KR101779408B1 - 이미다졸 화합물, 비스에폭사이드 및 할로벤질 화합물의 반응 산물을 함유하는 구리 전기도금조로부터 포토레지스트 정의된 특징부의 전기도금 방법 - Google Patents

이미다졸 화합물, 비스에폭사이드 및 할로벤질 화합물의 반응 산물을 함유하는 구리 전기도금조로부터 포토레지스트 정의된 특징부의 전기도금 방법 Download PDF

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KR101779408B1
KR101779408B1 KR1020160097687A KR20160097687A KR101779408B1 KR 101779408 B1 KR101779408 B1 KR 101779408B1 KR 1020160097687 A KR1020160097687 A KR 1020160097687A KR 20160097687 A KR20160097687 A KR 20160097687A KR 101779408 B1 KR101779408 B1 KR 101779408B1
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South Korea
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copper
photoresist
alkyl
electroplating
linear
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KR20170017739A (ko
Inventor
토르세트 매튜
니아짐베토바 주흐라
친 이
웨어팅크 줄리아
코주크 줄리아
레딩턴 에릭
르페브르 마크
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
다우 글로벌 테크놀로지스 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D233/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings
    • C07D233/54—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members
    • C07D233/56—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
    • C07D303/02—Compounds containing oxirane rings
    • C07D303/04—Compounds containing oxirane rings containing only hydrogen and carbon atoms in addition to the ring oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Epoxy Resins (AREA)
KR1020160097687A 2015-08-06 2016-07-31 이미다졸 화합물, 비스에폭사이드 및 할로벤질 화합물의 반응 산물을 함유하는 구리 전기도금조로부터 포토레지스트 정의된 특징부의 전기도금 방법 Active KR101779408B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562201867P 2015-08-06 2015-08-06
US62/201,867 2015-08-06

Publications (2)

Publication Number Publication Date
KR20170017739A KR20170017739A (ko) 2017-02-15
KR101779408B1 true KR101779408B1 (ko) 2017-09-18

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Country Link
US (1) US10006136B2 (enExample)
EP (1) EP3128044B1 (enExample)
JP (1) JP6278535B2 (enExample)
KR (1) KR101779408B1 (enExample)
CN (1) CN106435662B (enExample)
TW (1) TWI600804B (enExample)

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US9932684B2 (en) * 2015-08-06 2018-04-03 Rohm And Haas Electronic Materials Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of alpha amino acids and bisepoxides
US10190228B2 (en) * 2016-03-29 2019-01-29 Rohm And Haas Electronic Materials Llc Copper electroplating baths and electroplating methods capable of electroplating megasized photoresist defined features
US10508349B2 (en) * 2016-06-27 2019-12-17 Rohm And Haas Electronic Materials Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of pyrazole compounds and bisepoxides
TWI762731B (zh) * 2017-11-08 2022-05-01 美商羅門哈斯電子材料有限公司 銅電鍍組合物及在基板上電鍍銅之方法
TWI703148B (zh) * 2017-11-08 2020-09-01 美商羅門哈斯電子材料有限公司 銅電鍍組合物及在基板上電鍍銅之方法
US20190259722A1 (en) * 2018-02-21 2019-08-22 Rohm And Haas Electronic Materials Llc Copper pillars having improved integrity and methods of making the same
JP7533916B2 (ja) * 2019-02-01 2024-08-14 石原ケミカル株式会社 電気銅メッキ又は銅合金メッキ浴
WO2020158418A1 (ja) * 2019-02-01 2020-08-06 石原ケミカル株式会社 電気銅メッキ又は銅合金メッキ浴
CN115894908B (zh) * 2021-09-30 2025-06-06 华为技术有限公司 聚合物、整平剂及其制备方法、电镀液和电镀方法

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TWI600804B (zh) 2017-10-01
JP6278535B2 (ja) 2018-02-14
US20170037528A1 (en) 2017-02-09
CN106435662B (zh) 2018-11-30
EP3128044B1 (en) 2018-06-20
US10006136B2 (en) 2018-06-26
KR20170017739A (ko) 2017-02-15
JP2017036502A (ja) 2017-02-16
EP3128044A1 (en) 2017-02-08
TW201712159A (zh) 2017-04-01
CN106435662A (zh) 2017-02-22

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