JP2019143243A - 改善された完全性を有する銅ピラーおよびその製造方法 - Google Patents
改善された完全性を有する銅ピラーおよびその製造方法 Download PDFInfo
- Publication number
- JP2019143243A JP2019143243A JP2019026372A JP2019026372A JP2019143243A JP 2019143243 A JP2019143243 A JP 2019143243A JP 2019026372 A JP2019026372 A JP 2019026372A JP 2019026372 A JP2019026372 A JP 2019026372A JP 2019143243 A JP2019143243 A JP 2019143243A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- tin
- pillar
- pillars
- electroplating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 title claims abstract description 258
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 255
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 248
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 229910000679 solder Inorganic materials 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000009713 electroplating Methods 0.000 claims description 81
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 38
- 239000002253 acid Substances 0.000 claims description 23
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 22
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 21
- 150000007513 acids Chemical class 0.000 claims description 17
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 15
- 229910001431 copper ion Inorganic materials 0.000 claims description 15
- 239000003112 inhibitor Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 abstract description 38
- 230000008569 process Effects 0.000 abstract description 14
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 44
- -1 halide ion Chemical class 0.000 description 31
- 239000011800 void material Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 14
- 229910001316 Ag alloy Inorganic materials 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 230000002378 acidificating effect Effects 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229920002873 Polyethylenimine Polymers 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- JAAIPIWKKXCNOC-UHFFFAOYSA-N 1h-tetrazol-1-ium-5-thiolate Chemical class SC1=NN=NN1 JAAIPIWKKXCNOC-UHFFFAOYSA-N 0.000 description 2
- IVIDDMGBRCPGLJ-UHFFFAOYSA-N 2,3-bis(oxiran-2-ylmethoxy)propan-1-ol Chemical compound C1OC1COC(CO)COCC1CO1 IVIDDMGBRCPGLJ-UHFFFAOYSA-N 0.000 description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 2
- KUAUJXBLDYVELT-UHFFFAOYSA-N 2-[[2,2-dimethyl-3-(oxiran-2-ylmethoxy)propoxy]methyl]oxirane Chemical compound C1OC1COCC(C)(C)COCC1CO1 KUAUJXBLDYVELT-UHFFFAOYSA-N 0.000 description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- PSBDWGZCVUAZQS-UHFFFAOYSA-N (dimethylsulfonio)acetate Chemical compound C[S+](C)CC([O-])=O PSBDWGZCVUAZQS-UHFFFAOYSA-N 0.000 description 1
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- HHNKCWROIOOUOO-UHFFFAOYSA-N 1-[2-(diethylazaniumyl)ethyl]tetrazole-5-thiolate Chemical compound CCN(CC)CCN1NN=NC1=S HHNKCWROIOOUOO-UHFFFAOYSA-N 0.000 description 1
