JP7354416B2 - ダイヤモンドフィルムを形成する方法 - Google Patents
ダイヤモンドフィルムを形成する方法 Download PDFInfo
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- JP7354416B2 JP7354416B2 JP2022509014A JP2022509014A JP7354416B2 JP 7354416 B2 JP7354416 B2 JP 7354416B2 JP 2022509014 A JP2022509014 A JP 2022509014A JP 2022509014 A JP2022509014 A JP 2022509014A JP 7354416 B2 JP7354416 B2 JP 7354416B2
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- 229910003460 diamond Inorganic materials 0.000 title claims description 36
- 239000010432 diamond Substances 0.000 title claims description 36
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 146
- 239000000758 substrate Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 72
- 239000000178 monomer Substances 0.000 claims description 60
- 239000003999 initiator Substances 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 229920000642 polymer Polymers 0.000 claims description 19
- 239000002904 solvent Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 8
- 125000005843 halogen group Chemical group 0.000 claims description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
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- 125000000304 alkynyl group Chemical group 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 5
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 5
- 239000012965 benzophenone Substances 0.000 claims description 5
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 5
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- 238000002207 thermal evaporation Methods 0.000 claims description 5
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 5
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical compound OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
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- 239000010703 silicon Substances 0.000 description 8
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
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- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
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- 125000001424 substituent group Chemical group 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Description
R1、R2、R3およびR4は各々独立に、水素、ビニル基、アクリレート基、スチレン基、アルキニル基、ハロゲン化物基、エポキシド基、アミン基、カルボン酸基、エステル基、およびアルキル基のうちの1つまたは複数を含む。形成する方法は、ポリマー化可能シード層を硬化し、基板上にポリアダマンタン層を形成するために、1分から2時間の範囲の期間で100nmから700nmの範囲の波長を有する光源にポリマー化可能シード層を曝すことと、ポリマー化可能シード層の未硬化部分を取り除くことと、ポリアダマンタン層上にナノ結晶性ダイヤモンド層を堆積することとを含む。
R1、R2、R3およびR4は各々独立に、水素、ビニル基、アクリレート基、スチレン基、アルキニル基、ハロゲン化物基、エポキシド基、アミン基、カルボン酸基、エステル基、およびアルキル基のうちの1つまたは複数を含む。
Claims (19)
- フィルムを形成する方法であって、
