TWI762731B - 銅電鍍組合物及在基板上電鍍銅之方法 - Google Patents

銅電鍍組合物及在基板上電鍍銅之方法 Download PDF

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TWI762731B
TWI762731B TW107136149A TW107136149A TWI762731B TW I762731 B TWI762731 B TW I762731B TW 107136149 A TW107136149 A TW 107136149A TW 107136149 A TW107136149 A TW 107136149A TW I762731 B TWI762731 B TW I762731B
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copper
electroplating
substrate
photoresist
features
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TW107136149A
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TW201918589A (zh
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拉維 博克雷爾
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美商羅門哈斯電子材料有限公司
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
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    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
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    • C25D7/00—Electroplating characterised by the article coated
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Abstract

包含咪唑化合物之銅電鍍組合物能夠在基板上實現具有均一形態之銅的電鍍。所述組合物及方法能夠實現由光阻限定之特徵的銅電鍍。此類特徵包含柱、接合墊及線空間特徵。

Description

銅電鍍組合物及在基板上電鍍銅之方法
本發明係針對銅電鍍組合物及在基板上電鍍銅之方法，其中銅電鍍組合物包含咪唑化合物以提供具有均一形態之銅沈積物。更具體而言，本發明係針對銅電鍍組合物及在基板上電鍍銅之方法，其中銅電鍍組合物包含咪唑化合物以提供具有均一形態之銅沈積物，且其中銅電鍍組合物及銅電鍍方法可用於電鍍由光阻限定之特徵。
由光阻限定之特徵包含銅柱及再分佈層佈線，諸如積體電路晶片及印刷電路板之接合墊及線空間特徵。所述特徵由微影製程形成，在微影製程中，將光阻施加至基板上，基板諸如半導體晶圓晶片，在封裝技術中常稱為晶粒，或環氧樹脂/玻璃印刷電路板。一般而言，將光阻施加至基板之表面且將具有圖案之光罩施加至光阻上。將帶有光罩之基板暴露於諸如紫外光之輻射。通常，將暴露於輻射之光阻部分顯影掉或移除，暴露出基板之表面。視光罩之特定圖案而定，可以用留在基板上之未曝光之光阻形成電路線或孔口之輪廓，形成電路線圖案或孔口之壁。基板表面包含使得基板表面能夠導電之金屬晶種層或其他導電金屬或金屬合金材料。隨後將含有圖案化光阻之基板浸沒在金屬電鍍浴中，通常為銅電鍍浴，且將金屬電鍍在電路線圖案或孔口中，形成諸如柱、接合墊或電路線之特徵，亦即線空間特徵。當電鍍完成時，用剝離溶液將光阻之其餘部分自基板剝離，且進一步處理帶有由光阻限定之特徵之基板。
