JP6247918B2 - 放射線イメージセンサ - Google Patents
放射線イメージセンサ Download PDFInfo
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- JP6247918B2 JP6247918B2 JP2013254263A JP2013254263A JP6247918B2 JP 6247918 B2 JP6247918 B2 JP 6247918B2 JP 2013254263 A JP2013254263 A JP 2013254263A JP 2013254263 A JP2013254263 A JP 2013254263A JP 6247918 B2 JP6247918 B2 JP 6247918B2
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- semiconductor substrate
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- radiation image
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- 230000005855 radiation Effects 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 55
- 239000004020 conductor Substances 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 47
- 239000003990 capacitor Substances 0.000 claims description 45
- 238000009792 diffusion process Methods 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 98
- 238000012986 modification Methods 0.000 description 25
- 230000004048 modification Effects 0.000 description 25
- 239000002184 metal Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 230000010354 integration Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
Description
図8は、上記実施形態の第1変形例に係る回路基板3Aの一部を拡大して示す上面図であって、図5と同様に、各画素回路部3aが有する上部金属膜(トップメタル)を省略した様子を示している。なお、本変形例の回路基板3Aの構成は、以下に述べる点を除き、上記実施形態の回路基板3の構成と同様である。
図9及び図10は、上記実施形態の第2変形例に係る放射線イメージセンサ1Cの構成を示す断面図であって、図5のVI−VI断面及びVII−VII断面に相当する断面をそれぞれ示している。
Claims (5)
- 放射線を吸収して電荷を発生する電荷発生部と、前記電荷発生部において発生した電荷を画素回路部毎に蓄積し、各画素回路部から前記電荷を転送する回路基板とを備え、前記電荷発生部が前記回路基板上に配置されて成る放射線イメージセンサであって、
前記回路基板は半導体基板を有し、
各画素回路部は、
前記半導体基板上に形成され、前記電荷発生部において発生した電荷を蓄積する容量部と、
前記半導体基板上に形成され、前記容量部に一端が接続され、各画素回路部から出力された電荷を転送するための読出用配線に他端が接続されたMOS型トランジスタと
を有し、
前記容量部が、前記半導体基板の一部の領域と、前記一部の領域上に設けられ、各画素回路部の配線を介して前記電荷発生部と電気的に接続されるとともに、前記配線から分岐した配線を介して前記MOS型トランジスタの前記一端と電気的に接続された導電体層と、前記一部の領域及び前記導電体層の間に挟まれた絶縁層とを含むことを特徴とする、放射線イメージセンサ。 - 前記導電体層が、前記MOS型トランジスタのゲート電極の構成材料と同一の材料から成ることを特徴とする、請求項1に記載の放射線イメージセンサ。
- 前記容量部が、前記半導体基板とは異なる導電型を与える不純物が前記半導体基板の前記一部の領域に隣接する領域に拡散されて成る不純物拡散領域を更に有し、
前記不純物拡散領域と前記導電体層とが互いに電気的に接続されていることを特徴とする、請求項1または2に記載の放射線イメージセンサ。 - バルク状の前記電荷発生部と前記回路基板とがバンプボンディングにより互いに接続されていることを特徴とする、請求項1〜3のいずれか一項に記載の放射線イメージセンサ。
- 前記電荷発生部は、放射線を吸収して電荷を発生する材料が前記回路基板上に蒸着されて成ることを特徴とする、請求項1〜3のいずれか一項に記載の放射線イメージセンサ。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013254263A JP6247918B2 (ja) | 2013-12-09 | 2013-12-09 | 放射線イメージセンサ |
KR1020167016388A KR102309081B1 (ko) | 2013-12-09 | 2014-11-28 | 방사선 이미지 센서 |
EP14869920.0A EP3082164B1 (en) | 2013-12-09 | 2014-11-28 | Radiation image sensor |
US15/102,376 US9761631B2 (en) | 2013-12-09 | 2014-11-28 | Radiation image sensor |
ES14869920T ES2918798T3 (es) | 2013-12-09 | 2014-11-28 | Sensor de imágenes de radiación |
PCT/JP2014/081635 WO2015087723A1 (ja) | 2013-12-09 | 2014-11-28 | 放射線イメージセンサ |
CN201480067178.6A CN105981172B (zh) | 2013-12-09 | 2014-11-28 | 放射线影像传感器 |
TW103142230A TWI648847B (zh) | 2013-12-09 | 2014-12-04 | 放射線影像感測器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013254263A JP6247918B2 (ja) | 2013-12-09 | 2013-12-09 | 放射線イメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015115357A JP2015115357A (ja) | 2015-06-22 |
JP6247918B2 true JP6247918B2 (ja) | 2017-12-13 |
Family
ID=53371034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013254263A Active JP6247918B2 (ja) | 2013-12-09 | 2013-12-09 | 放射線イメージセンサ |
Country Status (8)
Country | Link |
---|---|
US (1) | US9761631B2 (ja) |
EP (1) | EP3082164B1 (ja) |
JP (1) | JP6247918B2 (ja) |
KR (1) | KR102309081B1 (ja) |
CN (1) | CN105981172B (ja) |
