TW561542B - Process and apparatus for grinding a wafer backside - Google Patents

Process and apparatus for grinding a wafer backside Download PDF

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Publication number
TW561542B
TW561542B TW91124412A TW91124412A TW561542B TW 561542 B TW561542 B TW 561542B TW 91124412 A TW91124412 A TW 91124412A TW 91124412 A TW91124412 A TW 91124412A TW 561542 B TW561542 B TW 561542B
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Taiwan
Prior art keywords
wafer
grinding
positioning
tape
patent application
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TW91124412A
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Chinese (zh)
Inventor
Chung-Hao Lee
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Chipmos Technologies Bermuda
Chipmos Technologies Inc
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Priority to TW91124412A priority Critical patent/TW561542B/en
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Publication of TW561542B publication Critical patent/TW561542B/en

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Abstract

A process and an apparatus for grinding a wafer backside are disclosed. According the process, a wafer is kept to suck onto a grinding chuck after grinding the wafer backside, then a positioner for dicing wafer is attached on the wafer backside. The wafer is unloaded and transported by mean of the positioner for the follow-up step of de-taping or wafer-dicing. Therefore, process is integrated and wafer crack caused by wafer warpage during unloading or transporting after grinding is avoided.

Description

561542561542

【發明領域】 種整 備 【先前技術】 隨著半導體封裝結構之薄化趨勢,封裝結構内之晶片 亦需要符合更薄之厚度,故一種晶圓背面研磨製程被提 出’習知晶圓背面研磨製程係實施於積體電路製作製程之 後而且在曰曰圓切割製程之前’使得晶圓上多個晶片能一次 完成薄化處理。 傳」统晶圓背面研磨製程與晶圓切割製程之流程係如第 圖曰所示,如第!及2圖所示,在「提供晶圓」U之步驟中 係^供有晶圓20 ’晶圓20具有一形成有積體電路之主動 面21與一對應之背面22,通常在晶圓2〇之主動面21貼附有 一保護膠帶23,之後,在「裝載晶圓」12之步驟中,以主 動面21朝 吸附固定 晶圓20裝 背面22係 3 2研磨該 後,進行 出〕接觸 並搬移至 膠帶」15 向研磨 於研磨 載於一 為顯露 背面22 「卸下 曰曰 圓20 一膠帶 步驟〕 盤31 〔grinding chuck〕之方式將晶圓2〇 盤31,習知係為真空吸附方法,用以將該 傳統晶圓背面研磨設備,此時,晶圓2 〇之 ’在「研磨晶圓」1 3之步驟中,以研磨頭 ’以形成一更薄之研磨後背面2 2 1,之 晶圓」1 4步驟,以一吸附裝置〔圖未緣 之背面221,將晶圓20由研磨設備取出, 去除栽台,以去除保護膠帶23〔即「去除 ’在晶圓2 0之背面2 21黏貼另一定位膠帶[Field of the invention] Kind of preparation [Previous technology] With the trend of thinning the semiconductor package structure, the wafers in the package structure also need to conform to a thinner thickness, so a wafer backside polishing process is proposed. After the integrated circuit manufacturing process and before the circular cutting process, multiple wafers on the wafer can be thinned at one time. The flow of the wafer back grinding process and wafer dicing process is shown in the figure, as shown in the figure! As shown in FIG. 2, in the step of “providing the wafer” U, the wafer 20 is supplied. The wafer 20 has an active surface 21 on which an integrated circuit is formed and a corresponding back surface 22, usually on the wafer 2. The active surface 21 of 〇 is attached with a protective tape 23, and then, in the step of "loading the wafer" 12, the active surface 21 is polished toward the adsorption and fixing wafer 20, and the back surface 22 is mounted on the system 22, and then polished out. "Move to tape" 15-direction grinding and grinding are carried on one to reveal the back surface 22 "Unloading the circle 20" tape step] wafer 31 [grinding chuck] way, the wafer 20 disk 31, the conventional system is the vacuum adsorption method For the conventional wafer back grinding equipment, at this time, the wafer 2 0 'in the step of "grinding the wafer" 13 with a grinding head' to form a thinner polished back 2 1 1, "Wafer" 1 4 steps, with a suction device (the back side 221 in the figure), remove the wafer 20 from the grinding equipment, remove the mounting platform to remove the protective tape 23 [that is, "remove" on the back side of the wafer 20 2 21 Stick another positioning tape

