JP4909537B2 - 酸化珪素膜の成膜方法 - Google Patents
酸化珪素膜の成膜方法 Download PDFInfo
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- JP4909537B2 JP4909537B2 JP2005198688A JP2005198688A JP4909537B2 JP 4909537 B2 JP4909537 B2 JP 4909537B2 JP 2005198688 A JP2005198688 A JP 2005198688A JP 2005198688 A JP2005198688 A JP 2005198688A JP 4909537 B2 JP4909537 B2 JP 4909537B2
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- Prior art keywords
- gas
- pattern
- reaction chamber
- film
- silicon oxide
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Description
Si(CH3)4+8O2→SiO2+6H2O+4CO2
cosθ*=r・cosθE
12 反応室
14 電極
18 高周波電源装置
20 基板
24 真空ポンプ
26,28,30 ガス導入管
32,38,44 マスフローコントローラ
36,42,48 ピエゾバルブ
Claims (5)
- 被処理物が収容された反応室内に放電用ガスを導入すると共に電力の供給によって該放電用ガスを放電させ、さらに該反応室内に酸化珪素膜の原料となる複数種類の原料ガスを導入することによって該被処理物の表面に該酸化珪素膜を形成する成膜方法において、
上記反応室内への上記放電用ガスの導入が一定の周期で間欠的に行われ、
上記反応室内への上記複数種類の原料ガスの導入が上記放電用ガスの導入期間に合わせて間欠的に行われ、かつ該複数種類の原料ガスが互いに異なるパターンで該反応室内に導入され、さらに該複数種類の原料ガスの該互いに異なるパターンでの該反応室内への導入が繰り返されること、
を特徴とする、酸化珪素膜の成膜方法。 - 上記複数種類の原料ガスの上記反応室内への導入量の比率が該複数種類の原料ガスによる上記酸化珪素膜の組成比率に応じた一定値とされた、請求項1に記載の酸化珪素膜の成膜方法。
- 上記複数種類の原料ガスは酸素ガスとTMSガスとを含む、請求項1または2に記載の酸化珪素膜の成膜方法。
- 上記電力の供給が上記放電用ガスの導入期間に合わせて間欠的に行われる、請求項1ないし3のいずれかに記載の酸化珪素膜の成膜方法。
- 上記電力は高周波電力である、請求項1ないし4のいずれかに記載の酸化珪素膜の成膜方法。
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JP2005198688A JP4909537B2 (ja) | 2005-07-07 | 2005-07-07 | 酸化珪素膜の成膜方法 |
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JP2005198688A JP4909537B2 (ja) | 2005-07-07 | 2005-07-07 | 酸化珪素膜の成膜方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007016277A JP2007016277A (ja) | 2007-01-25 |
JP4909537B2 true JP4909537B2 (ja) | 2012-04-04 |
Family
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JP2005198688A Expired - Fee Related JP4909537B2 (ja) | 2005-07-07 | 2005-07-07 | 酸化珪素膜の成膜方法 |
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JP (1) | JP4909537B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5015534B2 (ja) * | 2006-09-22 | 2012-08-29 | 財団法人高知県産業振興センター | 絶縁膜の成膜方法 |
JP5757515B2 (ja) * | 2010-10-15 | 2015-07-29 | 学校法人立命館 | 撥水層を有する液滴保持ツールの製造方法 |
JP5807084B2 (ja) | 2013-09-30 | 2015-11-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
WO2019203024A1 (ja) * | 2018-04-20 | 2019-10-24 | コニカミノルタ株式会社 | 透明部材及び透明部材の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3186872B2 (ja) * | 1992-11-19 | 2001-07-11 | 神港精機株式会社 | パルスプラズマcvdによる成膜方法 |
JP2004346386A (ja) * | 2003-05-23 | 2004-12-09 | Toppan Printing Co Ltd | 真空成膜装置及び透明ガスバリアフィルム |
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2005
- 2005-07-07 JP JP2005198688A patent/JP4909537B2/ja not_active Expired - Fee Related
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