柱，諸如銅柱，通常用焊料蓋住以實現鍍覆柱之半導體晶片與基板之間的黏合以及導電。此類配置可見於先進封裝技術中。用焊料蓋住之銅柱結構為先進封裝應用中快速增長之部分，因為與單獨的焊料凸塊相比，輸入/輸出（I/O）密度改良。具有不可回焊銅柱及可回焊焊帽結構之銅柱凸塊具有以下優點：（1）銅具有低電阻及高電流密度效能；（2）銅之導熱性提供超過三倍之焊料凸塊導熱性；（3）可改良可能引起可靠性問題之傳統球狀柵格陣列熱膨脹係數（ball grid array coefficient of thermal expansion，BGA CTE）錯配問題；以及（4）銅柱在回焊期間不塌陷，允許極細間距而不損害托起高度。
在所有銅柱凸塊製造方法中，電鍍為目前為止商業上最可行之方法。在實際工業生產中，考慮到成本及製程條件，電鍍提供大規模生產率，且在銅柱形成之後沒有拋光或腐蝕製程來改變銅柱表面形態。因此，尤其重要的是藉由電鍍獲得光滑表面形態。用於電鍍銅柱之理想的銅電鍍化學及方法在用焊料回焊之後產生具有優異均一性、平坦柱形狀及無空隙金屬間界面的沈積物，且能夠以高沈積速率鍍覆以實現高晶圓產量。然而，所述鍍覆化學及方法之發展為行業之難題，因為一種屬性之改良通常以另一種屬性為代價。基於銅柱之結構已被各種製造商用在消費品中，諸如智慧型手機及個人電腦。隨著晶圓級處理（Wafer Level Processing，WLP）繼續發展且採用銅柱技術，對於能夠製造出可靠銅柱結構之具有先進能力之鍍銅浴及鍍銅方法的需求將會不斷增加。
在金屬電鍍再分佈層佈線之情況下亦會遇到類似的形態問題。接合墊及線空間特徵之形態方面的缺陷亦損害先進封裝物品之效能。因此，需要能夠提供具有均一形態之銅沈積物且可用於在形成由光阻限定之特徵時電鍍銅之銅電鍍組合物及銅電鍍方法。
本發明包含一種組合物，其包含一或多個銅離子源；一或多種電解質；一或多種加速劑；一或多種抑制劑；以及一或多種具有下式之咪唑化合物：
Figure 02_image003
其中R1 、R2 、R3 、R4 、R5 及R6 獨立地選自氫；直鏈或分支鏈(C1 -C4 )烷基；以及苯基。
本發明亦包含一種方法，其包含： a) 提供基板； b) 提供銅電鍍組合物，其包含一或多個銅離子源；一或多種電解質；一或多種加速劑；一或多種抑制劑；以及一或多種具有下式之咪唑化合物：
Figure 02_image005
其中R1 、R2 、R3 、R4 、R5 及R6 獨立地選自氫；直鏈或分支鏈(C1 -C4 )烷基；以及苯基； c) 將銅電鍍組合物施加至基板上；以及 d) 用銅電鍍組合物在基板上電鍍具有均一形態之銅。
本發明之銅電鍍組合物能夠實現具有均一形態之銅沈積物且可用於在基板上電鍍銅光阻特徵。用本發明之銅電鍍組合物及方法電鍍之光阻特徵具有基本上均一之形態且基本上沒有結節。諸如銅柱及接合墊之光阻特徵具有基本上平坦的輪廓。
除非上下文另作明確指示，否則如本說明書通篇所使用之以下縮寫應具有以下含義：A = 安培；A/dm2 = 安培/平方分米 = ASD；℃ = 攝氏度；UV = 紫外輻射；g = 公克；ppm = 百萬分率 = mg/L；L = 公升；μm = 微米（micron）= 微米（micrometer）；mm = 毫米；cm = 公分；DI = 去離子；mL = 毫升；mol = 莫耳；mmol = 毫莫耳；Mw = 重量平均分子量；Mn = 數目平均分子量；3D = 三維；FIB = 聚焦離子束；WID = 晶粒內；WID% = 晶粒內之柱之高度均一性的量度標準；TIR = 總指示偏差量 = 總指示器讀數 = 指示器移動全量 = FIM；RDL = 再分佈層；且Avg. = 平均值。