561542 五、發明說明(2) 〔即「切割前晶圓定位」1 6步驟〕,之後將晶圓20搬移至 一晶圓切割設備,進行「切割晶圓」17之步驟,故在「卸 下晶圓」1 4至「切割晶圓」1 7之步驟之間係需要多道搬運 動作’進行機台之轉換,由於習知之小尺寸晶圓〔4或6 才〕者面研磨’研磨後晶圓之翹曲度〔wafer warpage〕 仍不明顯,尤在可被接受之範圍,但隨著晶圓尺寸之加大 〔6时以上〕或研磨厚度之更嚴格要求〔1 2密爾以下〕, 如第2圖所示,研磨後晶圓2 〇之翹曲相當明顯,此一翹曲 之發生更因晶圓積體電路製程殘留應力以及如矽等半導體 基層之薄化變得額外嚴重,在「卸下晶圓」14或後續之搬 運步驟均極易導致晶圓20之碎裂。 。 在中華民國專利公告第420845號「晶圓切割研磨製 程」專利案中,所揭示之晶圓切割研磨製程係在研磨之前 預先切割晶圓,晶圓之背面係黏貼於第一貼帶,切割後晶 圓之主動面黏貼第二貼帶,再去除第一貼帶,進行研磨後 晶圓即形成多個晶片,再將多個晶片之磨薄後背面黏貼第 一貼帶,去除第二貼帶,因此,翻轉與搬移之次數相當頻 ,:晶圓之定位校正需要嚴格要求,此外,t需要過度研 磨時,在第二貼帶已分離之晶片可能因黏附力不 時產生位移偏差或碰撞損毁。 1 $ 【發明目的及概要】 本發明之主要目的係在於提供一種晶圓背面研磨製 程,其係、在一研磨盤上吸附晶圓i進行研磨及定位件貼 附,在卸下晶圓後,該定位件係可供晶圓切割,以達到製561542 V. Description of the invention (2) [ie 6 steps of “wafer positioning before dicing”], after that, the wafer 20 is moved to a wafer dicing equipment, and the step of “cutting the wafer” 17 is performed. The steps from “Wafer” 14 to “Slicing Wafer” 17 require multiple handling operations to change the machine. Because the conventional small-size wafers [4 or 6] are polished, the crystals are polished. Wafer warpage [wafer warpage] is still not obvious, especially in the acceptable range, but with the increase of wafer size [more than 6 o'clock] or more stringent requirements for grinding thickness [less than 12 mil], As shown in Figure 2, the warpage of the wafer 20 after grinding is quite obvious. The occurrence of this warpage is even more serious due to the residual stress of the wafer integrated circuit manufacturing process and the thinning of semiconductor substrates such as silicon. "Unloading the wafer" 14 or subsequent handling steps can easily cause the wafer 20 to crack. . In the patent case No. 420845 "wafer dicing and polishing process" of the Republic of China, the wafer dicing and polishing process disclosed is to cut the wafer before grinding, and the back side of the wafer is adhered to the first tape. The active surface of the wafer is pasted with the second tape, and then the first tape is removed. After grinding, the wafer is formed into multiple wafers. After the wafers are thinned, the first tape is adhered to the back and the second tape is removed. Therefore, the number of inversions and transfers is quite frequent. The wafer alignment needs strict requirements. In addition, when t is required to be excessively polished, the wafer that has been separated from the second tape may have displacement deviation or collision damage from time to time due to adhesion. . 1 $ [Objective and Summary of the Invention] The main object of the present invention is to provide a wafer backside polishing process, which is to adsorb the wafer i on a polishing disc for polishing and attaching positioning parts. After the wafer is unloaded, The positioning system can be used for wafer cutting to achieve the manufacturing process.

第6頁 561542 五、發明說明(3) 程整合、減少 裂。 本發明之 程’其係在研 時研磨盤係保 位件係可作為 因翹曲在卸下 本發明之 程,利用在晶 定位件係包含 一大於該晶圓 並經由該開口 後晶圓翹曲之 磨後晶圓在卸 實施晶圓切割 本發明之 搬運動作以及防止研磨後晶圓翹曲產生碎 次一目的係 磨後於同一 持對晶圓之 晶圓卸下與 與搬運過程 在於提 研磨盤 吸附, 搬運之 產生碎 再一目的係在於提 圓背面研磨設備内 有一定位環 尺寸之開口 貼附該晶圓 應力且以該 下或搬運過 〇 另一目的係 及一定 ,該定 之背面 定位環 程之碎 供一種晶圓 上進行定位 以平整貼附 載具,以避 裂、損傷。 供一種晶圓 執行定位件 位膠帶,該 位膠帶係貼 ’以該定位 搬運該晶圓 裂,且能以 備,利用一研磨盤活動於 間,且在研磨後提供有一 整合、減少搬運動作之功 生碎裂、損傷。 本發明之另一目的係 備,其係設置一定位件貼 以貼附晶圓之定位件係包 定位環係具有一大於該晶 在於提供一種晶圓 裝載、研磨及卸下 定位件貼附工作站 效,進而防止研磨 背面研磨製 件貼附,貼附 定位件,該定 免磨薄後晶圓 背面研磨製 貼附步驟,該 定位環係具有 附於該定位環 膠帶吸收研磨 ,有效避免研 該定位件直接 背面研磨設 等工作站之 ,以達到製程 後晶圓翹曲產 在於提供一種晶圓 附工作站於研磨工 含有一定位環及一定位膠帶,該 圓尺寸之開口,該 背面研磨設 作站之後,用 办〜棚姓/么曰上Page 6 561542 V. Description of the invention (3) Process integration and reduction of cracks. The process of the present invention is that the grinding disk system retaining member can be used as a process of removing the present invention due to warpage. The crystal positioning member system includes a wafer larger than the wafer and the wafer is warped through the opening. The wafer after bending is unloaded to perform wafer cutting. The transportation operation of the present invention and to prevent the wafer from being warped after grinding are broken. The purpose is to unload and transport the wafer after grinding in the same pair of wafers. Grinding discs are adsorbed and transported. Another purpose is to round the backside of the grinding equipment. There is an opening in the size of a positioning ring to attach the wafer stress. The round trip fragmentation is used for positioning on a wafer to flatly attach the carrier to avoid cracking and damage. A tape for positioning wafers is provided. The tape is used to carry the wafer cracks in the positioning, and it can be prepared to use a grinding disc to move between the wafers and provide an integration after grinding to reduce the movement of the wafer. Work is broken and damaged. Another object of the present invention is to provide a positioning member packaged with a positioning member to attach a wafer. The positioning ring system has a larger size than the crystal in order to provide a wafer loading, grinding, and unloading positioning member attaching station. Effect, thereby preventing the grinding of the back grinding product from attaching and attaching the positioning member. After the wafer is ground, the grinding process of the back of the wafer is ground and attached. The positioning ring system has a tape attached to the positioning ring to absorb the grinding, effectively avoiding the grinding. Positioning parts are directly polished on the backside and other workstations to achieve wafer warpage after the process. A wafer attachment workstation is provided in the grinder, which contains a positioning ring and a positioning tape with a circular opening. The backside grinding is set up as a station. After that, use ~ shed name / Mody

561542 五、發明說明(4) 附於該定位環並經由該開口貼附該晶圓之背面,以該定位 膠帶吸收研磨後晶圓麵曲之應力且以該定位環搬運該晶 圓’有效避免研磨後晶圓在卸下或搬運過程之碎裂、損 傷’且能以該定位件直接實施晶圓切割。 依本發明之晶圓背面研磨製程,其係至少包含有以下 步驟: a)執行「提供晶圓」,所提供之晶圓係具有一主動面 及一背面,較佳地,該晶圓之主動面係先貼附一性保 護膠帶; b) 於晶圓 圓之背 c) 面,較 d) 於該晶 附力, 環係具 該定位 位件係 e) 使得該 【發明 請 執行「 背面研 面顯露 執行「 佳地, 執行「 圓之背 該定位 有一大 環並經 為適用 執行「 晶圓可 詳細說 參閱所 裝載晶圓」, 磨設備之研磨 出; 研磨晶圓」, 研磨作業又分 定位件貼附」 面,當貼附時 件係包含有一 於該晶圓尺寸 由該開口貼附 於晶圓切割製 卸下晶圓」, 脫離該研磨盤 明】 附圖式,本發 以吸附固定方式將該晶圓裝載 盤,如真空吸附等,使得該晶 在該研磨盤上研磨該晶圓之背 為粗研磨與細研磨; ’在該研磨盤上貼附一定位件 ’該研磨盤係保持對晶圓之吸 定位環及一定位膠帶,該定位 之開口,該定位膠帶係貼附於 該晶圓之背面,較佳地,該定 程之定位件;及 藉由去除該研磨盤之吸附力, ,由該定位件移動該晶圓。 明將列舉以下之實施例說明·· 1^1 第8頁 561542 五、發明說明(5) 本發明之一具體實施例,一種晶圓背面研磨與晶圓切 割之製程流程圖係如第3圖所示,其中晶圓背面研磨製程 係主要包含有「提供晶圓」41、 「裝載晶圓」42、「研磨 晶圓」43、 「定位件貼附」44及「卸下晶圓」4 5,其依序 說明如后。 在「提供晶圓」4 1步驟中,如第4 A圖所示,準備一晶 圓50 ’該晶圓5〇係具有一主動面51及一對應之背面52,在 主動面51上已完成積體電路製作,如微處理器、微控制 器、記憶體或特殊應用積體電路,較佳地,該晶圓5 〇係為 南頻兄憶體’如DDR 、Rambus、TDR或QDR等隨機存取記憶 體’該晶圓50係可為4、5、6、8或12吋,較佳地,該晶圓 5 0係為8对或1 2吋,在晶圓5 〇之主動面5 1以貼附有一可撕 離之黏性保護膠帶53為較佳。 在「裝載晶圓」42步驟中,如第4B圖所示,以吸附固 疋方式將該晶圓50裝載〔i〇a(iing〕於晶圓背面研磨設備 90之研磨盤61〔grinding chuck〕,如真空吸附或靜電吸 附等方法’使得該晶圓5〇之背面52顯露出,如第5及6圖所 不’研磨盤61係在晶圓背面研磨設備9〇之裝載工作站91, 利用裝載臂91之移動,將晶圓5〇載放至研磨盤61上,之 後’研磨盤6 1係沿一軸心旋動至粗研磨工作站9 2,以進行 「研磨晶圓」43。 在本實施例中,「研磨晶圓」4 3係更詳細地包含有 「粗研磨」431與「細研磨」432作業,如第5及6圖所示, 「粗研磨」431係執行於粗研磨工作站92,「細研磨」432561542 V. Description of the invention (4) Attached to the positioning ring and attached to the back of the wafer through the opening, the positioning tape is used to absorb the stress of the wafer surface after grinding and carry the wafer with the positioning ring 'effectively avoid After grinding, the wafer is chipped or damaged during the unloading or transportation process, and the wafer can be directly diced by the positioning member. The wafer backside grinding process according to the present invention includes at least the following steps: a) The "provide wafer" is performed. The provided wafer has an active side and a back side. Preferably, the active side of the wafer is Attach a protective tape first on the surface; b) on the back of the wafer circle; c) on the surface; more than d) on the wafer, the ring system has the positioning mechanism; e) make the [invention please perform The surface reveals that "the best place to implement, the" back of the circle should be positioned with a large ring and it is suitable for the implementation of the "wafer can be referred to the loaded wafer", grinding equipment grinding; grinding wafer ", the grinding operation is divided into The positioner attaches the "surface. When attaching, the part includes a wafer that is attached to the wafer by the opening and cut and unloaded from the wafer size." Mount the wafer in a fixed manner, such as vacuum adsorption, so that the wafer grinds the back of the wafer on the grinding disc for coarse grinding and fine grinding; 'Attach a positioning member on the grinding disc' to the grinding disc It keeps the suction positioning ring on the wafer and Positioning tape, the positioning opening, the positioning tape is attached to the back of the wafer, preferably, the positioning member of the fixed range; and by removing the adsorption force of the grinding disc, the positioning member moves the Wafer. The description of the following embodiments will be enumerated. 1 ^ 1 Page 8 561542 V. Description of the invention (5) A specific embodiment of the present invention, a process flow chart of wafer back grinding and wafer cutting is shown in Figure 3. As shown, the wafer back grinding process mainly includes "provide wafers" 41, "load wafers" 42, "polished wafers" 43, "attachment of positioning elements" 44 and "unload wafers" 4 5 , Which are explained in order as follows. In the step of “providing wafer” 41, as shown in FIG. 4A, a wafer 50 is prepared. The wafer 50 has an active surface 51 and a corresponding back surface 52. The active surface 51 has been completed. Fabrication of integrated circuits, such as microprocessors, microcontrollers, memory or special application integrated circuits, preferably, the wafer 50 is a random memory such as DDR, Rambus, TDR or QDR Access to memory 'The wafer 50 can be 4, 5, 6, 8 or 12 inches, preferably, the wafer 50 is 8 pairs or 12 inches, on the active side 5 of the wafer 50. 1 It is better to attach a peelable adhesive protective tape 53. In step 42 of "loading the wafer", as shown in Fig. 4B, the wafer 50 is loaded [i0a (iing) on the wafer back grinding device 90 [grinding chuck] by means of adsorption and solidification. For example, methods such as vacuum adsorption or electrostatic adsorption make the back surface 52 of the wafer 50 exposed, as shown in FIGS. 5 and 6. The polishing disc 61 is mounted on the wafer backside polishing equipment 90 at the loading station 91, and is loaded using The movement of the arm 91 places the wafer 50 on the polishing disc 61, and then the 'polishing disc 61' is rotated along one axis to the rough polishing station 9 2 to perform "polishing the wafer" 43. In this implementation In the example, the "grinding wafer" 4 and 3 series include the operations of "rough polishing" 431 and "fine polishing" 432 in more detail. As shown in Figs. "Fine grinding" 432

