JP2017036501A - アルファアミノ酸とビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 - Google Patents
アルファアミノ酸とビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 Download PDFInfo
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Abstract
【解決手段】α−アミノ酸と下式で表わされるビスエポキシドとの反応生成物を電気銅めっき浴に添加した、アルファアミノ酸とビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法。ビスエポキシドは下式が望ましい。
(R1及びR2は、水素又はC1−4アルキル;A=O((CR3R4)mO)n又は(CH2)y;R3及びR4は各々独立にH、メチル又はヒドロキシル;m=1−6の整数;n=1−20の整数y=0−6の整数;y=0であるとき、Aは、化学結合である)
【選択図】なし
Description
%TIR=[高さcenter−高さedge]/高さmax×100、
式中、高さcenterは、その中心軸に沿って測定されるピラーの高さであり、高さedgeは、エッジ上の最も高い点でそのエッジに沿って測定されるピラーの高さである。高さmaxは、ピラーの底部からその上部の最も高い点までの高さである。高さmaxは、正規化因子である。
TIR=高さcenter−高さedge
式中、高さcenter及び高さedgeは、上で定義した通りである。
%WID=1/2×[(高さmax−高さmin)/高さavg]×100
式中、高さmaxは、ピラーの最も高い部分で測定される、基板上に電気めっきされたピラーのアレイの最も高いピラーの高さである。高さminは、ピラーの最も高い部分で測定される、基板上に電気めっきされたピラーのアレイの最も短いピラーの高さである。高さavgは、基板上に電気めっきされた全てのピラーの平均高さである。
凝縮器及び温度計を装備した250mL三口丸底フラスコに、100ミリモルのL−アルギニン及び20mLの脱イオン(「DI」)水を加え、続いて、80℃の100ミリモルのグリセロールジグリシジルエーテルを加えた。得られた混合物を95℃に設定した油浴を使用して約5時間加熱し、次いで、室温でさらに6時間撹拌した。反応生成物を容器に移し、すすぎ、脱イオン水で調節した。反応生成物溶液は、さらなる精製を行わずに使用した。
硫酸銅五水和物からの40g/L銅イオン、140g/L硫酸、50ppm塩化物イオン、5ppmの促進剤、及び2g/Lの抑制剤を組み合わせることによって、水性酸電気銅めっき浴を調製した。促進剤は、ビス(ナトリウム−スルホプロピル)ジスルフィドであった。抑制剤は、約1,000の重量平均分子量及び末端ヒドロキシル基を有するEO/POコポリマーであった。電気めっき浴はまた、実施例1からの1ppmの反応生成物1も含有していた。浴のpHは、1未満であった。
%TIR=[高さcenter−高さedge]/高さmax×100、
TIR=高さcenter−高さedge
%WID=1/2×[(高さmax−高さmin)/高さavg]×100
厚さ50μmのパターン化されたフォトレジスト及び複数のビアを有するシリコンウエハセグメント(IMAT,Inc.、Vancouver,WAから入手可能)を、実施例2の電気銅めっき浴に浸漬した。陽極は、可溶性銅電極であった。ウエハ及び陽極を整流器に接続し、ビアの底部の露出されたシード層上に銅ピラーを電気めっきした。めっき中の電流密度は9 ASDであり、電気銅めっき浴の温度は25℃であった。
凝縮器及び温度計を装備した125mL三口丸底フラスコ内で、90mmolの2−メチルキノリン−4−アミン、10mmolの2−(2−アミノエチル)ピリジンを、20mLの脱イオン水及び5mlの50%硫酸の混合物に加えた。混合物を80℃まで加熱した後、100mmolの1,4−ブタンジオールジグリシジルエーテルを滴下で加えた。得られた混合物を、95℃に設定した油浴を用いて約4時間加熱し、次いで、さらに8時間室温で撹拌した。酸性水を用いて反応生成物(反応生成物−比較例)を希釈し、さらに精製することなく使用した。
反応生成物−比較例を比較例1の反応生成物に代用したことを除き、実施例2に説明される方法を、同じ電気銅めっき浴、ウエハ、及びめっきパラメータで繰り返した。反応生成物−比較例は、1ppmの量で電気銅めっき浴に含まれた。ウエハをピラーでめっきした後、フォトレジストを剥離し、シリコンウエハ上に銅ピラーのアレイを残した。ピラーは粗く見え、多くが、図2に示されるように「陥没穴」の中心を有した。平均%WID及び平均%TIRは、計算しなかった。ピラーは非常に不完全であり、このため、プロフィロメータは、それらを正確に読み取ることができなかった。
Claims (9)
- a)フォトレジストの層を備える基板を提供することであって、前記フォトレジストの層は複数の開口部を備える、提供することと、
b)1つ以上のα−アミノ酸と1つ以上のビスエポキシドとの1つ以上の反応生成物、電解質、1つ以上の促進剤、及び1つ以上の抑制剤を含む電気銅めっき浴を提供することと、
c)前記複数の開口部を有する前記フォトレジストの層を備える前記基板を前記電気銅めっき浴に浸漬することと、
d)複数の銅/フォトレジスト画定フィーチャを前記複数の開口部に電気めっきすることと、を含み、前記複数のフォトレジスト画定フィーチャは、−5%〜−1%の平均%TIRを含む、方法。 - 前記基板上の銅/フォトレジスト画定フィーチャのアレイの%WIDは、12%〜15%である、請求項1に記載の方法。
- 前記1つ以上のα−アミノ酸は、アルギニン及びリジンから選択される、請求項1に記載の方法。
- 前記1つ以上のビスエポキシドは、式:
- 前記ビスエポキシドは、式:
- 前記1つ以上の反応生成物は、前記電気銅めっき浴中に0.25ppm〜20ppmの量で存在する、請求項1に記載の方法。
- 電気めっきは、0.25ASD〜40ASDの電流密度で行われる、請求項1に記載の方法。
- 前記1つ以上の銅フォトレジスト画定フィーチャは、ピラー、ボンドパッド、または線幅/線間フィーチャである、請求項1に記載の方法。
- −5%〜−1%の平均%TIR及び12%〜15%の平均%WIDを有する、基板上のフォトレジスト画定フィーチャのアレイ。
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US62/201,860 | 2015-08-06 |
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JP2017222925A (ja) * | 2016-03-29 | 2017-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | メガサイズのフォトレジスト画定フィーチャを電気めっきすることが可能な電気銅めっき浴及び電気めっき方法 |
JP2019019405A (ja) * | 2017-07-14 | 2019-02-07 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | アルギニンとビスエポキシドとのコポリマーを含むニッケル電気めっき組成物及びニッケルを電気めっきする方法 |
JP2019143243A (ja) * | 2018-02-21 | 2019-08-29 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 改善された完全性を有する銅ピラーおよびその製造方法 |
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JP2019143243A (ja) * | 2018-02-21 | 2019-08-29 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 改善された完全性を有する銅ピラーおよびその製造方法 |
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US9932684B2 (en) | 2018-04-03 |
KR101799857B1 (ko) | 2017-11-22 |
JP6322672B2 (ja) | 2018-05-09 |
EP3128043A1 (en) | 2017-02-08 |
US20170037527A1 (en) | 2017-02-09 |
CN106435661A (zh) | 2017-02-22 |
CN106435661B (zh) | 2019-02-19 |
EP3128043B1 (en) | 2018-04-11 |
KR20170017738A (ko) | 2017-02-15 |
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