KR20140068014A - 장치 상에 코팅을 증착하기 위한 개선된 증착 기술 - Google Patents

장치 상에 코팅을 증착하기 위한 개선된 증착 기술 Download PDF

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Publication number
KR20140068014A
KR20140068014A KR1020147003385A KR20147003385A KR20140068014A KR 20140068014 A KR20140068014 A KR 20140068014A KR 1020147003385 A KR1020147003385 A KR 1020147003385A KR 20147003385 A KR20147003385 A KR 20147003385A KR 20140068014 A KR20140068014 A KR 20140068014A
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KR
South Korea
Prior art keywords
vapor
process chamber
precursor material
deposition
coating
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Ceased
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KR1020147003385A
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English (en)
Korean (ko)
Inventor
안쏘니 오하라
Original Assignee
멤스스타 리미티드
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Publication of KR20140068014A publication Critical patent/KR20140068014A/ko
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0005—Anti-stiction coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00952—Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/112—Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Formation Of Insulating Films (AREA)
KR1020147003385A 2011-09-01 2012-08-31 장치 상에 코팅을 증착하기 위한 개선된 증착 기술 Ceased KR20140068014A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1115105.7A GB2494168B (en) 2011-09-01 2011-09-01 Improved deposition technique for micro electro-mechanical structures (MEMS)
GB1115105.7 2011-09-01
PCT/GB2012/052127 WO2013030576A1 (en) 2011-09-01 2012-08-31 Improved deposition technique for depositing a coating on a device

Publications (1)

Publication Number Publication Date
KR20140068014A true KR20140068014A (ko) 2014-06-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147003385A Ceased KR20140068014A (ko) 2011-09-01 2012-08-31 장치 상에 코팅을 증착하기 위한 개선된 증착 기술

Country Status (7)

Country Link
US (1) US20140308822A1 (enExample)
EP (1) EP2751301A1 (enExample)
JP (1) JP6265496B2 (enExample)
KR (1) KR20140068014A (enExample)
CN (1) CN103717783B (enExample)
GB (1) GB2494168B (enExample)
WO (1) WO2013030576A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170066206A (ko) * 2015-11-16 2017-06-14 어플라이드 머티어리얼스, 인코포레이티드 저 증기압 에어로졸-보조 cvd
CN109417042A (zh) * 2016-04-25 2019-03-01 应用材料公司 用于自组装单层工艺的化学输送腔室
KR20190083973A (ko) * 2018-01-05 2019-07-15 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 컴퓨터 기억 매체
CN110241403A (zh) * 2019-07-23 2019-09-17 芜湖通潮精密机械股份有限公司 一种减小温差的加热器及其制作方法和应用
CN110395689A (zh) * 2019-06-24 2019-11-01 金华职业技术学院 一种微颗粒的组装方法
KR20200083642A (ko) * 2017-11-29 2020-07-08 도쿄엘렉트론가부시키가이샤 기판의 후면 마찰 감소
KR20200119153A (ko) * 2019-04-09 2020-10-19 한국과학기술연구원 의료 기기용 렌즈 및 이의 제조방법
KR20210028632A (ko) * 2015-11-16 2021-03-12 어플라이드 머티어리얼스, 인코포레이티드 저 증기압 에어로졸-보조 cvd

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US10358715B2 (en) * 2016-06-03 2019-07-23 Applied Materials, Inc. Integrated cluster tool for selective area deposition
US10504715B2 (en) 2016-07-21 2019-12-10 Tokyo Electron Limited Back-side friction reduction of a substrate
US10784100B2 (en) 2016-07-21 2020-09-22 Tokyo Electron Limited Back-side friction reduction of a substrate
US10833076B2 (en) 2016-09-30 2020-11-10 Intel Corporation Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse
US10727044B2 (en) 2017-09-21 2020-07-28 Honeywell International Inc. Fill material to mitigate pattern collapse
US10748757B2 (en) 2017-09-21 2020-08-18 Honeywell International, Inc. Thermally removable fill materials for anti-stiction applications
JP2022151518A (ja) * 2021-03-23 2022-10-07 株式会社魁半導体 積層体製造装置及び自己組織化単分子膜の形成方法
US20250011933A1 (en) * 2021-03-23 2025-01-09 Toray Engineering Co., Ltd. Laminate manufacturing apparatus and self-assembled monolayer formation method
US20230212747A1 (en) * 2021-12-31 2023-07-06 Applied Materials, Inc. Apparatus and Methods for Self-Assembled Monolayer (SAM) Deposition in Semiconductor Equipment

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JPH05121568A (ja) * 1991-05-21 1993-05-18 Fujitsu Ltd 半導体装置の製造方法
TW371796B (en) * 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JP3488324B2 (ja) * 1995-09-08 2004-01-19 株式会社半導体エネルギー研究所 半導体装置の製造方法および半導体装置の製造装置
JPH11293461A (ja) * 1998-04-16 1999-10-26 Matsushita Electric Ind Co Ltd 酸化物の気相蒸着法および蒸着薄膜
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JP4021653B2 (ja) * 2001-11-30 2007-12-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｃｖｄ法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170066206A (ko) * 2015-11-16 2017-06-14 어플라이드 머티어리얼스, 인코포레이티드 저 증기압 에어로졸-보조 cvd
KR20210028632A (ko) * 2015-11-16 2021-03-12 어플라이드 머티어리얼스, 인코포레이티드 저 증기압 에어로졸-보조 cvd
KR20200108512A (ko) * 2016-04-25 2020-09-18 어플라이드 머티어리얼스, 인코포레이티드 자기-조립 단분자층 프로세스들을 위한 화학물질 전달 챔버
KR20210003966A (ko) * 2016-04-25 2021-01-12 어플라이드 머티어리얼스, 인코포레이티드 자기-조립 단분자층 프로세스들을 위한 화학물질 전달 챔버
CN109417042A (zh) * 2016-04-25 2019-03-01 应用材料公司 用于自组装单层工艺的化学输送腔室
US11066747B2 (en) 2016-04-25 2021-07-20 Applied Materials, Inc. Chemical delivery chamber for self-assembled monolayer processes
CN109417042B (zh) * 2016-04-25 2022-05-10 应用材料公司 用于自组装单层工艺的化学输送腔室
KR20200083642A (ko) * 2017-11-29 2020-07-08 도쿄엘렉트론가부시키가이샤 기판의 후면 마찰 감소
KR20190083973A (ko) * 2018-01-05 2019-07-15 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 컴퓨터 기억 매체
KR20200119153A (ko) * 2019-04-09 2020-10-19 한국과학기술연구원 의료 기기용 렌즈 및 이의 제조방법
CN110395689A (zh) * 2019-06-24 2019-11-01 金华职业技术学院 一种微颗粒的组装方法
CN110395689B (zh) * 2019-06-24 2024-03-22 金华职业技术学院 一种微颗粒的组装方法
CN110241403A (zh) * 2019-07-23 2019-09-17 芜湖通潮精密机械股份有限公司 一种减小温差的加热器及其制作方法和应用

Also Published As

Publication number Publication date
GB2494168A (en) 2013-03-06
GB201115105D0 (en) 2011-10-19
JP6265496B2 (ja) 2018-01-24
JP2014531508A (ja) 2014-11-27
US20140308822A1 (en) 2014-10-16
CN103717783B (zh) 2016-11-16
EP2751301A1 (en) 2014-07-09
CN103717783A (zh) 2014-04-09
WO2013030576A1 (en) 2013-03-07
GB2494168B (en) 2014-04-09

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Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20141017