JP6254445B2 - 荷電粒子ビーム装置 - Google Patents

荷電粒子ビーム装置 Download PDF

Info

Publication number
JP6254445B2
JP6254445B2 JP2014002260A JP2014002260A JP6254445B2 JP 6254445 B2 JP6254445 B2 JP 6254445B2 JP 2014002260 A JP2014002260 A JP 2014002260A JP 2014002260 A JP2014002260 A JP 2014002260A JP 6254445 B2 JP6254445 B2 JP 6254445B2
Authority
JP
Japan
Prior art keywords
voltage
deflector
electric field
magnetic field
source circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014002260A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015130309A (ja
JP2015130309A5 (https=
Inventor
李 ウェン
ウェン 李
涼 門井
涼 門井
一樹 池田
一樹 池田
弘之 高橋
弘之 高橋
源 川野
川野  源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2014002260A priority Critical patent/JP6254445B2/ja
Priority to US15/109,230 priority patent/US9679740B2/en
Priority to PCT/JP2014/083200 priority patent/WO2015104959A1/ja
Publication of JP2015130309A publication Critical patent/JP2015130309A/ja
Publication of JP2015130309A5 publication Critical patent/JP2015130309A5/ja
Priority to US15/613,941 priority patent/US10424459B2/en
Application granted granted Critical
Publication of JP6254445B2 publication Critical patent/JP6254445B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/1504Associated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/1508Combined electrostatic-electromagnetic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/152Magnetic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1534Aberrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2804Scattered primary beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2806Secondary charged particle

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2014002260A 2014-01-09 2014-01-09 荷電粒子ビーム装置 Active JP6254445B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014002260A JP6254445B2 (ja) 2014-01-09 2014-01-09 荷電粒子ビーム装置
US15/109,230 US9679740B2 (en) 2014-01-09 2014-12-16 Charged particle beam device
PCT/JP2014/083200 WO2015104959A1 (ja) 2014-01-09 2014-12-16 荷電粒子ビーム装置
US15/613,941 US10424459B2 (en) 2014-01-09 2017-06-05 Charged particle beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014002260A JP6254445B2 (ja) 2014-01-09 2014-01-09 荷電粒子ビーム装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017230024A Division JP6408116B2 (ja) 2017-11-30 2017-11-30 荷電粒子ビーム装置

Publications (3)

Publication Number Publication Date
JP2015130309A JP2015130309A (ja) 2015-07-16
JP2015130309A5 JP2015130309A5 (https=) 2017-02-09
JP6254445B2 true JP6254445B2 (ja) 2017-12-27

Family

ID=53523797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014002260A Active JP6254445B2 (ja) 2014-01-09 2014-01-09 荷電粒子ビーム装置

Country Status (3)

Country Link
US (2) US9679740B2 (https=)
JP (1) JP6254445B2 (https=)
WO (1) WO2015104959A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6254445B2 (ja) * 2014-01-09 2017-12-27 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
US10393509B2 (en) * 2014-07-30 2019-08-27 Hitachi High-Technologies Corporation Pattern height measurement device and charged particle beam device
US10090131B2 (en) * 2016-12-07 2018-10-02 Kla-Tencor Corporation Method and system for aberration correction in an electron beam system
WO2019043946A1 (ja) * 2017-09-04 2019-03-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2019187118A1 (ja) * 2018-03-30 2019-10-03 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
KR102660825B1 (ko) * 2018-10-19 2024-04-26 에이에스엠엘 네델란즈 비.브이. 멀티 빔 검사 장치에서 전자 빔들을 정렬하기 위한 시스템 및 방법
JP7155393B2 (ja) * 2019-03-08 2022-10-18 株式会社日立ハイテク 荷電粒子ビーム装置
JP2021197263A (ja) * 2020-06-12 2021-12-27 株式会社ニューフレアテクノロジー マルチ電子ビーム画像取得装置及びマルチ電子ビーム画像取得方法
CN112071732B (zh) * 2020-07-28 2021-11-19 西安交通大学 一种可编码阵列式静电偏转器、聚焦偏转系统及设计方法
WO2022135842A1 (en) * 2020-12-22 2022-06-30 Asml Netherlands B.V. Electron optical column and method for directing a beam of primary electrons onto a sample
EP4086934A1 (en) * 2021-05-04 2022-11-09 ASML Netherlands B.V. Electron optical column and method for directing a beam of primary electrons onto a sample

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0260042A (ja) * 1988-08-24 1990-02-28 Hitachi Ltd 荷電粒子線応用装置の駆動電源
JP2821153B2 (ja) * 1988-11-24 1998-11-05 株式会社日立製作所 荷電粒子線応用装置
JP3867048B2 (ja) * 2003-01-08 2007-01-10 株式会社日立ハイテクノロジーズ モノクロメータ及びそれを用いた走査電子顕微鏡
JP4943733B2 (ja) 2005-04-28 2012-05-30 株式会社日立ハイテクノロジーズ 荷電粒子ビームを用いた検査方法及び検査装置
US7462828B2 (en) 2005-04-28 2008-12-09 Hitachi High-Technologies Corporation Inspection method and inspection system using charged particle beam
JP4988216B2 (ja) 2006-02-03 2012-08-01 株式会社日立ハイテクノロジーズ 収差補正装置を搭載した荷電粒子線装置
JP2008181786A (ja) 2007-01-25 2008-08-07 Hitachi High-Technologies Corp 荷電粒子線装置
JP2010519697A (ja) 2007-02-22 2010-06-03 アプライド マテリアルズ イスラエル リミテッド 高スループットsemツール
JP4977509B2 (ja) * 2007-03-26 2012-07-18 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP5237734B2 (ja) 2008-09-24 2013-07-17 日本電子株式会社 収差補正装置および該収差補正装置を備える荷電粒子線装置
JP6254445B2 (ja) * 2014-01-09 2017-12-27 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置

Also Published As

Publication number Publication date
JP2015130309A (ja) 2015-07-16
WO2015104959A1 (ja) 2015-07-16
US10424459B2 (en) 2019-09-24
US20170271121A1 (en) 2017-09-21
US20160329186A1 (en) 2016-11-10
US9679740B2 (en) 2017-06-13

Similar Documents

Publication Publication Date Title
JP6254445B2 (ja) 荷電粒子ビーム装置
JP6155137B2 (ja) 走査型電子顕微鏡を用いた処理装置及び処理方法
JP6408116B2 (ja) 荷電粒子ビーム装置
US9230775B2 (en) Charged particle instrument
JP6677519B2 (ja) 電子顕微鏡および収差測定方法
US9704687B2 (en) Charged particle beam application device
JP5927067B2 (ja) 計測検査装置、及び計測検査方法
US8859962B2 (en) Charged-particle microscope
US11430630B2 (en) Charged particle beam apparatus
US8735814B2 (en) Electron beam device
JP5972663B2 (ja) 電子ビーム応用装置および電子ビーム調整方法
JP4273141B2 (ja) 集束イオンビーム装置
TWI753374B (zh) 荷電粒子束裝置
JP7051655B2 (ja) 荷電粒子線装置
JP2008084823A (ja) 荷電粒子線調整方法及び荷電粒子線装置
JP6563576B2 (ja) 荷電粒子ビーム装置
JP6282076B2 (ja) 荷電粒子線装置
JP4431624B2 (ja) 荷電粒子線調整方法、及び荷電粒子線装置
JP2020074294A (ja) 荷電粒子線装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170829

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171024

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171130

R150 Certificate of patent or registration of utility model

Ref document number: 6254445

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350