KR101721070B1 - 묘화 장치 및 물품의 제조 방법 - Google Patents

묘화 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR101721070B1
KR101721070B1 KR1020140074142A KR20140074142A KR101721070B1 KR 101721070 B1 KR101721070 B1 KR 101721070B1 KR 1020140074142 A KR1020140074142 A KR 1020140074142A KR 20140074142 A KR20140074142 A KR 20140074142A KR 101721070 B1 KR101721070 B1 KR 101721070B1
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KR
South Korea
Prior art keywords
charged particle
substrate
particle beams
positions
target position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020140074142A
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English (en)
Korean (ko)
Other versions
KR20150001632A (ko
Inventor
마사토 무라키
도모유키 모리타
Original Assignee
캐논 가부시끼가이샤
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20150001632A publication Critical patent/KR20150001632A/ko
Application granted granted Critical
Publication of KR101721070B1 publication Critical patent/KR101721070B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31766—Continuous moving of wafer

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  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020140074142A 2013-06-26 2014-06-18 묘화 장치 및 물품의 제조 방법 Expired - Fee Related KR101721070B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2013-134211 2013-06-26
JP2013134211 2013-06-26
JPJP-P-2014-049317 2014-03-12
JP2014049317A JP6289181B2 (ja) 2013-06-26 2014-03-12 描画装置、及び、物品の製造方法

Publications (2)

Publication Number Publication Date
KR20150001632A KR20150001632A (ko) 2015-01-06
KR101721070B1 true KR101721070B1 (ko) 2017-03-29

Family

ID=52116007

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140074142A Expired - Fee Related KR101721070B1 (ko) 2013-06-26 2014-06-18 묘화 장치 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US9171698B2 (enExample)
JP (1) JP6289181B2 (enExample)
KR (1) KR101721070B1 (enExample)
CN (1) CN104253011B (enExample)
TW (1) TWI551955B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627632B2 (ja) * 2016-02-08 2020-01-08 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7002837B2 (ja) * 2016-10-26 2022-01-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6665809B2 (ja) * 2017-02-24 2020-03-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7189729B2 (ja) 2018-10-30 2022-12-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法
JP7180515B2 (ja) * 2019-04-11 2022-11-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3394237B2 (ja) * 2000-08-10 2003-04-07 株式会社日立製作所 荷電粒子ビーム露光方法及び装置
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
KR100898848B1 (ko) * 2005-04-15 2009-05-21 마이크로닉 레이저 시스템즈 에이비 다중 노출 광선 리소그래피 툴 방법
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5530688B2 (ja) * 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
CN102043344B (zh) * 2009-10-15 2013-07-17 联华电子股份有限公司 曝光机台的监测方法
JP5792189B2 (ja) * 2009-12-26 2015-10-07 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 複数の露光経路を利用して荷電粒子ビームリソグラフィを用いてパターンをフラクチャリングするための方法およびシステム
US20120085919A1 (en) * 2010-10-08 2012-04-12 Shinichi Kojima Apparatus and methods for pattern generation
NL2007818A (en) * 2010-12-20 2012-06-21 Asml Netherlands Bv Method of updating calibration data and a device manufacturing method.
JP5859778B2 (ja) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2013165121A (ja) * 2012-02-09 2013-08-22 Canon Inc 描画装置、生成方法、プログラム及び物品の製造方法
JP6193611B2 (ja) * 2013-04-30 2017-09-06 キヤノン株式会社 描画装置、及び物品の製造方法
JP6212299B2 (ja) * 2013-06-26 2017-10-11 キヤノン株式会社 ブランキング装置、描画装置、および物品の製造方法

Also Published As

Publication number Publication date
CN104253011B (zh) 2018-04-03
JP6289181B2 (ja) 2018-03-07
CN104253011A (zh) 2014-12-31
US20150004807A1 (en) 2015-01-01
KR20150001632A (ko) 2015-01-06
US9171698B2 (en) 2015-10-27
TWI551955B (zh) 2016-10-01
JP2015029045A (ja) 2015-02-12
TW201502715A (zh) 2015-01-16

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