JP6289181B2 - 描画装置、及び、物品の製造方法 - Google Patents

描画装置、及び、物品の製造方法 Download PDF

Info

Publication number
JP6289181B2
JP6289181B2 JP2014049317A JP2014049317A JP6289181B2 JP 6289181 B2 JP6289181 B2 JP 6289181B2 JP 2014049317 A JP2014049317 A JP 2014049317A JP 2014049317 A JP2014049317 A JP 2014049317A JP 6289181 B2 JP6289181 B2 JP 6289181B2
Authority
JP
Japan
Prior art keywords
charged particle
substrate
particle beams
drawing apparatus
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014049317A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015029045A5 (enExample
JP2015029045A (ja
Inventor
村木　真人
真人 村木
森田　知之
知之 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014049317A priority Critical patent/JP6289181B2/ja
Priority to TW103119550A priority patent/TWI551955B/zh
Priority to KR1020140074142A priority patent/KR101721070B1/ko
Priority to CN201410282724.XA priority patent/CN104253011B/zh
Priority to US14/312,908 priority patent/US9171698B2/en
Publication of JP2015029045A publication Critical patent/JP2015029045A/ja
Publication of JP2015029045A5 publication Critical patent/JP2015029045A5/ja
Application granted granted Critical
Publication of JP6289181B2 publication Critical patent/JP6289181B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31766—Continuous moving of wafer

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
JP2014049317A 2013-06-26 2014-03-12 描画装置、及び、物品の製造方法 Expired - Fee Related JP6289181B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014049317A JP6289181B2 (ja) 2013-06-26 2014-03-12 描画装置、及び、物品の製造方法
TW103119550A TWI551955B (zh) 2013-06-26 2014-06-05 繪畫裝置和物品的製造方法
KR1020140074142A KR101721070B1 (ko) 2013-06-26 2014-06-18 묘화 장치 및 물품의 제조 방법
CN201410282724.XA CN104253011B (zh) 2013-06-26 2014-06-23 绘画装置和制造物品的方法
US14/312,908 US9171698B2 (en) 2013-06-26 2014-06-24 Drawing apparatus, and method of manufacturing article

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013134211 2013-06-26
JP2013134211 2013-06-26
JP2014049317A JP6289181B2 (ja) 2013-06-26 2014-03-12 描画装置、及び、物品の製造方法

Publications (3)

Publication Number Publication Date
JP2015029045A JP2015029045A (ja) 2015-02-12
JP2015029045A5 JP2015029045A5 (enExample) 2017-04-20
JP6289181B2 true JP6289181B2 (ja) 2018-03-07

Family

ID=52116007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014049317A Expired - Fee Related JP6289181B2 (ja) 2013-06-26 2014-03-12 描画装置、及び、物品の製造方法

Country Status (5)

Country Link
US (1) US9171698B2 (enExample)
JP (1) JP6289181B2 (enExample)
KR (1) KR101721070B1 (enExample)
CN (1) CN104253011B (enExample)
TW (1) TWI551955B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627632B2 (ja) * 2016-02-08 2020-01-08 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7002837B2 (ja) * 2016-10-26 2022-01-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6665809B2 (ja) * 2017-02-24 2020-03-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7189729B2 (ja) * 2018-10-30 2022-12-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法
JP7180515B2 (ja) * 2019-04-11 2022-11-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3394237B2 (ja) * 2000-08-10 2003-04-07 株式会社日立製作所 荷電粒子ビーム露光方法及び装置
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
CN101194208B (zh) * 2005-04-15 2012-09-05 麦克罗尼克激光系统公司 用于多曝光射束光刻装置的方法
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5530688B2 (ja) * 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
CN102043344B (zh) * 2009-10-15 2013-07-17 联华电子股份有限公司 曝光机台的监测方法
WO2011078968A2 (en) * 2009-12-26 2011-06-30 D2S, Inc. Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes
US20120085919A1 (en) * 2010-10-08 2012-04-12 Shinichi Kojima Apparatus and methods for pattern generation
NL2007818A (en) * 2010-12-20 2012-06-21 Asml Netherlands Bv Method of updating calibration data and a device manufacturing method.
JP5859778B2 (ja) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2013165121A (ja) * 2012-02-09 2013-08-22 Canon Inc 描画装置、生成方法、プログラム及び物品の製造方法
JP6193611B2 (ja) * 2013-04-30 2017-09-06 キヤノン株式会社 描画装置、及び物品の製造方法
JP6212299B2 (ja) * 2013-06-26 2017-10-11 キヤノン株式会社 ブランキング装置、描画装置、および物品の製造方法

Also Published As

Publication number Publication date
TWI551955B (zh) 2016-10-01
KR101721070B1 (ko) 2017-03-29
JP2015029045A (ja) 2015-02-12
CN104253011A (zh) 2014-12-31
US9171698B2 (en) 2015-10-27
CN104253011B (zh) 2018-04-03
US20150004807A1 (en) 2015-01-01
KR20150001632A (ko) 2015-01-06
TW201502715A (zh) 2015-01-16

Similar Documents

Publication Publication Date Title
JP6195349B2 (ja) 描画装置、描画方法、および物品の製造方法
JP6289181B2 (ja) 描画装置、及び、物品の製造方法
JP6587887B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2019176047A (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2013074088A (ja) 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法
JP7002837B2 (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2019033117A (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US20160284509A1 (en) Charged particle beam writing apparatus and charged particle beam writing method
US12040157B2 (en) Pattern data processing for programmable direct-write apparatus
JP6577787B2 (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US20140154629A1 (en) Lithography apparatus and method of manufacturing article
JP2014216631A (ja) 描画装置、及び物品の製造方法
JP6193611B2 (ja) 描画装置、及び物品の製造方法
JP2015035563A (ja) 描画データの生成方法、処理装置、プログラム、描画装置、および物品の製造方法
KR102810945B1 (ko) 멀티 하전 입자 빔 묘화 장치 및 멀티 하전 입자 빔 묘화 방법
JP2013165121A (ja) 描画装置、生成方法、プログラム及び物品の製造方法
US20140162191A1 (en) Drawing apparatus, and method of manufacturing article
US20130199719A1 (en) Drawing apparatus, and method of manufacturing article
JP6230295B2 (ja) 描画装置及び物品の製造方法
JP2016086101A (ja) リソグラフィ装置、および物品の製造方法
JP2016115811A (ja) 描画装置、及び物品の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170313

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170313

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20171228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180206

R151 Written notification of patent or utility model registration

Ref document number: 6289181

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees