JP6254046B2 - ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ - Google Patents
ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ Download PDFInfo
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- JP6254046B2 JP6254046B2 JP2014108048A JP2014108048A JP6254046B2 JP 6254046 B2 JP6254046 B2 JP 6254046B2 JP 2014108048 A JP2014108048 A JP 2014108048A JP 2014108048 A JP2014108048 A JP 2014108048A JP 6254046 B2 JP6254046 B2 JP 6254046B2
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- base layer
- heterojunction bipolar
- bipolar transistor
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 27
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Description
101 基板
102 サブコレクタ層
103 コレクタ層
104 第1のベース層
105 第2のベース層
106 エミッタ層
107 エミッタコンタクト層
108 第1のノンアロイ層
109 第2のノンアロイ層
110 ベース層
Claims (5)
- GaAsからなるコレクタ層と、
前記コレクタ層上に形成されると共にInGaAsからなるベース層と、
前記ベース層上に形成されると共にInGaPからなるエミッタ層と、
を備えるヘテロ接合バイポーラトランジスタ用エピタキシャルウェハにおいて、
前記コレクタ層と前記ベース層との間にGaAsからなるベース層が挿入されていることを特徴とするヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ。 - GaAsからなるベース層は、膜厚が20nm以下である請求項1に記載のヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ。
- InGaAsからなるベース層は、膜厚が臨界膜厚以下である請求項1又は2に記載のヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ。
- InGaAsからなるベース層は、In組成が0.16以上0.21以下である請求項1から3の何れか一項に記載のヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ。
- 請求項1から4の何れか一項に記載のヘテロ接合バイポーラトランジスタ用エピタキシャルウェハを使用して作製されていることを特徴とするヘテロ接合バイポーラトランジスタ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014108048A JP6254046B2 (ja) | 2014-05-26 | 2014-05-26 | ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ |
TW104116831A TW201603142A (zh) | 2014-05-26 | 2015-05-26 | 異質接合雙極性電晶體用磊晶晶圓及異質接合雙極性電晶體 |
US15/313,825 US20170207329A1 (en) | 2014-05-26 | 2015-05-26 | Epitaxial wafer for heterojunction bipolar transistor and heterojunction bipolar transistor |
PCT/JP2015/065061 WO2015182593A1 (ja) | 2014-05-26 | 2015-05-26 | ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014108048A JP6254046B2 (ja) | 2014-05-26 | 2014-05-26 | ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015225884A JP2015225884A (ja) | 2015-12-14 |
JP6254046B2 true JP6254046B2 (ja) | 2017-12-27 |
Family
ID=54698918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014108048A Active JP6254046B2 (ja) | 2014-05-26 | 2014-05-26 | ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170207329A1 (ja) |
JP (1) | JP6254046B2 (ja) |
TW (1) | TW201603142A (ja) |
WO (1) | WO2015182593A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10256329B2 (en) * | 2015-09-04 | 2019-04-09 | Win Semiconductors Corp. | Heterojunction bipolar transistor |
JP7403201B2 (ja) * | 2019-07-19 | 2023-12-22 | 信一郎 高谷 | 化合物半導体ヘテロ接合バイポーラトランジスタ |
CN117747691B (zh) * | 2023-11-22 | 2024-08-13 | 广州市南沙区北科光子感知技术研究院 | 双色势垒型GaSb基InAs/InAsSb异质结光电晶体管及制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138949A (ja) * | 1989-10-24 | 1991-06-13 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタ |
JPH05114603A (ja) * | 1991-08-15 | 1993-05-07 | Fujitsu Ltd | バイポーラ型半導体装置 |
US6670653B1 (en) * | 1999-07-30 | 2003-12-30 | Hrl Laboratories, Llc | InP collector InGaAsSb base DHBT device and method of forming same |
JP2002270817A (ja) * | 2001-03-13 | 2002-09-20 | Nec Corp | バイポーラトランジスタ |
US6692326B2 (en) * | 2001-06-16 | 2004-02-17 | Cld, Inc. | Method of making organic electroluminescent display |
JP3629247B2 (ja) * | 2002-04-18 | 2005-03-16 | Nec化合物デバイス株式会社 | ダブルヘテロ接合バイポーラ・トランジスタ |
JP4321018B2 (ja) * | 2002-07-26 | 2009-08-26 | 日立電線株式会社 | ヘテロ接合バイポーラトランジスタ |
US7019383B2 (en) * | 2003-02-26 | 2006-03-28 | Skyworks Solutions, Inc. | Gallium arsenide HBT having increased performance and method for its fabrication |
-
2014
- 2014-05-26 JP JP2014108048A patent/JP6254046B2/ja active Active
-
2015
- 2015-05-26 US US15/313,825 patent/US20170207329A1/en not_active Abandoned
- 2015-05-26 WO PCT/JP2015/065061 patent/WO2015182593A1/ja active Application Filing
- 2015-05-26 TW TW104116831A patent/TW201603142A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW201603142A (zh) | 2016-01-16 |
US20170207329A1 (en) | 2017-07-20 |
WO2015182593A1 (ja) | 2015-12-03 |
JP2015225884A (ja) | 2015-12-14 |
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