如本說明書通篇所使用，術語「鍍覆」係指銅電鍍。「沈積」及「鍍覆」在本說明書通篇中可互換使用。「加速劑」係指增加電鍍浴之鍍覆速率之有機添加劑。「抑制劑」係指在電鍍期間抑制金屬之鍍覆速率之有機添加劑。術語「陣列」意指有序的配置。術語「部分」意指可以包含整個官能基或官能基之一部分作為子結構的分子或聚合物之一部分。術語「部分」及「基團」在本說明書通篇中可互換使用。術語「孔口」意指開口、孔洞或間隙。術語「形態」意指物品之形式、形狀及結構。術語「總指示器偏差量」或「總指示器讀數」為零件之平面、圓柱體或波狀表面之最大與最小量測值（亦即，指示器之讀數）之間的差值，展示其與其他圓柱體特徵或類似情況之平坦度、圓度（圓形度）、圓柱度、同心度之偏差量。術語「輪廓測定法」意指在對物體進行量測及輪廓分析時使用一種技術或使用雷射或白光電腦產生之投影對三維物體之表面進行量測。術語「間距」意指基板上之特徵位置彼此間的頻率。術語「平均值」意指表示參數之中心值之數值，且中心值藉由將針對特定參數對多個樣本所量測或收集之數值相加且將各樣本之量測值之總和除以樣本總數來確定。術語「參數」意指形成定義一個系統或設定其操作條件之集合中之一個的數值或其他可量測之因數。術語「周長」意指柱周圍之邊界。術語「例如（e.g.）」意指例如（for example）。冠詞「一（a/an）」係指單數及複數。
所有數值範圍皆為包含性的且可按任何順序組合，但顯然此類數值範圍限於總計共100%。
本發明包含一種組合物，其包含一或多個銅離子源；及一或多個銅離子（陽離子）源之相應陰離子；一或多種電解質；一或多種加速劑；一或多種抑制劑；一或多種具有下式之咪唑化合物：
Figure 02_image007
其中R1 、R2 、R3 、R4 、R5 及R6 獨立地選自氫；直鏈或分支鏈(C1 -C4 )烷基；以及苯基；且溶劑為水。較佳地，R1 、R2 、R3 、R4 、R5 及R6 獨立地選自氫及直鏈或分支鏈(C1 -C4 )烷基；更佳地，R1 、R2 、R3 、R4 、R5 及R6 獨立地選自氫及直鏈(C1 -C2 )烷基；甚至更佳地，R1 、R2 、R3 及R4 獨立地選自氫及甲基，且R5 及R6 為氫；最佳地，R1 、R2 、R3 及R4 為甲基，且R5 及R6 為氫（2,2'-雙(4,5-二甲基)咪唑）。本發明之咪唑化合物具有未四級銨化之氮。此類化合物可以根據化學文獻容易地製得或自商業上獲得，諸如自美國威斯康星州密爾沃基之西格瑪-奧德里奇公司（Sigma-Aldrich, Milwaukee, WI, USA）獲得。
可以按足夠提供具有光滑且均一之表面形態之銅沈積物之量在銅電鍍組合物中包含本發明之一或多種咪唑化合物。以銅電鍍組合物之總重量計，較佳地，按以下的量在銅電鍍組合物中包含本發明之一或多種咪唑化合物：0.25 mg/L至1000 mg/L（例如，0.5 mg/L至800 mg/L，或例如1 mg/L至700 mg/L）；更佳地，10 mg/L至500 mg/L（例如，15 mg/L至450 mg/L，或例如25 mg/L至250 mg/L）；甚至更佳地，50 mg/L至500 mg/L（例如，60 mg/L至400 mg/L，或例如75 mg/L至350 mg/L）；最佳地，100 mg/L至500 mg/L（例如，150 mg/L至450 mg/L，或例如200 mg/L至400 mg/L）。
水性銅電鍍組合物包含來自一或多個來源之銅離子，所述來源諸如水溶性銅鹽。此類水溶性銅鹽包含但不限於：硫酸銅，諸如五水合硫酸銅；鹵化銅，諸如氯化銅；乙酸銅；硝酸銅；四氟硼酸銅；烷基磺酸銅；芳基磺酸銅；胺基磺酸銅；過氯酸銅以及葡糖酸銅。例示性烷磺酸銅包含(C1 -C6 )烷磺酸銅，且更佳為(C1 -C3 )烷磺酸銅。較佳的烷磺酸銅為甲磺酸銅、乙磺酸銅及丙磺酸銅。例示性芳基磺酸銅包含但不限於苯磺酸銅及對甲苯磺酸銅。可使用銅離子源之混合物。此類銅鹽為本領域之技術人員熟知的或可以根據化學文獻容易地製得或自商業上獲得，諸如自西格瑪-奧德里奇公司獲得。除銅離子（陽離子）之外，銅電鍍組合物亦包含水溶性銅鹽之相應陰離子。除不可避免之雜質以外，本發明之銅電鍍組合物不含其他金屬，諸如合金金屬。按能夠提供具有光滑且均一之銅形態之銅沈積物之量在本發明之銅電鍍組合物中包含一或多種水溶性銅鹽。較佳地，一或多種銅鹽之存在量足以提供銅離子濃度為30 g/L至70 g/L之鍍覆溶液；更佳地，濃度為40 g/L至60 g/L。
