JP6259857B2 - ウェーハ回転装置 - Google Patents
ウェーハ回転装置 Download PDFInfo
- Publication number
- JP6259857B2 JP6259857B2 JP2016086440A JP2016086440A JP6259857B2 JP 6259857 B2 JP6259857 B2 JP 6259857B2 JP 2016086440 A JP2016086440 A JP 2016086440A JP 2016086440 A JP2016086440 A JP 2016086440A JP 6259857 B2 JP6259857 B2 JP 6259857B2
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- JP
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- Prior art keywords
- wafer
- shaft gear
- base
- roller
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000004308 accommodation Effects 0.000 claims description 10
- 239000011247 coating layer Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 139
- 238000004140 cleaning Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 238000007772 electroless plating Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229920006260 polyaryletherketone Polymers 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005844 autocatalytic reaction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
- C23C18/163—Supporting devices for articles to be coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
110 ベース
110a 収容空間
110b 側面
110c もう一つの側面
112 固定部
112a 制限壁
112b 制限スロット
112c 上面
114 手持ち部
114a 第一の片持ち梁
114b 第二の片持ち梁
120 キャリア装置
120a スロット
122 ウェーハ
130 第一のシャフトギア
140 電源ユニット
142 モーター
144 電源装置
150 ローラー
150a 回転中心
152 被覆層
160 第二のシャフトギア
170 駆動アセンブリ
172 第一のギア
174 第二のギア
176 第三のギア
180 制限ピラー
200 ウェーハ回転装置
210 ベース
210a 収容空間
210b 側面
210c もう一つの側面
212 固定部
212a 制限壁
212b 制限スロット
212c 制限スロット
212d 上面
212e 床部
212f 貫通孔
214 手持ち部
214a 第一のフレーム
214b 第二のフレーム
220 キャリア装置
222 ウェーハ
224 ウェーハ
270 駆動装置
272 第一のギア
274 第二のギア
Claims (13)
- ウェーハ処理装置に適用されるウェーハ回転装置であって、
収容空間を有するベースと、
前記収容空間に配置され、ウェーハを収容するのに用いられるキャリア装置と、
前記ベースの側面に配置された第一のシャフトギアと、
前記ベースの上部に組み立てられ、前記第一のシャフトギアと接続された電源ユニットと、
前記キャリア装置の下方に位置し、前記ウェーハの端部を支持するローラーと、
前記側面に配置され、前記ローラーに接続された第二のシャフトギアと、
前記第一のシャフトギアと前記第二のシャフトギアとの間に接続された駆動アセンブリであって、前記第一のシャフトギアおよび前記駆動アセンブリを回転可能にする電力が前記電源ユニットから供給されたときに、前記第二のシャフトギアが回転して前記ローラーを回転駆動させ、それによって前記ウェーハを回転させる、駆動アセンブリと、を備え、
前記ベースはさらに固定部を有しており、前記固定部は前記収容空間に配置され、複数の制限壁と各2つの隣接する制限壁間にある制限スロットとを備え、前記制限スロットは、前記制限壁の上面から凹設されて複数の床部を形成し、前記各床部は、前記収容空間および前記制限スロットと連結する複数の貫通孔を有し、前記キャリア装置の底部の両側は、前記制限スロットに配置されて前記床部と接触することで前記キャリア装置の移動を制限する、ことを特徴とするウェーハ回転装置。 - 前記ローラーは、前記ローラーと前記ウェーハの端部との間の摩擦を増加させるために、前記ローラーの周りを被覆している被覆層を有する、請求項1に記載のウェーハ回転装置。
- 前記被覆層の材料はゴムである、請求項2に記載のウェーハ回転装置。
- 前記被覆層の材料はマープレンである、請求項2に記載のウェーハ回転装置。
- 前記制限スロットは前記収容空間と連結される、請求項1に記載のウェーハ回転装置。
- 前記各制限壁の上面の高さは前記ローラーの回転中心の高さよりも低い、請求項5に記載のウェーハ回転装置。
- 前記駆動アセンブリはギアチェーンセットであり、前記ギアチェーンセットは複数のギアを備え、前記ギアは、前記第一のシャフトギアと前記第二のシャフトギアとの間に噛合している、請求項1に記載のウェーハ回転装置。
- 前記駆動アセンブリはベルトであり、前記ベルトは前記第一のシャフトギアおよび前記第二のシャフトギアの周りを囲む、請求項1に記載のウェーハの回転装置。
- 前記ベースは、さらに手持ち部を有しており、前記ベースは、前記手持ち部によって前記ウェーハ処理装置に可動式に配置される、請求項1に記載のウェーハ回転装置。
- 前記手持ち部は少なくとも1対の片持ち梁を有しており、前記片持ち梁は、それぞれ前記ベースの外側に向けて突出する、請求項9に記載のウェーハ回転装置。
- 前記手持ち部は、2つの第一のフレームと第二のフレームとを有しており、前記2つの第一のフレームは、それぞれ前記ベースの前記側面ともう一つの側面とに配置され、前記第二のフレームは、前記2つの第一のフレーム間で垂直に連結されている、請求項9に記載のウェーハ回転装置。
- 前記電源ユニットは、
前記第一のシャフトギアに接続されたモーターと、
前記モーターと電気的に接続され、前記モーターを駆動して前記第一のシャフトギアを回転駆動させる電源装置と、を備える、請求項1に記載のウェーハ回転装置。 - 前記ベースのもう一つの側面に配置され、前記もう一つの側面から前記収容空間に突出し、前記キャリア装置がぐらつくのを制限するために、前記キャリア装置の上部より上方に位置した制限ピラーをさらに備える、請求項1に記載のウェーハ回転装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104113930A TWI569351B (zh) | 2015-04-30 | 2015-04-30 | 晶圓旋轉裝置 |
TW104113930 | 2015-04-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016213450A JP2016213450A (ja) | 2016-12-15 |
JP6259857B2 true JP6259857B2 (ja) | 2018-01-10 |
Family
ID=57205070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016086440A Active JP6259857B2 (ja) | 2015-04-30 | 2016-04-22 | ウェーハ回転装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9611548B2 (ja) |
JP (1) | JP6259857B2 (ja) |
CN (1) | CN106098590B (ja) |
TW (1) | TWI569351B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI713140B (zh) * | 2019-08-29 | 2020-12-11 | 環球晶圓股份有限公司 | 晶棒固定治具 |
CN113035751B (zh) * | 2021-03-02 | 2022-08-19 | 桂林雷光科技有限公司 | 一种去应力腐蚀机的芯片旋转装置及其设备 |
CN113571455B (zh) * | 2021-09-27 | 2022-02-01 | 智程半导体设备科技(昆山)有限公司 | 半导体器件收容装置的承托组件 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3798056A (en) * | 1972-04-05 | 1974-03-19 | Bell Telephone Labor Inc | Electroless plating process |
US4662811A (en) * | 1983-07-25 | 1987-05-05 | Hayden Thomas J | Method and apparatus for orienting semiconductor wafers |
US4813840A (en) * | 1987-08-11 | 1989-03-21 | Applied Materials, Inc. | Method of aligning wafers and device therefor |
US5149158A (en) * | 1989-11-20 | 1992-09-22 | Submicron Systems, Inc. | Wafer carrier holder for wafer carriers |
US5352249A (en) * | 1992-08-28 | 1994-10-04 | Hughes Aircraft Company | Apparatus for providing consistent, non-jamming registration of semiconductor wafers |
TW275708B (ja) * | 1993-12-28 | 1996-05-11 | Tokyo Electron Co Ltd | |
US5520205A (en) * | 1994-07-01 | 1996-05-28 | Texas Instruments Incorporated | Apparatus for wafer cleaning with rotation |
US5507614A (en) * | 1995-03-02 | 1996-04-16 | Cybeq Systems | Holder mechanism for simultaneously tilting and rotating a wafer cassette |
US6532976B1 (en) * | 1995-07-10 | 2003-03-18 | Lg Semicon Co., Ltd. | Semiconductor wafer cleaning apparatus |
JP3428606B2 (ja) * | 1995-08-29 | 2003-07-22 | 三菱住友シリコン株式会社 | 半導体ウェーハのエッチング装置 |
US5551829A (en) * | 1995-10-11 | 1996-09-03 | H-Square Corporation | Notch finder having a flexible alignment rod |
JPH1022244A (ja) * | 1996-06-29 | 1998-01-23 | Komatsu Electron Metals Co Ltd | 半導体ウェハの洗浄用バスケット |
US5759007A (en) * | 1996-11-01 | 1998-06-02 | Micron Technology, Inc. | Notch finder and combination wafer transfer machine |
US5816274A (en) * | 1997-04-10 | 1998-10-06 | Memc Electronic Materials, Inc. | Apparartus for cleaning semiconductor wafers |
US6273107B1 (en) * | 1997-12-05 | 2001-08-14 | Texas Instruments Incorporated | Positive flow, positive displacement rinse tank |
US6616774B2 (en) * | 1997-12-26 | 2003-09-09 | Spc Electronics | Wafer cleaning device and tray for use in wafer cleaning device |