第9頁 561542 五、發明說明(6) ' S^· \ m Ϊ行於細研磨工作站93,如第4C圖所示,在研磨盤61 疋位於粗研磨工作站92或細研磨工作站93之後,以適當之 研磨頭6 2研磨晶圓5 〇之背面5 2,以形成一研磨後背面田 521,依厚度要求不同,研磨後晶圓5〇之厚度可到達U密 =。m丨1〕以下〔1岔爾約為2 5 · 4微米〕,由於依本發明之 程了不而要考慮晶圓之勉曲度,研磨後晶圓之厚产 至可到達6密爾、4密爾或更低,在「研磨晶圓」43之二, 該研磨盤6 1係旋動至定位件貼附工作站9 4,較佳地,在 「研磨晶圓」43步驟之後,更包含有一「清潔晶圓」’之牛 驟,以去離子水清洗該晶圓,而「清潔晶圓」步驟之執^ 可在定位件貼附工作站94〔即定位件貼附工作站94执 晶圓清潔裝置〕,或者以額外之工作站處理之。叹罝有 在「定位件貼附」44步驟中,如第5及6圖所示,兮 磨盤61係旋動至定位件貼附工作站94,#第41)圖所示Ί 該研磨盤61上貼附一定位件7〇於該晶圓5〇之背面52ι,告 貼附過程時,該研磨盤6丨係仍保持對晶圓5〇之吸附力,田 得晶圓50係水平地設置於研磨盤61上,以利該定位’ 整貼附該晶圓5 0之背面5 2 1,該定位件7 〇係包含有一〜 Γ二=膠帶? ’該定位環71係具有-大於該晶:〇 尺寸之開口72,一般而言,該定位環71係為一硬質 環,該定位膠帶73係貼附於該定位環71並經由該開口 附該晶圓50之背面521 ’較佳地,該定位件7〇係為於 晶圓切割製程之定位件’在本實施例+,定位件作 站94係設置有滾壓裝置63〔如第6及切圖所示〕,如^包覆作Page 9561542 V. Description of the invention (6) 'S ^ · \ m Ϊ walk in the fine grinding station 93, as shown in FIG. 4C, after the grinding disc 61 疋 is located after the coarse grinding station 92 or the fine grinding station 93, Appropriate polishing head 6 2 polishes the back surface 52 of the wafer 5 0 to form a polished back surface field 521. Depending on the thickness requirements, the thickness of the polished wafer 50 can reach U dense =. m 丨 1] The following [1 chalr is about 2 5 · 4 micrometers], because the warpage of the wafer must be considered in accordance with the process of the present invention, the thickness of the wafer after grinding can reach 6 mil, 4 mils or lower, the grinding disc 6 1 is rotated to the positioner attaching station 9 4 in the "grind wafer" 43. Preferably, after the "grind wafer" 43 step, it further includes There is a "clean wafer" step, and the wafer is cleaned with deionized water, and the "clean wafer" step can be performed at the positioner attaching station 94 (ie, the positioner attaching station 94 performs wafer cleaning) Device], or handle it with an additional workstation. Sigh. In step 44 of "attachment of the positioning member", as shown in Figs. 5 and 6, the grinding disc 61 is rotated to the positioner attachment workstation 94, # 41). On the grinding disc 61, Attach a positioning member 70 to the back of the wafer 50. 52 ft. During the attaching process, the grinding disc 6 still maintains the adsorption force to the wafer 50. The Tiande wafer 50 is horizontally arranged on the wafer 50. On the polishing disc 61, to facilitate the positioning, the back surface 5 2 1 of the wafer 50 is affixed, and the positioning member 70 includes one to two tapes? 'The positioning ring 71 has an opening 72 larger than the size of the crystal: Generally speaking, the positioning ring 71 is a rigid ring, and the positioning tape 73 is attached to the positioning ring 71 and attached to the positioning ring 71 through the opening. The back surface 521 of the wafer 50 'Preferably, the positioning member 70 is a positioning member in a wafer dicing process' In this embodiment +, the positioning member working station 94 is provided with a rolling device 63 [such as Cut the picture], such as ^