本發明之電解質可以為鹼性的或酸性的。較佳地，電解質為酸性的。較佳地，電解質之pH ≤ 2；更佳地，pH ≤ 1。酸性電解質包含但不限於硫酸；乙酸；氟硼酸；烷磺酸，諸如甲磺酸、乙磺酸、丙磺酸及三氟甲磺酸；芳基磺酸，諸如苯磺酸、對甲苯磺酸；胺基磺酸；鹽酸；氫溴酸；過氯酸；硝酸；鉻酸；以及磷酸。在本發明之鍍銅組合物中可以使用酸之混合物。較佳的酸包含硫酸、甲磺酸、乙磺酸、丙磺酸、鹽酸以及其混合物。酸之存在量可在1至400 g/L之範圍內。電解質一般可購自多種來源且無需進一步純化即可使用。
視情況，本發明之電解質可以含有鹵離子源。較佳使用氯離子及溴離子；更佳地，在銅電鍍組合物中包含氯離子。例示性氯離子源包含氯化銅、氯化鈉、氯化鉀及鹽酸（氯化氫）。溴離子源包含溴化鈉、溴化鉀及溴化氫。本發明中可以使用廣泛範圍的鹵離子濃度。以鍍覆組合物計，鹵離子濃度較佳在0.5 mg/L至200 mg/L範圍內；更佳地，形成10 mg/L至150 mg/L；最佳地，50 mg/L至100 mg/L。此類鹵離子源一般可在市面上購得且無需進一步純化即可使用。
加速劑（亦稱為增亮劑）包含但不限於N,N-二甲基-二硫基胺基甲酸-(3-磺丙基)酯；3-巰基-丙基磺酸-(3-磺丙基)酯；3-巰基-丙基磺酸鈉鹽；碳酸二硫基-O-乙酯-S-酯與3-巰基-1-丙烷磺酸鉀鹽；雙磺丙基二硫化物；雙-(鈉磺丙基)-二硫化物；3-(苯并噻唑基-S-硫基)丙基磺酸鈉鹽；吡啶鎓丙基磺基甜菜鹼；1-鈉-3-巰基丙烷-1-磺酸鹽；N,N-二甲基-二硫基胺基甲酸-(3-磺乙基)酯；3-巰基-乙基丙基磺酸-(3-磺乙基)酯；3-巰基-乙基磺酸鈉鹽；碳酸-二硫基-O-乙酯-S-酯與3-巰基-1-乙烷磺酸鉀鹽；雙磺乙基二硫化物；3-(苯并噻唑基-S-硫基)乙基磺酸鈉鹽；吡啶鎓乙基磺基甜菜鹼；以及1-鈉-3-巰基乙烷-1-磺酸鹽。此類加速劑可在市面上購得，諸如自西格瑪-奧德里奇公司購得，或可以根據化學文獻製得。加速劑可以按各種濃度使用。加速劑較佳按0.1 mg/L至1000 mg/L之量使用；更佳按0.5 mg/L至500 mg/L之量使用；最佳按1 mg/L至50 mg/L之量使用。
抑制劑包含但不限於聚丙二醇共聚物及聚乙二醇共聚物，包含環氧乙烷-環氧丙烷（「EO/PO」）共聚物及丁醇-環氧乙烷-環氧丙烷共聚物。抑制劑之重量平均分子量可在800至15,000，較佳1000至15,000之範圍內。以鍍覆組合物之重量計，包含0.5 g/L至15 g/L、較佳0.5 g/L至5 g/L之量的抑制劑。
銅電鍍組合物可以藉由按任何順序組合組分來製備。較佳的是，首先向浴液容器中添加無機組分，諸如銅離子源、水、電解質及視情況選用之鹵離子源，隨後添加有機組分，諸如咪唑化合物、加速劑、抑制劑及任何其他有機組分。
視情況，水性銅電鍍浴可以包含習知調平劑，條件為此類調平劑基本上不損害銅沈積物之形態。此類調平劑可以包含Step等人之美國專利第6,610,192號、Wang等人之美國專利第7,128,822號、Hayashi等人之美國專利第7,374,652號以及Hagiwara等人之美國專利第6,800,188號中所揭示之彼等調平劑。此類調平劑可以按習知量包含在內；但是，較佳將此類調平劑排除在本發明之銅電鍍組合物之外。
視情況，本發明之銅電鍍組合物可以包含添加劑，諸如緩衝劑，用以幫助維持所期望之pH；抗微生物劑；界面活性劑，諸如非離子、陽離子、陰離子及兩性離子界面活性劑，界面活性劑較佳為非離子界面活性劑；以及消泡劑。這些添加劑為本領域之技術人員熟知的，且按其習知量使用，或者可以進行少量實驗來確定待包含在本發明之銅電鍍組合物中之添加劑之最佳濃度。
銅電鍍組合物較佳由以下組成：一或多個銅離子源；及一或多個銅離子（陽離子）源之相應陰離子；一或多種電解質；一或多種加速劑；一或多種抑制劑；一或多種具有式（I）之咪唑化合物；水；以及視情況選用之一或多個鹵離子源；以及一或多種選自緩衝劑、抗微生物劑、界面活性劑及消泡劑之添加劑。