- WTFAGPBUAGFMQX-UHFFFAOYSA-N 1-[2-[2-(2-aminopropoxy)propoxy]propoxy]propan-2-amine Chemical compound CC(N)COCC(C)OCC(C)OCC(C)N WTFAGPBUAGFMQX-UHFFFAOYSA-N 0.000 description 1
- LUOIEXVCCJQBDI-UHFFFAOYSA-N 1-ethylsulfanyl-6-(2-hydroxyethylsulfanyl)hexan-2-ol Chemical compound CCSCC(O)CCCCSCCO LUOIEXVCCJQBDI-UHFFFAOYSA-N 0.000 description 1
- IKQCSJBQLWJEPU-UHFFFAOYSA-N 2,5-dihydroxybenzenesulfonic acid Chemical compound OC1=CC=C(O)C(S(O)(=O)=O)=C1 IKQCSJBQLWJEPU-UHFFFAOYSA-N 0.000 description 1
- MHGUSQPDQPUNQD-UHFFFAOYSA-N 2-(2,2-disulfoethyldisulfanyl)ethane-1,1-disulfonic acid Chemical compound OS(=O)(=O)C(S(O)(=O)=O)CSSCC(S(O)(=O)=O)S(O)(=O)=O MHGUSQPDQPUNQD-UHFFFAOYSA-N 0.000 description 1
- LYIMNUUCUIRRBX-UHFFFAOYSA-N 2-(hydroxymethylsulfanyl)ethylsulfanylmethanol Chemical compound OCSCCSCO LYIMNUUCUIRRBX-UHFFFAOYSA-N 0.000 description 1
- HDPLHDGYGLENEI-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COCC1CO1 HDPLHDGYGLENEI-UHFFFAOYSA-N 0.000 description 1
- IRQHBCDQKOSIKT-UHFFFAOYSA-N 2-[14-(2-hydroxyethylsulfanyl)tetradecylsulfanyl]ethanol Chemical compound OCCSCCCCCCCCCCCCCCSCCO IRQHBCDQKOSIKT-UHFFFAOYSA-N 0.000 description 1
- GFIWSSUBVYLTRF-UHFFFAOYSA-N 2-[2-(2-hydroxyethylamino)ethylamino]ethanol Chemical compound OCCNCCNCCO GFIWSSUBVYLTRF-UHFFFAOYSA-N 0.000 description 1
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- FORJWQPDKXQQOG-UHFFFAOYSA-N 2-[4-(2-hydroxyethylsulfanyl)butylsulfanyl]ethanol Chemical compound OCCSCCCCSCCO FORJWQPDKXQQOG-UHFFFAOYSA-N 0.000 description 1
- JROOCDXTPKCUIO-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)CCOCC1CO1 JROOCDXTPKCUIO-UHFFFAOYSA-N 0.000 description 1
- SHKUUQIDMUMQQK-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COCCCCOCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 description 1
- 150000004786 2-naphthols Chemical class 0.000 description 1
- YXEXMVJHQLWNGG-UHFFFAOYSA-N 3-(3,3-disulfopropyldisulfanyl)propane-1,1-disulfonic acid Chemical compound OS(=O)(=O)C(S(O)(=O)=O)CCSSCCC(S(O)(=O)=O)S(O)(=O)=O YXEXMVJHQLWNGG-UHFFFAOYSA-N 0.000 description 1
- LTXRPFGDTYMYDS-UHFFFAOYSA-N 3-(3-hydroxypropylsulfanylmethylsulfanyl)propan-1-ol Chemical compound OCCCSCSCCCO LTXRPFGDTYMYDS-UHFFFAOYSA-N 0.000 description 1
- FULCXPQDMXUVSB-UHFFFAOYSA-N 3-(3-sulfanylpropylsulfonyloxy)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCOS(=O)(=O)CCCS FULCXPQDMXUVSB-UHFFFAOYSA-N 0.000 description 1
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- NSLRXAXIPBSNQO-UHFFFAOYSA-N 3-[6-(3-hydroxypropylsulfanyl)hexylsulfanyl]propan-1-ol Chemical compound OCCCSCCCCCCSCCCO NSLRXAXIPBSNQO-UHFFFAOYSA-N 0.000 description 1
- REEBJQTUIJTGAL-UHFFFAOYSA-N 3-pyridin-1-ium-1-ylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCC[N+]1=CC=CC=C1 REEBJQTUIJTGAL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 239000002202 Polyethylene glycol Substances 0.000 description 1
