JP6218426B2 - 発光素子及び発光素子パッケージ - Google Patents

発光素子及び発光素子パッケージ Download PDF

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Publication number
JP6218426B2
JP6218426B2 JP2013096214A JP2013096214A JP6218426B2 JP 6218426 B2 JP6218426 B2 JP 6218426B2 JP 2013096214 A JP2013096214 A JP 2013096214A JP 2013096214 A JP2013096214 A JP 2013096214A JP 6218426 B2 JP6218426 B2 JP 6218426B2
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Japan
Prior art keywords
light emitting
layer
buffer layer
electrode
refractive index
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JP2013096214A
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English (en)
Japanese (ja)
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JP2013254939A5 (https=
JP2013254939A (ja
Inventor
クォン・オーミン
ウォン・ジョンハク
ベク・クァンスン
ソ・ソンジン
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2013096214A 2012-06-07 2013-05-01 発光素子及び発光素子パッケージ Active JP6218426B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0060751 2012-06-07
KR1020120060751A KR20130137295A (ko) 2012-06-07 2012-06-07 발광 소자 및 발광 소자 패키지

Publications (3)

Publication Number Publication Date
JP2013254939A JP2013254939A (ja) 2013-12-19
JP2013254939A5 JP2013254939A5 (https=) 2016-06-16
JP6218426B2 true JP6218426B2 (ja) 2017-10-25

Family

ID=48537897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013096214A Active JP6218426B2 (ja) 2012-06-07 2013-05-01 発光素子及び発光素子パッケージ

Country Status (4)

Country Link
US (1) US9082929B2 (https=)
EP (1) EP2672530B1 (https=)
JP (1) JP6218426B2 (https=)
KR (1) KR20130137295A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102015907B1 (ko) * 2013-01-24 2019-08-29 삼성전자주식회사 반도체 발광소자
JP2015119108A (ja) * 2013-12-19 2015-06-25 パナソニックＩｐマネジメント株式会社 紫外線発光素子
CN103700739B (zh) * 2014-01-03 2016-11-16 合肥彩虹蓝光科技有限公司 一种避免大尺寸外延片裂片的外延生长方法
CN108916688B (zh) * 2017-04-24 2020-08-18 京东方科技集团股份有限公司 光源和照明装置
US11271141B2 (en) * 2018-11-26 2022-03-08 Osram Opto Semiconductors Gmbh Light-emitting device with wavelenght conversion layer having quantum dots
WO2023087314A1 (zh) * 2021-11-22 2023-05-25 厦门市三安光电科技有限公司 发光二极管及制备方法和显示面板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
JP3505357B2 (ja) * 1997-07-16 2004-03-08 株式会社東芝 窒化ガリウム系半導体素子およびその製造方法
KR100589621B1 (ko) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP2000228535A (ja) * 1999-02-08 2000-08-15 Nippon Telegr & Teleph Corp <Ntt> 半導体素子およびその製造方法
JP3626423B2 (ja) * 2000-05-22 2005-03-09 日本碍子株式会社 フォトニックデバイスの製造方法
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
KR100639026B1 (ko) * 2005-11-25 2006-10-25 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP2008288397A (ja) * 2007-05-17 2008-11-27 Eudyna Devices Inc 半導体発光装置
JP2009038377A (ja) * 2007-07-31 2009-02-19 Epivalley Co Ltd Ｉｉｉ族窒化物半導体発光素子
US8183557B2 (en) * 2007-09-19 2012-05-22 The Regents Of The University Of California (Al,In,Ga,B)N device structures on a patterned substrate
JP2010161354A (ja) * 2008-12-08 2010-07-22 Showa Denko Kk 半導体発光素子用テンプレート基板、半導体発光素子用テンプレート基板の製造方法、半導体発光素子の製造方法及び半導体発光素子
TWI399871B (zh) * 2009-02-03 2013-06-21 Huga Optotech Inc 光電元件及其形成方法
WO2011027418A1 (ja) * 2009-09-01 2011-03-10 株式会社 東芝 半導体発光素子及び半導体発光装置
EP2544250B1 (en) * 2010-03-01 2020-01-08 Sharp Kabushiki Kaisha Process for production of nitride semiconductor element, nitride semiconductor light-emitting element, and light-emitting device
CN102244168A (zh) * 2010-05-14 2011-11-16 展晶科技(深圳)有限公司 发光二极管及其制造方法
KR20120032329A (ko) * 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자

Also Published As

Publication number Publication date
EP2672530A2 (en) 2013-12-11
EP2672530A3 (en) 2015-12-23
EP2672530B1 (en) 2020-04-01
US9082929B2 (en) 2015-07-14
JP2013254939A (ja) 2013-12-19
US20130328056A1 (en) 2013-12-12
KR20130137295A (ko) 2013-12-17

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