JP6265496B2 - デバイス上にコーティングを堆積させる改善された堆積法 - Google Patents

デバイス上にコーティングを堆積させる改善された堆積法 Download PDF

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Publication number
JP6265496B2
JP6265496B2 JP2014527736A JP2014527736A JP6265496B2 JP 6265496 B2 JP6265496 B2 JP 6265496B2 JP 2014527736 A JP2014527736 A JP 2014527736A JP 2014527736 A JP2014527736 A JP 2014527736A JP 6265496 B2 JP6265496 B2 JP 6265496B2
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sam
depositing
self
processing chamber
assembled monolayer
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JP2014531508A5 (enExample
JP2014531508A (ja
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オハラ，アンソニー
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Memsstar Ltd
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Memsstar Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0005—Anti-stiction coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00952—Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/112—Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Formation Of Insulating Films (AREA)
JP2014527736A 2011-09-01 2012-08-31 デバイス上にコーティングを堆積させる改善された堆積法 Active JP6265496B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1115105.7A GB2494168B (en) 2011-09-01 2011-09-01 Improved deposition technique for micro electro-mechanical structures (MEMS)
GB1115105.7 2011-09-01
PCT/GB2012/052127 WO2013030576A1 (en) 2011-09-01 2012-08-31 Improved deposition technique for depositing a coating on a device

Publications (3)

Publication Number Publication Date
JP2014531508A JP2014531508A (ja) 2014-11-27
JP2014531508A5 JP2014531508A5 (enExample) 2015-10-08
JP6265496B2 true JP6265496B2 (ja) 2018-01-24

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JP2014527736A Active JP6265496B2 (ja) 2011-09-01 2012-08-31 デバイス上にコーティングを堆積させる改善された堆積法

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Country Link
US (1) US20140308822A1 (enExample)
EP (1) EP2751301A1 (enExample)
JP (1) JP6265496B2 (enExample)
KR (1) KR20140068014A (enExample)
CN (1) CN103717783B (enExample)
GB (1) GB2494168B (enExample)
WO (1) WO2013030576A1 (enExample)

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KR20230158462A (ko) 2021-03-23 2023-11-20 토레 엔지니어링 가부시키가이샤 적층체 제조 장치 및 자기 조직화 단분자막의 형성 방법

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US10273577B2 (en) * 2015-11-16 2019-04-30 Applied Materials, Inc. Low vapor pressure aerosol-assisted CVD
EP3449500A4 (en) * 2016-04-25 2020-04-22 Applied Materials, Inc. CHEMICAL DISTRIBUTION CHAMBER FOR SINGLE-ASSEMBLED SINGLE-LAYER TREATMENTS
US10358715B2 (en) * 2016-06-03 2019-07-23 Applied Materials, Inc. Integrated cluster tool for selective area deposition
US10504715B2 (en) 2016-07-21 2019-12-10 Tokyo Electron Limited Back-side friction reduction of a substrate
US10784100B2 (en) 2016-07-21 2020-09-22 Tokyo Electron Limited Back-side friction reduction of a substrate
US10833076B2 (en) 2016-09-30 2020-11-10 Intel Corporation Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse
US10727044B2 (en) 2017-09-21 2020-07-28 Honeywell International Inc. Fill material to mitigate pattern collapse
US10748757B2 (en) 2017-09-21 2020-08-18 Honeywell International, Inc. Thermally removable fill materials for anti-stiction applications
CN111433886B (zh) * 2017-11-29 2024-07-30 东京毅力科创株式会社 衬底的背侧摩擦减小
JP7022589B2 (ja) * 2018-01-05 2022-02-18 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ記憶媒体
KR102184006B1 (ko) * 2019-04-09 2020-11-30 한국과학기술연구원 의료 기기용 렌즈 및 이의 제조방법
CN110395689B (zh) * 2019-06-24 2024-03-22 金华职业技术学院 一种微颗粒的组装方法
CN110241403B (zh) * 2019-07-23 2024-09-06 芜湖通潮精密机械股份有限公司 一种减小温差的加热器及其制作方法和应用
JP2022151518A (ja) * 2021-03-23 2022-10-07 株式会社魁半導体 積層体製造装置及び自己組織化単分子膜の形成方法
US20230212747A1 (en) * 2021-12-31 2023-07-06 Applied Materials, Inc. Apparatus and Methods for Self-Assembled Monolayer (SAM) Deposition in Semiconductor Equipment

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Also Published As

Publication number Publication date
KR20140068014A (ko) 2014-06-05
GB2494168A (en) 2013-03-06
GB201115105D0 (en) 2011-10-19
JP2014531508A (ja) 2014-11-27
US20140308822A1 (en) 2014-10-16
CN103717783B (zh) 2016-11-16
EP2751301A1 (en) 2014-07-09
CN103717783A (zh) 2014-04-09
WO2013030576A1 (en) 2013-03-07
GB2494168B (en) 2014-04-09

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