銅電鍍組合物更佳由以下組成：一或多個銅離子源；及一或多個銅離子（陽離子）源之相應陰離子；一或多種電解質；一或多種加速劑；一或多種抑制劑；2,2'-雙(4,5-二甲基)咪唑；水；以及視情況選用之一或多個鹵離子源；以及一或多種選自緩衝劑、抗微生物劑、界面活性劑及消泡劑之添加劑。
本發明之銅電鍍組合物可用於在10℃至65℃之溫度下電鍍銅。鍍覆組合物之溫度較佳為15℃至50℃，更佳為室溫至40℃。
較佳在鍍覆期間攪拌銅電鍍組合物。任何適合的攪拌方法都可以使用。攪拌方法在本領域中為熟知的。適合攪拌方法包含但不限於：空氣鼓泡、工件攪拌及撞擊。
可以藉由使基板與本發明之銅電鍍組合物接觸而使基板電鍍上銅。基板可以用作陰極。陽極可以為可溶性陽極，諸如銅陽極，或不溶性陽極。本領域之技術人員已知各種不溶性陽極。向電極施加電勢。電流密度可在0.25 ASD至40 ASD、較佳1 ASD至30 ASD、更佳10 ASD至30 ASD之範圍內。
本發明之銅電鍍組合物及方法可用於在期望光滑且均一形態之銅沈積物之情況下在各種基板上鍍覆具有光滑且均一之形態的銅；但是，所述銅電鍍組合物及方法較佳用於鍍覆由光阻限定之特徵。
本發明之用於電鍍由光阻限定之銅特徵之方法及組合物能夠實現如下由光阻限定之特徵之陣列，其所具有之平均TIR使得特徵之形態基本上光滑，不含結節，且在柱、接合墊及線空間特徵方面具有基本上平坦的輪廓。本發明之由光阻限定之特徵用留在基板上之光阻電鍍且延伸超出基板平面。這與雙重鑲嵌及印刷電路板鍍覆形成對比，後者不使用光阻來限定特徵，且特徵延伸超出基板平面，但嵌入基板中。由光阻限定之特徵與鑲嵌及印刷電路板特徵之間的重要差異在於：在鑲嵌及印刷電路板方面，包含側壁在內之鍍覆表面均導電。雙重鑲嵌及印刷電路板鍍覆浴液具有能提供自下而上或超保形填充之浴液配方，其中特徵之底部與特徵之頂部相比鍍覆較快。在由光阻限定之特徵中，側壁為不導電的光阻，且鍍覆僅發生在具有導電晶種層之特徵底部，之後進行保形沈積或以相同鍍覆速度各處沈積。
雖然本發明基本上係關於電鍍具有圓形形態之銅柱的方法加以描述，但是本發明亦適用於其他由光阻限定之特徵，諸如接合墊及線空間特徵。一般而言，除圓形或圓柱形之外，特徵之形狀亦可以為例如長方形、八邊形及矩形。本發明之方法較佳用於電鍍圓柱形銅柱，其中所述柱具有基本上平坦之頂部。
銅電鍍方法提供平均TIR為0至3、較佳0至2、更佳0.5至1.5、最佳0.5至1的由光阻限定之銅特徵之陣列，所述特徵諸如銅柱。
基板上由光阻限定之特徵之陣列的平均TIR涉及測定單一基板上來自特徵陣列之個別特徵之TIR且求其平均值。指定基板之特徵之平均TIR可以藉由測定低密度、中密度或大密度間距或其組合之區域的個別特徵之TIR，將量測值相加且取這些值之平均值來確定。藉由量測若干個別特徵之TIR，平均TIR就能代表整個基板。
個別特徵之TIR可以藉由下式確定： TIR = 高度中心 - 高度邊緣 ， 其中高度中心 為沿柱之中軸線測得之柱高，而高度邊緣 為沿柱邊緣在邊緣上之最高點測得之柱高。
此外，銅電鍍方法及組合物可以提供WID%為0%至16%、較佳5%至15%、更佳10%至15%、最佳13%至15%的由光阻限定之銅特徵之陣列。WID%或晶粒內%可以藉由下式確定： WID% = 1/2 × [(高度最大 - 高度最小 )/高度平均 ] × 100 其中高度最大 為電鍍在基板上之柱陣列之最高柱的高度，諸如在柱之最高部分所量測。高度最小 為電鍍在基板上之柱陣列之最短柱的高度，如在柱之最高部分所量測。高度平均 為電鍍在基板上之所有柱之平均高度。最佳地，本發明之銅電鍍組合物及方法在基板上提供如下由光阻限定之特徵之陣列，其中在平均TIR與WID%之間達成平衡，使得平均TIR在0至3之範圍內，而WID%在0%至16%之範圍內，各參數之較佳範圍如上文所揭示。