561542 五、發明說明(7) 有軟質橡膠之滾輪,「定位件貼附」44步驟係在研磨盤6 1 定位後,定位環71先設置於研磨盤61上,再以滚壓方式藉 由該滾壓裝置63將一大面積定位膠帶73滚壓於該定位環71 及該晶圓50之背面521,使得定位膠帶73同時貼覆該定位 環71及該晶圓50 ’再適當裁剪該定位膠帶73,以構成黏貼 晶圓背面521之定位件70。 在「卸下晶圓」45步驟中,如第5及6圖所示,該研磨 盤6 1係旋動至卸下工作站95,在本實施例中,卸下工作站 95與裝載工作站91係整合為為同一工作站,先釋除該研磨 盤61之吸附力,使得該晶圓5〇可脫離該研磨盤η ,通常該 晶圓5 0在無吸附力時會稍許翹曲,由該定位件7 〇移動該晶 圓5 0 ’如第6圖所示,在本實施例中,利用該卸下工作站 95之卸下臂912或其它固定定位環71,不需要接觸晶圓 之背面521將晶圓5〇由晶圓背面研磨設備9〇卸下 〔unloading〕,以供後續之「去除膠帶」46與「 圓」47等製程。 ° ,此,依據本發明之晶圓背面研磨製程,在晶圓背面 研磨没備中’晶圓5〇係被吸附於研磨盤61,以同一盤 61進打「裝載晶圓」42、 「研磨晶圓」43、「定位件貼 卸下晶圓」45之步驟’在研磨後,曰曰日圓50係貼 定位膠帶73,在「卸下晶圓」45步驟及後 可利用定位件7°之定位環71,不需要接 r:=r5r21,如第4F圖所示,在後續「去除膠 帶」裊私中,係以定位件70作為晶圓50之載具放置於一561542 V. Description of the invention (7) Roller with soft rubber, "Positioning parts attaching" 44 steps are performed on the grinding disc 6 1 after positioning, the positioning ring 71 is first set on the grinding disc 61, and then by rolling The rolling device 63 rolls a large area of positioning tape 73 on the positioning ring 71 and the back surface 521 of the wafer 50, so that the positioning tape 73 covers the positioning ring 71 and the wafer 50 at the same time, and then the positioning tape is appropriately cut. 73 to form a positioning member 70 for sticking the back surface 521 of the wafer. In the step of "unloading the wafer" 45, as shown in Figs. 5 and 6, the grinding disc 61 is rotated to the unloading station 95. In this embodiment, the unloading station 95 is integrated with the loading station 91 In order to be the same workstation, the adsorption force of the grinding disc 61 is released first, so that the wafer 50 can be separated from the grinding disc η. Generally, the wafer 50 will be slightly warped when there is no adsorption force. 〇Move the wafer 50 ′ As shown in FIG. 6, in this embodiment, the removal arm 912 or other fixed positioning ring 71 of the unloading workstation 95 is not required to contact the back surface 521 of the wafer to move the wafer. 50. Unloading is performed by the wafer back-side polishing equipment 90 for subsequent processes such as "tape removal" 46 and "round" 47. °, according to the wafer backside polishing process of the present invention, the wafer backside is not ready for polishing. 'Wafer 50 is adsorbed on the polishing disk 61, and the same disk 61 is used to load "wafer wafers 42," and "grind crystals." "Circle 43", "Positioning parts for removing wafers" 45 steps "After grinding, the Japanese Yen 50 series is used to apply positioning tape 73. After the" removing wafers "45 steps and after, the positioning parts can be used for 7 ° positioning The ring 71 does not need to be connected to r: = r5r21. As shown in Figure 4F, in the subsequent "removal of tape", the positioning member 70 is used as the carrier of the wafer 50 and placed in a

561542561542

載台8 1 , 定位件70 未纷出〕 設備9 0與 置於晶圓 為多個晶 係具有製 產生碎裂 本發 為準,任 圍内所作 以撕除 之定位 ,由於 習知晶 切割設 片54, 程整合 之功效 明之保 何熟知 之任何 所示,利用 割設備〔圖 圓背面研磨 膠帶73係貼 晶圓5 0切割 研磨製程, 後晶圓曲 薄研磨。 圍所界定者 之精神和範 保護範園° :護膠帶53,之後,如第 壞71將晶圓5〇搬運至〜曰 β 定位件70係通用於本發:月曰:: 圓切割設備,定位件7〇之: 備之切割台,以切割工具83將 因此,依據本發明之晶圓背面 、減少搬運動作以及防止研磨 ’特別適用於大尺寸晶圓之超 護範圍當視後附之申請專利範 此項技藝者’在不脫離本發明 變化與修改,均屬於本發明之The stage 8 1 and the positioning member 70 are not found.] The device 90 and the wafer are placed on a wafer for multiple crystal systems. The fragmentation of the hair is subject to the positioning. The positioning within the surrounding area is torn off. 54. The function of Cheng integration is clear. Any of the well-known, using cutting equipment [Figure round back grinding tape 73 is attached to the wafer 50 cutting and grinding process, and then the wafer is thinly polished. The spirit and the fan protection of the circle defined by Fan Yuan °: the protective tape 53, and then, as the bad 71, the wafer 50 is transferred to ~ ~ β positioning member 70 is commonly used in the hair: month: :: circular cutting equipment, positioning Piece 70: A prepared cutting table with a cutting tool 83 will therefore apply the patent on the backside of the wafer according to the present invention, reduce the handling action and prevent grinding, especially for the ultra-protective range of large-size wafers. Those skilled in the art can be regarded as belonging to the present invention without departing from the changes and modifications of the present invention.

