JP6278535B2 - イミダゾール化合物と、ビスエポキシドと、ハロベンジル化合物との反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 - Google Patents
イミダゾール化合物と、ビスエポキシドと、ハロベンジル化合物との反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 Download PDFInfo
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- JP6278535B2 JP6278535B2 JP2016150622A JP2016150622A JP6278535B2 JP 6278535 B2 JP6278535 B2 JP 6278535B2 JP 2016150622 A JP2016150622 A JP 2016150622A JP 2016150622 A JP2016150622 A JP 2016150622A JP 6278535 B2 JP6278535 B2 JP 6278535B2
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- Prior art keywords
- height
- copper
- feature
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- alkyl
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D233/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings
- C07D233/54—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members
- C07D233/56—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
- C07D303/02—Compounds containing oxirane rings
- C07D303/04—Compounds containing oxirane rings containing only hydrogen and carbon atoms in addition to the ring oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Epoxy Resins (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562201867P | 2015-08-06 | 2015-08-06 | |
| US62/201,867 | 2015-08-06 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017036502A JP2017036502A (ja) | 2017-02-16 |
| JP2017036502A5 JP2017036502A5 (enExample) | 2018-01-18 |
| JP6278535B2 true JP6278535B2 (ja) | 2018-02-14 |
Family
ID=56567498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016150622A Active JP6278535B2 (ja) | 2015-08-06 | 2016-07-29 | イミダゾール化合物と、ビスエポキシドと、ハロベンジル化合物との反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10006136B2 (enExample) |
| EP (1) | EP3128044B1 (enExample) |
| JP (1) | JP6278535B2 (enExample) |
| KR (1) | KR101779408B1 (enExample) |
| CN (1) | CN106435662B (enExample) |
| TW (1) | TWI600804B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017036501A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | アルファアミノ酸とビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10190228B2 (en) * | 2016-03-29 | 2019-01-29 | Rohm And Haas Electronic Materials Llc | Copper electroplating baths and electroplating methods capable of electroplating megasized photoresist defined features |
| US10508349B2 (en) * | 2016-06-27 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of pyrazole compounds and bisepoxides |
| TWI762731B (zh) * | 2017-11-08 | 2022-05-01 | 美商羅門哈斯電子材料有限公司 | 銅電鍍組合物及在基板上電鍍銅之方法 |
| TWI703148B (zh) * | 2017-11-08 | 2020-09-01 | 美商羅門哈斯電子材料有限公司 | 銅電鍍組合物及在基板上電鍍銅之方法 |
| US20190259722A1 (en) * | 2018-02-21 | 2019-08-22 | Rohm And Haas Electronic Materials Llc | Copper pillars having improved integrity and methods of making the same |
| JP7533916B2 (ja) * | 2019-02-01 | 2024-08-14 | 石原ケミカル株式会社 | 電気銅メッキ又は銅合金メッキ浴 |
| WO2020158418A1 (ja) * | 2019-02-01 | 2020-08-06 | 石原ケミカル株式会社 | 電気銅メッキ又は銅合金メッキ浴 |
| CN115894908B (zh) * | 2021-09-30 | 2025-06-06 | 华为技术有限公司 | 聚合物、整平剂及其制备方法、电镀液和电镀方法 |
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| JPS52130437A (en) * | 1976-04-27 | 1977-11-01 | Dipsol Chem | Brightener in alkalline zinc plating bath |
| JPH04317798A (ja) * | 1991-04-15 | 1992-11-09 | Mitsubishi Kasei Polytec Co | 活性汚泥の異常現象防止剤及び異常現象防止方法 |
| JPH0997791A (ja) | 1995-09-27 | 1997-04-08 | Internatl Business Mach Corp <Ibm> | バンプ構造、バンプの形成方法、実装接続体 |
| US6578754B1 (en) | 2000-04-27 | 2003-06-17 | Advanpack Solutions Pte. Ltd. | Pillar connections for semiconductor chips and method of manufacture |
| US6610192B1 (en) | 2000-11-02 | 2003-08-26 | Shipley Company, L.L.C. | Copper electroplating |
| JP4392168B2 (ja) | 2001-05-09 | 2009-12-24 | 荏原ユージライト株式会社 | 銅めっき浴およびこれを用いる基板のめっき方法 |