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- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- FODHYMCJDIAKFC-UHFFFAOYSA-N [3-(5-sulfanylidene-2h-tetrazol-1-yl)phenyl]urea Chemical compound NC(=O)NC1=CC=CC(N2C(N=NN2)=S)=C1 FODHYMCJDIAKFC-UHFFFAOYSA-N 0.000 description 1
- AFJJOQJOZOLHGT-UHFFFAOYSA-N [Cu].[Cu].[Sn] Chemical compound [Cu].[Cu].[Sn] AFJJOQJOZOLHGT-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 239000004599 antimicrobial Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000005362 aryl sulfone group Chemical group 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004181 carboxyalkyl group Chemical group 0.000 description 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- YRNNKGFMTBWUGL-UHFFFAOYSA-L copper(ii) perchlorate Chemical compound [Cu+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O YRNNKGFMTBWUGL-UHFFFAOYSA-L 0.000 description 1
- MRYMYQPDGZIGDM-UHFFFAOYSA-L copper;4-methylbenzenesulfonate Chemical compound [Cu+2].CC1=CC=C(S([O-])(=O)=O)C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 MRYMYQPDGZIGDM-UHFFFAOYSA-L 0.000 description 1
- RIOSFUBRIQHOMS-UHFFFAOYSA-L copper;benzenesulfonate Chemical compound [Cu+2].[O-]S(=O)(=O)C1=CC=CC=C1.[O-]S(=O)(=O)C1=CC=CC=C1 RIOSFUBRIQHOMS-UHFFFAOYSA-L 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- SSOVMNXYUYFJBU-UHFFFAOYSA-L copper;ethanesulfonate Chemical compound [Cu+2].CCS([O-])(=O)=O.CCS([O-])(=O)=O SSOVMNXYUYFJBU-UHFFFAOYSA-L 0.000 description 1
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 description 1
- NPSDYIWFLLIHOT-UHFFFAOYSA-L copper;propane-1-sulfonate Chemical compound [Cu+2].CCCS([O-])(=O)=O.CCCS([O-])(=O)=O NPSDYIWFLLIHOT-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- WIYCQLLGDNXIBA-UHFFFAOYSA-L disodium;3-(3-sulfonatopropyldisulfanyl)propane-1-sulfonate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)CCCSSCCCS([O-])(=O)=O WIYCQLLGDNXIBA-UHFFFAOYSA-L 0.000 description 1
- 150000004662 dithiols Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- VMYAHWLKMIFKAL-UHFFFAOYSA-N hydroxymethylsulfanylmethylsulfanylmethanol Chemical compound OCSCSCO VMYAHWLKMIFKAL-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- NMUSZBNDJXWFFR-UHFFFAOYSA-N n-[4-(5-sulfanylidene-2h-tetrazol-1-yl)phenyl]acetamide Chemical compound C1=CC(NC(=O)C)=CC=C1N1C(S)=NN=N1 NMUSZBNDJXWFFR-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical class CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 238000000847 optical profilometry Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- WWFLSAATMFFRAG-UHFFFAOYSA-M potassium;1-sulfanylpropane-1-sulfonate Chemical compound [K+].CCC(S)S([O-])(=O)=O WWFLSAATMFFRAG-UHFFFAOYSA-M 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229940071575 silver citrate Drugs 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 1