JPH11307509A (ja) * | 1998-04-16 | 1999-11-05 | Sumitomo Precision Prod Co Ltd | ウエーハ処理装置 |
KR100296668B1 (ko) * | 1998-06-01 | 2001-10-26 | 윤종용 | 웨이퍼검사장비및이를이용한웨이퍼검사방법 |
JP3297417B2 (ja) * | 2000-03-29 | 2002-07-02 | 株式会社半導体先端テクノロジーズ | ウェット洗浄装置およびウェットエッチング方法 |
US6911097B1 (en) * | 2000-07-31 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company | Photoresist stripper using nitrogen bubbler |
JP2002093774A (ja) * | 2000-09-13 | 2002-03-29 | Seiko Epson Corp | ウェット処理装置 |
US6678911B2 (en) * | 2000-12-11 | 2004-01-20 | Speedfam-Ipec Corporation | Multiple vertical wafer cleaner |
US6595224B2 (en) * | 2001-06-20 | 2003-07-22 | P.C.T. Systems, Inc. | Bath system with sonic transducers on vertical and angled walls |
CH713466B1 (de) * | 2001-07-12 | 2018-08-15 | Murata Machinery Ltd | Vorrichtung und Verfahren zum harmonisierten Positionieren von Waferscheiben. |
KR20030048682A (ko) * | 2001-12-12 | 2003-06-25 | 삼성전자주식회사 | 반도체 웨이퍼 가이드 및 이를 구비한 반도체 습식세정장치 |
JP2003251290A (ja) * | 2002-03-05 | 2003-09-09 | Dainippon Screen Mfg Co Ltd | 洗浄装置及びこれを備えた基板処理装置 |
TW561542B (en) * | 2002-10-18 | 2003-11-11 | Chipmos Technologies Bermuda | Process and apparatus for grinding a wafer backside |
JP2004247480A (ja) * | 2003-02-13 | 2004-09-02 | Tamagawa Machinery Co Ltd | ウェーハ回転装置 |
US20040226506A1 (en) * | 2003-05-14 | 2004-11-18 | Lynn David Mark | Coated wafer processing equipment |
CN2632848Y (zh) | 2003-05-27 | 2004-08-11 | 矽统科技股份有限公司 | 晶圆清洗装置 |
JP4390650B2 (ja) * | 2004-07-15 | 2009-12-24 | Sumco Techxiv株式会社 | 半導体ウェーハのエッチング装置 |
JP4672464B2 (ja) * | 2005-06-30 | 2011-04-20 | 東京エレクトロン株式会社 | 洗浄装置および洗浄方法、ならびにコンピュータにより読取可能な記憶媒体 |
DE102006052908B4 (de) * | 2006-11-08 | 2008-12-04 | Deutsche Solar Ag | Wafer-Auffang-Vorrichtung |
US20090159100A1 (en) * | 2007-12-24 | 2009-06-25 | Texas Instruments Incorporated | Two-piece magnetically coupled substrate roller used in megasonic cleaning process |
JP4999808B2 (ja) * | 2008-09-29 | 2012-08-15 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2010118535A (ja) * | 2008-11-13 | 2010-05-27 | Muratec Automation Co Ltd | 運搬装置 |
EP2359390A1 (en) * | 2008-11-19 | 2011-08-24 | MEMC Electronic Materials, Inc. | Method and system for stripping the edge of a semiconductor wafer |
TWM505691U (zh) * | 2015-04-30 | 2015-07-21 | Globalwafers Co Ltd | 晶圓旋轉裝置 |
-
2015
- 2015-04-30 TW TW104113930A patent/TWI569351B/zh active
-
2016
- 2016-02-04 CN CN201610080193.5A patent/CN106098590B/zh active Active
- 2016-03-22 US US15/076,684 patent/US9611548B2/en active Active
- 2016-04-22 JP JP2016086440A patent/JP6259857B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US9611548B2 (en) | 2017-04-04 |
CN106098590A (zh) | 2016-11-09 |
TW201639060A (zh) | 2016-11-01 |
CN106098590B (zh) | 2018-11-30 |
JP2016213450A (ja) | 2016-12-15 |
US20160322244A1 (en) | 2016-11-03 |
TWI569351B (zh) | 2017-02-01 |
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