ポリマー化可能シード層を形成するために、基板上にアダマンタンモノマーおよび開始剤を堆積することと、
ポリアダマンタン層を形成するために、前記ポリマー化可能シード層を硬化することと、
前記ポリアダマンタン層上にナノ結晶性ダイヤモンド層を堆積することと
を含む、方法。 - 前記ポリマー化可能シード層を堆積することは、熱蒸発、スピンコーティング、またはドロップキャスティングのうちの1つまたは複数を含む、請求項1に記載の方法。
- 前記ポリマー化可能シード層を堆積することは、前記基板上に前記開始剤および前記アダマンタンモノマーをスピンコーティングすることと、硬化前に、25℃から400℃の範囲の温度で前記ポリマー化可能シード層を加熱することとを含む、請求項2に記載の方法。
- 前記ポリマー化可能シード層を堆積することは、前記アダマンタンモノマーおよび前記開始剤の混合物を紫外線光に曝して、ポリアダマンタンシード層を提供することを含む、請求項2に記載の方法。
- 前記開始剤はベンゾフェノン、チオキサントン、ベンゾインエーテル、ベンジルケタール、ジアルコキシアセトフェノン、ヒドロキシアルキルフェノン、アミノアルキルフェノン、アシルホスフィンオキシド、およびそれらの誘導体、のうちの1つまたは複数を含む、請求項1に記載の方法。
- 前記ポリマー化可能シード層を硬化することは、100nmから700nmの範囲の波長を有する光源に前記ポリマー化可能シード層を曝すことを含む、請求項1に記載の方法。
- 前記ポリマー化可能シード層は、1分から2時間の範囲の期間で前記光源に曝される、請求項7に記載の方法。
- 前記ポリアダマンタン層は、1つまたは複数のポリマー化された分子を含む、請求項1に記載の方法。
- 前記1つまたは複数のポリマー化された分子は、500g/モルから60,000g/モルの範囲の分子重量を有する、請求項9に記載の方法。
- 前記1つまたは複数のポリマー化された分子は、5から500の繰り返しアダマンタンモノマーを含む、請求項9に記載の方法。
- 前記1つまたは複数のポリマー化された分子は、前記アダマンタンモノマーと、ランダム共重合体、ブロック共重合体、グラフト共重合体、および分岐共重合体からなる群から選択された1つまたは複数のポリマー化可能ユニットとを含む混合物を共重合することによって形成される、請求項9に記載の方法。
- 硬化の前に、前記ポリマー化可能シード層上にマスク層を形成することをさらに含む、請求項1に記載の方法。
- 25℃から400℃の範囲の温度で前記基板を加熱する、または前記基板を化学的に洗浄することによって、未硬化部分を取り除くことをさらに含む、請求項1に記載の方法。
- 前記ナノ結晶性ダイヤモンド層を堆積することは、原子層堆積(ALD)、物理的気相堆積(PVD)、化学気相堆積(CVD)、マイクロ波化学気相堆積(MWCVD)、マイクロ波プラズマ化学気相堆積(MWPCVD)、プラズマ増強原子層堆積(PEALD)、およびプラズマ増強化学気相堆積(PECVD)のうちの1つまたは複数を含む、請求項14に記載の方法。
- ダイヤモンドフィルムを形成する方法であって、
ポリマー化可能シード層を形成するために基板上へとアダマンタンモノマーおよび開始剤を熱蒸発させることであって、前記開始剤はベンゾフェノン、チオキサントン、ベンゾインエーテル、ベンジルケタール、ジアルコキシアセトフェノン、ヒドロキシアルキルフェノン、アミノアルキルフェノン、アシルホスフィンオキシド、およびそれらの誘導体、のうちの1つまたは複数を含み、前記アダマンタンモノマーは、以下の式(I)、(II)、(III)、および(IV)からなる群から選択された構造を有し、
ここで、R1、R2、R3およびR4は各々独立に、水素、ビニル基、アクリレート基、スチレン基、アルキニル基、ハロゲン化物基、エポキシド基、アミン基、カルボン酸基、エステル基、およびアルキル基のうちの1つまたは複数を含む、基板上へとアダマンタンモノマーおよび開始剤を熱蒸発させることと、
前記ポリマー化可能シード層を硬化し、前記基板上にポリアダマンタン層を形成するために、1分から2時間の範囲の期間で100nmから700nmの範囲の波長を有する光源に前記ポリマー化可能シード層を曝すことと、
前記ポリマー化可能シード層の未硬化部分を取り除くことと、
前記ポリアダマンタン層上にナノ結晶性ダイヤモンド層を堆積することと
を含む、方法。 - ポリアダマンタンポリマーでコーティングした基板をプラズマに曝して、前記基板上にナノ結晶性ダイヤモンド層を形成することを含む、ダイヤモンドフィルムを形成する方法。
- 溶液を形成するために第1の溶媒内でアダマンタンモノマーを溶解することであって、前記アダマンタンモノマーは、以下の式(I)、(II)、(III)、および(IV)からなる群から選択された構造を有し、
ここで、R1、R2、R3およびR4は各々独立に、水素、ビニル基、アクリレート基、スチレン基、アルキニル基、ハロゲン化物基、エポキシド基、アミン基、カルボン酸基、エステル基、およびアルキル基のうちの1つまたは複数を含む、第1の溶媒内でアダマンタンモノマーを溶解することと、
混合物を形成するために前記溶液に開始剤を追加することであって、前記開始剤はベンゾフェノン、チオキサントン、ベンゾインエーテル、ベンジルケタール、ジアルコキシアセトフェノン、ヒドロキシアルキルフェノン、アミノアルキルフェノン、アシルホスフィンオキシド、およびそれらの誘導体、のうちの1つまたは複数を含む、前記溶液に開始剤を追加することと、
前記ポリアダマンタンポリマーを提供するために、紫外線に前記混合物を曝すことと、
ポリマー溶液を形成するために第2の溶媒内で前記ポリアダマンタンポリマーを溶解することと、
前記ポリアダマンタンポリマーで前記基板をコーティングするために、前記基板上に前記ポリマー溶液をスピンコーティングすることとをさらに含む、請求項18に記載の方法。
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