JP6277017B2 - 光デバイス - Google Patents

光デバイス Download PDF

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Publication number
JP6277017B2
JP6277017B2 JP2014040056A JP2014040056A JP6277017B2 JP 6277017 B2 JP6277017 B2 JP 6277017B2 JP 2014040056 A JP2014040056 A JP 2014040056A JP 2014040056 A JP2014040056 A JP 2014040056A JP 6277017 B2 JP6277017 B2 JP 6277017B2
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JP
Japan
Prior art keywords
optical device
base
light
device wafer
modified layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014040056A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015165532A (ja
Inventor
幸太 深谷
幸太 深谷
直俊 桐原
直俊 桐原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2014040056A priority Critical patent/JP6277017B2/ja
Priority to TW104103269A priority patent/TWI639253B/zh
Priority to SG10201501238UA priority patent/SG10201501238UA/en
Priority to KR1020150027962A priority patent/KR102155917B1/ko
Priority to CN201510092333.6A priority patent/CN104900777B/zh
Publication of JP2015165532A publication Critical patent/JP2015165532A/ja
Application granted granted Critical
Publication of JP6277017B2 publication Critical patent/JP6277017B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Led Devices (AREA)
JP2014040056A 2014-03-03 2014-03-03 光デバイス Active JP6277017B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014040056A JP6277017B2 (ja) 2014-03-03 2014-03-03 光デバイス
TW104103269A TWI639253B (zh) 2014-03-03 2015-01-30 光裝置
SG10201501238UA SG10201501238UA (en) 2014-03-03 2015-02-17 Optical device
KR1020150027962A KR102155917B1 (ko) 2014-03-03 2015-02-27 광 디바이스
CN201510092333.6A CN104900777B (zh) 2014-03-03 2015-03-02 光器件晶片的加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014040056A JP6277017B2 (ja) 2014-03-03 2014-03-03 光デバイス

Publications (2)

Publication Number Publication Date
JP2015165532A JP2015165532A (ja) 2015-09-17
JP6277017B2 true JP6277017B2 (ja) 2018-02-07

Family

ID=54033313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014040056A Active JP6277017B2 (ja) 2014-03-03 2014-03-03 光デバイス

Country Status (5)

Country Link
JP (1) JP6277017B2 (ko)
KR (1) KR102155917B1 (ko)
CN (1) CN104900777B (ko)
SG (1) SG10201501238UA (ko)
TW (1) TWI639253B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6605278B2 (ja) * 2015-09-29 2019-11-13 浜松ホトニクス株式会社 レーザ加工方法
JP6605277B2 (ja) * 2015-09-29 2019-11-13 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP6745165B2 (ja) * 2016-08-09 2020-08-26 株式会社ディスコ ウェーハの加工方法
JP6746211B2 (ja) * 2016-09-21 2020-08-26 株式会社ディスコ ウェーハの加工方法
JP6775880B2 (ja) * 2016-09-21 2020-10-28 株式会社ディスコ ウェーハの加工方法
WO2020044980A1 (ja) * 2018-08-27 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 発光素子、及び発光素子の製造方法
US12103111B2 (en) * 2019-03-28 2024-10-01 Tokyo Electron Limited Processing apparatus and processing method
CN111276577B (zh) * 2019-12-18 2021-12-10 北京中科优唯科技有限公司 一种led芯片的制造方法
JP7499116B2 (ja) * 2020-08-25 2024-06-13 シャープ福山レーザー株式会社 画像表示素子
JP7206550B2 (ja) 2020-09-30 2023-01-18 日亜化学工業株式会社 発光素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10305420A (ja) 1997-03-04 1998-11-17 Ngk Insulators Ltd 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法
JP2007234707A (ja) * 2006-02-28 2007-09-13 Rohm Co Ltd 半導体発光素子
CN2891295Y (zh) * 2006-03-01 2007-04-18 东莞市福地电子材料有限公司 一种发光二极管
JP5221007B2 (ja) * 2006-05-31 2013-06-26 アイシン精機株式会社 発光ダイオードチップ及びウェハ分割加工方法
JP4909657B2 (ja) 2006-06-30 2012-04-04 株式会社ディスコ サファイア基板の加工方法
JP2008300645A (ja) * 2007-05-31 2008-12-11 Sharp Corp 窒化物系半導体ｌｅｄチップの製造方法
JP2011134955A (ja) * 2009-12-25 2011-07-07 Disco Abrasive Syst Ltd 板状材料からのチップ状部品の生産方法
TW201242122A (en) * 2011-04-15 2012-10-16 Chi Mei Lighting Tech Corp Light-emitting diode device
KR101861997B1 (ko) * 2011-10-31 2018-05-29 엘지이노텍 주식회사 발광소자 및 발광소자 제조방법

Also Published As

Publication number Publication date
CN104900777A (zh) 2015-09-09
JP2015165532A (ja) 2015-09-17
TW201535781A (zh) 2015-09-16
SG10201501238UA (en) 2015-10-29
KR102155917B1 (ko) 2020-09-14
KR20150103631A (ko) 2015-09-11
TWI639253B (zh) 2018-10-21
CN104900777B (zh) 2019-05-31

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