561542 圖式簡單說明 【圖式說明】 第 1 圖 • 傳 統 晶圓 背 面 研 磨 及 切 割製程 之 流 程 示 意 圖 第 2 圖 ·· 在 傳 統晶 圓 背 面 研 磨 製 程中, 在 研 磨 盤 上 晶 圓 之 截面 示 意 圖 第 3 圖 • 依 據 本發 ‘明 5 一 晶 圓 背 面研磨 及 切 割 製 程 之 流 程 不意 :圖 ’ 第4A至4G 圖 • • 依 據 本發 明 在 晶 圓 背 面研磨 製 程 及 後 續 製 程 中 晶圓 之 截 面 示 意 圖 ’ 第 5 圖 • 依 據 本發 ‘明 , 一 晶 圓 背 面研磨 設 備 之 工 作 站 流 程 示意 :圖 , 及 第 6 圖 • 依 據 本發 ‘明 J 一 晶 圓 背 面研磨 設 備 之 示 意 圖 〇 [圈 1號 說 明 ] 11 提供 晶 圓 12 裝 載 晶 圓 13 研 磨 晶 圓 14 卸 下 晶 圓 15 去 除 膠 帶 16 切 割 前 晶 圓 定 位 17 切 割 晶 圓 20 晶 圓 21 主 動 面 22 背 面 221 研 磨 後 背 面 23 保 護 膠 帶 31 研 磨 盤 32 研 磨 頭 41 提供 晶 圓 42 裝 載 晶 圓 43 研 磨 晶 圓 431 粗 研 磨 432 細 研 磨 44 定 位 件 貼 附 45 卸 下 晶 圓 46 去 除 膠 帶 47 切 割 晶 圓 50 晶 圓 51 主 動 面 52 背 面561542 Brief description of the drawings [Illustration of the drawings] Figure 1 • Schematic diagram of the traditional wafer back grinding and dicing process Figure 2 • In the traditional wafer back grinding process, the cross section of the wafer on the polishing disc is the third Figure • According to this article, “Ming 5: The process of wafer back grinding and dicing process is unintentional: Figures” 4A to 4G Figures • • According to the present invention, the cross section of the wafer in the wafer back grinding process and subsequent processes' Section 5 Figure • Schematic diagram of the work flow of a wafer back grinding equipment according to the present invention: Figure, and Figure 6 • Schematic diagram of the back grinding equipment of a wafer according to the present invention J [Circle No. 1 Description] 11 Provide crystals Circle 12 Load wafer 13 Grind wafer 14 Remove wafer 15 Remove tape 16 Wafer positioning before cutting 17 Cutting wafer 20 Wafer 21 Active surface 22 Back surface 221 After grinding back surface 23 Protective tape 31 Grinding disc 32 Grinding head 41 Provide wafer 42 Loading wafer 43 Grinding wafer 431 Rough grinding 432 Fine grinding 44 Positioning attachment 45 Unloading Lower wafer 46 Remove tape 47 Cut wafer 50 Wafer 51 Active surface 52 Back

561542 圖式簡單說明 521 研磨後背面 53 保護膠帶 54 晶片 61 研 磨 盤 62 研 磨 頭 70 定 位 件 71 定 位 環 72 開 σ 81 載 台 82 切 割 台 90 晶 圓 背 面 研 磨 設備 91 裝 載 工 作 站 911 裝 載 臂 92 粗 研 磨 工 作 站 94 定 位 件 貼 附 工 作站 63 滾壓裝置 73 定位膠帶 83 切割工具 9 1 2卸下臂 9 3 細研磨工作站 95 卸下工作站561542 Brief description of the diagram 521 Back surface after grinding 53 Protective tape 54 Wafer 61 Grinding disc 62 Grinding head 70 Positioner 71 Positioning ring 72 Open σ 81 Stage 82 Cutting table 90 Wafer back grinding equipment 91 Loading station 911 Loading arm 92 Rough grinding Work station 94 Positioning unit attached to work station 63 Rolling device 73 Positioning tape 83 Cutting tool 9 1 2 Remove arm 9 3 Fine grinding station 95 Remove station

第14頁Page 14

Claims (1)