- 229910000367 silver sulfate Inorganic materials 0.000 description 1
- NEMJXQHXQWLYDM-JJKGCWMISA-M silver;(2r,3s,4r,5r)-2,3,4,5,6-pentahydroxyhexanoate Chemical compound [Ag+].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O NEMJXQHXQWLYDM-JJKGCWMISA-M 0.000 description 1
- LMEWRZSPCQHBOB-UHFFFAOYSA-M silver;2-hydroxypropanoate Chemical compound [Ag+].CC(O)C([O-])=O LMEWRZSPCQHBOB-UHFFFAOYSA-M 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- FRTIVUOKBXDGPD-UHFFFAOYSA-M sodium;3-sulfanylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CCCS FRTIVUOKBXDGPD-UHFFFAOYSA-M 0.000 description 1
- KQFAFFYKLIBKDE-UHFFFAOYSA-M sodium;ethanesulfonate Chemical compound [Na+].CCS([O-])(=O)=O KQFAFFYKLIBKDE-UHFFFAOYSA-M 0.000 description 1
- NPAWNPCNZAPTKA-UHFFFAOYSA-M sodium;propane-1-sulfonate Chemical compound [Na+].CCCS([O-])(=O)=O NPAWNPCNZAPTKA-UHFFFAOYSA-M 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229940117986 sulfobetaine Drugs 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical class [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- QUTYHQJYVDNJJA-UHFFFAOYSA-K trisilver;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Ag+].[Ag+].[Ag+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QUTYHQJYVDNJJA-UHFFFAOYSA-K 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/49838—Geometry or layout
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/1146—Plating
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- H01L2224/1147—Manufacturing methods using a lift-off mask
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- H01L2224/11849—Reflowing
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Abstract
Description
a)フォトレジスト層を含む基板であって、フォトレジスト層は複数の開口を含む、基板を用意することと、
b)1種以上の銅イオン源、1種以上の酸、1種以上の塩化物源、1種以上のレベラー、1種以上の促進剤、および1種以上の抑制剤を含む、第1の銅電気めっき浴を用意することと、
c)第1の銅電気めっき浴中に複数の開口を有するフォトレジスト層を含む基板を浸漬することと、
d)第1の電流密度で複数の開口のそれぞれに銅ピラーの第1の区分を電気めっきし、続いて第1の銅電気めっき浴で、第1の電流密度よりも低い電流密度で複数の開口のそれぞれに銅ピラーの第2の区分を電気めっきするか、あるいは、水、1種以上の銅イオン源、1種以上の酸、ならびに、任意に1種以上の塩化物源、1種以上のレベラー、1種以上の促進剤、および1種以上の抑制剤からなる第2の銅電気めっき浴で、より低い電流密度で複数の開口のそれぞれに銅ピラーの第2の区分を電気めっきすることと、
e)各銅ピラーの第2の区分の頂部に錫または錫合金はんだバンプを堆積させることと、
f)フォトレジストを基板から剥離し、各銅ピラーの第2の区分の頂部に錫または錫合金はんだバンプを有する銅ピラーのアレイを残すことと、
g)アレイをリフローすることと、を含む銅ピラーを電気めっきする方法を含む。
TIR%=[高さ中央−高さ辺]/高さ最大×100
式中、高さ中央は、その中央軸に沿って測定されたピラーの高さであり、高さ辺は、辺上の最高点でその辺に沿って測定されたピラーの高さである。高さ最大は、ピラーの底部からその頂部の最も高い位置までの高さである。高さ最大は正規化係数である。
TIR=高さ中央−高さ辺
高さ中央と高さ辺は上で定義されたとおりである。
V%=銅ピラーの銅から銅−錫金属間界面内の1〜5μmまでの、界面の長さ(μm)に沿ってかつ界面の幅内で数えたボイドの数の全長/ピラー直径(μm)×100
ボイド形成が減少した銅ピラー
以下の表1に開示されている成分を有する水性酸性銅電気めっき浴を調製する。
厚さ50μmのパターン化フォトレジストおよび複数の開口を有する300mmシリコンウエハセグメント(ワシントン州バンクーバーのIMAT Inc.から入手可能)を銅電気めっき浴に浸漬する。アノードは可溶性銅電極である。ウエハとアノードを整流器に接続し、柱状形態を有するピラーの形成を可能にする円形である開口の底部の露出した金属シード層上に複数の銅ピラーを電気めっきする。平均直径45μmのピラーの形成を可能にするために、開口径は50μmである。銅電気めっき浴の温度は、めっきの間中25℃である。銅ピラーの最初の33μm(第1の垂直区分)のめっき中の初期平均電流密度は20ASDであり、続いて銅ピラーの最後の2μm(第2の垂直区分)に対して平均電流密度を0.5ASDまで減少させる。銅ピラーをそれらの最終高さ35μmまで電気めっきするための全体の平均電流密度は14.9ASDである。