ES (1) | ES2918798T3 (ja) |
TW (1) | TWI648847B (ja) |
WO (1) | WO2015087723A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9955930B2 (en) * | 2014-10-31 | 2018-05-01 | Koninklijke Philips N.V. | Sensor device and imaging system for detecting radiation signals |
WO2018097025A1 (ja) | 2016-11-25 | 2018-05-31 | 浜松ホトニクス株式会社 | フォトン検出器 |
JP6899344B2 (ja) | 2018-02-22 | 2021-07-07 | 株式会社東芝 | 放射線検出器 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02208974A (ja) * | 1989-02-09 | 1990-08-20 | Hitachi Ltd | 固体撮像装置 |
US5319206A (en) | 1992-12-16 | 1994-06-07 | E. I. Du Pont De Nemours And Company | Method and apparatus for acquiring an X-ray image using a solid state device |
JPH07130951A (ja) * | 1993-10-29 | 1995-05-19 | Toshiba Corp | 半導体集積回路装置 |
CA2242743C (en) * | 1998-07-08 | 2002-12-17 | Ftni Inc. | Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging |
JP3916823B2 (ja) * | 1999-04-07 | 2007-05-23 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法、並びにフラットパネル型イメージセンサ |
EP1073267B1 (en) * | 1999-07-30 | 2010-12-22 | Canon Kabushiki Kaisha | Radiation image pickup device |
JP2003004857A (ja) * | 2001-06-25 | 2003-01-08 | Canon Inc | 放射線検出装置及びそれを用いた放射線撮影システム |
JP2003133538A (ja) * | 2001-10-26 | 2003-05-09 | Nippon Hoso Kyokai <Nhk> | 半導体装置およびその製造方法 |
JP3913070B2 (ja) * | 2002-02-04 | 2007-05-09 | 新電元工業株式会社 | X線光電変換器 |
JP2003240861A (ja) * | 2002-02-20 | 2003-08-27 | Canon Inc | 放射線検出素子、放射線撮像装置及び放射線検出方法 |
JP4304927B2 (ja) * | 2002-07-16 | 2009-07-29 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP4502278B2 (ja) * | 2004-02-27 | 2010-07-14 | 国立大学法人東北大学 | 固体撮像装置、ラインセンサ、光センサおよび固体撮像装置の動作方法 |
JP2007228460A (ja) * | 2006-02-27 | 2007-09-06 | Mitsumasa Koyanagi | 集積センサを搭載した積層型半導体装置 |
US20090201400A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated image sensor with global shutter and storage capacitor |
JP5155696B2 (ja) * | 2008-03-05 | 2013-03-06 | 富士フイルム株式会社 | 撮像素子 |
JP2009246014A (ja) * | 2008-03-28 | 2009-10-22 | Ricoh Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP5337395B2 (ja) * | 2008-03-28 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | ノイズフィルタ及びノイズフィルタ内蔵アンプ回路 |
JP4835710B2 (ja) | 2009-03-17 | 2011-12-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
JP6125017B2 (ja) * | 2013-08-07 | 2017-05-10 | シャープ株式会社 | X線イメージセンサー用基板 |
KR101334213B1 (ko) * | 2013-09-02 | 2013-11-29 | (주)실리콘화일 | 칩 적층 이미지 센서 |
-
2013
- 2013-12-09 JP JP2013254263A patent/JP6247918B2/ja active Active
-
2014
- 2014-11-28 EP EP14869920.0A patent/EP3082164B1/en active Active
- 2014-11-28 CN CN201480067178.6A patent/CN105981172B/zh active Active
- 2014-11-28 ES ES14869920T patent/ES2918798T3/es active Active
- 2014-11-28 WO PCT/JP2014/081635 patent/WO2015087723A1/ja active Application Filing
- 2014-11-28 KR KR1020167016388A patent/KR102309081B1/ko active IP Right Grant
- 2014-11-28 US US15/102,376 patent/US9761631B2/en active Active
- 2014-12-04 TW TW103142230A patent/TWI648847B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20160096623A (ko) | 2016-08-16 |
KR102309081B1 (ko) | 2021-10-06 |
US9761631B2 (en) | 2017-09-12 |
WO2015087723A1 (ja) | 2015-06-18 |
CN105981172A (zh) | 2016-09-28 |
TWI648847B (zh) | 2019-01-21 |
TW201528491A (zh) | 2015-07-16 |
EP3082164A1 (en) | 2016-10-19 |
CN105981172B (zh) | 2020-02-21 |
EP3082164B1 (en) | 2022-06-01 |
JP2015115357A (ja) | 2015-06-22 |
EP3082164A4 (en) | 2017-07-19 |
ES2918798T3 (es) | 2022-07-20 |
US20160315108A1 (en) | 2016-10-27 |
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