用於確定TIR及WID%之柱參數可以使用光學輪廓測定法量測，諸如採用KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列或類似設備，諸如白光LEICA DCM 3D。諸如柱高度及間距之參數可以使用此類裝置量測。
由本發明之銅電鍍組合物電鍍之銅柱可具有3:1至1:1或諸如2:1至1:1之縱橫比。RDL類型之結構可具有大至1:20（高度:寬度）之縱橫比。
儘管本發明之方法可用於電鍍由光阻限定之特徵，諸如柱、接合墊及線空間特徵，但是所述方法在鍍覆作為本發明之較佳特徵之銅柱的情形下加以描述。本發明之銅柱可以藉由以下形成：首先在諸如半導體晶片或晶粒之基板上沈積導電晶種層。隨後用光阻材料塗佈基板且成像，使光阻層選擇性暴露於諸如紫外輻射之輻射。光阻層可藉由本領域中已知之習知方法施加至半導體晶片表面。光阻層之厚度可視特徵之高度而變化。厚度可以在1 μm至350 μm、較佳10 µm至230 µm、更佳20 µm至220 µm之範圍內。將圖案化光罩施加至光阻層之表面。光阻層可為正片型或負片型光阻。當光阻為正片型光阻時，暴露於輻射之光阻部分用諸如鹼性顯影劑之顯影劑移除。在表面上形成具有多個孔口、諸如通孔之圖案，該圖案一直向下到達基板或晶粒上之晶種層。柱間距可以在20 μm至400 μm之範圍內；間距較佳可以在100 μm至350 μm之範圍內；柱間距更佳可以在100 μm 至250 µm之範圍內。通孔之直徑可視特徵（柱）之直徑而變化。通孔之直徑可以在2 μm至300 μm、較佳5 μm至225 μm、更佳15 µm至200 µm之範圍內。隨後可以將整個結構置放在本發明之銅電鍍組合物中。進行電鍍以用具有基本上平坦之頂部之銅柱填充各通孔之至少一部分。電鍍為保形沈積或以相同鍍覆速度各處沈積，而非超保形或超填充。隨後將帶有銅柱之整個結構轉移至含有焊料之浴液中，焊料諸如錫焊料或錫合金焊料，諸如錫/銀或錫/鉛合金，且在每根銅柱之基本上平坦之表面上電鍍上焊料凸塊以填充通孔部分。其餘光阻藉由本領域中已知之習知方法移除，在晶粒上留下具有焊料凸塊之銅柱陣列。未被柱覆蓋之其餘晶種層藉由本領域中熟知之蝕刻方法移除。將具有焊料凸塊之銅柱置放成與基板之金屬觸點接觸，基板諸如印刷電路板，可以由有機層合物、矽或玻璃製成之另一個晶圓或晶粒或插入件。藉由本領域中已知之習知方法加熱焊料凸塊以回焊焊料且將銅柱連接至基板之金屬觸點上。可使用用於回焊焊料凸塊之習知回焊方法。回焊爐之一個實例為來自Sikiama International, Inc之FALCON 8500工具，其包含5個加熱區及2個冷卻區。回焊循環可在1至5個的範圍內。銅柱以物理方式及以電氣方式接觸基板之金屬觸點。隨後可注入底膠材料來填充晶粒、柱與基板之間的空隙。可使用本領域中熟知之習知底膠。
圖1為使用KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列收集之本發明銅柱之3D影像，本發明銅柱具有圓柱形形態，具有基底及平坦之頂表面形態，用於電鍍焊料凸塊。在回焊期間，將焊料熔融以獲得光滑表面。若柱在回焊期間過於隆起，則焊料可能熔融且自柱之側面流走，於是柱頂部就沒有足夠的焊料用於後續接合步驟，如圖2中所示，圖2亦為像圖1一樣之3D影像。若柱過於中凹或具有下沉孔型組態，則自用於電鍍柱之銅浴留下之材料會被滯留在中凹之頂部且污染焊料浴，由此縮短焊料浴之壽命。
為了在柱電鍍期間提供銅柱與半導體晶粒之間的金屬觸點及黏合，通常在晶粒上沈積由諸如鈦、鈦-鎢或鉻之材料構成的凸塊下金屬化層。或者，可以在半導體晶粒上沈積金屬晶種層，諸如銅晶種層，以提供銅柱與半導體晶粒之間的金屬觸點。在自晶粒移除感光層之後，移除凸塊下金屬化層或晶種層之所有部分，但柱下面之部分除外。可以使用本領域中已知之習知方法。
雖然銅柱高度會有不同，但是銅柱高度較佳在1 μm至300 μm、更佳5 μm至225 μm、甚至更佳15 μm至200 μm之高度範圍內。銅柱直徑亦可以不同。銅柱直徑較佳為2 μm至300 μm，更佳為5 μm至225 μm，甚至更佳為15 μm至200 μm。
