TWI551955B - 繪畫裝置和物品的製造方法 - Google Patents

繪畫裝置和物品的製造方法 Download PDF

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Publication number
TWI551955B
TWI551955B TW103119550A TW103119550A TWI551955B TW I551955 B TWI551955 B TW I551955B TW 103119550 A TW103119550 A TW 103119550A TW 103119550 A TW103119550 A TW 103119550A TW I551955 B TWI551955 B TW I551955B
Authority
TW
Taiwan
Prior art keywords
charged particle
substrate
particle beams
target
dose
Prior art date
Application number
TW103119550A
Other languages
English (en)
Chinese (zh)
Other versions
TW201502715A (zh
Inventor
村木真人
森田知之
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201502715A publication Critical patent/TW201502715A/zh
Application granted granted Critical
Publication of TWI551955B publication Critical patent/TWI551955B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31766—Continuous moving of wafer

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
TW103119550A 2013-06-26 2014-06-05 繪畫裝置和物品的製造方法 TWI551955B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013134211 2013-06-26
JP2014049317A JP6289181B2 (ja) 2013-06-26 2014-03-12 描画装置、及び、物品の製造方法

Publications (2)

Publication Number Publication Date
TW201502715A TW201502715A (zh) 2015-01-16
TWI551955B true TWI551955B (zh) 2016-10-01

Family

ID=52116007

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103119550A TWI551955B (zh) 2013-06-26 2014-06-05 繪畫裝置和物品的製造方法

Country Status (5)

Country Link
US (1) US9171698B2 (enExample)
JP (1) JP6289181B2 (enExample)
KR (1) KR101721070B1 (enExample)
CN (1) CN104253011B (enExample)
TW (1) TWI551955B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627632B2 (ja) * 2016-02-08 2020-01-08 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7002837B2 (ja) * 2016-10-26 2022-01-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6665809B2 (ja) * 2017-02-24 2020-03-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7189729B2 (ja) * 2018-10-30 2022-12-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法
JP7180515B2 (ja) * 2019-04-11 2022-11-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201142907A (en) * 2009-12-26 2011-12-01 D2S Inc Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes
TW201229680A (en) * 2010-10-08 2012-07-16 Kla Tencor Corp Apparatus and methods for pattern generation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3394237B2 (ja) * 2000-08-10 2003-04-07 株式会社日立製作所 荷電粒子ビーム露光方法及び装置
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
CN101194208B (zh) * 2005-04-15 2012-09-05 麦克罗尼克激光系统公司 用于多曝光射束光刻装置的方法
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5530688B2 (ja) * 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
CN102043344B (zh) * 2009-10-15 2013-07-17 联华电子股份有限公司 曝光机台的监测方法
NL2007818A (en) * 2010-12-20 2012-06-21 Asml Netherlands Bv Method of updating calibration data and a device manufacturing method.
JP5859778B2 (ja) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2013165121A (ja) * 2012-02-09 2013-08-22 Canon Inc 描画装置、生成方法、プログラム及び物品の製造方法
JP6193611B2 (ja) * 2013-04-30 2017-09-06 キヤノン株式会社 描画装置、及び物品の製造方法
JP6212299B2 (ja) * 2013-06-26 2017-10-11 キヤノン株式会社 ブランキング装置、描画装置、および物品の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201142907A (en) * 2009-12-26 2011-12-01 D2S Inc Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes
TW201229680A (en) * 2010-10-08 2012-07-16 Kla Tencor Corp Apparatus and methods for pattern generation

Also Published As

Publication number Publication date
KR101721070B1 (ko) 2017-03-29
JP2015029045A (ja) 2015-02-12
CN104253011A (zh) 2014-12-31
US9171698B2 (en) 2015-10-27
CN104253011B (zh) 2018-04-03
US20150004807A1 (en) 2015-01-01
KR20150001632A (ko) 2015-01-06
JP6289181B2 (ja) 2018-03-07
TW201502715A (zh) 2015-01-16

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