TIR%=[高さ中央−高さ辺]/高さ最大×100
TIR=高さ中央−高さ辺
ピラーのTIR%は約−7.9%と決定される。ピラーは皿形または凹形の頂部形態を有する。
1.はんだバンプを有する各銅ピラーの(中心軸における)断面SEM画像を受け取る、
2.ImageJプログラムで画像を開く、
3.画像のスケールバーにラインを引く(黄色のライン)、
4.「分析」−「スケールの設定」に進み、スケールに基づいて「既知の距離」を入力して「OK」を押す、
5.「固定長ラインツール」を右クリックして、「所望のライン長」を45μmに設定する(銅ピラーの頂部に沿った銅−錫金属間部の長さにほぼ等しい)、
6.「中心(centered)」オプションを選択して、「OK」を押す、
7.Cu−Cu3Sn IMCラインの真下のピラーの中央にカーソルを置く、
8.「長方形」ツールを選択し、45μmのラインに沿ってCu−Cu3Sn IMCをとらえる長方形を描く、
9.「画像」と「トリミング」に進む、そして
10.この時点で、ボイドを拡大し、ボイドの長さまたは直径に沿ってラインを引き、ボイドの長さまたは直径を測定する。
銅−錫金属間界面の長さ(μm)に沿っておよび銅−錫金属間界面の幅または厚さ1μm以内で計数されたボイド数の全長の合計/ピラー直径(μm)×100
銅ピラーの最後の2μm(第2の垂直区分)のめっき中に印加される電流密度が4ASDであることを除いて、上記の実施例1に開示された方法を繰り返す。銅ピラーの平均めっき速度は16.3ASDである。次に銅ピラーの頂部を表2に開示された錫−銀浴からの錫−銀はんだバンプでめっきする。銅ピラーは、光学白色光LEICA DCM 3D顕微鏡を用いて測定したときに約−7.5%のTIR%を有する。頂部形態は皿形または凹形である。フォトレジストを剥離し、錫−銀バンプを有する銅ピラーのアレイを上記の方法に従ってリフローする。
銅ピラーの最後の2μm(第2の垂直区分)のめっき中に印加される電流密度が6ASDであることを除いて、上記の実施例1に開示された方法を繰り返す。銅ピラーの平均めっき速度は17.6ASDである。次に銅ピラーの頂部を表2に開示された錫−銀浴からの錫−銀はんだバンプでめっきする。銅ピラーは、約−8%のTIR%を有する。ピラーの頂部は皿形の形態を有する。フォトレジストを剥離し、錫−銀バンプを有する銅ピラーのアレイを上記の実施例1に記載の方法に従ってリフローする。
銅ピラーの最後の2μm(第2の垂直区分)のめっき中に印加される電流密度が8ASDであることを除いて、上記の実施例1に開示された方法を繰り返す。銅ピラーの平均めっき速度は18.4ASDである。次に銅ピラーの頂部を表2に開示された錫−銀浴からの錫−銀はんだバンプでめっきする。銅ピラーは、約−8.2%のTIR%を有する。頂部の形態は皿形である。フォトレジストを剥離し、錫−銀バンプを有する銅ピラーのアレイを上記の実施例1に記載の方法に従ってリフローする。
銅ピラーの最後の2μm(第2の垂直区分)のめっき中に印加される電流密度が10ASDであることを除いて、上記の実施例1に開示された方法を繰り返す。銅ピラーの平均めっき速度は18.9ASDである。次に銅ピラーの頂部を表2に開示された錫−銀浴からの錫−銀はんだバンプでめっきする。銅ピラーはTIR%または約−8.3%を有する。銅ピラーの頂部は皿形の形態を有する。フォトレジストを剥離し、錫−銀バンプを有する銅ピラーのアレイを上記の実施例1に記載の方法に従ってリフローする。
銅−錫界面に高いボイド形成を有する銅ピラー
厚さ50μmのパターン化フォトレジストおよび複数の開口を有する300mmシリコンウエハセグメント(ワシントン州バンクーバーのIMAT,Inc.から入手可能)を、実施例1〜5の表1の銅電気めっき浴中に浸漬する。アノードは可溶性銅電極である。ウエハとアノードを整流器に接続し、柱状形態を有するピラーの形成を可能にする円形である開口の底部の露出した金属シード層上に銅ピラーを電気めっきする。平均直径45μmのピラーの形成を可能にするために、開口径は50μmである。銅電気めっき浴の温度は、めっきの間中25℃である。35μmの高さの銅ピラーのめっき中の平均電流密度は、上記実施例1〜5におけるような平均電流密度のいかなる減少もなく、20ASDである。
Claims (6)
- 水平基部と、底部側および前記底部側とは反対側の頂部側を含む垂直区分と、を含む、銅ピラーであって、前記垂直区分の前記底部側が前記水平基部に接合しており、錫または錫合金はんだバンプが、銅−錫金属間界面によって前記垂直区分の前記頂部側に接合しており、前記銅−錫金属間界面の長さに沿って、前記銅ピラーの銅から5μmの前記銅−錫金属間界面内まで、V%=20%以下である、銅ピラー。
- 前記V%は、0.5%〜15%である、請求項1に記載の銅ピラー。
- 前記銅ピラーの前記頂部側は、平坦、ドーム形、または皿形の形態を含む、請求項1に記載の銅ピラー。
- 銅ピラーを電気めっきする方法であって、
a)フォトレジスト層を含む基板であって、前記フォトレジスト層が複数の開口を含む、基板を用意することと、
b)1種以上の銅イオン源、1種以上の酸、1種以上の塩化物源、1種以上のレベラー、1種以上の促進剤、および1種以上の抑制剤を含む、第1の銅電気めっき浴を用意することと、
c)前記第1の銅電気めっき浴中に前記複数の開口を有する前記フォトレジスト層を含む前記基板を浸漬することと、
d)第1の電流密度で前記複数の開口のそれぞれに銅ピラーの第1の区分を電気めっきし、続いて前記第1の銅電気めっき浴で、前記第1の電流密度よりも低い電流密度で前記複数の開口のそれぞれに前記銅ピラーの第2の区分を電気めっきするか、あるいは、水、1種以上の銅イオン源、1種以上の酸、ならびに任意に1種以上の塩化物源、1種以上のレベラー、1種以上の促進剤、および1種以上の抑制剤からなる第2の銅電気めっき浴で、前記より低い電流密度で前記複数の開口のそれぞれに前記銅ピラーの前記第2の区分を電気めっきすることと、
e)各銅ピラーの前記第2の区分の頂部に錫または錫合金はんだバンプを堆積させることと、
f)前記フォトレジストを前記基板から剥離し、各銅ピラーの前記第2の区分の前記頂部に錫または錫合金はんだバンプを有する銅ピラーのアレイを残すことと、