| US7128822B2 (en) | 2003-06-04 | 2006-10-31 | Shipley Company, L.L.C. | Leveler compounds |
| US7276801B2 (en) | 2003-09-22 | 2007-10-02 | Intel Corporation | Designs and methods for conductive bumps |
| US7462942B2 (en) | 2003-10-09 | 2008-12-09 | Advanpack Solutions Pte Ltd | Die pillar structures and a method of their formation |
| TW200613586A (en) | 2004-07-22 | 2006-05-01 | Rohm & Haas Elect Mat | Leveler compounds |
| EP1741804B1 (en) | 2005-07-08 | 2016-04-27 | Rohm and Haas Electronic Materials, L.L.C. | Electrolytic copper plating method |
| US7829380B2 (en) | 2006-10-31 | 2010-11-09 | Qimonda Ag | Solder pillar bumping and a method of making the same |
| EP2199315B1 (en) | 2008-12-19 | 2013-12-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
| US8592995B2 (en) | 2009-07-02 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for adhesion of intermetallic compound (IMC) on Cu pillar bump |
| JP5471276B2 (ja) | 2009-10-15 | 2014-04-16 | 上村工業株式会社 | 電気銅めっき浴及び電気銅めっき方法 |
| EP2504396B1 (en) | 2009-11-27 | 2021-02-24 | Basf Se | Composition for copper electroplating comprising leveling agent |
| US8268157B2 (en) | 2010-03-15 | 2012-09-18 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
| TWI500823B (zh) | 2010-03-18 | 2015-09-21 | Basf Se | 包含整平劑之金屬電鍍用組合物 |
| KR101829866B1 (ko) | 2010-06-01 | 2018-02-20 | 바스프 에스이 | 레벨링제를 포함하는 금속 전기도금용 조성물 |
| EP2392694A1 (en) * | 2010-06-02 | 2011-12-07 | ATOTECH Deutschland GmbH | Method for etching of copper and copper alloys |
| US8546254B2 (en) | 2010-08-19 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps using patterned anodes |
| JP2012127003A (ja) * | 2010-12-15 | 2012-07-05 | Rohm & Haas Electronic Materials Llc | 銅層を均一にする電気めっき方法 |
| US8669137B2 (en) | 2011-04-01 | 2014-03-11 | International Business Machines Corporation | Copper post solder bumps on substrate |
| SG194983A1 (en) * | 2011-06-01 | 2013-12-30 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| US8454815B2 (en) | 2011-10-24 | 2013-06-04 | Rohm And Haas Electronics Materials Llc | Plating bath and method |
| TWI637467B (zh) | 2012-05-24 | 2018-10-01 | 欣興電子股份有限公司 | 中介基材及其製作方法 |
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| US9598787B2 (en) | 2013-03-14 | 2017-03-21 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
| US8957524B2 (en) | 2013-03-15 | 2015-02-17 | Globalfoundries Inc. | Pillar structure for use in packaging integrated circuit products and methods of making such a pillar structure |
| US9439294B2 (en) * | 2014-04-16 | 2016-09-06 | Rohm And Haas Electronic Materials Llc | Reaction products of heterocyclic nitrogen compounds polyepoxides and polyhalogens |
-
2016
- 2016-07-27 US US15/220,476 patent/US10006136B2/en active Active
- 2016-07-28 TW TW105123889A patent/TWI600804B/zh active
- 2016-07-29 JP JP2016150622A patent/JP6278535B2/ja active Active
- 2016-07-29 CN CN201610620653.9A patent/CN106435662B/zh active Active
- 2016-07-31 KR KR1020160097687A patent/KR101779408B1/ko active Active
- 2016-08-02 EP EP16182480.0A patent/EP3128044B1/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017036501A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | アルファアミノ酸とビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI600804B (zh) | 2017-10-01 |
| US20170037528A1 (en) | 2017-02-09 |
| CN106435662B (zh) | 2018-11-30 |
| EP3128044B1 (en) | 2018-06-20 |
| US10006136B2 (en) | 2018-06-26 |
| KR101779408B1 (ko) | 2017-09-18 |
| KR20170017739A (ko) | 2017-02-15 |
| JP2017036502A (ja) | 2017-02-16 |
| EP3128044A1 (en) | 2017-02-08 |
| TW201712159A (zh) | 2017-04-01 |
| CN106435662A (zh) | 2017-02-22 |
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