銅電鍍方法及組合物提供具有基本上均一形態且基本上不含結節之由光阻限定之銅特徵。銅柱及接合墊具有基本上平坦之輪廓。銅電鍍組合物及方法能夠獲得可實現所期望之形態的平均TIR且在平均TIR與WID%之間達成平衡。
以下實例意在進一步說明本發明，而非意在限制其範圍。 實例1（本發明實例） 銅電鍍浴
用如下表1中所揭示之組分及量製備本發明之下列銅電鍍浴。 表1
Figure 107136149-A0304-0001
將銅電鍍浴之組分在室溫下攪拌混合在一起。銅電鍍浴之pH ＜ 1。 實例2（比較實例） 合成3,3'-(乙烷-1,2-二基)雙(1-(2-羥乙基)-1H-咪唑-3-鎓)氯化物
將N-(2-羥乙基)咪唑（2.55 g，22.7 mmol）及1,2-二氯乙烷（1.00 g，10.11 mmol）稱至20 mL壓力管中。添加乙腈（10 mL），將管密封且加熱至90℃保持60小時。冷卻至室溫，所得沈澱藉由過濾分離，用新鮮乙腈洗滌，且在真空中乾燥，得到2.91 g（59%）呈白色粉末狀之化合物。
1H NMR (400 MHz, DMSO-d6) δ 9.37 (s, 2H), 7.79 (s, 4H), 5.50 (t, J = 5.5 Hz, 2H), 4.81 (s, 4H), 4.23 (t, J = 4.6 Hz, 4H), 3.70 (t, J = 5.2 Hz, 4H). 13C NMR (101 MHz, DMSO-d6) δ 136.96, 123.06, 122.28, 59.08, 51.84, 48.30。 實例3（比較實例） 銅電鍍浴
用如下表2中所揭示之組分及量製備本發明之下列銅電鍍浴。 表2
Figure 107136149-A0304-0002
將銅電鍍浴之組分在室溫下攪拌混合在一起。銅電鍍浴之pH ＜ 1。 實例4（本發明實例）
一個300 mm矽晶圓晶粒，其具有兩個不同間距區域（密間距 = 100 μm，且疏間距 = 250 μm），其中各區域都有50 μm厚之圖案化光阻，且在各區域中都有直徑為50 μm之多個孔口（可購自華盛頓州溫哥華市之IMAT公司（IMAT, Inc., Vancouver, WA）），將其浸沒在如實例1之表1中所揭示之本發明之銅電鍍浴中。陽極為可溶性銅電極。將晶圓及陽極連接至整流器，且在孔口底部所暴露之晶種層上電鍍上銅柱。鍍覆期間之平均電流密度為15 ASD，且銅電鍍浴之溫度為在25℃下。鍍覆浴之pH ＜ 1。在電鍍後，隨後用可購自陶氏化學公司（Dow Chemical Company）之BPR光剝離溶液剝離其餘光阻，在晶圓晶粒上之兩個不同間距區域留下銅柱陣列。隨後分析來自各區域之八根銅柱之形態，其中五個在密區域中且三個在疏區域中，從而捕獲晶粒內之高度均一性及TIR之最大偏差。銅柱中心之高度及邊緣之高度以及柱之TIR使用KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列量測。TIR藉由下式確定： TIR = 高度中心 - 高度邊緣
亦測定八根柱之平均TIR，如表3中所示。 表3
Figure 107136149-A0304-0003
柱陣列之WID%由KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列及下式確定： WID% = 1/2 × [(高度最大 - 高度最小 )/高度平均 ] × 100
跨密間距及疏間距之WID%（亦即跨密間距及疏間距量測8根柱）為14.3%且平均TIR為+ 0.8 µm。柱表面均呈現為光滑的且不含結節。包含反應產物1之銅電鍍浴能鍍覆出非常好的銅柱。圖1為鍍覆在晶種層上之間距100 µm之柱4的影像，且使用3D影像進行分析，所述影像使用KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列收集。頂部表面形態光滑且平坦，適合於容納焊料。 實例5（比較實例）