π丄M2 六、申請專利範圍 【申請專利範圍】 1、 一種晶圓背面 提供一晶圓, 以吸附固定方 盤,使得該晶圓 在該研磨盤上 在該研磨盤上 時,該研磨盤係 卸下〔un 1 oad 附力,以供該定 2、 如申請專利範 中在提供晶圓之 保護膠帶。 3、 如申請專利範 中在提供晶圓之 忖。 研磨製程,包含: 该晶圓係具有一主動面及一背面· 式裝載〔loading〕該晶圓於一研磨 之背面顯露出; 研磨該晶圓之背面; 貼附一定位件於該晶圓之背面,當貼附 保持對晶圓之吸附力;及 inS〕該晶圓’藉由去除該研磨盤之吸 位件移動該晶圓。 圍第1項所述之晶圓背面研磨製程,其 步驟中,該晶圓之主動面係貼附有黏性 圍第1項所述之晶圓背面研磨製程,其 步驟中,該晶圓之尺寸係為八吋或十二 、如申請專利範圍第1項所述之晶圓背面研磨製程,其 中在研磨步驟中,更區分為粗研磨與細研磨。 、如申請專利範圍第1或4項所述之晶圓背面研磨製 程’其中在研磨步驟中,該晶圓係研磨至12密爾 〔mil〕以下。 、如申請專利範圍第1項所述之晶圓背面研磨製程,其 中在研磨步驟之後,更包含有/清潔晶圓之步驟。 、如申請專利範圍第1項所述之晶圓背面研磨製程,其π 丄 M2 6. Scope of patent application [Scope of patent application] 1. A wafer is provided on the back of a wafer to attract and fix a square disk, so that when the wafer is on the polishing disk, the polishing disk is Remove the [un 1 oad adhesive force for the purpose of 2, and as provided in the patent application, provide the protective tape for the wafer. 3. For example, in the case of applying for a patent, a wafer is provided. The polishing process includes: the wafer has an active surface and a back surface. The wafer is exposed on a polished back surface; the back surface of the wafer is polished; a positioning member is attached to the wafer. On the back side, the wafer's adsorption force is maintained when attached; and inS] the wafer 'moves the wafer by removing the suction member of the polishing disc. The wafer back grinding process described in item 1 is described in the step. In the step, the active surface of the wafer is attached with the wafer back grinding process described in item 1 in the step. In the step, the wafer is polished. The size is eight inches or twelve. The wafer back grinding process described in item 1 of the scope of patent application, in the grinding step, it is further divided into coarse grinding and fine grinding. 2. The wafer back grinding process according to item 1 or 4 of the scope of the patent application, wherein in the grinding step, the wafer is ground to less than 12 mils [mil]. The wafer back grinding process described in item 1 of the patent application scope, which further includes a step of cleaning / cleaning the wafer after the grinding step. The wafer back grinding process described in item 1 of the patent application scope, which 第15頁 561542Page 561 542 :ί =附步驟之中,該定位件係包含有一定位環及一定 口/ ▼,其中該定位環係具有一大於該晶圓尺寸之開 =,該定位膠帶係貼附於該定位環並經由該開口貼附該 日日圓之背面。 如申凊專利範圍第7項所述之晶圓背面研磨製程,其 、在貼附步驟之中,先定位該定位環於該研磨盤上,再 以滾壓方式將該定位膠帶同時貼附該定位環及該晶 背面。 種日日圓背面研磨設備,包含有: 一裝載工作站 該研磨盤; 一研磨工作站 面; 至少一研磨盤,用以吸附固定一晶圓; 用以接收該研磨盤,以裝載該晶圓於 用以接收該研磨盤並研磨該晶圓之背 一定位件貼附工作站,用以接收該研磨盤並貼附一定 位件於該晶圓之背面;及 一卸下工作站’用以接收該研磨盤並去除該研磨盤之 吸附力。 1 〇、如申請專利範圍第9項所述之晶圓背面研磨設備, 其中該研磨工作站係包含有粗研磨工作站與細研磨工 作站。 11、如申請專利範圍第9項所述之晶圓背面研磨設備, 其中該定位件貼附工作站係包含有晶圓清潔裝置。 1 2、如申請專利範圍第9或11項所述之晶圓背面研磨設: ί = In the attached step, the positioning member includes a positioning ring and a certain opening / ▼, wherein the positioning ring has an opening larger than the size of the wafer =, the positioning tape is attached to the positioning ring and passes through The opening is attached to the back of the yen. According to the wafer back grinding process described in item 7 of the patent scope of the application, during the attaching step, the positioning ring is first positioned on the grinding disk, and then the positioning tape is simultaneously attached to the positioning tape by rolling. The positioning ring and the back of the crystal. A kind of Japanese yen back grinding equipment includes: a loading workstation and a grinding disk; a grinding workstation surface; at least one grinding disk for sucking and fixing a wafer; receiving the grinding disk for loading the wafer on A positioning member attaching station for receiving the grinding disc and grinding the wafer, for receiving the grinding disc and attaching a positioning member to the back of the wafer; and a unloading station 'for receiving the grinding disc and Remove the adsorption force of the grinding disc. 10. The wafer backside polishing equipment according to item 9 of the scope of the patent application, wherein the polishing workstation includes a rough polishing workstation and a fine polishing workstation. 11. The wafer back grinding device according to item 9 of the scope of patent application, wherein the positioning member attaching station includes a wafer cleaning device. 1 2. The wafer back grinding device as described in item 9 or 11 of the scope of patent application 第16頁 561542 六、申請專利範圍 備’其中該定位件貼附工作站所提供之定位件係包含 有一定位環及一定位膠帶,該定位環係具有一大於該 晶圓尺寸之開口,該定位膠帶係貼附於該定位環並經 由該開口貼附該晶圓之背面。 1 3、如申請專利範圍第丨2項所述之晶圓背面研磨設備, 其中該定位件貼附工作站係包含有一滾壓裝置,用以 滾壓該定位膠帶,使得該定位膠帶同時貼附該定位環 及該晶圓之背面。 1 4、如申請專利範圍第9項所述之晶圓背面研磨設備, 其中該裝載工作站與該卸下工作站係為同一工作站。 15、一種晶圓背面研磨設備’其包含有一用以吸附固定 晶圓之研磨盤,該研磨台係可活動於裝載工作站、研 磨工作站及定位件貼附工作站之間,其中該定位件貼 附工作站係提供一定位件於該研磨盤上,該定位件係 包含有一定位環及一定位膠帶,該定位環係具有一大^ 於該晶圓尺寸之開口,該定位膠帶係貼附於該定位環 並經由該開口貼附該晶圓之背面。 1 6、如申请專利範圍第1 5項所述之晶圓背面研磨設備, 其中該研磨盤係以沿一轴心旋動於裝載工作站、研磨 工作站及定位件貼附工作站之間。 