CN104253011B - 绘画装置和制造物品的方法 - Google Patents
绘画装置和制造物品的方法 Download PDFInfo
- Publication number
- CN104253011B CN104253011B CN201410282724.XA CN201410282724A CN104253011B CN 104253011 B CN104253011 B CN 104253011B CN 201410282724 A CN201410282724 A CN 201410282724A CN 104253011 B CN104253011 B CN 104253011B
- Authority
- CN
- China
- Prior art keywords
- charged particle
- particle beam
- substrate
- target location
- dosage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000006073 displacement reaction Methods 0.000 claims abstract description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 73
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 8
- 238000012937 correction Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 229910025794 LaB6 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31766—Continuous moving of wafer
Landscapes
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electron Beam Exposure (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013134211 | 2013-06-26 | ||
| JP2013-134211 | 2013-06-26 | ||
| JP2014-049317 | 2014-03-12 | ||
| JP2014049317A JP6289181B2 (ja) | 2013-06-26 | 2014-03-12 | 描画装置、及び、物品の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104253011A CN104253011A (zh) | 2014-12-31 |
| CN104253011B true CN104253011B (zh) | 2018-04-03 |
Family
ID=52116007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410282724.XA Expired - Fee Related CN104253011B (zh) | 2013-06-26 | 2014-06-23 | 绘画装置和制造物品的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9171698B2 (enExample) |
| JP (1) | JP6289181B2 (enExample) |
| KR (1) | KR101721070B1 (enExample) |
| CN (1) | CN104253011B (enExample) |
| TW (1) | TWI551955B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6627632B2 (ja) * | 2016-02-08 | 2020-01-08 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| JP7002837B2 (ja) * | 2016-10-26 | 2022-01-20 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| JP6665809B2 (ja) * | 2017-02-24 | 2020-03-13 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びその調整方法 |
| JP6854215B2 (ja) * | 2017-08-02 | 2021-04-07 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| JP7189729B2 (ja) | 2018-10-30 | 2022-12-14 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法 |
| JP7180515B2 (ja) * | 2019-04-11 | 2022-11-30 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023492A (zh) * | 2009-09-18 | 2011-04-20 | 纽富来科技股份有限公司 | 带电粒子束描画装置及其邻近效应校正方法 |
| CN102043344A (zh) * | 2009-10-15 | 2011-05-04 | 联华电子股份有限公司 | 曝光机台的监测方法 |
| CN102540784A (zh) * | 2010-12-20 | 2012-07-04 | Asml荷兰有限公司 | 更新校准数据的方法和器件制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3394237B2 (ja) * | 2000-08-10 | 2003-04-07 | 株式会社日立製作所 | 荷電粒子ビーム露光方法及び装置 |
| GB2414111B (en) * | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
| KR100898848B1 (ko) * | 2005-04-15 | 2009-05-21 | 마이크로닉 레이저 시스템즈 에이비 | 다중 노출 광선 리소그래피 툴 방법 |
| JP2008004596A (ja) * | 2006-06-20 | 2008-01-10 | Canon Inc | 荷電粒子線描画方法、露光装置、及びデバイス製造方法 |
| JP5792189B2 (ja) * | 2009-12-26 | 2015-10-07 | ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． | 複数の露光経路を利用して荷電粒子ビームリソグラフィを用いてパターンをフラクチャリングするための方法およびシステム |
| US20120085919A1 (en) * | 2010-10-08 | 2012-04-12 | Shinichi Kojima | Apparatus and methods for pattern generation |
| JP5859778B2 (ja) * | 2011-09-01 | 2016-02-16 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| JP2013165121A (ja) * | 2012-02-09 | 2013-08-22 | Canon Inc | 描画装置、生成方法、プログラム及び物品の製造方法 |
| JP6193611B2 (ja) * | 2013-04-30 | 2017-09-06 | キヤノン株式会社 | 描画装置、及び物品の製造方法 |
| JP6212299B2 (ja) * | 2013-06-26 | 2017-10-11 | キヤノン株式会社 | ブランキング装置、描画装置、および物品の製造方法 |
-
2014
- 2014-03-12 JP JP2014049317A patent/JP6289181B2/ja not_active Expired - Fee Related
- 2014-06-05 TW TW103119550A patent/TWI551955B/zh not_active IP Right Cessation
- 2014-06-18 KR KR1020140074142A patent/KR101721070B1/ko not_active Expired - Fee Related
- 2014-06-23 CN CN201410282724.XA patent/CN104253011B/zh not_active Expired - Fee Related
- 2014-06-24 US US14/312,908 patent/US9171698B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023492A (zh) * | 2009-09-18 | 2011-04-20 | 纽富来科技股份有限公司 | 带电粒子束描画装置及其邻近效应校正方法 |
| CN102043344A (zh) * | 2009-10-15 | 2011-05-04 | 联华电子股份有限公司 | 曝光机台的监测方法 |
| CN102540784A (zh) * | 2010-12-20 | 2012-07-04 | Asml荷兰有限公司 | 更新校准数据的方法和器件制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6289181B2 (ja) | 2018-03-07 |
| KR101721070B1 (ko) | 2017-03-29 |
| CN104253011A (zh) | 2014-12-31 |
| US20150004807A1 (en) | 2015-01-01 |
| KR20150001632A (ko) | 2015-01-06 |
| US9171698B2 (en) | 2015-10-27 |
| TWI551955B (zh) | 2016-10-01 |
| JP2015029045A (ja) | 2015-02-12 |
| TW201502715A (zh) | 2015-01-16 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180403 Termination date: 20210623 |
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| CF01 | Termination of patent right due to non-payment of annual fee |