g)前記アレイをリフローすることと、を含む、方法。 - 前記第1の電流密度が10ASDより大きい、請求項2に記載の方法。
- 前記第2の電流密度が10ASD以下である、請求項2に記載の方法。
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JP2003253490A (ja) * | 2002-02-27 | 2003-09-10 | Hideo Honma | ビアホール及びスルーホールを有する基板のめっき方法 |
JP2017036502A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | イミダゾール化合物と、ビスエポキシドと、ハロベンジル化合物との反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017036500A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | イミダゾールとビスエポキシド化合物との反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017036501A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | アルファアミノ酸とビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017036499A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ピリジルアルキルアミンとビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017145502A (ja) * | 2016-02-15 | 2017-08-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | スルーホールを充填してボイド及び他の欠陥を低減する方法 |
JP2017222925A (ja) * | 2016-03-29 | 2017-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | メガサイズのフォトレジスト画定フィーチャを電気めっきすることが可能な電気銅めっき浴及び電気めっき方法 |
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TWI434965B (zh) * | 2008-05-28 | 2014-04-21 | Mitsui Mining & Smelting Co | A roughening method for copper foil, and a copper foil for a printed wiring board which is obtained by the roughening method |
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CN103290438B (zh) * | 2013-06-25 | 2015-12-02 | 深圳市创智成功科技有限公司 | 用于晶圆级封装的电镀铜溶液及电镀方法 |
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JP2003253490A (ja) * | 2002-02-27 | 2003-09-10 | Hideo Honma | ビアホール及びスルーホールを有する基板のめっき方法 |
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JP2017036500A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | イミダゾールとビスエポキシド化合物との反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017036501A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | アルファアミノ酸とビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017036499A (ja) * | 2015-08-06 | 2017-02-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ピリジルアルキルアミンとビスエポキシドとの反応生成物を含有する電気銅めっき浴からフォトレジスト画定フィーチャを電気めっきする方法 |
JP2017145502A (ja) * | 2016-02-15 | 2017-08-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | スルーホールを充填してボイド及び他の欠陥を低減する方法 |
JP2017222925A (ja) * | 2016-03-29 | 2017-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | メガサイズのフォトレジスト画定フィーチャを電気めっきすることが可能な電気銅めっき浴及び電気めっき方法 |
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JP6757814B2 (ja) | 2020-09-23 |
TWI700400B (zh) | 2020-08-01 |
US20200266165A1 (en) | 2020-08-20 |
KR20190100867A (ko) | 2019-08-29 |
JP6960502B2 (ja) | 2021-11-05 |
KR102172625B1 (ko) | 2020-11-02 |
US20190259722A1 (en) | 2019-08-22 |
CN110176441A (zh) | 2019-08-27 |
TW201937005A (zh) | 2019-09-16 |
JP2020125547A (ja) | 2020-08-20 |
CN110176441B (zh) | 2023-08-01 |
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