1 7、一種晶圓背面研磨製程,係至少包含有裝載晶圓、 研磨晶圓及定位件貼附步驟,其中上述步驟係$在同 一研磨盤實施且該晶圓之背面係呈顯露,其特徵在於 在定位件貼附步驟中,該晶圓係吸附於研磨盤,使得Page 16561542 6. Application scope of patent: The positioning part provided by the positioning part attaching station includes a positioning ring and a positioning tape, the positioning ring has an opening larger than the size of the wafer, and the positioning tape It is attached to the positioning ring and attached to the back of the wafer through the opening. 1 3. The wafer back grinding equipment according to item 丨 2 of the patent application scope, wherein the positioning member attaching workstation includes a rolling device for rolling the positioning tape so that the positioning tape is simultaneously attached to the positioning tape. The positioning ring and the back of the wafer. 14. The wafer back-grinding equipment according to item 9 of the scope of patent application, wherein the loading workstation and the unloading workstation are the same workstation. 15. A wafer backside grinding device 'comprising a grinding disk for attracting and fixing a wafer, the grinding table is movable between a loading station, a grinding station, and a positioning member attaching station, wherein the positioning member attaching station A positioning member is provided on the grinding disc. The positioning member includes a positioning ring and a positioning tape. The positioning ring has an opening larger than the size of the wafer. The positioning tape is attached to the positioning ring. The back of the wafer is affixed through the opening. 16. The wafer backside grinding equipment according to item 15 of the scope of the patent application, wherein the grinding disc is rotated between a loading station, a grinding station, and a positioning member attaching station along an axis. 17. A wafer backside grinding process includes at least the steps of loading wafers, grinding wafers, and positioning parts. The above steps are performed on the same grinding disk and the backside of the wafer is exposed. Its characteristics In the step of attaching the positioning member, the wafer is attracted to the polishing disc, so that 561542 具有一 該定位 續搬運 圍第17 ,在定 製程之 六、申請專利範圍 該定位件平整貼附於該 1 8、如申請專利範圍第j 7 其特徵在於,在定位件 有一定位件,該定位件 帶,該定位環係 位膠帶係貼附於 背面’使得在後 19、如申請專利範 程,其特徵在於 適用於晶圓切割 晶圓之背面。 項所述之晶圓背面研磨製程, 貼附步驟中,該研磨盤上提供 係包含有一定位環及一定位膠 大於該晶圓尺寸之開口,該定 ϊ哀並經由該開口貼附該晶圓之 過程不需要接觸晶圓之背面。 或18項所述之晶圓背面研磨 ,件貼附中該定位件係 定位件。 q561542 has a number 17 of the positioning and continued handling circle. In the sixth process of customization, the positioning range of the patent application is flatly attached to the 18th. If the scope of the patent application is j7, it is characterized in that there is a positioning part on the positioning part. The positioning member tape, the positioning ring positioning tape is attached to the back surface, so that in the later 19th, if the patent application procedure is adopted, it is characterized in that it is suitable for the back surface of the wafer cutting wafer. In the wafer back grinding process described in the item, in the attaching step, an opening is provided on the grinding disc including a positioning ring and a positioning glue larger than the size of the wafer, and the wafer is attached through the opening. The process does not need to touch the back of the wafer. Or the wafer back grinding according to item 18, and the positioning member is a positioning member in the attachment. q 第18頁Page 18
TW91124412A 2002-10-18 2002-10-18 Process and apparatus for grinding a wafer backside TW561542B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287127B2 (en) 2014-02-17 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer back-side polishing system and method for integrated circuit device manufacturing processes
TWI569351B (en) * 2015-04-30 2017-02-01 環球晶圓股份有限公司 Wafer rotating apparatus
CN113380613A (en) * 2021-05-31 2021-09-10 紫光宏茂微电子(上海)有限公司 Wafer thinning processing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287127B2 (en) 2014-02-17 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer back-side polishing system and method for integrated circuit device manufacturing processes
US9559021B2 (en) 2014-02-17 2017-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer back-side polishing system and method for integrated circuit device manufacturing processes
US9852899B2 (en) 2014-02-17 2017-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer back-side polishing system and method for integrated circuit device manufacturing processes
TWI569351B (en) * 2015-04-30 2017-02-01 環球晶圓股份有限公司 Wafer rotating apparatus
US9611548B2 (en) 2015-04-30 2017-04-04 Globalwafers Co., Ltd. Wafer rotating apparatus
CN113380613A (en) * 2021-05-31 2021-09-10 紫光宏茂微电子(上海)有限公司 Wafer thinning processing method

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