JP6263108B2 - 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 - Google Patents

半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 Download PDF

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JP6263108B2
JP6263108B2 JP2014184783A JP2014184783A JP6263108B2 JP 6263108 B2 JP6263108 B2 JP 6263108B2 JP 2014184783 A JP2014184783 A JP 2014184783A JP 2014184783 A JP2014184783 A JP 2014184783A JP 6263108 B2 JP6263108 B2 JP 6263108B2
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electrode
chip
mosfet
mosfet chip
control circuit
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JP2014184783A
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Japanese (ja)
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JP2016058594A5 (https=
JP2016058594A (ja
Inventor
哲也 石丸
哲也 石丸
森　睦宏
森　　睦宏
栗田　信一
信一 栗田
茂 菅山
茂 菅山
順一 坂野
順一 坂野
航平 恩田
航平 恩田
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Hitachi Ltd
Minebea Power Semiconductor Device Inc
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Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
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Priority to JP2014184783A priority Critical patent/JP6263108B2/ja
Application filed by Hitachi Ltd, Hitachi Power Semiconductor Device Ltd filed Critical Hitachi Ltd
Priority to US15/509,882 priority patent/US9831145B2/en
Priority to PCT/JP2015/073182 priority patent/WO2016039094A1/ja
Priority to DE112015003757.8T priority patent/DE112015003757B4/de
Priority to CN201580047798.8A priority patent/CN106605299A/zh
Priority to TW104129982A priority patent/TWI582942B/zh
Publication of JP2016058594A publication Critical patent/JP2016058594A/ja
Publication of JP2016058594A5 publication Critical patent/JP2016058594A5/ja
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    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
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    • H10W40/77—Auxiliary members characterised by their shape
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
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    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
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    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
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    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/874—On different surfaces
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
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    • H10W74/00—Encapsulations, e.g. protective coatings
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/00—Package configurations
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
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    • H10W90/00—Package configurations
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/00—Package configurations
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Rectifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2014184783A 2014-09-11 2014-09-11 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 Active JP6263108B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014184783A JP6263108B2 (ja) 2014-09-11 2014-09-11 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置
PCT/JP2015/073182 WO2016039094A1 (ja) 2014-09-11 2015-08-19 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置
DE112015003757.8T DE112015003757B4 (de) 2014-09-11 2015-08-19 Halbleitervorrichtung sowie Generator und Stromrichtvorrichtung, welche die Halbleitervorrichtung verwenden
CN201580047798.8A CN106605299A (zh) 2014-09-11 2015-08-19 半导体装置以及使用该半导体装置的交流发电机和电力转换装置
US15/509,882 US9831145B2 (en) 2014-09-11 2015-08-19 Semiconductor device, and alternator and power converter using the semiconductor device
TW104129982A TWI582942B (zh) 2014-09-11 2015-09-10 A semiconductor device, and a generator and a power conversion device using the same

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JP2014184783A JP6263108B2 (ja) 2014-09-11 2014-09-11 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置

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JP2016058594A JP2016058594A (ja) 2016-04-21
JP2016058594A5 JP2016058594A5 (https=) 2017-04-13
JP6263108B2 true JP6263108B2 (ja) 2018-01-17

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US (1) US9831145B2 (https=)
JP (1) JP6263108B2 (https=)
CN (1) CN106605299A (https=)
DE (1) DE112015003757B4 (https=)
TW (1) TWI582942B (https=)
WO (1) WO2016039094A1 (https=)

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JP6869140B2 (ja) * 2017-08-07 2021-05-12 株式会社 日立パワーデバイス 半導体装置及びそれを用いたオルタネータ
JP2019122211A (ja) * 2018-01-11 2019-07-22 株式会社デンソー 回転電機
JP6988518B2 (ja) * 2018-01-26 2022-01-05 株式会社デンソー 整流装置及び回転電機
JP6996385B2 (ja) * 2018-03-28 2022-01-17 住友電気工業株式会社 増幅器
TWI710138B (zh) * 2018-06-21 2020-11-11 朋程科技股份有限公司 用於整流器的功率元件
CN108807305B (zh) * 2018-07-02 2024-02-13 山东晶导微电子股份有限公司 一种带输出保护的电源功率模块结构
JP7231407B2 (ja) * 2018-12-27 2023-03-01 株式会社 日立パワーデバイス 半導体装置およびそれを用いたオルタネータ
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JP7232743B2 (ja) * 2019-10-24 2023-03-03 株式会社 日立パワーデバイス 半導体装置及びそれを用いた整流素子、オルタネータ
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JP7580352B2 (ja) * 2021-09-01 2024-11-11 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
JP2024175486A (ja) * 2023-06-06 2024-12-18 ミネベアパワーデバイス株式会社 半導体装置及びそれを用いた電力変換装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019106635B4 (de) 2018-03-16 2022-01-27 Denso Corporation Leistungshalbleitervorrichtung, rotierende elektrische Maschine, die diese umfasst, und Verfahren zum Herstellen einer Leistungshalbleitervorrichtung

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Publication number Publication date
US9831145B2 (en) 2017-11-28
CN106605299A (zh) 2017-04-26
DE112015003757T5 (de) 2017-06-29
US20170263516A1 (en) 2017-09-14
WO2016039094A1 (ja) 2016-03-17
JP2016058594A (ja) 2016-04-21
TW201622099A (zh) 2016-06-16
TWI582942B (zh) 2017-05-11
DE112015003757B4 (de) 2024-07-04

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