JP6261352B2 - カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法 - Google Patents

カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法 Download PDF

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JP6261352B2
JP6261352B2 JP2014010306A JP2014010306A JP6261352B2 JP 6261352 B2 JP6261352 B2 JP 6261352B2 JP 2014010306 A JP2014010306 A JP 2014010306A JP 2014010306 A JP2014010306 A JP 2014010306A JP 6261352 B2 JP6261352 B2 JP 6261352B2
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carbon nanotube
resin portion
thermoplastic resin
thermosetting resin
sheet
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JP2015138903A5 (https=
JP2015138903A (ja
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織田　卓哉
卓哉 織田
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2014010306A priority Critical patent/JP6261352B2/ja
Priority to US14/533,556 priority patent/US9873825B2/en
Priority to CN201410643282.7A priority patent/CN104810335B/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/251—Organics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777—Edge feature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2014010306A 2014-01-23 2014-01-23 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法 Active JP6261352B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014010306A JP6261352B2 (ja) 2014-01-23 2014-01-23 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法
US14/533,556 US9873825B2 (en) 2014-01-23 2014-11-05 Carbon nanotube sheet, semiconductor device, method of manufacturing carbon nanotube sheet, and method of manufacturing semiconductor device
CN201410643282.7A CN104810335B (zh) 2014-01-23 2014-11-06 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014010306A JP6261352B2 (ja) 2014-01-23 2014-01-23 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法

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JP2015138903A JP2015138903A (ja) 2015-07-30
JP2015138903A5 JP2015138903A5 (https=) 2016-10-27
JP6261352B2 true JP6261352B2 (ja) 2018-01-17

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US (1) US9873825B2 (https=)
JP (1) JP6261352B2 (https=)
CN (1) CN104810335B (https=)

Families Citing this family (8)

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KR20190021230A (ko) * 2016-06-28 2019-03-05 니폰 제온 가부시키가이샤 방열 장치
KR102546241B1 (ko) 2016-10-05 2023-06-22 삼성전자주식회사 반도체 패키지
US11004680B2 (en) * 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
WO2018156878A1 (en) * 2017-02-24 2018-08-30 Lintec Of America, Inc. Nanofiber thermal interface material
JP7338738B2 (ja) * 2018-08-23 2023-09-05 株式会社レゾナック 半導体デバイスの製造方法、熱伝導シート、及び熱伝導シートの製造方法
US11482466B2 (en) 2018-08-23 2022-10-25 Showa Denko Materials Co., Ltd. Method of manufacturing semiconductor device, thermally conductive sheet, and method of manufacturing thermally conductive sheet
US11915991B2 (en) * 2021-03-26 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having first heat spreader and second heat spreader and manufacturing method thereof

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CN100383213C (zh) * 2004-04-02 2008-04-23 清华大学 一种热界面材料及其制造方法
US7135769B2 (en) * 2005-03-29 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of manufacturing thereof
CN101054467B (zh) * 2006-04-14 2010-05-26 清华大学 碳纳米管复合材料及其制备方法
US7489033B2 (en) * 2006-11-10 2009-02-10 Intel Corporation Electronic assembly with hot spot cooling
ATE474876T1 (de) * 2007-02-22 2010-08-15 Dow Corning Verfahren zur herstellung leitfähiger folien sowie in diesem verfahren hergestellte artikel
JP5104688B2 (ja) * 2007-10-22 2012-12-19 富士通株式会社 シート状構造体及びその製造方法並びに電子機器
JP5276565B2 (ja) * 2009-10-14 2013-08-28 新光電気工業株式会社 放熱用部品
JP5295932B2 (ja) 2009-11-02 2013-09-18 新光電気工業株式会社 半導体パッケージ及びその評価方法、並びにその製造方法
JP5842349B2 (ja) * 2011-03-18 2016-01-13 富士通株式会社 シート状構造体、シート状構造体の製造方法、電子機器及び電子機器の製造方法
JP5673325B2 (ja) 2011-04-20 2015-02-18 富士通株式会社 カーボンナノチューブの形成方法及び熱拡散装置
JP6015009B2 (ja) * 2012-01-25 2016-10-26 富士通株式会社 電子装置及びその製造方法
KR101332866B1 (ko) * 2012-02-16 2013-11-22 앰코 테크놀로지 코리아 주식회사 반도체 장치
JP5928181B2 (ja) * 2012-06-18 2016-06-01 富士通株式会社 電子機器の製造方法及び電子機器
US9041192B2 (en) * 2012-08-29 2015-05-26 Broadcom Corporation Hybrid thermal interface material for IC packages with integrated heat spreader

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CN104810335B (zh) 2018-11-13
JP2015138903A (ja) 2015-07-30
US9873825B2 (en) 2018-01-23
US20150206822A1 (en) 2015-07-23
CN104810335A (zh) 2015-07-29

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