 claims description 14
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 121
- 239000010408 film Substances 0.000 description 79
- 238000002425 crystallisation Methods 0.000 description 32
- 230000008025 crystallization Effects 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 23
- 238000002834 transmittance Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 18
- 239000002245 particle Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 239000000523 sample Substances 0.000 description 11
- 238000010298 pulverizing process Methods 0.000 description 10
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000002950 deficient Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000004453 electron probe microanalysis Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014226601 | 2014-11-07 | ||
| JP2014226601 | 2014-11-07 | ||
| PCT/JP2015/081123 WO2016072441A1 (ja) | 2014-11-07 | 2015-11-05 | Ｉｔｏスパッタリングターゲット及びその製造方法並びにｉｔｏ透明導電膜及びｉｔｏ透明導電膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2016072441A1 JPWO2016072441A1 (ja) | 2017-04-27 |
| JP6291593B2 true JP6291593B2 (ja) | 2018-03-14 |
Family
ID=55909165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016557791A Active JP6291593B2 (ja) | 2014-11-07 | 2015-11-05 | Ｉｔｏスパッタリングターゲット及びその製造方法並びにｉｔｏ透明導電膜の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6291593B2 (zh) |
| KR (2) | KR20180093140A (zh) |
| CN (1) | CN106460161B (zh) |
| TW (1) | TWI594970B (zh) |
| WO (1) | WO2016072441A1 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6724057B2 (ja) * | 2018-03-30 | 2020-07-15 | Ｊｘ金属株式会社 | スパッタリングターゲット部材 |
| JP2020143359A (ja) * | 2019-03-08 | 2020-09-10 | Ｊｘ金属株式会社 | スパッタリングターゲット部材の製造方法及びスパッタリングターゲット部材 |
| JP7158102B2 (ja) * | 2019-03-29 | 2022-10-21 | Ｊｘ金属株式会社 | Ｉｔｏスパッタリングターゲット及びその製造方法並びにｉｔｏ透明導電膜及びｉｔｏ透明導電膜の製造方法 |
| CN114007856A (zh) | 2019-06-27 | 2022-02-01 | 日东电工株式会社 | 透明导电性薄膜 |
| JP6992213B2 (ja) | 2020-02-03 | 2022-02-07 | 日東電工株式会社 | 積層体、タッチセンサ、調光素子、光電変換素子、熱線制御部材、アンテナ、電磁波シールド部材および画像表示装置 |
| KR20230028599A (ko) * | 2020-02-03 | 2023-02-28 | 닛토덴코 가부시키가이샤 | 투명 도전층, 투명 도전성 시트, 터치 센서, 조광 소자, 광전 변환 소자, 열선 제어 부재, 안테나, 전자파 실드 부재 및 화상 표시 장치 |
| KR20220155281A (ko) * | 2020-03-19 | 2022-11-22 | 닛토덴코 가부시키가이샤 | 투명 도전성 필름, 및 투명 도전성 필름의 제조 방법 |
| CN113735565B (zh) * | 2021-08-30 | 2022-11-15 | 深圳市众诚达应用材料科技有限公司 | 低锡含量ito溅射靶材、制备方法及薄膜太阳能电池 |
| WO2024105854A1 (ja) * | 2022-11-17 | 2024-05-23 | 日本電信電話株式会社 | リチウム二次電池、及び、リチウム二次電池の製造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4934926A (zh) | 1972-08-05 | 1974-03-30 | ||
| JPS503759A (zh) | 1973-05-15 | 1975-01-16 | ||
| JPS526983A (en) | 1975-07-08 | 1977-01-19 | Tokyo Shibaura Electric Co | Locking device for key |
| JP2750483B2 (ja) | 1991-11-26 | 1998-05-13 | 株式会社 ジャパンエナジー | Ｉｔｏスパッタリングターゲット |
| JP3693191B2 (ja) * | 1995-10-30 | 2005-09-07 | 日立金属株式会社 | インジウム酸化物系焼結体およびその製造方法ならびにインジウム酸化物系ターゲット |
| JPH10147862A (ja) | 1996-11-15 | 1998-06-02 | Sumitomo Metal Mining Co Ltd | 酸化インジウム・酸化錫焼結体 |
| JP2000113732A (ja) * | 1998-06-25 | 2000-04-21 | Asahi Glass Co Ltd | 透明導電膜とその製造方法、透明導電膜付き基板およびタッチパネル |
| JP2000233969A (ja) | 1998-12-08 | 2000-08-29 | Tosoh Corp | Ｉｔｏスパッタリングターゲットおよび透明導電膜の製造方法 |
| KR100603128B1 (ko) * | 1999-05-10 | 2006-07-20 | 닛코킨조쿠 가부시키가이샤 | 스퍼터링 타겟트 |
| KR100581138B1 (ko) | 2001-03-12 | 2006-05-16 | 가부시키 가이샤 닛코 마테리알즈 | 아이티오 스퍼터링 타겟트용 산화 주석 분말의 제조방법 및 아이티오막 형성용 소결체 스퍼터링 타겟트의 제조방법 |
| JP3988411B2 (ja) | 2001-06-22 | 2007-10-10 | 住友金属鉱山株式会社 | Ｉｔｏ焼結体とその製造方法、及びそれを用いたｉｔｏスパッタリングターゲット |
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| JP4196805B2 (ja) * | 2003-10-23 | 2008-12-17 | 住友金属鉱山株式会社 | 酸化インジウム系ターゲットおよびその製造方法 |
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| KR101580321B1 (ko) * | 2009-04-29 | 2015-12-23 | 삼성전기주식회사 | 티탄산바륨의 제조방법 및 그 방법에 의하여 제조된 티탄산바륨 |
| JP5515554B2 (ja) * | 2009-09-18 | 2014-06-11 | 凸版印刷株式会社 | 透明導電性薄膜の製造方法 |
| JP2012126937A (ja) | 2010-12-13 | 2012-07-05 | Sumitomo Metal Mining Co Ltd | Ｉｔｏスパッタリングターゲットとその製造方法 |
| CN104303240B (zh) * | 2012-05-17 | 2017-03-01 | 株式会社钟化 | 带有透明电极的基板及其制造方法以及触摸面板 |
| WO2014156234A1 (ja) * | 2013-03-29 | 2014-10-02 | Jx日鉱日石金属株式会社 | Ｉｔｏスパッタリングターゲット及びその製造方法 |
| CN107253855A (zh) * | 2014-02-18 | 2017-10-17 | 三井金属矿业株式会社 | Ito 溅射靶材及其制造方法 |
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