一個300 mm矽晶圓晶粒，其具有兩個不同間距區域（密間距 = 100 μm，且疏間距 = 250 μm），其中各區域都有50 μm厚之圖案化光阻，且在各區域中都有直徑為50 μm之多個孔口（可購自華盛頓州溫哥華市之IMAT公司），將其浸沒在如實例3之表2中所揭示的比較性銅電鍍浴中。陽極為可溶性銅電極。將晶圓及陽極連接至整流器，且在孔口底部所暴露之晶種層上電鍍上銅柱。鍍覆期間之平均電流密度為15 ASD，且銅電鍍浴之溫度為在25℃下。鍍覆浴之pH ＜ 1。在電鍍後，隨後用可購自陶氏化學公司之BPR光剝離溶液剝離其餘光阻，在晶圓上之兩個不同區域留下銅柱陣列。隨後分析來自各區域之八根銅柱的形態。銅柱中心之高度及邊緣之高度以及柱之TIR使用KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列量測。TIR藉由下式確定：TIR=高度中心-高度邊緣
亦測定八根柱之平均TIR，如表4中所示。
Figure 107136149-A0305-02-0019-1
柱陣列之WID%由KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列及下式確定：WID%=1/2×[(高度最大-高度最小)/高度平均]×100
跨密間距及疏間距之WID%為17.9%(亦即跨密間距及疏間距量測8根柱)且平均TIR為+4.4μm。柱頂部呈現隆起且粗糙，因此不適合容納焊料。圖2為鍍覆在晶種層上之間距100μm之柱5的影像，且使用3D影像進行分析，所述影像使用KEYENCE 3D雷射掃描共聚焦顯微鏡VK-X系列收集。柱周圍之表面形態呈現為光滑的；但是，頂部是圓形的且粗糙，不適合容納焊料。
圖1為自含有2,2'-雙(4,5-二甲基)咪唑之本發明銅電鍍浴電鍍之50 µm直徑×30 µm高度銅柱的放大50倍的3D影像。 圖2為自含有3,3'-(乙烷-1,2-二基)雙(1-(2-羥乙基)-1H-咪唑-3-鎓)氯化物之比較性銅電鍍浴電鍍之50 µm直徑×30 µm高度銅柱的放大50倍的3D影像。
Figure 107136149-A0101-11-0002-1

Claims (7)

  1. 一種銅電鍍組合物，其包括一或多個銅離子源；一或多種電解質；一或多種加速劑；一或多種抑制劑；以及一或多種具有下式之咪唑化合物：
    Figure 107136149-A0305-02-0020-2
     其中R1、R2、R3、R4、R5及R6獨立地選自氫；直鏈或分支鏈(C1-C4)烷基；以及苯基，其中所述一或多種咪唑化合物之量為50ppm至500ppm。
  2. 如申請專利範圍第1項所述的銅電鍍組合物，其中R1、R2、R3、R4、R5及R6獨立地選自氫及(C1-C2)烷基。
  3. 如申請專利範圍第2項所述的銅電鍍組合物，其中R1、R2、R3及R4獨立地選自氫及甲基；且R5及R6為氫。
  4. 一種用於在基板上電鍍銅之方法，其包括：a)提供該基板；b)提供銅電鍍組合物，其包括一或多個銅離子源；一或多種電解質；一或多種加速劑；一或多種抑制劑；以及一或多種具有下式之咪唑化合物：
    Figure 107136149-A0305-02-0020-3
     其中R1、R2、R3、R4、R5及R6獨立地選自氫；直鏈或分支鏈(C1-C4)烷基；以及苯基，其中所述一或多種咪唑化合物之量為50ppm至500ppm； c)將所述銅電鍍組合物施加至所述基板上；以及d)用所述銅電鍍組合物在所述基板上電鍍具有均一形態之銅。
  5. 如申請專利範圍第4項所述的方法，其中所述基板包括由光阻限定之特徵且所述由光阻限定之特徵在電鍍期間用銅電鍍。
  6. 如申請專利範圍第5項所述的方法，其中所述基板上之所述由光阻限定之特徵選自柱、接合墊及線空間特徵中之一或多者。
  7. 如申請專利範圍第4項所述的方法，其中電鍍係在0.25ASD至40ASD之電流密度下進行。
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